1. Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates
- Author
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Sugiyama, N., Moriyama, Y., Nakaharai, S., Tezuka, T., Mizuno, T., and Takagi, S.
- Subjects
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EPITAXY , *GROWTH rate , *SILICON , *GERMANIUM - Abstract
The epitaxial growth of Si and SiGe layers on (1 1 0) Si substrates using UHV-CVD is studied with comparing that on (1 0 0) substrates. It is revealed that, while the growth rate on (1 1 0) surfaces is quite lower than that on (1 0 0) surfaces, the Ge content of SiGe is the same between (1 0 0) and (1 1 0) surfaces, meaning that the ratio of decomposition yields of source molecules for Si and Ge are same in both the (1 0 0) and (1 1 0) substrates. This characteristic is expected to lead to the epitaxial growth of SiGe films with uniform Ge content over the three-dimensional patterned structure, which can be utilized for vertical FET and Fin-FETs. Actually, it has been experimentally confirmed that the SiGe films grown over trench structures has a uniform Ge content. [Copyright &y& Elsevier]
- Published
- 2004
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