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28 results on '"Speck, James S."'

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1. Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

2. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy.

3. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy.

4. True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy.

5. Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition.

6. N-polar GaN/AlGaN/GaN high electron mobility transistors.

7. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy.

8. β-(AlxGa1-x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy.

9. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN.

10. Antiphase boundaries and rotation domains in In2O3(001) films grown on yttria-stabilized zirconia (001).

11. N-polar GaN epitaxy and high electron mobility transistors.

12. Effect of indium on the physical vapor transport growth of AlN

13. MBE-Grown AIGaN/GaN HEMTs on SiC.

14. In vacancies in InN grown by plasma-assisted molecular beam epitaxy.

15. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth.

16. Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant.

17. Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz.

18. Improved quality [formula]-plane GaN with sidewall lateral epitaxial overgrowth.

19. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy.

20. High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution.

21. Stability of materials in supercritical ammonia solutions.

22. Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h.

23. Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy

24. Growth study and impurity characterization of Al x In1−x N grown by metal organic chemical vapor deposition

25. Status and perspectives of the ammonothermal growth of GaN substrates

26. Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates

27. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes

28. Growth of gallium nitride via fluid transport in supercritical ammonia

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