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A structured catalyst for the dry reforming of methane (DRM) was investigated as a biogas pre-reformer for indirect internal reforming solid oxide fuel cell (IIR-SOFC). For this purpose, a NiCrAl open-cell foam was chosen as support and Ni-based samarium doped ceria (Ni-SmDC) as catalyst. Ni-SmDC powder is a highly performing catalyst showing a remarkable carbon resistance due to the presence of oxygen vacancies that promote coke gasification by CO2 activation. Ni-SmDC powder was deposited on the metallic support by wash-coating method. The metallic foam, the powder, and the structured catalyst were characterized by several techniques such as: N2 adsorption-desorption technique, X-ray diffraction (XRD), scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDX), focused ion beam (FIB), temperature programmed reduction (H2-TPR), and Raman spectroscopy. Catalytic tests were performed on structured catalysts to evaluate activity, selectivity, and stability at SOFC operating conditions.

Organic materials have been found to be promising candidates for low-temperature thermoelectric applications. In particular, poly (3-hexylthiophene) (P3HT) has been attracting great interest due to its desirable intrinsic properties, such as excellent solution processability, chemical and thermal stability, and high field-effect mobility. However, its poor electrical conductivity has limited its application as a thermoelectric material. It is therefore important to improve the electrical conductivity of P3HT layers. In this work, we studied how molecular weight (MW) influences the thermoelectric properties of P3HT films. The films were doped with lithium bis(trifluoromethane sulfonyl) imide salt (LiTFSI) and 4-tert butylpyridine (TBP). Various P3HT layers with different MWs ranging from 21 to 94 kDa were investigated. UV&ndash, Vis spectroscopy and atomic force microscopy (AFM) analysis were performed to investigate the morphology and structure features of thin films with different MWs. The electrical conductivity initially increased when the MW increased and then decreased at the highest MW, whereas the Seebeck coefficient had a trend of reducing as the MW grew. The maximum thermoelectric power factor (1.87 &mu, W/mK2) was obtained for MW of 77 kDa at 333 K. At this temperature, the electrical conductivity and Seebeck coefficient of this MW were 65.5 S/m and 169 &mu, V/K, respectively.

In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of m-Raman and x-ray photoelectron spectroscopies, and scanning tunneling microscopy and spectroscopy, we were able to individuate a carbon precursor phase to graphene nucleation which coexists with small graphene domains. This precursor phase is made of C aggregates with different size, shape and local ordering which are not fully sp(2) hybridized. In some atomic size regions these aggregates show a linear arrangement of atoms as well as the first signature of the hexagonal structure of graphene. The carbon precursor phase evolves in graphene domains through an ordering process, associated to a re-arrangement of the Ge surface morphology. This surface structuring represents the embryo stage of the hills-and-valleys faceting featured by the Ge(001) surface for longer deposition times, when the graphene domains coalesce to form a single layer graphene film. (C) 2018 Elsevier Ltd. All rights reserved.

Herein, we report an impedimetric DNA-based aptamer sensor for a single-step detection of B. anthracis spore simulant (B. cereus spore). Specifically, we designed a miniaturized label-free aptasensor for B. cereus spores based on a gold screen-printed electrode functionalized with B. cereus spores-binding aptamer (BAS-6R). Several parameters were optimized to fabricate the aptasensor such as the concentration of DNA aptamer solution (0.5 µM), the time (48 h), the temperature (4 °C), and the pH (7.5) for aptamer immobilization on the working electrode surface. Once the aptasensor was developed, it was tested against B. cereus spores 14579 evaluating the effect of incubation time and MgCl2 concentration. Under the optimized conditions (incubation time equal to 3 h and absence of MgCl2), B. cereus spores 14579 were detected with a linear range between 104 CFU/ml and 5 × 106 CFU/ml and a detection limit of 3 × 103 CFU/ml. Furthermore, the study of selectivity toward B. cereus 11778, B. subtilis, Legionella pneumophila, and Salmonella Typhimurium has demonstrated the capability of this sensor to detect B. cereus spores, proving the suitability of the DNA-based sensing element combined with a portable instrument for a label-free measurement on site of B. anthracis spore simulant.

