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Cadmium (Cd) pollution is a serious threat to food safety and human health. Minimizing Cd uptake and enhancing Cd tolerance in plants are vital to improve crop yield and reduce hazardous effects to humans. In this study, we designed three Cd concentration stress treatments (Cd1: 0.20 mg·kg -1 , Cd2: 0.60 mg·kg -1 , and Cd3: 1.60 mg·kg -1 ) and two foliar silicon (Si) treatments (CK: no spraying of any material, and Si: foliar Si spraying) to conduct pot experiments on soil Cd stress. The results showed that spraying Si on the leaves reduced the Cd content in brown rice by 4.79-42.14%. Si application increased net photosynthetic rate (Pn) by 1.77-4.08%, stomatal conductance (Gs) by 5.27-23.43%, transpiration rate (Tr) by 2.99-20.50% and intercellular carbon dioxide (CO 2 ) concentration (Ci) by 6.55-8.84%. Foliar spraying of Si significantly increased the activities of superoxide dismutase (SOD) and peroxidase (POD) in rice leaves by 9.84-14.09% and 4.69-53.09%, respectively, and reduced the content of malondialdehyde (MDA) by 7.83-48.72%. In summary, foliar Si spraying protects the photosynthesis and antioxidant system of rice canopy leaves, and is an effective method to reduce the Cd content in brown rice., (© 2024. The Author(s).)

By virtue of the high theoretical capacity of Si, Si-related materials have been developed as promising anode candidates for high-energy-density batteries. During repeated charge/discharge cycling, however, severe volumetric variation induces the pulverization and peeling of active components, causing rapid capacity decay and even development stagnation in high-capacity batteries. In this study, the Si/Fe 2 O 3 -anchored rGO framework was prepared by introducing ball milling into a melt spinning and dealloying process. As the Li-ion battery (LIB) anode, it presents a high reversible capacity of 1744.5 mAh g -1 at 200 mA g -1 after 200 cycles and 889.4 mAh g -1 at 5 A g -1 after 500 cycles. The outstanding electrochemical performance is due to the three-dimensional cross-linked porous framework with a high specific surface area, which is helpful to the transmission of ions and electrons. Moreover, with the cooperation of rGO, the volume expansion of Si is effectively alleviated, thus improving cycling stability. The work provides insights for the design and preparation of Si-based materials for high-performance LIB applications.

In this study, titania nanotubes (TNTs) incorporating silicon (Si) were formed on Ti disks using anodization and electron beam evaporation (EBE) technology to improve the osteogenic activity. The amount of Si was exquisitely adjusted by controlling the duration of EBE to optimize the biofunctionality. As the Si was incorporated, the samples exhibited hydrophilic surfaces. Long lasting and controllable Si release was observed from the EBE-modified samples without cytotoxicity. Moreover, initial cell adhesion, spreading, proliferation and osteogenic differentiation of MC3T3-E1 cells were evaluated. The results showed a notable enhancement of spreading, osteogenesis and differentiation of cells on silicon-coated TNTs (Si-TNTs). In particular, samples with highest amount of silicon (∼5.93% Si) displayed greatest augmentation of ALP activity, osteogenic-related gene expression and mineralization compared to the others in the present study. It was indicated that the modification with TNTs and appropriated Si content resulted in enhanced osteoblastic spreading, proliferation and differentiation, and therefore has the potential for future applications in the field of orthopedics., (Copyright © 2018 Elsevier B.V. All rights reserved.)

