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In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky barrier diode research, highlighting a surge in interest in tailored filaments for thin films, photovoltaic cells, and advanced electronics. The fundamental principles of MIS functionalization on the intermediate insulator layer within the MIS structure are detailed, followed by a comprehensive discussion of approaches to MIS-based diode fabrication, meticulously addressing specific details of metal, insulator and semiconductor layers. This review delves into bespoke device manufacturing methods, underscoring their significance in the scientific landscape. It examines principal materials used in production, focusing on optical, electrical applications explores the evolution of insulating materials, doping effects, manufacturing technologies and potential device applications. Challenges in MIS diode manufacturing are outlined, exploring various techniques, their advantages and disadvantages. JNSP thin film coating emerges as a preferred technique due to its cost-effectiveness, ease of handling, and non-toxic nature. From our comprehensive review, it is evident that transition metals are preferred materials in previous research. The article concludes by addressing future perspectives, guiding novel advancements and contemplating applications of bespoke filaments in optoelectronic devices and applications. This holistic exploration aims to contribute to the ongoing discourse and evolution of MIS-based devices across diverse fields. [Display omitted] • 50 years research of MIS Schottky barrier diodes: Focused on, photovoltaic applications and advanced electronics. • Key challenges associated to fabricate the MIS SBDs methods are addressed. • Recent developments of optoelectronic devices and optimal materials for the fabricate MIS structures were reviewed. [ABSTRACT FROM AUTHOR]

In this work, we have successfully prepared the nano-coral to be intact with the mesoporous of Sn-HfO2 thin films through the (jet nebulizer spray pyrolysis) JNSP technique from different Sn (5, 10, 15 Wt.%) to improve the MIS Schottky diode Al/Sn-HfO2/n-Si. To achieve the phase transformations (monoclinic to orthorhombic) in pure hafnium oxide thin films, we have added the Sn ions as the composite at optimized temperature 600 °C. The XRD characteristic used to determine the structural parameters such as the phase, grain size for pure HfO2, and composite Sn-HfO2 films. The mesoporous with irregularly shaped balls and nano coral-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy have been determined from the UV Vis spectrum. The EDAX elementary analysis has confirmed the presence of Sn, Hf, O elements in each film. The XPS spectrum has confirmed Sn's presence and binding peak with a spin-orbit on the films' surface. I-V curves of forward and reverse bias determine the barrier height, ideality factor, and saturation currents from the thermionic emission theory. All the Al/Sn@HfO2/n-Si diode parameters are strongly improved after the incorporation of Sn ions. [ABSTRACT FROM AUTHOR]

In this work, pure and Mn-doped nickel ferrite (Ni1-xMnxFe2O4, x = 0, 3, 6, 9, and 12 wt%) thin films were prepared using facile nebulizer spray pyrolysis technique. The effect of Mn concentration on the structural, optical, and magnetic properties was studied. The XRD pattern confirms the cubic spinel structure of Ni1-xMnxFe2O4 thin films and reveals the preferred orientation along the (311) direction for each film. Moreover, the average crystallite size (D) is found to increase from 13 to 30 nm with increasing Mn concentration. The FESEM micrographs exhibit randomly arranged plate-like and rice-like grains. The elements such as Mn, Ni, Fe, and O are confirmed by the EDX analysis. The optical band gap energy (Eg) varies between 2.90 and 3.60 eV. The Ni1-xMnxFe2O4 film prepared with 3 wt% of Mn exhibits superior ferrimagnetic behavior with the highest value of ηB (57.31) due to the high crystallinity, packing density, and smooth surface of the film. The present work shows that the facile nebulizer spray pyrolysis technique can produce high-quality Ni1-xMnxFe2O4 thin films with good magnetic properties. [ABSTRACT FROM AUTHOR]

Pure CeO2 and Ni-doped cerium oxide (NDC) films were deposited by a facile and economic jet nebulizer spray pyrolysis (JNSP) process at 450 ºC substrate temperature. Here, efforts have been done to enhance the performance of the NDC diode using various doping concentrations of Ni (0, 2, 4, and 6 wt%). X-ray diffraction revealed polycrystalline film formation with a cubic crystal structure and the crystallite size of CeO2 was increased from 10 to 21 nm on Ni doping. EDX study confirms the presence of Ni in NDC films. FESEM explicitly shows fine spherical grains-like morphology. The optical studies indicate the reduction in the bandgap of CeO2 from 3.30 to 2.86 eV on Ni doping. The Photoluminescence (PL) spectrum proves that the oxygen vacancy is created in the CeO2 thin films while doping with Ni which leads to the blue shift and intensity enhancement of emission peak. NDC film prepared with 6 wt% showed a higher electrical conductivity ~ 3.76 × 10–10 S/cm which indicates that it is suitable for photodiode fabrication. The fabricated p-Si/n-NDC photodiode works with superior parameters like ideality factor (n) and barrier height (ΦB) under dark and illuminated conditions. The saturation current (Io) of the p-Si/n-NDC diode is varied from ~ 2.69 × 10–05 to 6.57 × 10–04 A with Ni concentrations. The estimated n and ΦB values of the p-Si/n-NDC junction diode are found to be decreased from 7.6 to 2.5 and 0.72 to 0.60 eV. These outcomes indicate that the fabricated photodiode is a useful element in optoelectronic devices. [ABSTRACT FROM AUTHOR]