Polymeric electrospun fibers are becoming popular in microbial biotechnology because of their exceptional physicochemical characteristics, biodegradability, surface-to-volume ratio, and compatibility with biological systems, which give them a great potential as microbial supports to be used in production processes or environmental applications. In this work, we analyzed and compared the ability of Escherichia coli, Pseudomonas putida, Brevundimonas diminuta, and Sphingobium fuliginis to develop biofilms on different types of polycaprolactone (PCL) microfibers. These bacterial species are relevant in the production of biobased chemicals, enzymes, and proteins for therapeutic use and bioremediation. The obtained results demonstrated that all selected species were able to attach efficiently to the PCL microfibers. Also, the ability of pure cultures of S. fuliginis (former Flavobacterium sp. ATCC 27551, a very relevant strain in the bioremediation of organophosphorus compounds) to form dense biofilms was observed for the first time, opening the possibility of new applications for this microorganism. This material showed to have a high microbial loading capacity, regardless of the mesh density and fiber diameter. A comparative analysis between PCL and polylactic acid (PLA) electrospun microfibers indicated that both surfaces have a similar bacterial loading capacity, but the former material showed higher resistance to microbial degradation than PLA., European Union’s H2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement no. 691095. The contracts of J.A.T.-R. and C.R. were supported by the grant nos. BU079U16 and BU092U16, that were co-financed by Junta de Castilla y León and the European Social Fund.

International audience; A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μm). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μm, above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 10 19 cm −3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

We report a method that allows a complete quantitative characterization of whole single cells, assessing the total amount of carbon, nitrogen, oxygen, sodium, and magnesium and providing submicrometer maps of element molar concentration, cell density, mass, and volume. This approach allows quantifying elements down to 10(6) atoms/mu m(3). This result was obtained by applying a multimodal fusion approach that combines synchrotron radiation microscopy techniques with off-line atomic force microscopy. The method proposed permits us to find the element concentration in addition to the mass fraction and provides a deeper and more complete knowledge of cell composition. We performed measurements on LoVo human colon cancer cells sensitive (LoVo-S) and resistant (LoVo-R) to doxorubicin. The comparison of LoVo-S and LoVo-R revealed different patterns in the maps of Mg concentration with higher values within the nucleus in LoVo-R and in the perinuclear region in LoVo-S cells. This feature was not so evident for the other elements, suggesting that Mg compartmentalization could be a significant trait of the drug-resistant cells.

Elemental analysis of biological sample can give information about content and distribution of elements essential for human life or trace elements whose absence is the cause of abnormal biological function or development. However, biological systems contain an ensemble of cells with heterogeneous chemistry and elemental content; therefore, accurate characterization of samples with high cellular heterogeneity may only be achieved by analyzing single cells. Powerful methods in molecular biology are abundant, among them X-Ray microscopy based on synchrotron light source has gaining increasing attention thanks to its extremely sensitivity. However, reproducibility and repeatability of these measurements is one of the major obstacles in achieving a statistical significance in single cells population analysis. In this study, we compared the elemental content of human colon adenocarcinoma cells obtained by three distinct accesses to synchrotron radiation light.

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces, such as number of layers and domain size, is of paramount importance. Here we investigate the role of the process gas flows on the CVD growth of graphene on Ge(100). The quality and morphology of the deposited material is assessed by using mu-Raman spectroscopy, X-ray photo emission spectroscopy, scanning electron microscopy, and atomic force microscopy. We find that by simply varying the carbon precursor flow different growth regimes yielding to graphene nanoribbons, graphene monolayer, and graphene multilayer are established. We identify the growth conditions yielding to a layer-by-layer growth regime and report on the achievement of homogeneous monolayer graphene with an average intensity ratio of 2D and G bands in the Raman map larger than 3.