It is commonly accepted that silicon-doped hydroxyapatite (HAp) can achieve good repair effects for both spinal fusion and bone defect filling. However, the underlying mechanism by which silicon aids such beneficial effects is still not fully understood. Herein, we report on silicon-doped hydroxyapatites with excellent biocompatibility to osteoblast cells and suggest the signaling pathway involved. Non-doped HAp and trace Si-doped HAp (Si/HAp) with Si concentration close to and higher than natural bones were synthesized (i.e., 32, 260, and 2000 ppm Si). The composition, crystal lattice vibration pattern, and morphology of these samples are characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR), and SEM, respectively. Positive biological activities of these Si-doped HAp materials were demonstrated through a cytotoxicity study and with the MTT and alkaline phosphatase (ALP) activity assays. The Si-doped samples were not toxic to MC3T3-E1 cells. Indeed, osteoblast proliferation measurement illustrated that 2000 ppm Si-doped HAp increased osteoblast proliferation by about 1.6 times compared to non-doped HAp. The ALP assay also proves that the trace Si doping has the function to enhance cell proliferation and differentiation. The ALP assay showed that Si doping also enhanced cell differentiation. QRT-PCR results revealed that Si-doped HAp enhanced osteogenic differentiation of osteoblast cells by upregulating genes such as MAPK3, Fzd1, Wnt1, Lrp6, and BMP2. In conclusion, Si-doped HAp promotes osteoblast proliferation and differentiation by activating the Wnt/β-catenin and MAPK signaling pathways. This work could provide useful information of the beneficial effects of silicon in human bones and provide clues as to the molecular mechanism of the promotive effect of Si-doped HAp biomaterials.

Unraveling the formation process of Ni precipitates at molecular scale is important for understanding the fate and mobility of Ni species in the real environment. Dissolved Si presents in the natural environment ubiquitously, which can alter Ni sorption as well as incorporation into neoformed precipitates. Batch experiments show that the dissolved Si leads to a rapid increase in the Ni sorption rate and interferes with the formation of Ni precipitates. The results of diffuse reflectance spectroscopy (DRS) and extended X-ray absorption fine structure (EXAFS) spectroscopy analyses suggest that the nucleation of a (Ni,Al) phyllosilicate phase involves a kaolinite-like local structure. Then, the substantial presence of Si affects the initial formation of Ni precipitate nucleation and the resulting crystal growth. Dioctahedral kaolinite may act as a nucleating surface for the heterogeneous formation of trioctahedral (Ni,Al) phyllosilicates under environmentally relevant conditions. This study provides experimental evidence on nucleation and epitaxial growth processes of Ni precipitate on kaolinite and provides insight on the relationship between substrates and precipitation, which is crucial for understanding the physicochemical behavior of Ni on mineral surfaces., (Copyright © 2017 Elsevier Ltd. All rights reserved.)

The main inorganic minerals in natural bones are non-stoichiometric hydroxyapatite (HA, Ca 10 [PO 4 ] 6 [OH] 2 ) doped with various trace elements, which may possess important biochemical effects. To investigate the functions of Sr and Si elements in human hard tissues, non-doped HA, trace Si doped HA, Si and Sr codoped HA with the concentration of natural bones are synthesized by hydrothermal method in this study. The samples are characterized by powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscope (SEM). The biological activities are evaluated via cytotoxicity study, adhesion and proliferation of osteoblast measurement, and alkaline phosphatase (ALP) assay. All the synthesized materials are HA phase, which have hierarchical structures with oriented HA nanorods assembled into the platy particles. These materials are non-cytotoxic against L929 cells line even at 400 μg/ml powder suspension. The results clearly indicate that the proliferation of L929 cells increases with trace elements doping from trace Si-HA to Si + Sr-HA. The adhesion and proliferation of osteoblast measurement illustrates that proliferation of osteoblasts advances about 1.3 times for Si-HA and about 1.8 times for Si + Sr-HA compared with undoped HA. In general, Si-HA with trace Si element shows enhanced cell differentiation, and Si + Sr-HA dual-doped with Si and Sr elements presents increased biological activity compared with Si-HA.

We investigated the potential role of silicon in improving tolerance and decreasing cadmium (Cd) toxicity in durum wheat (Triticum turgidum L. durum) either through a reduced Cd uptake or exclusion/sequestration in non-metabolic tissues. For this, plants were grown in hydroponic conditions for 10 days either in presence or absence of 1 mM Si and for 11 additional days in various Cd concentrations (0, 0.5, 5.0 and 50 μM). After harvesting, morphological and physiological parameters as well as elemental concentrations were recorded. Cadmium caused reduction in growth parameters, photosynthetic pigments and mineral nutrient concentrations both in shoots and roots. Shoot and root contents of malate, citrate and aconitate increased, while contents of phosphate, nitrate and sulphate decreased with increasing Cd concentrations in plants. Addition of Si to the nutrient solution mitigated these adverse effects: Cd concentration in shoots decreased while concentration of Cd adsorbed at the root cell apoplasmic level increased together with Zn uptake by roots. Overall, total Cd uptake decreased in presence of Si. There was no co-localisation of Cd and Si either at the shoot or at the root levels. No Cd was detected in leaf phytoliths. In roots, Cd was mainly detected in the cortical parenchyma and Si at the endodermis level, while analysis of the outer thin root surface of the plants grown in the 50 μM Cd + 1 mM Si treatment highlighted non-homogeneous Cd and Si enrichments. These data strongly suggest the existence of a root localised protection mechanism consisting in armoring the root surface by Si- and Cd-bearing compounds and in limiting root-shoot translocation.