In the proposed work, the thin films have been effectively synthesized by doping the post-transition metal with rare earth metal (In-Yb2O3) on a large scale using a low-cost jet nebulizer spray pyrolysis technique at different indium (In) doping concentration (0, 1.5, 2.5, 3.5, and 4.5 wt %) with optimized substrate temperature 550 °C. The structural, morphological and opto-electrical properties are investigated using various characterization techniques. Here, the high-quality single-phase cubic structure film was observed by X-ray diffraction (XRD) analysis. The field emission scanning electron microscope (FESEM) image reveals the change in morphology with indium (In) concentration in Yb2O3 thin films. The elemental composition study approves the presence of Yb, In and O. The transmittance, optical indirect energy gap of In-Yb2O3 films have been analyzed by UV–Vis spectra. DC electrical analysis records an improved conductivity and reduced average activation energy for higher doping content of In-Yb2O3 thin films. Notably, all the diodes shows positive photo conducting properties. Specifically, when the Al/In-Yb2O3/p-Si Schottky barrier diode fabricated with higher doping concentration such as 4.5 wt. % produces the minimum ideality factor (1.791), maximum barrier height (0.692 eV) and higher photosensitive diodes. [ABSTRACT FROM AUTHOR]

Nebulizer spray pyrolysis (NSP) technique has been successfully employed for the deposition of well-dispersed highly homogeneous spindle-shaped yttrium-doped cerium oxide (YDC) films. Optical studies revealed a decreasing trend of transmittance with the increasing Y doping percentage up to 20% and then increase in transmittance at 25% either due to the increased crystal defect induced photon scattering or the increased metal-to-oxygen ratio at higher Y doping. PL spectra showed four distinct broad peaks at 3.34 eV (near-band-edge emission (NBE) at UV), and 3.14, 2.91 and 2.65 eV (deep-level emission (DLE) in the visible spectra at violet, blue and green, respectively) corresponding to the wavelengths 365, 394, 425 and 465 nm, respectively. XRD studies confirmed the polycrystalline cubic fluorite single-phase structures preferentially orientated along (200) and (111) reflections without any impurity peaks. SEM images showed that YDC films are grown with small granules containing spherical-shaped particles having many cracks and patches. The average width of tiny granules inside the well-aligned taper-like structures is found within the order of 138 nm. The observed changes in the rectification ratio of p-Si/n-YDC diode with voltage are allied to the corresponding changes in both series (Rs) and shunt resistances (Rsh) of the heterojunction. The transient photocurrent characteristics indicate that the prepared heterostructure is highly stable and has quick response, which advocates the use of prepared heterojunction device in UV detector and white light photodetector applications. [ABSTRACT FROM AUTHOR]

The advancement of p–n photodiode fabrication employing rare-earth materials has created cogent interest in the field of semiconductor device technology. We report on the formation of pure and Sn-doped CeO2 thin films assembled through spray pyrolysis technique to enhance the p-Si/n-Sn:CeO2 diode performance. A polycrystalline nature of cubical crystal structured Sn-CeO2 thin films was developed on glass slides with various doping levels of tin (0, 2, 4 and 6 wt%). The crystallite size was found to decline with increasing Sn wt%. A uniform surface with tiny spherical-like crystallite grains was observed through the FE-SEM microscope. The existence of Sn ions with the CeO2 system was confirmed by the EDX and XPS spectrum. The effect of Sn doping on the optical absorption and band gap of CeO2 was evaluated, in which the 2 wt% Sn exhibited lower Eg value with maximum absorption. The Sn ions enhanced the electrical conductivity suggesting the semiconducting nature of the films. The p-Si/n-Sn:CeO2 diode was fabricated, and its performance was analyzed under dark and light intensity of 100 mW/cm2. The photosensitivity of the device varied from 17.11 to 671.65%. The ON–OFF photoresponse of 6 wt% Sn is relatively higher than that of pure CeO2. [ABSTRACT FROM AUTHOR]

