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Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems. To prepare for future 3D X-point memory scaling, we studied the plasma-enhanced atomic layer deposition (PE-ALD) of Ge1−xSx amorphous chalcogenide alloy thin films, the selection of which was motivated by their high optical bandgap and wide amorphous forming regions. The PE-ALD Ge1−xSx thin films were synthesized using a GeCl4 precursor and H2S plasma reactant, and their self-limited growth characteristics were studied in detail as a function of the exposure time of the ALD steps, temperature, and plasma power. The PE-ALD GeS2 thin film showed an RMS roughness of 0.29 nm and good conformality in the vertical 3D structure. Moreover, the OTS behavior of GeS2 and Ge2S3 mushroom-type devices with a 50 nm bottom electrode contact (BEC) were investigated as well as the trade-off relationship between the threshold voltage (1.9–6.2 V) and the normalized off current (20–250 nA) based on scaling the film thickness down from 30 nm to 5 nm. In particular, the GeS2 device showed a higher threshold field (∼3.1 MV cm−1) and lower normalized off current characteristics than the Ge2S3 device due to the higher trap density (2.1 × 1021 cm−3), according to the modified Poole–Frenkel (PF) model. The results achieved by this PE-ALD research on this novel binary GeS2 amorphous chalcogenide for OTS applications will contribute to the development of future 3D cross-point memory scaling.

Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications beyond von Neumann computing. The pre...

Ge–Sb–Se–Te (GSST) quaternary films were prepared through atomic layer deposition (ALD) to ensure their amorphous stability for ovonic threshold switching (OTS) applications. Se, a typical phase-change material, was incorporated into Ge–Sb–Te (GST) films using Sb (OC2H5)3 and [(CH3)3Si]2Se precursors. The process produces highly conformal, uniform films consisting of stoichiometric binaries of GeTe2, Sb2Te3, and Sb2Se3. A detailed analysis of the atomic compositions revealed Te substitution for Se on the film surface through the ligand exchange reaction between the Te and Se precursors. Comparative experimental and simulation studies on the OTS behaviors showed that Ge and Se increase the optical bandgaps while Se decreases the density of the localized states. The amorphous stability of the Se-containing films enhances the cycling endurance of the OTS device up to 105 cycles. As conformality and atomic-level accuracy in terms of thickness and composition are prerequisites for three-dimensional crossbar-type passive arrays, the ALD process and the OTS performance presented in this work have a high potential utility for constructing a selector element in non-volatile high-density memories.

In this paper, a new atomic layer deposition (ALD) process for depositing binary GeTe and ternary Ge–Sb–Te thin films is reported, where HGeCl3 and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. The precursors reacted together to form the films at a low substrate temperature of 50–100 °C, without involving any additional reactive process gas. HCl elimination from the Ge precursor to form the divalent Ge intermediate, GeCl2, is proposed to explain the formation of 1:1 composition stoichiometric GeTe films. The GeTe films are promising for use in phase change memory applications. Ternary Ge–Sb–Te films were deposited by combining the GeTe ALD process with a previously developed ALD process for Sb2Te3 films, where Sb(OC2H5)3 and ((CH3)3Si)2Te were employed respectively as the Sb and Te precursors. However, the composition of the ternary GeSbTe films deviated slightly from the desired GeTe–Sb2Te3 pseudobinary composition suggesting that a certain unwanted reaction was involved between the prev...

The multilayered optical coating whose structure consists of optical cavity and multiple layers of ultrathin phase change material (PCM) film is presented. The color changing is enabled via transition between amorphous and crystalline phases of PCM, which is accompanied by high optical contrast. The phase transition of each PCM layer, separated by ultrathin oxide barrier, can be realized through various crystallization temperatures with respect to the different thickness of ultrathin (

The local bonding structures of GexTe1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH3)3)2)2 and ((CH3)3Si)2Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

The biomimetic characteristics of the memristor as an electronic synapse and neuron have inspired the advent of new information technology in the neuromorphic computing. The application of the memristors can be extended to the artificial nerves on condition of the presence of electronic receptors which can transfer the external stimuli to the internal nerve system. In this work, nociceptor behaviors are demonstrated from the Pt/HfO