Current synthetic grafts for bone defect filling in the sinus can support new bone formation but lack the ability to stimulate or enhance osteogenic healing. To promote such healing, osteoblast progenitors such as human periosteum cells must undergo osteogenic differentiation. In this study, we tested the hypothesis that degradation of porous amorphous silica fibrous (PASF) scaffolds can enhance human periosteum cell osteogenic differentiation. Two types of PASF were prepared and evaluated according to their densities (PASF99, PASF98) with 99 and 98% porosity, respectively. Silicon (Si) ions were observed to rapidly release from both scaffolds within 24 h in vitro. PASF99 Si ion release rate was estimated to be nearly double that of PASF98 scaffolds. Mechanical tests revealed a lower compressive strength in PASF99 as compared with PASF98. Osteogenic expression analysis showed that PASF99 scaffolds enhanced the expression of activating transcription factor 4, alkaline phosphatase, and collagen (Col(I)α1, Col(I)α2). Scanning electron microscopy showed cellular and extracellular matrix (ECM) ingress into both scaffolds within 16 days and the formation of Ca-P precipitates within 85 days. In conclusion, this study demonstrated that PASF scaffolds enhance human periosteum cell osteogenic differentiation by releasing ionic Si, and structurally supporting cellular and ECM ingress., (© 2015 Wiley Periodicals, Inc.)

Silicon (Si) uptake by the roots is mediated by two different transporters, Lsi1 (passive) and Lsi2 (active), in rice (Oryza sativa). Both transporters are polarly localized in the plasma membranes of exodermal (outer) and endodermal (inner) cells with Casparian strips. However, it is unknown how rice is able to take up large amounts of Si compared with other plants, and why rice Si transporters have a characteristic cellular localization pattern. To answer these questions, we simulated Si uptake by rice roots by developing a mathematical model based on a simple diffusion equation that also accounts for active transport by Lsi2. In this model, we calibrated the model parameters using in vivo experimental data on the Si concentrations in the xylem sap and a Monte Carlo method. In our simulation experiments, we compared the Si uptake between roots with various transporter and Casparian strip locations and estimated the Si transport efficiency of roots with different localization patterns and quantities of the Lsi transporters. We found that the Si uptake by roots that lacked Casparian strips was lower than that of normal roots. This suggests that the double-layer structure of the Casparian strips is an important factor in the high Si uptake by rice. We also found that among various possible localization patterns, the most efficient one was that of the wild-type rice; this may explain the high Si uptake capacity of rice., (© The Author 2015. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists. All rights reserved. For permissions, please email: journals.permissions@oup.com.)

The article presents the study on the comparison of gain coefficient of laser diode on silicon and InP substrate. Fabry–Perot GaInAsP bulk laser diode on InP/Si substrate is successfully obtained to study the optical gain coefficient of laser diode. The influences of temperature, threshold current comparison, and optical gain achievements between bulk InP/Si laser diode substrate and InP laser diode substrate are also analyzed using the same growth structure. A new approach is found by the research group which involves bonding of 1 μm InP semiconductor crystal and a low‐cost silicon crystal prior to epitaxial laser structure growth. With the help of metal–organic vapor‐phase epitaxy technique, GaInAsP double‐heterostructure laser is epitaxially deposited on the well‐bonded InP/Si crystal. Fabry–Perot lasing under pulsed condition is achieved, and the lasing characteristics of InP/Si substrate are compared with that of InP laser device to study the gain coefficient. [ABSTRACT FROM AUTHOR]