The biological function of a chemical element in cells not only requires the determination of its intracellular quantity, but also the spatial distribution of its concentration. Different strategies can be employed to quantify and map the intracellular concentration of elements in single cells. The assessment of the intracellular elemental concentration, which is the relevant information, requires the measurement of cell volume. This challenging and demanding task requires combining different techniques allowing gathering of both morphological and compositional information on the same cell. Moreover, the need to analyse samples more similar to their natural state requires complex hardware equipment, and supplementary efforts in preparation protocols. Nevertheless, the response to the question: "where is it and how much?" is worth all these efforts. This review aims at providing an insight into the recent and most advanced techniques and strategies for quantifying and mapping chemical elements in single cells. We describe and discuss indirect detection techniques (label based) which make use of fluorescent dyes, and direct ones (label free), such as particle induced X-ray emission, proton backscattering spectrometry, scanning transmission ion spectrometry, nano-secondary ion mass spectrometry, X-ray fluorescence microscopy, complemented by X-ray imaging.

We report a novel experimental approach to derive quantitative concentration map of light elements in whole cells by combining two complementary nano-probe methods: X-ray fluorescence microscopy (XRFM) and atomic force microscopy (AFM). The concentration is derived by normalizing point-by-point the elemental (here Mg) spatial distribution obtained by XRFM, by the thickness measured using AFM. The considerable difference between the elemental distribution and the concentration maps indicates that this procedure is essential to obtain reliable information on the role and function of elements in whole cells. (C) 2011 Elsevier B.V. All rights reserved.

The technique for assembling a uniform oxide line by overlapping a series of nanosized oxide dots induced by atomic force microscopy is analytically and experimentally investigated. In addition to the normal continuous (static) pulses, the oxide growth rates under various discontinuous (modulated) pluses are studied to quantify the overlapping effect under multiple pulses used by the assembling technique. In the analysis of the assembling technique, the superposition principle is used to predict the assembled profiles and to define the uniformity criteria. Experiments have been performed to demonstrate the analytical prediction, including the threshold or minimum pitch for forming uniform lines, and the onset pitch for the overlapping effect to be considered. Indeed, by following the uniformity criteria developed, uniform and reliable oxide lines can be obtained by overlapping oxide dots.

Display Omitted Argon and oxygen plasma processes are used for controlled disruption of ferritin.XPS detection of Fe in ferritin film after plasma process was enhanced by ~10.XPS reveals the oxidation state of Fe in the ferritin core after the plasma etching. Ferritin is the main iron storage protein in living systems. Recent studies demonstrated that the chemical species present in the ferritin core and their chemical coordination can be different between physiological and pathological ferritin proteins. Therefore it is of paramount importance revealing the presence of metals other than iron and their oxidation state in the protein core.In this work we investigated and compared the use of argon and oxygen plasma processes for the erosion of the protein shell surrounding the mineral core, which is necessary for the chemical analysis of the ferritin core by surface sensitive technique such as X-ray photoelectron spectroscopy. We find that both the proposed etching processes are effective in the disruption of the protein shell and in the exposure of the Fe inside the core of the molecules. Neither oxygen nor argon plasma induced significant artifacts in the samples nor produce dramatic roughening in the surface allowing for a controlled thinning of the ferritin film. In the plasma treated samples X-ray photoelectron spectroscopy detected the Fe(III) oxidation state of metal present inside the ferritin cavity.

An easy method of incorporating TiO(2) nanoparticles into Nafion perfluorinated ionomer is proposed. Ultrathin films of Nafion were prepared by employing the Langmuir-Schaefer (LS) technique. The pressure-area isotherm study of a Langmuir monolayer of Nafion at the air-water interface on different concentrations of NaCl as the subphase allowed us to find the best experimental conditions for the deposition of stable Langmuir-Schaefer films. Incorporation of TiO(2) nanoparticles was performed by dipping Nafion LS films in a solution of TiO(2) nanoparticles. The uniformity of the TiO(2) incorporation was detected by UV-visible spectroscopy. The morphology of the Nafion, Nafion/TiO(2) nanoparticles thin films, and the changes due to the annealing procedure were investigated by atomic force microscopy. Interestingly, the AFM investigation showed that Nafion and Nafion/TiO(2) LS films have thermal stability up to 600 degrees C.

