1. LER-Induced Random Variation–Immune Effect of Metal-Interlayer–Semiconductor Source/Drain Structure on N-Type Ge Junctionless FinFETs.
- Author
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Jung, Seung-Geun, Park, Euyjin, Shin, Changhwan, and Yu, Hyun-Yong
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FIELD-effect transistors ,DOPING agents (Chemistry) ,STANDARD deviations ,RANDOM effects model ,LOGIC circuits ,HYDROGEN evolution reactions ,INDIUM gallium zinc oxide - Abstract
Herein, the line-edge roughness (LER)-induced random performance variation–immune effect of metal–interlayer–semiconductor (MIS) source/drain (S/D) in 7 nm n-type Ge (n-Ge) junctionless field-effect transistors (JLFETs) were investigated by 3-D TCAD simulations. Compared to the device without MIS S/D, the n-Ge JLFET with MIS S/D could effectively reduce the Ge fin doping concentration while maintaining the performance. It was demonstrated analytically that the reduced Ge fin doping concentration of the device with MIS S/D, compared to the device without MIS S/D, decreased the LER-induced random performance variations of the n-Ge JLFET; the standard deviations were reduced to ~0.0318 V for V
th (reduced by ~51.6%), 4.89 ×10−6 A/μm for Ion (reduced by ~92.1%), 1.44 ×10−9 A/μm for Ioff (reduced by ~93.7%), 1.27 mV/dec for SS (reduced by ~23.1%), and ~5.40 mV/V for drain-induced barrier lowering (DIBL) (reduced by ~30.8%). In addition, LER-induced random performance variation was investigated in terms of scaling down fin widths. The results provided critical insight into the variability reduction of the 7 nm n-Ge JLFETs. [ABSTRACT FROM AUTHOR]- Published
- 2021
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