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We report on the fabrication of p-Si/n-CdO and p-Si/n-CdIn2O4 junction diodes using chemically prepared pure CdO and In 5–20 wt.%-doped CdO nanoparticles. The cadmium oxide (CdO) and indium-doped cadmium oxide (ICO) nanoparticles were characterized using x-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy, energy dispersive analysis, high-resolution transmission electron microscopy (HRTEM), UV-Vis analysis, photoluminescence (PL) and electrical conductivity measurements. The strongest orientation along the (111) plane for CdO indicates a fcc crystal system. The average particle size of ICO nanoparticles vary from 26 nm to 41 nm. The FTIR bands for ICO samples at 508–511 cm−1 was strongly remodeled while increasing the doping concentration of In at 15 wt.%. HRTEM revealed a clear spherical morphology ~16.28 nm of average particle size for the ICO with 20 wt.% In. Moreover, a maximum electrical conductivity of 15.084 × 10−10 S cm−1 with higher transmittance range of about 76.11% was achieved. The photosensitivity of the p-Si/n-CdIn2O4 diode varied from 103 to 104 %. Also, high quantum efficiency ~225.92% and specific detectivity 5.1952×1011 Jones were found for p-Si/n-CdIn2O4 photodiode. These outcomes suggest that the developed p-Si/n-CdIn2O4 diode is suitable one in the fabrication of UV photodetector and solar cell devices for electronic communication. [ABSTRACT FROM AUTHOR]

Pure CeO2 and Ni-doped cerium oxide (NDC) films were deposited by a facile and economic jet nebulizer spray pyrolysis (JNSP) process at 450 ºC substrate temperature. Here, efforts have been done to enhance the performance of the NDC diode using various doping concentrations of Ni (0, 2, 4, and 6 wt%). X-ray diffraction revealed polycrystalline film formation with a cubic crystal structure and the crystallite size of CeO2 was increased from 10 to 21 nm on Ni doping. EDX study confirms the presence of Ni in NDC films. FESEM explicitly shows fine spherical grains-like morphology. The optical studies indicate the reduction in the bandgap of CeO2 from 3.30 to 2.86 eV on Ni doping. The Photoluminescence (PL) spectrum proves that the oxygen vacancy is created in the CeO2 thin films while doping with Ni which leads to the blue shift and intensity enhancement of emission peak. NDC film prepared with 6 wt% showed a higher electrical conductivity ~ 3.76 × 10–10 S/cm which indicates that it is suitable for photodiode fabrication. The fabricated p-Si/n-NDC photodiode works with superior parameters like ideality factor (n) and barrier height (ΦB) under dark and illuminated conditions. The saturation current (Io) of the p-Si/n-NDC diode is varied from ~ 2.69 × 10–05 to 6.57 × 10–04 A with Ni concentrations. The estimated n and ΦB values of the p-Si/n-NDC junction diode are found to be decreased from 7.6 to 2.5 and 0.72 to 0.60 eV. These outcomes indicate that the fabricated photodiode is a useful element in optoelectronic devices. [ABSTRACT FROM AUTHOR]

In this work, we present the synthesis and characterization of molybdenum oxide (MoO3) nanoparticles (NPs). The MoO3 NPs were coated on silicon (Si) wafer to fabricate n-MoO3/p-Si diode by the spin coating method. X-ray diffraction (XRD) profiles clearly show the crystalline nature of all specimens with an orthorhombic crystal system. Stretching and bending vibrations of molybdenum-oxygen were confirmed by the Fourier transform infrared analysis. The maximum absorbance was observed for MoO3 NPs prepared from Nitric acid (HNO3). Nano flakes like morphology were seen by scanning electron microscopy (SEM), and elemental dispersion spectral analysis approved expected Mo and O elements in the final product. Transmission electron microscopy (TEM) analysis of the as-prepared samples indicates a single-phase orthorhombic crystal structure. Electrical conductivity results show that synthesized samples are having semiconducting behavior. It is noted that the p–n junction diode prepared with Hydrochloric acid (HCl) has better rectifying behavior with lower ideal factor (n) values of 2.47 than the other sample. [ABSTRACT FROM AUTHOR]