Langmuir–Schaefer (LS) films of poly(ortho-anisidine) (POAS) were fabricated by utilizing water and water acidified HCl as subphases, respectively. The uniformity of the films formation and the doping with Nafion were verified by UV–Vis spectroscopy. The morphology and the thickness of the POAS, HCl post-doping POAS and Nafion post-doping POAS LS films were investigated using atomic force microscopy. The electrochemical properties of POAS LS films, HCl post-doping POAS and Nafion post-doping POAS were investigated and compared with our previously published work. The electrochemical switching time of HCl post-doping POAS and Nafion post-doping POAS LS films were also estimated. Keywords: Poly(ortho-anisidine), Nafion, Langmuir–Schaefer, Conducting polymers, Electrochemistry

Magnesium (Mg) plays crucial structural and regulatory roles within cells. Despite the extensive amount of data about the biochemistry of Mg, a complete picture of its regulation and cellular homeostasis is lacking. Thanks to recent improvements in third generation synchrotron X-ray sources, X-ray fluorescence microscopy (XRFM) is becoming a highly sensitive method for mapping elemental distributions in cells. XRFM maps the element content but not the concentration, which is a relevant variable in a biological context. We tackled this issue by combining XRFM with atomic force microscopy that was used to obtain morphological information of the sample. The aim of the present study was to compare the content and the distribution of Mg in drug-resistant and -sensitive tumor cell lines. Our data has shown a massive increase of Mg in LoVo drug-resistant cells. Moreover, the map of intracellular Mg showed marked differences in the pattern distribution between sensitive and resistant cells.

Silicon grisms are very attractive devices as they allow for a spectroscopic mode able to effectively complement the natural imaging mode of IR cameras, providing high spectral resolution. In this paper we describe progress toward the realization of silicon grisms by means of chemical etching and electron-beam lithography.

We report on the realization of high-mobility two-dimensional electron gas based on modulation-doped Si/SiGe heterostructure grown directly on thin SiGe-On-Insulator (SGOI) substrate. The samples were grown by using low-pressure chemical vapor deposition. A pregrowth procedure for the cleaning of the SGOI surface that preserves the integrity and the composition of the substrate was developed. An electron mobility as high as 10(5)cm(2)V(-1) s(-1) at T = 0.4 K and 2000 cm(2)V(-1) s(-1) at T = 300 K was obtained. (C) 2007 Elsevier B.V. All rights reserved.

The properties of InGaAsN V-groove QWRs are assessed here by polarization-dependent photoluminescence (PL) and micro-magneto-PL. Both the polarization anisotropy of the QWR emission and the strong dependence of the diamagnetic shift on the orientation of the applied magnetic field confirm the 1D nature of the QWR excitons. Further, the possibility of passivating N impurities by H irradiation is used to estimate the N content (x) in the QWRs by turning off the effects of N incorporation. Both the H-induced blueshift of the QWR emission (70 meV) and the measured value of the electron effective mass are consistent with x similar to 1%. Nitrogen is also found to enhance the In intake in the QWR, likely due to the strain reduction resulting from the smaller lattice parameter of the InGaAsN alloy. Such strain reduction is also responsible for the quick decay of the degree of linear polarization (rho) of the QWR emission with increasing temperature, indicating a small splitting between the QWR valence-band levels. In fully hydrogenated samples, conversely, rho remains roughly constant up to similar to 240 K, suggesting the recovery of a larger energy separation between the QWR hole states upon N passivation. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

We investigated the effects of hydrogen irradiation on the degree of linear polarization, rho, of the light emitted by site-controlled, dilute-nitride InGaAsN V-groove quantum wires (QWRs). While in the as-grown sample the polarization of the QWR emission is highly sensitive to the increasing temperature (T), after sample hydrogenation the value of rho remains nearly unchanged (and similar to 25%) for T

""We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF(6) was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates. (C) 2010 Elsevier B.V. All rights reserved.""

The beam of planar THz Schottky detectors is strongly concentrated in the dielectric half-space. With the goal of illuminating arrays from the free-space side, we started to investigate substrate removal from both GaAs and Ge-on-Si diode wafers. © 2011 IEEE.

Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. © 2010 IEEE.

Atomic force microscopy (AFM) is well known for its ability for nanopatterning many different materials. The patterning technique using an AFM tip as a scratch tool, known as scratch nanolithography, is used to study the scratch characteristics of 80% Permalloy thin film and silicon, with the emphasis on establishing their scratchability or the nanoscale machinability. The effects of the scratch parameters, including the applied tip force, scratch speed, and number of scratches, on the size of the scratched geometry were specifically evaluated. The primary factors that measure the scratchability were then identified and the governing material properties for scratchability were evaluated. To demonstrate its versatility, the scratching technique was applied to fabricate a NiFe-based nanoconstriction, which is used for many ferromagnetic devices. All results indicated that NiFe thin film has much better scratchability than that of Si and the scratched groove geometry can be accurately correlated with and precisely controlled by the tip normal force.

Poly[3-3′(vinylcarbazole)] (PVK) was synthetized with N-vinylcarbazole as monomer by oxidative polymerization with ferric chloride. The resulting polymer was then deposited on various solid supports by using Langmuir–Schaefer (LS) method. The pressure–area isotherm of PVK revealed the possibility of compact monolayer formation at air–water interface. Different layers of PVK were doped with iodine vapours. Both scanning probe microscopy and optical microscopy images indicated a good uniformity of the films. The morphology and the thickness of PVK films were investigated using atomic force microscopy. The voltammetric investigation of I2 doped PVK showed a distinctive electrochemical behaviour. The photoinduced charge transfer across a donor/acceptor (D/A) hybrid interface provided an effective method to study the photoelectrochemical properties of the composite LS films.

Two approaches for sub-100 nm patterning are applied to Si/SiGe samples. The first one combines electron beam lithography (EBL) and anisotropic wet etching to fabricate wires with triangular section whose top width is narrower than the beam size. Widths as small as 20 nm on silicon and 60 nm on Si/SiGe heterostructures are obtained. The second lithographic approach is based on the local anodization of an aluminum film induced by an atomic force scanning probe. Using atomic force microscopy (AFM) anodization and selective wet etching, aluminum and aluminum oxide nanostructures are obtained and used as masks for reactive ion etching (RIE). Sub-100 nm wide wires are fabricated on Si/SiGe substrates.

The Langmuir monolayer behaviour of Nafion (perfluorinated ionomer) films at the air/water interface for different aqueous subphases was investigated. The pressure–area isotherms and the Brewster angle microscopic study of Langmuir monolayer of Nafion in different electrolytic media allowed us to find the best experimental conditions for the deposition of stable Langmuir–Schaefer (LS) films. The results obtained for Nafion LS films through a combination of physical measurements (UV–vis spectroscopy, atomic force microscopy and nano-gravimetry) indicated a stepwise and uniform growth of films on the substrate. The electrochemical and photoelectrochemical properties of dyes incorporated within Nafion LS films were investigated. This paper reports the first experimental results showing the possibility of obtaining and depositing Nafion LS films.

In this letter, we report on the optical properties of multistacked Ge quantum dots grown on Si(001). We demonstrate that the two emission bands observed in the photoluminescence spectra are related to the presence of strained and relaxed islands. Within both types of islands, the experimental findings support the hypothesis of the presence of quantum confining regions whose dimensions are governed by the strain relaxation process.

We report the fabrication process of a silicon target with a rectangular slit as an instrument for measuring the size and the angular divergence of high charge-density electron beams in particles accelerators. Bulk micromachining of silicon wafers by means of anisotropic etching allowed the definition of slits with parallel straight edges and low disuniformity. The disuniformities of the completed device evaluated by scanning electron microscopy were found to be tolerable with respect to the wavelength used in the experiments. Tests of the fabricated targets are in progress in the injector of ELETTRA, the synchrotron radiation facility in Trieste, Italy.