Yb2Si2O7/Si bilayer environmental barrier coatings (EBCs) are widely studied for the protection of SiC-based ceramic matrix composites (CMCs). One life-limiting factor for EBCs exposed to high-temperature steam environments is the formation and growth of cracked thermally grown oxide (TGO), which is caused by the volume contraction during β-cristobalite to α-cristobalite phase transformation upon cooling to ~ 220 °C. The cracked TGO provides a short diffusion path for oxidants and results in accelerated TGO growth and a short EBC life. Therefore, EBCs need a new bond coat that can prevent the thermally grown SiO2 from cracking as well as the resultant fast growth. In this study, a Si bond coat modified with Al2O3 was developed, and the oxidation behavior of EBCs using the modified Si bond coat was evaluated in flowing 90% H2O (g) + 10% air at 1316 °C. It was observed that no TGO cracking occurred when a certain amount of Al3+ and Yb3+ were dissolved in the TGO. The TGO growth rate in the EBCs with modified Si bond coat was ~ 28% slower than that of baseline EBCs with Si bond coat. [ABSTRACT FROM AUTHOR]

Copyright of Przegląd Elektrotechniczny is the property of Przeglad Elektrotechniczny and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Ssamchoo is recently attracting attention as a household hydroponic vegetable in Korea. It has a refreshing texture and a rich content of vitamins and fiber. Ssamchoo with a wide leaf area is suitable for traditional ssam or vegetable wraps, as well as a vegetable for salads; thus, it can be used in a variety of dishes. However, Ssamchoo plants responds sensitively to the nutrient solution, and it is often difficult to secure sufficient leaf area and robust growth using a commercial nutrient solution for leafy vegetables. This study consisted of three experiments conducted to develop the nutrient solution for Ssamchoo grown in a newly developed home hydroponic cultivation system using light-emitting diodes as the sole source of light. In the first experiment, growth and development of Ssamchoo in a representative commercial nutrient solution, Peters Professional (20-20-20, The Scotts Co., Marysville, OH, USA), was compared with laboratory-prepared nutrient solutions, GNU1 and GNU2. As a result, the Ssamchoo grown in Peters Professional had a high NH4+ content in the tissue, leaf yellowing, darkened root color, and suppressed root hair development. In addition, adverse effects of ammonium such as low fresh weight and shorter shoot length were observed. In the second experiment, Peters Professional was excluded, and the ratio of NO3− to NH4+ in the GNU1 and GNU2 nutrient solutions was set to four levels each (100:0, 83.3:16.7, 66.7:33.3, and 50:50). As a result, the fresh weights of 83.3:16.7 and 66.7:33.3 were the greatest, and the leaf color was a healthy green. However, at 100:0 and 50:50 NO3−/NH4+ ratios, the fresh weight was low, and leaf yellowing, tip burn, and leaf burn appeared. The nutrient solution with a 83.3:16.7 NO3−- to-NH4+ ratio, which gave the greatest fresh weight in the second experiment, was chosen as the control, while the solution with a 50:50 NO3−/NH4+ ratio with a lower nitrate content among the two unfavorable treatments was selected as a treatment group for the next experiment. In the third experiment, NH4+ was partially replaced with urea to make four different ratios of NO3− to NH4+ to urea (83:17:0, 50:50:0, 50:25:25, and 50:0:50) in combination with two levels of Si (0 and 10.7 mmol·L−1 Si). The greatest fresh weight was obtained in the treatment in which the NO3−/NH4+/urea ratio was 50:25:25. In particular, when Si was added to the solution, there was no decrease in the number of leaves, and plants with the greatest fresh weight, chlorophyll content, and leaf area were obtained. The number of leaves and leaf area are important indicators of high productivity since the Ssamchoo is used in ssam dishes. It can be concluded that a solution with a NO3−/NH4+/urea ratio of 50:25:25 and supplemented with 10.7 mmol·L−1 Si is the most suitable nutrient solution for growing Ssamchoo in the home hydroponic system developed. [ABSTRACT FROM AUTHOR]

Silicon nanoparticles have been synthesized via a highly scalable heat scavenger-assisted magnesiothermic reduction of rice husk. This environmentally benign, highly abundant, and low-cost SiO2 source allows for the production of silicon nanoparticles with good electrochemical performance as an anode material for Li-ion batteries. The addition of KBr, as an effective heat scavenger agent for the highly exothermic magnesium reduction process. Silicon nanoparticles have an average particle size of 31.04 nm, a surface area of 14.61 m2g−1, and pore size of 1.69 nm. Silicon nanoparticles are capable of high electrochemical performance as an anode material for Lithium-ion batteries performance with lithiation at 0.16 V, delithiation at 0.54 V, the electrolyte resistance (Rs) at 5.07 Ω, the charge-transfer resistance (Rct) at 10.07 Ω, and a specific capacity of 3416 mAhg−1.

