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In this paper, we describe the feedback and tunneling operations of a dual top gate field-effect transistor (FET) with a p+-i-n+ doped silicon nanowire channel. The transistor functions selectively in either a feedback FET (FBFET) or a tunneling FET mode by modulating the source-to-drain voltage, and it features an outstanding subthreshold swing characteristic of 6.15 mV dec–1 with an on/off current ratio (Ion/Ioff) of approximately 106 in the feedback operating mode and of 41.3 mV dec–1 with Ion/Ioff of ∼107 in the tunneling operating mode. Moreover, our device in the FBFET operation mode has memory characteristics with a retention time of 104 s and a program/erase endurance up to 103 cycles owing to the positive feedback loop in the channel region. This study demonstrates the promising potential of our devices in the development of multifunctional electronics. [ABSTRACT FROM AUTHOR]

In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p+–i–n+ doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending. [ABSTRACT FROM AUTHOR]

In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I–V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec−1, an on/off current ratio of approximately 1011, and an on-current of approximately 10−4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail. [ABSTRACT FROM AUTHOR]