1. ICPECVD-Dielectric Thin-Films CMOS-Compatible: Trends in Eco-Friendly Deposition
- Author
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Jean-Yves Rauch, Etienne Herth, Centre de Nanosciences et de Nanotechnologies C2N, CNRS, Université Paris-Saclay (C2N), and Université Bourgogne Franche-Comté [COMUE] (UBFC)
- Subjects
Materials science ,02 engineering and technology ,Dielectric ,Chemical vapor deposition ,01 natural sciences ,7. Clean energy ,Industrial and Manufacturing Engineering ,[SPI]Engineering Sciences [physics] ,Management of Technology and Innovation ,0103 physical sciences ,Microelectronics ,General Materials Science ,Deposition (law) ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,Renewable Energy, Sustainability and the Environment ,business.industry ,Mechanical Engineering ,Dielectric thin films ,021001 nanoscience & nanotechnology ,Environmentally friendly ,CMOS ,Nanoelectronics ,Optoelectronics ,0210 nano-technology ,business - Abstract
Depositions of the dielectric thin-films at low temperatures without greenhouse gas, nitrous oxide (N $$_{2}$$ O) is one of the most critical challenges in modern technologies for microelectronics, optoelectronics, and nanoelectronics. The present study demonstrates that thin dielectric layers deposit by inductively-coupled plasma-enhanced chemical vapor deposition (ICPECVD) technology at lower temperatures ( $$< 300\,^{\circ }$$ C) can be successfully optimized and has the potential to reduce the environmental impact significantly. A particular focus is made on the improvement of the optical properties that are strongly correlated to the physicochemical bonds film properties. Typical deposition rates range from 10 to 20 nm/min, depending mainly on power, pressure, and gas flows. This study opens up large scale applications that require lower hydrogen content and a stable process. The presented results emphasize green manufacturing technologies and can be valuable for a wide range of applications using a complementary metal-oxide-semiconductor (CMOS)-compatible technology.
- Published
- 2021
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