The WO3 thin films and p-Si/n-Ni@WO3 junction diodes are prepared with different wt% of Ni. The XRD profiles confirm that the monoclinic crystal system with a preferential orientation of (0 2 0) plane, in which their crystallite size is reduced from 28 to 14 nm with the rise of Ni content in WO3. From SEM images, the randomly arranged plate-like grain structure was observed for grown films and grain size reduces with an increase in Ni dopant concentration. The expected elements of Ni, W, and O are confirmed by the EDX spectrum and their ratio of composition was obtained. The UV–Vis-NIR spectra reveal that the 4 wt% of Ni@WO3 film exhibits a higher transmittance (~ 80%) with a low bandgap (Eg = 2.84 eV) value. The d.c. electrical conductivity increased with an increase in temperature for each Ni-doped WO3 films. The device ideality factor (n) and barrier height (ΦB) values were found to be decreased with a rise in Ni doping concentration. The better performance of the fabricated diode is observed p-Si/n-4 wt% of Ni@WO3 heterojunction diode with n = 1.820 and ΦB = 0.759 eV values. The obtained results suggest that the p-Si/n-Ni@WO3 diode is more suitable for optoelectronic device applications. [ABSTRACT FROM AUTHOR]

In this work, we report a p-Si/n-CeO2 junction diode fabricated by a cost-effective and large-area deposition technique of jet nebulizer spray pyrolysis. The n-CeO2 layer was coated on four different substrate temperatures (Tsub) 350, 400, 450, 500 °C and their properties were studied by various techniques like XRD, FE-SEM with EDX, UV–Vis and I–V characterization. XRD pattern confirmed a cubic fluorite crystalline phase of CeO2 thin films with preferential growth along (2 0 0) direction. A smooth surface with inter-connected smaller grains was recorded by FE-SEM micrographs and also the existing elements Ce and O have been confirmed. For Tsub of 450 °C, an exceptional optical absorption with smaller band energy of 3.3 eV was recorded in the UV–Vis spectrum. The electrical conductivity results indicated that all the films are semiconducting in nature. I–V characteristics of all the fabricated diode showed better rectification in dark with excellent photovoltaic characteristics under light exposed condition. The photosensitvity of the diode varied from 21.94 to 1093.75% with substrate temperature. Our results strongly suggested that rare-earth based p-Si/n-CeO2 diodes are suitable for future applications in ultraviolet photo-detector and photo-diode. [ABSTRACT FROM AUTHOR]

Octahedral indium oxide thin films with different precursor concentrations of 0.05, 0.075, 0.1 and 0.125 M were coated on glass substrates at 450 °C using jet nebulizer spray pyrolysis technique. Surface morphology of the prepared samples showed closely packed octahedrons for all concentrations. The measured root-mean-square value of the films was varied between 40.45 and 188.98 nm with increased precursor concentrations. From optical analysis, the calculated optical band gap was continuously decreased with increase in precursor concentrations. A slight blue shift was recorded through the PL spectrum while increasing the precursor concentration due to the oxygen vacancies. The nature of electrical conductivity of the In2O3 films was analysed. Interestingly, we have calculated two types of activation energies in the In2O3 films one is corresponding to low temperature and another is higher temperature. Further, p-Si/n-In2O3 junction diodes are fabricated with different precursor concentrations. Particularly, the 0.075 M of p-Si/n-In2O3 junction diode recorded a minimum ideality factor of n = 2.64 under light exposed condition, confirming the photo-conducting nature of the diodes in visible wavelength range. [ABSTRACT FROM AUTHOR]

The influence of nickel (Ni) doping concentrations on structural, optical, electrical and diode properties of molybdenum trioxide (MoO3) thin films has been studied systematically. Ni-doped MoO3 films and diodes were prepared for various doping concentrations of Ni such as 0, 3, 6 and 9 wt.% by jet nebulizer spray (JNS) pyrolysis technique. The structural properties of Ni-doped MoO3 films were analyzed by X-ray diffraction (XRD) pattern and scanning electron microscopy (SEM). The prepared films were exhibited in the orthorhombic crystal structure and sub-microsized plate-like surface morphology. The energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the presence of Ni, Mo and O elements in the prepared films. Ultraviolet–visible (UV–vis) analysis results showed that the absorbance decreases with the increasing of Ni doping concentration and the minimum band gap energy (Eg = 2.25) was obtained for 9 wt.% Ni-doped MoO3 film. From current–voltage (I–V) characterization, the conductivity is increased by increasing the Ni doping concentration in MoO3 thin films. The diode measurements were performed in darkness and under light illumination of a halogen lamp. The methods of I–V, Cheung's and Norde were used to calculate the diode parameters of ideality factor (n), barrier height (Φb) and sheet resistance (Rs). Also, the light ON/OFF switching response of the fabricated n-NiMoO3/p-Si diodes was analyzed. [ABSTRACT FROM AUTHOR]