The effect of laser etching in air and laser-liquid composite etching on Si wafers with a Nd:YAG laser and water was studied with equivalent laser operating parameters. The results show that the depth and width of the etched grooves in the laser-liquid composite processing were smaller than those obtained when laser processing in air; moreover the large amounts of slag, recast layer and microcracks typical with laser processing Si in air were eliminated when processing with the laser-liquid composite. This was found to be due to the good cooling effect of the liquid can reduce the accumulation of laser heat in the processing area and the molten material is discharged from the groove through the impacting of the liquid, thereby improving the processing quality. The results of the research demonstrate that the laser-liquid composite processing technology can effectively reduce the defects in traditional laser processing in air. [ABSTRACT FROM AUTHOR]

We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiO2/Si (MFIS) gate structure. We propose a method of experimentally extracting the number of trapped charges during the memory operation, by measuring the charges in the metal gate and Si substrate. We verify that the amount of trapped charges increases during the endurance fatigue process. This is the first time that the trapped charges are directly experimentally extracted and verified to increase during endurance fatigue. Moreover, we model the interplay between the trapped charges and ferroelectric polarization switching during endurance fatigue. Through the consistency of experimental results and simulated data, we demonstrate that as the memory window (MW) decreases: 1) the ferroelectric characteristic of Hf0.5Zr0.5O2 is not degraded; 2) the trap density in the upper bandgap of the gate stacks increases; and 3) the reason for MW decrease is increased trapped electrons after program operation but not related to hole trapping/detrapping. Our work is helpful to study the charge trapping behavior of FeFET and the related endurance fatigue process. [ABSTRACT FROM AUTHOR]

Silicon (Si) anode with ultra-high capacity and low cost are highly desirable for next-generation high-energy lithium-ion batteries, whereas suffers from severe volume change that causes rapid capacity decay upon lithiation/delithiation. The development of high-performance binders to alleviate volumetric expansion and maintain integrity of Si particles remains a significant challenge. Here, reported is a novel organic/inorganic hybrid binder composed of partial neutralized polyacrylic acid (PAAS) and sodium metaborate tetrahydrate (SMTH), which achieves in-situ crosslinking upon drying wafer electrodes. The robust crosslinked network structure with borate ester bonds is successfully attained, and can be modulated by changing the content of sodium metaborate. The strong covalent bond network endows the hybrid binder system with superior mechanical properties and powerful adhesion, which improve the contact and integrity of wafer silicon electrode by suppressing volume expansion and exfoliation, therefore facilitating Li-ion migration and enhancing electrochemical performance. The resulting commercial micro-silicon wafer electrode with PAAS/0.08SMTH binder remains a reversible specific capacity of 1670 mAh g−1 after 150 cycles at 300 mA g−1, largely superior to that prepared with the original PAAS binder because its reversible specific capacity was determined to be only 1046 mAh g−1 under identical conditions. The in-situ crosslinked 3D network structure provides a facile feasible way to improve the high-capacity anode materials for lithium-ion batteries. [Display omitted] • A novel organic/inorganic hybrid binder composed of PAAS and SMTH is developed. • The binder is in-situ cross-linked upon drying wafer electrode. • The 3D binder network endows the better mechanical properties and adhesion. • The hybrid binder promotes the formation of a stable SEI layer. • The robust binder enhanced both Li-ion migration and electrochemical performance. [ABSTRACT FROM AUTHOR]