In the proposed work, the thin films have been effectively synthesized by doping the post-transition metal with rare earth metal (In-Yb2O3) on a large scale using a low-cost jet nebulizer spray pyrolysis technique at different indium (In) doping concentration (0, 1.5, 2.5, 3.5, and 4.5 wt %) with optimized substrate temperature 550 °C. The structural, morphological and opto-electrical properties are investigated using various characterization techniques. Here, the high-quality single-phase cubic structure film was observed by X-ray diffraction (XRD) analysis. The field emission scanning electron microscope (FESEM) image reveals the change in morphology with indium (In) concentration in Yb2O3 thin films. The elemental composition study approves the presence of Yb, In and O. The transmittance, optical indirect energy gap of In-Yb2O3 films have been analyzed by UV–Vis spectra. DC electrical analysis records an improved conductivity and reduced average activation energy for higher doping content of In-Yb2O3 thin films. Notably, all the diodes shows positive photo conducting properties. Specifically, when the Al/In-Yb2O3/p-Si Schottky barrier diode fabricated with higher doping concentration such as 4.5 wt. % produces the minimum ideality factor (1.791), maximum barrier height (0.692 eV) and higher photosensitive diodes. [ABSTRACT FROM AUTHOR]

In this work, we report a p-Si/n-CeO2 junction diode fabricated by a cost-effective and large-area deposition technique of jet nebulizer spray pyrolysis. The n-CeO2 layer was coated on four different substrate temperatures (Tsub) 350, 400, 450, 500 °C and their properties were studied by various techniques like XRD, FE-SEM with EDX, UV–Vis and I–V characterization. XRD pattern confirmed a cubic fluorite crystalline phase of CeO2 thin films with preferential growth along (2 0 0) direction. A smooth surface with inter-connected smaller grains was recorded by FE-SEM micrographs and also the existing elements Ce and O have been confirmed. For Tsub of 450 °C, an exceptional optical absorption with smaller band energy of 3.3 eV was recorded in the UV–Vis spectrum. The electrical conductivity results indicated that all the films are semiconducting in nature. I–V characteristics of all the fabricated diode showed better rectification in dark with excellent photovoltaic characteristics under light exposed condition. The photosensitvity of the diode varied from 21.94 to 1093.75% with substrate temperature. Our results strongly suggested that rare-earth based p-Si/n-CeO2 diodes are suitable for future applications in ultraviolet photo-detector and photo-diode. [ABSTRACT FROM AUTHOR]

Octahedral indium oxide thin films with different precursor concentrations of 0.05, 0.075, 0.1 and 0.125 M were coated on glass substrates at 450 °C using jet nebulizer spray pyrolysis technique. Surface morphology of the prepared samples showed closely packed octahedrons for all concentrations. The measured root-mean-square value of the films was varied between 40.45 and 188.98 nm with increased precursor concentrations. From optical analysis, the calculated optical band gap was continuously decreased with increase in precursor concentrations. A slight blue shift was recorded through the PL spectrum while increasing the precursor concentration due to the oxygen vacancies. The nature of electrical conductivity of the In2O3 films was analysed. Interestingly, we have calculated two types of activation energies in the In2O3 films one is corresponding to low temperature and another is higher temperature. Further, p-Si/n-In2O3 junction diodes are fabricated with different precursor concentrations. Particularly, the 0.075 M of p-Si/n-In2O3 junction diode recorded a minimum ideality factor of n = 2.64 under light exposed condition, confirming the photo-conducting nature of the diodes in visible wavelength range. [ABSTRACT FROM AUTHOR]

The influence of nickel (Ni) doping concentrations on structural, optical, electrical and diode properties of molybdenum trioxide (MoO3) thin films has been studied systematically. Ni-doped MoO3 films and diodes were prepared for various doping concentrations of Ni such as 0, 3, 6 and 9 wt.% by jet nebulizer spray (JNS) pyrolysis technique. The structural properties of Ni-doped MoO3 films were analyzed by X-ray diffraction (XRD) pattern and scanning electron microscopy (SEM). The prepared films were exhibited in the orthorhombic crystal structure and sub-microsized plate-like surface morphology. The energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the presence of Ni, Mo and O elements in the prepared films. Ultraviolet–visible (UV–vis) analysis results showed that the absorbance decreases with the increasing of Ni doping concentration and the minimum band gap energy (Eg = 2.25) was obtained for 9 wt.% Ni-doped MoO3 film. From current–voltage (I–V) characterization, the conductivity is increased by increasing the Ni doping concentration in MoO3 thin films. The diode measurements were performed in darkness and under light illumination of a halogen lamp. The methods of I–V, Cheung's and Norde were used to calculate the diode parameters of ideality factor (n), barrier height (Φb) and sheet resistance (Rs). Also, the light ON/OFF switching response of the fabricated n-NiMoO3/p-Si diodes was analyzed. [ABSTRACT FROM AUTHOR]