Inter-connected network grains of tungsten trioxide (WO3) thin films were deposited on glass using a jet nebulizer spray pyrolysis (JNSP) technique by varying the substrate temperature at 350, 400, 450 and 500 °C. Phase transformation (monoclinic to orthorhombic) was observed during the film growth through X-ray diffraction (XRD) analysis. Field emission scanning electron microscope (FE-SEM) images revealed a better grain growth with smooth surface for 400 °C. The WO3 film deposited at 400 °C exhibits minimum band gap and maximum optical conductivity of 3.2 eV and 5.8 × 1014 (Ω.cm)−1. From the current-voltage (I–V) characteristics, the mean electrical conductivity is found to increase gradually and the activation energy reduced at higher substrate temperature. Cu/WO3/p–Si structured Schottky barrier diodes (SBDs) have been fabricated with different substrate temperature and it was tested under variable device temperatures ranging from 30 to 170 °C. The experimental results of all SBDs indicated a linear reduction in the ideality factor (n) with a small increment in effective barrier height (ΦB) with increase in device temperature, which is due to lateral inhomogeneity's at the interface. Moreover, the minimum n value of 2.89 and their corresponding ΦB of 0.71 eV were recorded for device temperature at 170 °C. Compared with other SBDs, the device fabricated at 400 °C demonstrated a better thermal stability and device performance. [ABSTRACT FROM AUTHOR]

In this paper, we report the influence of thermal annealing on structural, electrical properties V2O5 thin films and their application of SBD's. V2O5 thin films were prepared using glass substrate by sol gel spin coating technique. Films were annealed at different temperatures such as 300 °C, 400 °C and 500 °C. The prepared films were introduced as an interfacial layer between metal and semiconductor interface. V2O5 films exhibit single phase tetragonal structure and surface morphology interestingly, it was changed into nanorod-like structure at higher annealing temperature which was observed through field emission scanning electron microscopy. Atomic force microscopy reveals the surface roughness and the mentioned roughness is increasing due to the increase of annealing temperature. The elemental composition was confirmed by energy dispersive X-ray spectrum. From UV–Vis absorption spectroscopy results revealed that the band gap shows a decreasing trend on increasing the annealing temperature. Besides, we analyzed the influence of high quality vanadium pentoxide (V2O5) thin films prepared at different annealed temperatures and act as an interfacial layer between metal and semiconductor in the fabrication of Schottky diode. V2O5 films depicts high electrical conductivity (σdc) of 0.945 (S cm−1) with activation energy of 0.0747 eV (Ea) as a function of temperature. The MIS structured Cu/V2O5/n-Si based SBD's diode performance was analyzed for different temperatures ranging from 30 to 150 °C. V2O5 thin-film act as an interfacial layer on Cu/V2O5/n-Si Schottky diode was successfully explained by the thermionic emission theory. [ABSTRACT FROM AUTHOR]

Tungsten disulfide (WS2) thin films were deposited on the glass substrate by varying its temperature from 350 to 500 °C using jet nebulizer spray pyrolysis (JNSP) technique. The WS2 thin films were characterized through various techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), Energy dispersive X-ray analysis (EDX), UV-Visible spectroscopy (UV), photoluminescence (PL), Hall measurements and current-voltage (I-V) characteristics. XRD pattern revealed that the prepared WS2 films are polycrystalline in nature with rhombohedral and hexagonal crystal structures. The average crystallite size of WS2 thin films changed from 52.23 to 47.40 nm. SEM images showed the uniform grain size, which is agglomerated at the higher substrate temperature. The presence of elements like W and S was confirmed through EDX spectrum. From UV analysis, the minimum optical band gap and maximum absorption was obtained for the film deposited at 450 °C. The WS2 thin films exhibited an n-type semiconductor nature with the carrier concentration of 1014 cm−3, which was demonstrated through hall measurements. Also, the electrical resistivity of the WS2 films varied from 3.26 × 105 to 1.59 × 107 Ω cm. The p-Si/n-WS2 junction diode was fabricated with various substrate temperature of (350-500 °C). Junction diode parameters like ideality factor (n), barrier height (ϕB) and reverse saturation current (Io) values were calculated and interpreted based on the thermionic emission theory model. [ABSTRACT FROM AUTHOR]

