1. An in-situ investigation of microstructure neighborhood effects on hydrogen-induced dislocation activity.
- Author
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Yan, Haoxue, Kim, Jinwoo, and Tasan, C. Cem
- Subjects
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CRYSTAL defects , *CRYSTAL orientation , *ELECTRON diffraction , *ELASTIC modulus , *HYDROGEN - Abstract
The interactions between hydrogen and crystallographic defects are the key to understanding hydrogen induced localized plasticity or damage mechanisms. However, unraveling such interactions based on the resulting mechanical effects alone can be challenging, due to the spectrum of various effects hydrogen can create in a given microstructure. Pre-deformation or post-mortem characterization of hydrogen segregation has similar limitations, as they can only provide snapshots of these complex processes with challenging spatial and temporal scales. To tackle this, we design in situ experiments that combine electron channeling contrast imaging (ECCI), electron backscattered diffraction (EBSD), and desorption spectroscopy, to investigate hydrogen defect interactions, under no external loading. We show that the inhomogeneous hydrogen distribution within microstructures can cause long-range (>200 nm) dislocation rearrangements. Interpretation of these results as manifestations of boundary-segregation induced stress suggests that microstructural characteristics on either side of the boundary should also play an important role. We provide quantitative assessments of these microstructure neighborhood effects and discuss additional contributions from hydrogen-induced changes in stacking fault energy and elastic modulus. • Hydrogen presence can alter defect substructures and local crystal orientation. • Defect activity likely arise from local lattice accommodation of H-induced stresses. • HE-resistant design lies in uniform H-distribution and accommodating textures. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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