Abstract Here, we fabricated highly sensitive metal-insulator-semiconductor (MIS) type diodes with positive photo-response by introducing a polycrystalline Ce-WO 3 composite thin films as an interfacial layer (IL) between the metal (Cu) and semiconductor (p-Si). Ce-WO 3 films were successfully grown on a quartz substrate through JNSP technique with 0, 4, 8 and 12 wt% of Ce on an optimized substrate temperature of 400 °C. Polycrystalline Ce-WO 3 films with mono-phase of monoclinic crystal structure were observed in XRD analysis, in which the mean crystallite size of the films were found to dwindle and their corresponding lattice parameters improved with Ce concentration. Randomly arranged rectangular shaped nanoplate-like surface morphology was observed through FESEM. From AFM study, the observed surface roughness of the films was found to be varying between 183 and 116 nm. Incorporation of Ce atoms in WO 3 matrix facilitated better optical absorption and minimized E g values which was studied using UV–vis spectrum. Current-voltage (I-V) characteristics exhibit highest σ dc with low ρ and E a values for higher concentration of Ce. For Cu/Ce-WO 3 /p-Si type diodes, as the light intensity of the diodes increased from 0 to 130 mW/cm2 their corresponding ideality factor (n) was found to decrease. Moreover, significant photodiode parameters like P S , R, QE (%) and D* enhanced with Ce and in particular the MIS diode fabricated with its 12 wt% showed better results in which a remarkable responsivity of 20.61 mA/W was recorded. Graphical abstract Unlabelled Image Highlights • Ultra-fast photoresponse and high sensitive based MIS type diodes have been fabricated by a simple JNSP technique. • The nanoplate-like surface morphology was observed through FESEM analysis. • The MIS diode fabricated with 12 wt% showed high responsivity of 20.61 mA/W. • High photosensitivity of P S = 17,509.62% and a maximum quantum efficiency of QE = 9.72% were obtained at 130 mW/cm2. • The fabricated Cu/Ce-WO 3 /p-Si type diode will be ideal for UV photodetector application. [ABSTRACT FROM AUTHOR]

[Display omitted] • For the first time, facile spin coating technique is employed to fabricate Ga doped novel WO 3 films and n-Ga@WO 3 /p-Si heterojunction diode by keeping their optoelectronic applications point of view. • X-ray diffraction study reveals the orthorhombic structure of WO 3 at all Ga contents and also Ga presence was approved. • EDX study confirm the presence of Ga in WO 3 films. • SEM study shows that the morphology of WO 3 is remarkably transformed from nanoplates to fine nano-leaves with some agglomeration when Ga is doped. • Enhancement in electrical conductivity was observed with temperature as well as with Ga doping content. • Robust electrical properties of the devices were studied. • Outcomes indicates that the developed thin films and heterojunction device is quite impressive for optoelectronic applications. Hence author hope that it will a great addition to the literature for scientists and optoelectronic industries. In this work, we have fabricated the gallium doped tungsten trioxide (Ga@WO 3) films and n-Ga@WO 3 /p-Si diodes by taking various concentrations (0, 3, 6, 9, and 12 wt%) of Ga through the spin-coating method. To analyze the impact of Ga-dopant on the physical properties of WO 3 films, XRD, SEM, and robust dc electrical analyses have been used. From the XRD analysis, compared to the lower concentration of Ga dopant, the higher dopant concentrations show the presence of Ga on the o-GaWO 3 crystal structure. The nanoplates-like surface morphology was detected by SEM analysis. The temperature-dependent dc conductivity was studied by I-V characterization, and 12 wt% of Ga doped WO 3 thin film exhibits a higher conductivity value and low activation energy (E a) at room temperature. The J-V nature signifies that n-WO 3 /p-Si diode performance was enhanced using Ga dopant concentration. The diode constraints ideality factor (n) and barrier height (Φ B) values were determined from J-V, Cheung's, and Norde's functions. From J-V-T & Richardson plot (ln (J 0 /T2)), we obtain that the Φ B values were decreased with decreasing temperature. This is explained through the mechanism of thermionic emission with Φ B Gaussian distribution. The determined parameters of the fabricated films and junction diode signify that these can be employed in the applications of photodetectors and solar cells. [ABSTRACT FROM AUTHOR]