In this work, two different structure of Cu/Sr-WO 3 /p-Si metal-insulator-semiconductor (MIS) and Cu/Sr-WO 3 /FTO metal-insulator-metal (MIM) Schottky barrier diodes (SBDs) fabricated with an insulating layer of pure tungsten trioxide (WO 3 ) and Sr-WO 3 thin films have been reported. The Sr-WO 3 layer was coated separately, with different concentrations (0, 4, 8 and 12 wt %) of strontium (Sr) via jet nebulizer spray pyrolysis technique (JNSP) on the p-type silica wafer (p-Si) and fluorine doped tin oxide (FTO) substrates which are been optimized at 400 °C. The XRD analysis reveals the multiphase crystalline structures for 12 wt % of Sr-WO 3 film with higher average crystallite size. FE-SEM images show the randomly oriented sub-microsized slab and seashell like structures. Higher surface roughness with improved grain size for 12 wt % of Sr-WO 3 film. The presence of W, O and Sr atoms was confirmed by EDX spectra. In optical studies, Maximum absorption with minimum optical band gap was observed for 12 wt % of Sr-WO 3 composite film. There was a linear increase in the electrical conductivity of the films with higher wt. % of Sr. Evidently the activation energy decreased with Sr concentration which is in accordance with the bandgap values. The fitting results of the measured I-V, reveal that MIS (SBDs) under illumination condition have minimum ideality factor (n = 2.39) and maximum barrier height (Φ b  = 0.57) values for higher concentration (12 wt %) of Sr film compared to MIM SBDs. [ABSTRACT FROM AUTHOR]

[Display omitted] • For the first time, facile spin coating technique is employed to fabricate Ga doped novel WO 3 films and n-Ga@WO 3 /p-Si heterojunction diode by keeping their optoelectronic applications point of view. • X-ray diffraction study reveals the orthorhombic structure of WO 3 at all Ga contents and also Ga presence was approved. • EDX study confirm the presence of Ga in WO 3 films. • SEM study shows that the morphology of WO 3 is remarkably transformed from nanoplates to fine nano-leaves with some agglomeration when Ga is doped. • Enhancement in electrical conductivity was observed with temperature as well as with Ga doping content. • Robust electrical properties of the devices were studied. • Outcomes indicates that the developed thin films and heterojunction device is quite impressive for optoelectronic applications. Hence author hope that it will a great addition to the literature for scientists and optoelectronic industries. In this work, we have fabricated the gallium doped tungsten trioxide (Ga@WO 3) films and n-Ga@WO 3 /p-Si diodes by taking various concentrations (0, 3, 6, 9, and 12 wt%) of Ga through the spin-coating method. To analyze the impact of Ga-dopant on the physical properties of WO 3 films, XRD, SEM, and robust dc electrical analyses have been used. From the XRD analysis, compared to the lower concentration of Ga dopant, the higher dopant concentrations show the presence of Ga on the o-GaWO 3 crystal structure. The nanoplates-like surface morphology was detected by SEM analysis. The temperature-dependent dc conductivity was studied by I-V characterization, and 12 wt% of Ga doped WO 3 thin film exhibits a higher conductivity value and low activation energy (E a) at room temperature. The J-V nature signifies that n-WO 3 /p-Si diode performance was enhanced using Ga dopant concentration. The diode constraints ideality factor (n) and barrier height (Φ B) values were determined from J-V, Cheung's, and Norde's functions. From J-V-T & Richardson plot (ln (J 0 /T2)), we obtain that the Φ B values were decreased with decreasing temperature. This is explained through the mechanism of thermionic emission with Φ B Gaussian distribution. The determined parameters of the fabricated films and junction diode signify that these can be employed in the applications of photodetectors and solar cells. [ABSTRACT FROM AUTHOR]