To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems, oxide-based redox system comprises the major category of these intriguing electronic devices, where the local, along both lateral and vertical directions of thin films, changes in oxygen chemistry has been suggested to be the main RS mechanism. However, there are systems which involve distinctive crystallographic phases as CF; the Magnéli phase in TiO2 is one of the very well-known examples. The current research reports the possible presence of distinctive local conducting phase in atomic layer deposited SrTiO3 RS thin film. The conducting phase was identified through extensive transmission electron microscopy studies, which indicated that oxygen-deficient Sr2Ti6O13 or Sr1Ti11O20 phase was presumably present mainly along the grain boundaries of SrTiO3 after the unipolar set switching in Pt/TiN/SrTiO3/Pt structure. A detailed electrical characterization revealed that the samples showed typical bipolar and complementary RS after the memory cell was unipolar reset.

The ovonic threshold switch (OTS) based on the voltage snapback of amorphous chalcogenides possesses several desirable characteristics: bidirectional switching, a controllable threshold voltage (V th) and processability for three-dimensional stackable devices. Among the materials that can be used as OTS, GeSe has a strong glass-forming ability (∼350 °C crystallization temperature), with a simple binary composition. Described herein is a new method of depositing GeSe films through atomic layer deposition (ALD), using HGeCl3 and [(CH3)3Si]2Se as Ge and Se precursors, respectively. The stoichiometric GeSe thin films were formed through a ligand exchange reaction between the two precursor molecules, without the adoption of an additional reaction gas, at low substrate temperatures ranging from 70 °C-150 °C. The pseudo-saturation behavior required a long time of Ge precursor injection to achieve the saturation growth rate. This was due to the adverse influence of the physisorbed precursor and byproduct molecules on the efficient chemical adsorption reaction between the precursors and reaction sites. To overcome the slow saturation and excessive use of the Ge precursor, the discrete feeding method (DFM), where HGeCl3 is supplied multiple times consecutively with subdivided pulse times, was adopted. DFM led to the saturation of the GeSe growth rate at a much shorter total injection time of the Ge precursor, and improved the film density and oxidation resistance properties. The GeSe film grown via DFM exhibited a short OTS time of ∼40 ns, a ∼107 ON/OFF current ratio, and ∼104 selectivity. The OTS behavior was consistent with the modified Poole-Frenkel mechanism in the OFF state. In contrast, the similar GeSe film grown through the conventional ALD showed a low density and high vulnerability to oxidation, which prevented the OTS performance. The ALD method of GeSe films introduced here will contribute to the fabrication of a three-dimensionally integrated memory as a selector device for preventing sneak current.

A double-layer-stacked 1 diode-1 resistor (1D1R) cross-bar array (CBA) resistance switching random access memory is fabricated. The TiO2-based Schottky diode and the unipolar resistance switching TiO2 comprise the cell selector and nonvolatile memory components, respectively. All the fabrication processes are performed near room temperature through physical vapor deposition processes, and the performance degradation by the thermal budget is well suppressed. As a result, a rectification ratio as high as 1.4 × 109 is achieved from the appropriately cycled diode, which can last up to 108 cycles in the integrated structure. Such highly promising performance is confirmed from both the upper and lower memory layers, which confirm the possible route for the multistacked memory structure. The two-bit-per-cell operation allows an effective minimum cell area of F2, which is confirmed from the randomly accessed cells to be completely free from adverse interference through the adoption of an extremely-high-performance diode. The present 1D1R integration technique will eventually allow the fabrication of an extremely high-integration-density (above 1 Gb per block) CBA with the help of the two-port sensing scheme. Such a high-performance CBA device is a feasible contender for memory-dominant computation.

A facile route to mitigate the Fermi-level pinning between a p-type GaSb semiconductor and an Al2O3 dielectric is proposed. Combination of the sulphurization of the GaSb surface and the subsequent rapid thermal annealing allowed for high quality GaSb/Al2O3 interfacial characteristics; the interfacial trap density value was ≤2.0 × 1012 cm−2 eV−1 in an energy range of 0.05 ≤ ET − Ev ≤ 0.45 eV for the PMOS capacitor via rapid thermal annealing at 575 °C. A physical rationale was given on the basis of the thermo-chemical conversion of Ga2O into Ga2O3 and the conformal elimination of Sb related elements and oxides on the GaSb surface.