• Undoped and Sn doped Co 3 O 4 thin films were prepared by JNSP method. • Spherical-like grains are observed from the FE-SEM images. • The optical band gap of Co 3 O 4 film is noticed to be increased after adding Sn ions. • We have fabricated an undoped and Sn doped p-Co 3 O 4 /n-Si junction diode for various concentrations. • We observed that the p-Sn@Co 3 O 4 /n-Si diodes are highly sensitive and appropriate for photodetection applications. [Display omitted] In this work, we have prepared Co 3 O 4 thin films for different doping level including 0, 2, 4, and 6 wt% by JNSP method and analyzed their structural, morphological, optical, and electrical properties by XRD, FE-SEM, EDX, UV-Vis, and current-voltage (I-V) characteristics. The XRD profiles confirm the cubic crystal structures of Sn doped Co 3 O 4 films. Spherical-like grains are observed from the FE-SEM images and were suppressed due to Sn doping. Also, the elements like Sn, Co, and O were confirmed by EDX analysis. The optical band gap of Co 3 O 4 film is noticed to be increased after adding Sn ions, which has been studied through UV-Vis spectroscopy. Most importantly, we have fabricated an undoped and Sn doped p-Co 3 O 4 /n-Si junction diode for various concentrations. The determined ideality factor of the p-Sn doped Co 3 O 4 /n-Si diodes were reduced for both under dark and light conditions. In addition, the calculated responsivity, quantum efficiency, and specific detectivity of the diodes were enhanced with forwarded voltage. The p-Sn@Co 3 O 4 /n-Si diode fabricated with 2 wt% was achieved maximum responsivity and quantum efficiency of R = 247.03 mA/W, QE = 95.7%, and D* = 2.84 × 1010 at 3 V. We observed that the p-Sn doped Co 3 O 4 /n-Si diodes are highly sensitive and appropriate for photo-detection applications. [ABSTRACT FROM AUTHOR]

Novel nanostructure formations like core-shell influence the sensing nature of the optoelectronic devices. In this report, transition metal oxides (TMOs) and transition metal dichalcogens (TMDCs) based sensing layer fabrication and their influence in photo sensing performances were analysed. The metastable h-MoO 3 , thermally stable α-MoO 3 , as synthesized MoS 2 and combinational MoO 3 @MoS 2 core@shell nanocomposites are synthesized by co-precipitation method. Phase purity of synthesized particles was analysed with XRD. Vibration modes of the samples were confirmed with Raman spectroscopy. The morphology behaviours of MoO 3 in different polymorphs due to annealing temperature namely prismatic like h-MoO 3 , layered rod like α-MoO 3 and sphere like MoS 2 decorated core@shell MoO 3 @MoS 2 were observed in the FE-SEM micrographs. The core@shell rod like structured was recorded with HRTEM. Further construction of photodiodes such as n-(h-MoO 3)/p-Si, n-(α-MoO 3)/p-Si, n-MoS 2 /p-Si and n-MoO 3 @MoS 2 /p-Si by employing solution processed method with pre-synthesized particles were discussed in detail. The current-voltage (I–V) characteristics and photo sensing parameters of detector are compared. From the experimental result, n-MoO 3 @MoS 2 /p-Si has better photosensitivity (P S) of 21678.6 (%) and the specific detectivity (D*) of 5.813 × 1010 Jones. [Display omitted] • Novel n-MoO 3 @MoS 2 /p-Si heterostructure diode has been facilely developed. • Structural and vibrational studied confirm the fabrication of n-MoO 3 @MoS 2 system. • MoS 2 decorated core@shell MoO 3 @MoS 2 was observed in the FE-SEM micrographs and core@shell rod like structured were recorded with HRTEM. • The development of photodiodes such as n-(h-MoO 3)/p-Si, n-(α-MoO 3)/p-Si,n-MoS 2 /p-Si and n-MoO 3 @MoS 2 /p-Si has been done. • n-MoO 3 @MoS 2 /p-Si shows (P S) of 18659 (%) and the (D*) of 5.813 × 1010 Jones. [ABSTRACT FROM AUTHOR]