Novel nanostructure formations like core-shell influence the sensing nature of the optoelectronic devices. In this report, transition metal oxides (TMOs) and transition metal dichalcogens (TMDCs) based sensing layer fabrication and their influence in photo sensing performances were analysed. The metastable h-MoO 3 , thermally stable α-MoO 3 , as synthesized MoS 2 and combinational MoO 3 @MoS 2 core@shell nanocomposites are synthesized by co-precipitation method. Phase purity of synthesized particles was analysed with XRD. Vibration modes of the samples were confirmed with Raman spectroscopy. The morphology behaviours of MoO 3 in different polymorphs due to annealing temperature namely prismatic like h-MoO 3 , layered rod like α-MoO 3 and sphere like MoS 2 decorated core@shell MoO 3 @MoS 2 were observed in the FE-SEM micrographs. The core@shell rod like structured was recorded with HRTEM. Further construction of photodiodes such as n-(h-MoO 3)/p-Si, n-(α-MoO 3)/p-Si, n-MoS 2 /p-Si and n-MoO 3 @MoS 2 /p-Si by employing solution processed method with pre-synthesized particles were discussed in detail. The current-voltage (I–V) characteristics and photo sensing parameters of detector are compared. From the experimental result, n-MoO 3 @MoS 2 /p-Si has better photosensitivity (P S) of 21678.6 (%) and the specific detectivity (D*) of 5.813 × 1010 Jones. [Display omitted] • Novel n-MoO 3 @MoS 2 /p-Si heterostructure diode has been facilely developed. • Structural and vibrational studied confirm the fabrication of n-MoO 3 @MoS 2 system. • MoS 2 decorated core@shell MoO 3 @MoS 2 was observed in the FE-SEM micrographs and core@shell rod like structured were recorded with HRTEM. • The development of photodiodes such as n-(h-MoO 3)/p-Si, n-(α-MoO 3)/p-Si,n-MoS 2 /p-Si and n-MoO 3 @MoS 2 /p-Si has been done. • n-MoO 3 @MoS 2 /p-Si shows (P S) of 18659 (%) and the (D*) of 5.813 × 1010 Jones. [ABSTRACT FROM AUTHOR]

We report a novel highly sensitive and pseudocapacitive transparent nickel oxide (NiO) thin film based electrode material fabricated on a conductive glass substrate using a facile binderless electrodeposition process. Effect of the incorporation of Mo-dopant ion on some surface structural and electrochemical properties of the electrode was examined for high performance optoelectronic and charge storage potentials. The material showed some uniqueness in some microstructural features and enhanced degree of crystallinity, suitable for charge extraction and transport with Mo doping. The deposited NiO film demonstrated red shift in band structure by exhibiting optical band gap narrowing from 3.88 to 3.61 eV with increasing Mo content. The degree of disorder as revealed from Urbach response of NiO film was found varying with Mo-content. The material also exhibited enhanced Ni2+ electronic transition states with increasing Mo content which quenched at a critical dopant concentration of 2.4 %. The fabricated NiO thin film electrode showed increased supercapacitive specific capacitance and areal capacity up to a peak value of 1412 Fg−1 and 101 mAh m−2 for 3 % Mo dopant content at 5 mVs−1 scan rate and 0.5 mA cm−2, respectively, but returned diminished at higher dopant content. Excellent cycling stability at ∼ 85 % after 5000 cycles, was also exhibited. Impedance spectroscopic features of Mo-doped NiO electrode indicated fast electrolytic ion transfer response with high rate charge storage capability. The study presents successful fabrication of Mo-modified NiO nanostructured electrode film and demonstrated the influence of Mo impurity on tailoring the properties of NiO host film as suitable electrode in high performance photocatalytic and supercapacitor devices. • Novel Pseudocapacitive Mo doped NiO Thin Film Electrode has been developed from simple two-electrode electrofabrication process • Microstructural studies revealed stoichiometric bunsenite NiO rock salt with fcc crystal structure. • Comparative electrochemical properties of NiO and Mo-doped Mo x O films as supercapacitive electrodes were examined. • The film demonstrated highly stable pseudocapacitive response with improved specific capacitance of 1412 Fg−1 and areal capacity of 101 mAh m−2 at 3% volume Mo dopant content. • The study showed that supercapacitive and photocatalytic properties of NiO thin electrode can be tailored by simply introducing Mo dopant impurity. [ABSTRACT FROM AUTHOR]

We report the fabrication of nanocystalline MnO 2 thin film-based electrode on a predeposited indium tin oxide (ITO) film on the glass substrate, using a binderless and simple two-electrode electrofabrication approach. Effects of Co and Cu incorporation on microstructural and electrochemical performance of the electrode were optimally and extensively investigated. The experimental results for the optimum fabrication conditions for Co@MnO 2 and Cu@MnO 2 and pure MnO 2 thin film-based electrode samples showed uniqueness in microstructural features, degrees of crystallinity and roughness, and high electrochemical energy storage performance. Co@MnO 2 film electrode exhibited remarkable specific capacitance (1068 Fg-1) and areal capacity (25.78 mAh cm−2) as against other electrode films (Cu@MnO 2 and pure MnO 2) which exhibited specific capacitances 837 and 438 F g−1 and areal capacities 10.6 and 4.9 mAh cm−2, respectively. Exceptional stabilities were also recorded for the composite samples (87.2% and 84.4% for Cu@MnO 2 and Co@MnO 2 thin film electrodes, respectively) against the pure MnO 2 film electrode sample (77.8%), after 2000 cycles. In addition, the short time constants (1.27 s and 1.31 s) were respectively realized for the fabricated Co@MnO 2 and Cu@MnO 2 electrode films as against the pure MnO 2 electrodes (4.35 s). These features observed in the composite electrode samples demonstrated an exhibition of faster ion response and higher rate capability by the samples. Moreover, the incorporation of Co into the MnO 2 electrode material relatively improved the supercapacitive activeness by enhancing the charge transition and transport. [ABSTRACT FROM AUTHOR]