Vertical biristors are small footprint (${4}{F}^{{2}}$) floating base bipolar junction transistors (BJTs) proposed for high-speed volatile memory applications. One key challenge is (i) the high latch-up voltage with Si-based biristors because of the high threshold of impact ionization (II) in Si. In this article, an epitaxial ${n}^{+}/{i}/{\delta {p}}^{+}/{i}/{n}^{+}$ -based vertical biristor is proposed with an asymmetric doping profile that enables sub-bandgap II only in the negative polarity. First, in the negative polarity, a latch-up voltage as low as 0.5 V due to sub-bandgap II is demonstrated. Faster programming with higher bias is observed. Second, erase is demonstrated in the positive bias, where II is insignificant. Overall, a large read window (${\Delta } {I}=\text {0.01 mA}$) with a low variability (${\sigma /\mu }$ in ${\Delta }{I}$) for cycle-to-cycle (C2C < 1%) and device-to-device (D2D < 5%). Retention in excess of $1 {\mu }\text{s}$ is observed, taking into account C2C and D2D variations. A high endurance (> 107cycles) is also observed. Therefore, asymmetrically doped vertical biristor is promising for very low voltage high speed memory application compared to dynamic random access memory (DRAM). [ABSTRACT FROM AUTHOR]

Copyright of Progress in Plant Protection is the property of Institute of Plant Protection and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

MoS2 has been well established as a promising two-dimensional candidate for optoelectronic applications, due to its unique optical and electrical properties. Here, we report fabrication of a novel heterojunction bipolar transistor (HBT) based on MoS2/Si heterojunction for the first time. Optoelectronic properties of the fabricated MoS2/Si-based HBT confirm the high-sensitivity of the device to a broad range of incident wavelengths from 380 nm to 810 nm. A Responsivity of about 400 A/W, one order of magnitude higher than the previously reported MoS2 based photodetectors, and a gain of about 1200 are obtained in response to the incident wavelength of 380 nm by the fabricated device. Our results open up a way to fabricate highly sensitive broad band photodetectors with a simple and low cost fabrication process, suitable for Si-based integrated electronics. [ABSTRACT FROM AUTHOR]

By scanning the charge-deposition profile produced by a pulsed laser throughout a device, the spatially dependent charge-collection efficiency (CCE) can be determined. This is demonstrated by extracting the depth-dependent CCE in two photodiodes. The resulting collection efficiency curves are found to be consistent with their device structures and the expected charge-collection mechanisms. By applying the efficiency curves to the charge-deposition curves for both heavy ions and pulsed X-rays, the calculated collected charge values show very good agreement with experimental results. This suggests that the profiles extracted using the laser can help predict charge-collection data from other excitation sources and could improve modeling efforts by determining sensitive volumes. [ABSTRACT FROM AUTHOR]

Vacuum brazing of austenitic stainless steel (SS) under stress with copper-based filler was carried out to assess the susceptibility of liquid metal embrittlement (LME) on stress. Dipping of the SS pipe into molten copper and CuSi3 was performed for comparison. The mechanisms of stress on Cu-SS LME and the effect of Si during cracking were discussed. Test results indicated that microcracks caused by stress concentration increase the possibility of LME. Furthermore, LME was suppressed by the Fe3Si layer between copper and SS. However, the melting range of the filler extended by the addition of Si increases the probability of LME for longer contacting. Accordingly, the addition of Si into copper-based filler should be avoided for most joining methods of SS with high stress concentration. [ABSTRACT FROM AUTHOR]

Plants treated with metals better fend off infection by pathogens. This activity is mediated, at least in part, by the activation of the salicylic acid (SA) signaling pathway. Previous work in our laboratory demonstrated that silicon (Si) could alleviate copper (Cu) toxicity stress in Nicotiana tabacum. However, how Si affected expression of genes involved in SA biosynthesis and signaling in N. tabacum under Cu stress was unclear. Therefore, we investigated this at two time points. Roots of plants treated with Cu toxicity for one week exhibited increased transcript levels for Isochorismate Synthase1, a gene encoding a key enzyme involved in SA biosynthesis and the addition of Si further enhanced expression. Microarray analysis identified a number of disease defense-associated genes up-regulated in N. tabacum roots after one week of Cu toxicity treatment and further increased when plants were also supplemented with Si. However, the effect of Si on expression of these genes was lost after three weeks of treatment, indicating these effects are dynamic. [ABSTRACT FROM AUTHOR]