In this work, boron doped graphene nanoparticles (NPs) were synthesized by the hydrothermal route with different boron tribromide concentrations such as 52, 104, and 156 μL. The structural, morphological and optical properties of the prepared NPs were studied using different characterization techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), atomic force microscopy (AFM), UV–vis spectroscopy and photoluminescence spectroscopy (PL). The XRD pattern reveals the hexagonal crystal structure. The SEM image showed textured sheet-like layers which got agglomerated to form fluffy structures. The TEM images recorded single-crystalline nature and also confirms the particle size was reduced upon increasing boron tribromide solution concentration with recognizable particle shape. The topographic properties of the synthesized B-doped graphene NPs were also studied through AFM images. The UV visible absorbance characteristics peaks 243 and 372 nm were observed correspond to π – π* in C–C bands and n- π* transition. After that as grown NPs were used to fabricate diode junctions on p-Si substrates (p-Si/n-B-doped graphene). The electrical performance of each p-Si/n-B-doped graphene diodes junction was examined using I–V characteristics and electrical parameters of diode junction such as ideality factor, barrier height and reverse saturation current were found 2.9–4.3, 0.75–0.83 eV and 4.88 × 10−6-7.26 × 10−6 A. The calculated ideality factor values of the p-Si/n-B-doped graphene diodes are decreased with increase in boron tribromide solution concentration. [Display omitted] • Boron doped graphene nanoparticles were synthesized by the hydrothermal route for various concentrations of Boron tribromide. • XRD pattern exhibited a hexagonal crystal structure with sharp crystalline peak at (002) orientation. • A sheet-like surface morphology was observed through SEM image. • TEM images confirm the particle size was reduced upon increasing boron tribromide. • A minimum ideality factor of n = 2.9 was obtained for p-Si/n-B-doped Graphene diode fabricated with 156 μL. [ABSTRACT FROM AUTHOR]

In this work, fine nickel oxide nanoparticles (NiO NPs) were successfully made utilizing a straightforward co-precipitation approach at low temperature. The effects of precursor concentration on the structural, optical, and electrical characteristics of NiO nanoparticles were investigated. All indexed diffraction peaks in XRD demonstrate the production of NiO with cubic structure. An increase in NiO crystallite size above 16.8 nm was observed when the precursor concentration exceeds 2 M, suggesting the presence of nanostructure in the final product. In FT-Raman spectra, the band centered at ∼ 500 cm–1 is due to Ni-O stretching (LO) mode, and two-magnon (2 M) scattering mode causes the band at 1514 cm–1. The synthesized product is composed of almost rod-shaped particles with a size range of 10–20 nm, according to FESEM pictures. The UV absorption studies showed a high absorption at the fundamental absorption edges originating at 332 nm, which gradually shifted to a lower energy region up to 400 nm with increasing precursor concentration, which means a reduction in bandgap values. The effect of precursor concentration associated with the electrical characteristics of the produced NiO nanoparticles has been investigated for the temperature range 30 to 130 °C. The I-V characterization was used to compute the different photo-diode parameters including n, Ф B , I o , P S , R, QE, and D*. The remarkable high photosensitivity of 1100% and specific detectivity of 4.324 × 10−10 Jones for the diode evaluated at 120 mW/cm2 was observed in a 2 M fabricated diode. These findings imply that all the fabricated diodes are exceptionally light-sensitive and are well-suited for upcoming UV photodetector applications. [Display omitted] • Development of NiO nanostructures-based photodiode with remarkable photosensitivity is reported • The XRD and Raman analyses confirm the synthesis of cubic NiO system • Crystallite size was improved from 10 to 17 nm with an increase in molar concentrations • Rising concentrations cause a steady decrease in the band gap energy from 3.45 to 3.1 eV. • A remarkably high photosensitivity of 1100% was observed for the device developed with 2 M concentration. [ABSTRACT FROM AUTHOR]

• Novel high-performance p-CuO@CuS/n-Si photodetectors have been facilely fabricated. • Structural and vibrational studied confirm the synthesis of fabrication of CuO@CuS nanocomposite system. • Core-shell structure like morphology was approved by FESEM & HRTEM analyses. • High P s of ∼ 7.76 104 % & R ∼ 798.61mA/W was observed for the fabricated photodetector. • High detectivity (D*) of 8.19 ×1011 J & of ∼ 309.66%, was observed for the fabricated photodetector. Development of photo detectors based on different semiconducting materials with high performance has been in progress in recent past, however, there is a lot of difficulties in developing the more effective photo detectors-based devices with high responsivity, detectivity and quantum efficiency. Hence, we have synthesized pure CuS and CuO@CuS core-shell heterostructure based photo detectors with high performance by simple and cost-effective two-step chemical co-precipitation method. The phase purity of CuS and CuO@CuS composite was observed by XRD analysis and the result were verified with Raman spectroscopy studies. Sphere like morphology of pure CuS and core-shell structure formation of CuO@CuS are observed with scanning and transmission electron microscopes. The presence of expected elements has been confirmed with EDX elemental mapping. Light harvesting photodiodes were fabricated by using n-type silicon substrate through drop cost method. Photo sensitive parameters of fabricated diodes were analyzed by I–V characteristics. The p-CuO@CuS (1:1)/n-Si diode owned a maximum photosensitivity (Ps) ∼ 7.76 × 104 %, photoresponsivity (R) ∼ 798.61 mA/W, external quantum efficiency (E Q E)∼309.66 % and specific detectivity (D*) ∼ 8.19 × 1011 Jones when compared to p-CuS/n-Si diode. The obtained results revealed that the core/shell heterostructure of CuO@CuS is the most appropriate for photo detection. [ABSTRACT FROM AUTHOR]