[Display omitted] • A nanostructured Zn@HfO 2 thin films were through the JNSP technique. • The mesoporous with irregular balls intact nanorods-like structured morphology was observed by FESEM images. • The band gap values are receded continuously after doping. • We have fabricated Al/Zn@HfO 2 /n-Si diode for various Zn concentration. • A minimum ideality factor was obtained for 15 wt% of MIS diode. In this work, we have prepared the nanorods are intact with mesoporous of Zn@HfO 2 thin films through the JNSP technique with different concentrations of Zn (5,10,15 Wt%) to improve the MIS Schottky diode Al/Zn-HfO 2 /n-Si performance. The XRD was used to determine the structural parameters such as the phase and grain size for both pure HfO 2 and Zn@HfO 2 composite films. The mesoporous with irregular balls and nano rod-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy were calculated from the UV–vis spectrum. The EDAX analysis has confirmed that the Zn, Hf and O percentages in both films. The XPS spectrum has confirmed Zn's presence and binding natural with a spin-orbit splitting on the films' surface. By the thermionic emission theory, I-V curves of forward and reverse bias are used to determine the barrier height, ideality factor and saturation currents. All the Al/Zn@HfO 2 /n-Si diode parameters are strongly improved after the incorporation of Zn ions. [ABSTRACT FROM AUTHOR]

[Display omitted] • Cu-Yb 2 O 3 thin films have been effectively coated with different Cu doping concentrations. • A polycrystalline with a cubic phase was obtained via JNSP route. • The UV–visible analysis indicates minimum E g and maximum σ opt of 3.14 eV and 8.67 × 1013 Ω·cm−1 • The electrical characteristics of the fabricated MIS SBDs with various Cu doped Yb 2 O 3 interface layers were investigated. • The maximum Φ B and minimum n values were obtained for 4,5 wt% of MIS diode. In the present work, transition metal doped rare earth metal oxide (Cu-Yb 2 O 3) thin films have been effectively synthesized on a large scale using low-cost jet nebulizer spray pyrolysis (JNSP) route at different copper (Cu) doping concentrations (0, 1.5, 2.5, 3.5, and 4.5 wt%) with optimized substrate temperature of 550 °C. The structural, morphological and opto-electrical properties were investigated using various characterization techniques. The X-ray diffraction (XRD) profile indicates the polycrystalline nature of all the deposited films with a cubic phase and the size of crystallites is found to increase from 11 to 31 nm. The field emission scanning electron microscope (FESEM) images reveal that the Cu doping has significant impact on the surface morphology of Cu-Yb 2 O 3 films. The atomic force microscope (AFM) analysis exposed higher roughness value for 4.5 wt% of Cu-Yb 2 O 3 films. The elemental composition study approves the presence of Yb, Cu and O in the film. The transmittance and indirect optical energy gap of Cu-Yb 2 O 3 films have been analyzed by UV–Visible spectroscopy which established the systematic band gap reduction of Yb 2 O 3 thin films from 3.68 to 3.14 eV with increasing Cu concentrations. The DC electrical studies showed a maximum conductivity and minimum average activation energy for 4.5 wt% of Cu-Yb 2 O 3 film. The electrical characteristics of the fabricated Al/Cu-Yb 2 O 3 /p-Si Schottky diode was investigated using current–voltage (I-V) measurements performed under dark and light conditions. The Φ B (0.911 eV in dark & 0.754 eV in illumination) and minimum n values (2.120 in dark and 1.757 in illuminations) were obtained for MIS diode having Cu doping concentration of 4.5 wt% in Yb 2 O 3. [ABSTRACT FROM AUTHOR]

We report an inorganic aqueous solution route for pure molybdenum trioxide (MoO 3) and zirconium oxide composite (MoO 3 -ZrO 2) insulating layer of Cu/MoO 3 -ZrO 2 /p-Si metal-insulator-semiconductor structured Schottky barrier diodes. These composite films were coated by Jet Nebulizer Spray Pyrolysis techniques with a substrate temperature of 500 °C and analyzed using X-ray diffraction, Field emission scanning electron microscope, DC electrical conductivity and I–V characterization. These MoO 3 -ZrO 2 films exhibited different crystal structures. Field emission scanning electron microscopes images displayed plate-like structure with improved grain size. The presence of Zr, Mo and O atoms were confirmed by energy dispersive x-ray spectrum. Optical studies shows the maximum absorption and higher optical badgap for (15 wt%) of Zr in MoO 3. DC electrical studies recorded the maximum activation energy with minimum conductivity for Zr based composite films. Current - Voltage measurements were analyzed in both dark and illuminated conditions for Cu/MoO 3 -ZrO 2 /p-Si Schottky Barrier diodes. Minimum ideality factor (2.98) and maximum barrier height (0.664 eV) was obtained for 15 wt% of Zr composite thin films. [ABSTRACT FROM AUTHOR]

