1. Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration.
- Author
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Wu, Zhicheng, Franco, Jacopo, Vandooren, Anne, Roussel, Philippe, Kaczer, Ben, Linten, Dimitri, Collaert, Nadine, and Groeseneken, Guido
- Subjects
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TRANSISTORS , *CHARGE carrier mobility , *FIELD-effect transistors , *METAL oxide semiconductor field-effect transistors , *THIN film transistors , *ANNEALING of metals - Abstract
Low thermal budget junction-less transistors with back-gate are fabricated as top-tier devices for 3-D sequential integration. The impact of back-gate bias on carrier mobility and bias temperature instability (BTI) reliability is investigated. The back-gate bias is shown to modulate the carrier mobility: specifically, mobility is increased under forward back-gate bias (FBB), which is ascribed to the carrier redistribution from the front-gate interface toward back-gate interface. Regarding BTI reliability, if a back-gate bias (VBG) is applied only during ON-state and a constant front-gate stress VG is used, BTI reliability is not influenced by the applied VBG (due to its negligible impact on the front-gate oxide field, Eox). Therefore, supplying an FBB during ON-state can be used to adjust device performance—as VBG modulates the channel current through Vth and mobility—without reliability penalty. On the other hand, if the back-gate bias is applied during both ON- and OFF-states, while a constant stress Vov is maintained by adjusting the front-gate VG [i.e., VG – Vth (VBG) is kept constant under different VBG’s], the BTI reliability can be improved under FBB (due to a reduced Eox in the front-gate) without performance loss. The latter property can be used to improve the device reliability under circuit operation. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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