In this paper we present a simple and robust method to realize highly ordered arrays of stretched and suspended DNA molecules over the millimeter length scale. To this end we used an ad hoc designed superhydrophobic surface made of high aspect-ratio silicon pillars, where we deposited a droplet containing genomic DNA. A precise positioning of DNA strands was achieved by shaping the silicon pillars so that sharpened features resembling tips were included. Such features allowed us to accurately control the droplet de-wetting dynamics, pinning DNA strands in a well-defined position above pillars. The proposed technique has the potential to positively impact on the development of novel DNA chips for genetic analysis.

We present the first results of a fabrication process aimed to produce IR grisms with high refractive index. Such devices are intended to implement a high resolution (R>5000) made in the Near IR Camera-Spectrograph (NICS), a user instrument at the focal plane of the Italian national telescope Galileo. Lithe masking and anisotropic etching techniques have been employed to get, firstly, silicon gratings of suitable size for astronomical use, then warm bonding techniques will be used to obtain the final grisms in echelle configuration. The results of the laboratory tests on the first prototype are presented.

Scanning probe assisted nanolithography is a very attractive technique in terms of low-cost, patterning resolution and positioning accuracy. Our approach makes use of a commercial atomic force microscope and silicon probes to build simple nanostructures, such as metal electrode pairs, for application in novel quantum devices.Sub-100 nm patterning was successfully performed using three different techniques: direct material removal, scanning probe assisted mask patterning and local oxidation.

We present here a new methodology for quantitative mapping of light elements in cells, based on combination of compositional and morphological information, derived respectively by X-ray Fluorescence Microscopy (XRFM), Atomic Force Microscopy and Scanning Transmission X-ray Microscopy (STXM). Since XRFM of light elements (carbon, nitrogen, oxygen, sodium and magnesium), are strongly influenced by self-absorption, we developed an algorithm to correct for this effect, using the morphological and structural information provided by AFM and STXM. Finally, the corrected distributions have been obtained, thus allowing quantitative mapping.

Atomic force microscopy (AFM) has been widely used for creating nanoscale oxide lines on various material surfaces. The assembling technique used for overlapping an array of these oxide lines into a uniform oxide layer is analytically investigated and experimentally verified. The experimental data of the oxide lines induced at different scanning speeds are analytically correlated to provide the basic formula for the assembling technique. The superposition principle is then applied for simulating the assembling process to extract the criteria for assembling a uniform layer. Experiments have been conducted to verify the reliability of the uniformity criteria analytically obtained and the feasibility of the assembling technique developed. Indeed, a uniform oxide layer can be precisely assembled by following the uniformity criteria developed.

In this paper we present a comparative study of the agglomeration process in silicon-on-insulator (SOI), silicon germanium-om-insulator (SGOI), and strained SOI (SSOI) thin layers under thermal annealing in ultrahigh vacuum. In particular, we provide the first evidence and characterization of agglomeration in SGOI and SSOI substrates. A common agglomeration dynamics is observed in all the substrates investigated, with the semiconductor-on-insulator layer thickness being the main parameter governing it. These findings provide a better understanding of the surface-energy-driven dewetting phenomenon in semiconductor layers and allow us to single out the influence of the surface and stress energies on the void formation and evolution, as well as on the size and density of the agglomerated islands. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3117837]

In this paper we present the observation of ballistic transport in strained silicon cavities defined by etching on a silicon germanium heterostructure, demonstrated by magnetic focusing of conductance of the cavity at T = 50 mK. Numerical simulations, based on a novel approach which allows to include an arbitrary degree of decoherence in mesoscopic transport, show that magnetoconductance features can be related to the semiclassical orbits by means of the local density of states in the cavity. ©2004 IEEE.

We have investigated the local oxidation of an aluminum film to fabricate aluminum and aluminum oxide masks on Si and SiGe substrates. The local oxidation is made by negatively biasing the probe of an atomic force microscope operating in contact mode. The masks are defined by removing the unwanted material using highly selective etching solutions at room temperature. The produced aluminum-based masks can withstand reactive ion etching processes using fluorinated gases mixtures. We report examples of sub-100 nm pattern transfer on the substrate using the AFM fabricated masks. Preliminary observations suggest to use the sputtered aluminum films for which the anodization is found more efficient than for e-beam evaporated aluminum.