1. Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures
- Author
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Wang Zhan-Guo, Lü Yuanjie, Lu Wu, Zhang Yu, Lin Zhao-Jun, Zhao Jianzhi, Timothy D. Corrigan, and Chen Hong
- Subjects
Photocurrent ,Materials science ,Condensed matter physics ,business.industry ,Schottky barrier ,General Physics and Astronomy ,Relative permittivity ,Heterojunction ,Biasing ,Algan gan ,Barrier layer ,Reverse bias ,Optoelectronics ,business - Abstract
Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schrodinger's and Poisson's equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to - 3 V, the value of the relative permittivity decreases from 7.184 to 7.093.
- Published
- 2009