The Timepix3 hybrid-pixel readout chip consists of a matrix made of 256 × 256 square-shaped pixels with a 55-μm pitch, which can be hybridized to several semiconductors, such as silicon (Si) or cadmium telluride (CdTe) with thicknesses up to 5 mm. Working as an event-based readout chip, it simultaneously records the time-over-threshold (ToT) in each pixel, measuring the deposited energy, as well as the time-of-arrival (ToA), with a time resolution of 1.5 ns. In this article, we present the energy calibration of two Timepix3 chips: the first one was bump-bonded with a 300-μm-thick silicon sensor and the second one with a 1-mm-thick CdTe sensor. Both detectors were calibrated with per pixel calibration, using the monochromatic SOurce of Low-Energy X-rays [SOLEX from Henri Becquerel National Laboratory (LNHB) at CEA Saclay] and a set of calibration-grade sealed radioactive sources. Evaluations were carried out over the energy range 6-122 keV for Timepix3 Si and 20 keV- 1.332 MeV for Timepix3 CdTe. Based on this experimental procedure, an energy resolution of 2.6 keV (3.4%) at 59.5 keV was observed for Timepix3 Si. For Timepix3 CdTe, this parameter was 5.6 keV (9.4%) at 59.5 keV, 27.24 keV (4.1%) at 661.7 keV, and 47.4 keV (3.5%) at 1.332 MeV. It is the first time that CdTe bump-bonded Timepix3 spectral performances were evaluated for gamma rays above 1 MeV. The reconstruction of the full-energy peak for such high energies is possible due to the ToA information, which allows the identification of all interactions caused by a given gamma ray within the detector. [ABSTRACT FROM AUTHOR]

Two field experiments were carried out at the Experimental Farm of Faculty of Agriculture (Saba Basha), Alexandria University, Egypt, during two successive summer seasons of 2019 and 2020, to study the response of four maize hybrids to foliar application of silicon (Si) under salinity conditions. This experiment was laid out in a split-plot design in three replications. Where, the main plots were allocated by maize hybrids (SC 2066, SC 2055, SC 3062, and TWC 352), while the subplots were occupied by foliar application of Si concentrations (spray water, 100, 150, and 200 mg/l). The results showed that the four maize hybrids differed in all the studied characters i.e. plant height at harvest, ear length (cm), number of rows/ear, number of grains/row, number of grains/ear, 100-grain weight (g), biological yield, grain yield (t/ha), straw yield (t/ha), and harvest index (%), where TWC352 recorded the highest values of these traits. Increasing Si rates from 0 to 200 mg/l increased all the studied parameters in both seasons. The interaction was significant in all characters, whereas sowing SC3062 hybrid with foliar application of the higher concentration 200 mg/l of Si achieved the highest mean values of yield and yield components under the soil as affected by salinity in both seasons. [ABSTRACT FROM AUTHOR]

Copyright of Progress in Plant Protection is the property of Institute of Plant Protection and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

The combination of microstructures and nanostructures has broad application prospects. However, most existing methods are oriented to fabricating microstructures and nanostructures separately, and the fabrication of nanostructures on a microstructured surface at the wafer level is rarely studied. In this work, a new method of fabricating large‐area high aspect ratio nano‐cylinders on micro‐pillars based on a colloidal crystal mask is proposed. An experimental device for stripping and draining was designed to create a polystyrene colloidal crystal mask. Together with reactive‐ion etching and metal‐assisted chemical etching, high aspect ratio nano‐cylinders on micro‐pillars with controllable size were obtained on a 4‐inch silicon wafer. Wetting tests were performed on four groups of fabricated structures of different sizes, and the results showed that all samples were superhydrophobic. Thus, a method for fabricating uniform, size‐controllable, large‐area high aspect ratio nano‐cylinders on micro‐pillars with great potential as a superhydrophobic engineering material is proposed. [ABSTRACT FROM AUTHOR]

Wet anisotropic etching of Si{100} results in micro‐pyramids/hillocks bounded by four {111} planes. These kinds of geometrical structures are needed to reduce the front surface reflectance from silicon by taking multiple internal reflections of the incident ray and thus increase the efficiency of the solar cells. In this work, surface texturing of Si{100} is performed at different temperatures in a very low concentration CMOS compatible tetramethylammonium hydroxide (TMAH) without using any additive and agitation. The present research is aimed to significantly reduce the etching time in an extremely low concentration TMAH to texture the silicon surface for obtaining the lowest possible reflectance. Etching temperature is varied from 80 to 95°C with a step of 5°C. For each temperature, the etching time is also varied from 5 to 40 min with an interval of 5 min, whereas etching concentration is made a fix to 0.5 wt%. Surface morphology with dense and uniform pyramidal structures is achieved on the silicon samples etched at 85°C for 25 min. These samples provide the average solar weighted reflectance (Rsw) of around 10% and the lowest reflectance of 6.7% at 790 nm. [ABSTRACT FROM AUTHOR]

