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In this work, the physical and electrical properties of SrxTi1-xOy (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are studied in detail. While most recent studies on STO were done on noblelike metal electrodes (Ru, Pt), this work focuses on a low temperature (250 °C) atomic layer deposition (ALD) process, using an alternative precursor set and carefully optimized processing conditions, enabling the use of low-cost, manufacturable-friendly TiN electrodes. Physical analyses show that the film crystallization temperature, its texture and morphology strongly depends on the Sr/Ti ratio. Such physical variations have a direct impact on the electric properties of SrxTi1-xOy based capacitors. It is found that Sr-enrichment result in a monotonous decrease in the dielectric constant and leakage current as predicted by ab initio calculations. The intercept of the EOT vs physical thickness plot further indicates that increasing the Sr-content at the film interface with the bottom TiN would result in lower interfacial equivalent-oxide thickness. [ABSTRACT FROM AUTHOR]

Si dangling bond interface defects (P[sub b0],P[sub b1]) were probed by electron spin resonance in entities of (100)Si with ultrathin SiO[sub 2] grown in ozonated de-ionized water solution at room temperature. After photodesorption of passivating hydrogen, P[sub b0] appears with densities up to ∼ 5 × 10[sup 12] cm[sup -2], a value five times larger than the one standardly attained with high temperature thermal growth. Thus standard quality thermal Si/SiO[sub 2] interface properties, as exposed by the P[sub b0]-type defects criterion (interface traps), are not obtained by oxidation in ozonated water solutions at room temperature. The interface quality may be upgraded by providing additional thermal budget. Yet standard qualitity is still not attained after vacuum annealing at 600°C. [ABSTRACT FROM AUTHOR]