Metal-insulator-semiconductor (MIS) structured Schottky barrier diodes (SBDs) are the most significant device in optoelectronic device application. Here, we demonstrated a highly rectifying SBDs using a thin interfacial layer among p-type silicon (p-Si) and metal (Cu) junction. These composite films are coated with different concentrations of Ba (0, 5, 10 and 15 wt%) using jet nebulizer spray pyrolysis (JNSP) technique with an optimized substrate temperature of 500 °C. A significant reduction of reverse saturation (Io) current was obtained on introducing the Ba–MoO 3 composite films in between Cu/p-Si interface. X-ray diffraction (XRD) pattern revealed the monoclinic crystalline phases of Ba–MoO 3 thin films along with improved grain size. Field emission scanning electron microscope (FE-SEM) images of the prepared thin films displayed a plate-like structure, which on increasing the Ba concentration transforms into a flag-like structure. The presence of constituent elements like O, Mo, Ba were confirmed by energy dispersive analysis X-Ray (EDAX) spectrum. The atomic force microscopy (AFM), exposed a smoother surface and an improved surface roughness of the film while varying the Ba concentration. Band gap energy of the Ba–MoO 3 films are found to increase after adding the Ba content. The electrical conductivity decreased with increasing Ba concentration of Ba–MoO 3 films corresponding activation energy is increased. All the fabricated Cu/Ba–MoO 3 /p-Si diodes show positive photoconducting nature, in which the ideality factor of the diode decreases gradually with Ba concentration. Hence 15 wt% of Ba shows better device performance relatively with other diodes. Image 1 • Highly rectifying Cu/Ba–MoO 3 /p-Si structured Schottky barrier diodes has been fabricated through low cost jet nebulizer spray pyrolysis technique. • The phase changes was observed (orthorombic to monoclinic) while increasing Ba concentration. • Remarkably, the plate-like and flower-like sufface morphology was revealed by FE-SEM. • Cu/Ba–MoO 3 /p-Si diode fabricated with 15 exposes a lower n = 1.92 values under light condition. • The Cu/Ba–MoO 3 /p-Si diodes highly appropriate for UV photodetector application. [ABSTRACT FROM AUTHOR]

[Display omitted] • A nanostructured MoS 2 thin films were prepared on glass substrate by JNSP technique. • The elongated irregular rod-like structures were revealed through FESEM. • The MoS 2 films deposited at 450 °C exhibit minimum band gap. • We have fabricated p-Si/n-MoS 2 junction diode for different substrate temperature. • A minimum ideality factor of 2.23 was obtained for 550 °C. Inorganic two-dimensional materials are gradually becoming resources for modern electronic device manufacturing. Fascinate of 2D transition metal dicholgonides (TMDs) are particularly high. TMDS are very great potential for their characteristics and band gap structure in optoelectronic devices. In TMDs, 2D MoS 2 is most researchable material due to its good performance and its adequacy of electronic and optoelectronic application. Here we demonstrate MoS 2 thin film for various temperature such as 400, 450, 500, 550 °C via Jet Nebulizer Spray Pyrolysis (JNSP) technique for PN diode application. XRD pattern revealed that the polycrystalline nature of MoS 2 films with hexagonal crystal structure. The elongated irregular rod-like structures were revealed through FESEM. Elemental confirmation studies of Mo and S were done through EDX. The MoS 2 films deposited at 550 °C exhibit minimum band gap. The average conductivity values were found to be increased from 1.730 × 10−8 to 3.877 × 10−7 S/cm with substrate temperature. A positive photo conducting-nature of p-Si/n-MoS 2 diode have been fabricated. Remarkably, the p-Si/n-MoS 2 diode fabricated at 550 °C revealed minimum n values of 2.23. [ABSTRACT FROM AUTHOR]