The X-ray crystal density method uses silicon spheres highly enriched in 28Si as a primary method for the dissemination of the SI base unit kilogram yielding smallest possible uncertainties associated with the mass m within a few parts in 10−8. This study compares different available and newly developed analytical methods and their results for the determination of the molar mass M of silicon highly enriched in 28Si (Me) and of silicon (Mx) with an almost natural isotopic distribution. While for Me relative uncertainties urel(Me) in the lower 10−9 range are obtained routinely, it was not possible to fall below a value of urel(Mx) < 4 × 10−6 in the case of natural silicon, which is approximately three orders of magnitude larger. The application of the state-of-the-art isotope ratio mass spectrometry accompanied with sophisticated thoroughly investigated methods suggests an intrinsic cause for the large uncertainty associated with the molar mass of natural silicon compared to the enriched material. [ABSTRACT FROM AUTHOR]

The existing solar cell anti‐reflection film technology still cannot adequately meet the light trapping needs of solar cells. In this Letter, double‐layered SiNx:H films were prepared for c‐Si solar cells by plasma enhanced chemical vapor deposition (PECVD). Herein, the authors introduce a simple, convenient method to lower the reflectance in silicon solar cells by applying double‐layered SiNx:H film to increase the refractive index of such film. Compared to the single layer film devices, the reflectance of the double‐layered SiNx:H film can be significantly reduced by >30% through enhanced absorption of light in solar cells. This method has achieved an average of 0.08% conversion efficiency, with the highest being 0.18%. In addition, the double‐layer film solar cells also showed a better passivation performance than that of the single‐layer film, so that the minority carrier lifetime was up to 137 µs. Therefore, the improvement of solar cell efficiency mainly come from the decrease of reflectivity and the improvement in film passivation performance. The work of this Letter demonstrated the light trapping advantages and passivation enhancement performance of double‐layer films applied to single crystal silicon solar cells. [ABSTRACT FROM AUTHOR]

Tellurene, a single layer of tellurium, is a new emerging 2D material and a possible candidate for the post‐silicon era. It has anisotropic carrier effective mass in zigzag and armchair directions. Therefore, the study of the anisotropic performance of tellurene FETs is a timely topic. In this work, the authors study the transport mechanism and performance metrics of tellurene n‐channel and p‐channel transistors using a quantum simulation. Heavy carrier mass in the armchair direction effectively blocks the tunnelling current and the transport is governed by thermionic emission over the potential barrier. On the other hand, lighter carrier mass in the zigzag direction results in a mixed tunnelling and thermionic transport mechanism. The n‐channel transistor has an on‐state current of 894 μA/μm, a sub‐threshold slope of 62 mV/dec, a 9.27 mS/μm transconductance, a 0.129 ps delay, and a 0.046 fJ/μm dynamic power loss. The p‐channel metrics are, respectively, 852 μA/μm, 62 mV/dec, 9.24 mS/μm, 0.117 ps, and 0.040 fJ/μm. Both the transistors comply with the International Technology Roadmap for Semiconductors 2026 low operating power device requirements. [ABSTRACT FROM AUTHOR]

In this Letter, an uncooled monolithic resonant terahertz (THz) thermal detector using a standard 55 nm CMOS technology is presented. The detector is constructed by the integration of a loop antenna loaded with a polysilicon resistor and a proportional to absolute temperature sensor, which is used as a temperature‐sensitive device. An overview of the design considerations, as well as the comparatively better characterisation results are demonstrated in detail. A high‐temperature coefficient of voltage (TCVD) of 10.11 mV/°C, a maximum responsivity of 48.67 V/W, and a minimum noise equivalent power of 1.22 μW/Hz0.5 for the thermal detector are measured at the optimal operating point of 2.58 THz. [ABSTRACT FROM AUTHOR]