Metal-insulator-semiconductor (MIS) structured Schottky barrier diodes (SBDs) are the most significant device in optoelectronic device application. Here, we demonstrated a highly rectifying SBDs using a thin interfacial layer among p-type silicon (p-Si) and metal (Cu) junction. These composite films are coated with different concentrations of Ba (0, 5, 10 and 15 wt%) using jet nebulizer spray pyrolysis (JNSP) technique with an optimized substrate temperature of 500 °C. A significant reduction of reverse saturation (Io) current was obtained on introducing the Ba–MoO 3 composite films in between Cu/p-Si interface. X-ray diffraction (XRD) pattern revealed the monoclinic crystalline phases of Ba–MoO 3 thin films along with improved grain size. Field emission scanning electron microscope (FE-SEM) images of the prepared thin films displayed a plate-like structure, which on increasing the Ba concentration transforms into a flag-like structure. The presence of constituent elements like O, Mo, Ba were confirmed by energy dispersive analysis X-Ray (EDAX) spectrum. The atomic force microscopy (AFM), exposed a smoother surface and an improved surface roughness of the film while varying the Ba concentration. Band gap energy of the Ba–MoO 3 films are found to increase after adding the Ba content. The electrical conductivity decreased with increasing Ba concentration of Ba–MoO 3 films corresponding activation energy is increased. All the fabricated Cu/Ba–MoO 3 /p-Si diodes show positive photoconducting nature, in which the ideality factor of the diode decreases gradually with Ba concentration. Hence 15 wt% of Ba shows better device performance relatively with other diodes. Image 1 • Highly rectifying Cu/Ba–MoO 3 /p-Si structured Schottky barrier diodes has been fabricated through low cost jet nebulizer spray pyrolysis technique. • The phase changes was observed (orthorombic to monoclinic) while increasing Ba concentration. • Remarkably, the plate-like and flower-like sufface morphology was revealed by FE-SEM. • Cu/Ba–MoO 3 /p-Si diode fabricated with 15 exposes a lower n = 1.92 values under light condition. • The Cu/Ba–MoO 3 /p-Si diodes highly appropriate for UV photodetector application. [ABSTRACT FROM AUTHOR]

• Novel Pseudocapacitive Zn doped CuO Thin Film Electrode with enhanced supercapacitive performance was electrofabricated using simple two-electrode. • Microstructural studies revealed polycrystalline Cu x O structure which contains the appearance of mixed phases of both Cu 2 O and CuO. • Comparative electrochemical properties of CuxO and Zn-doped Cu x O films as supercapacitive electrodes were examined. • Highly stable pseudocapacitive response with improved specific capacitance of 263 Fg−1 and areal capacity of 5.83 mAh cm−2 at 1% vol. Zn dopant content was established. • The study demonstrates successful incorporation of Zn ion in Cu x O lattice structure with improved supercapacitive and photocatalytic properties. [Display omitted] We report the consequence of Zn doping on some surface and electrochemical characteristics of Cu x O nanostructured film, obtained via a facile and cost effective two electrode electrochemistry. Impact of Zn dopant on photoabsorption and supercapacitive responses of Cu x O thin film electrode was examined. Microstructural studies revealed anisotropic growth of monoclinic and cubic Cu x O crystals featuring alternate arrangements of O and Cu ions. Some structural properties of Zn-doped Cu x O film were also found varying with Zn content. Cu x O film exhibited red shift in its band structure and its optical energy band gap consequently declined from 2.62 to 2.20 eV with increasing Zn dopant. Zn-doped Cu x O film also demonstrated highly stable pseudocapacitive response with improved specific capacitance of 263 F g−1 and areal capacity of 5.83 mA h cm−2. Lower series and charge transfer resistances as well as huge ohmic resistivity drop were also observed in the Cu x O electrode with Zn dopant, indicating better ionic conductivity and charge storage capability. The study demonstrates successful incorporation of Zn ion in Cu x O lattice structure and showed that supercapacitive and photocatalytic properties of Cu x O thin electrode can be tailored by simply introducing Zn dopant impurity. [ABSTRACT FROM AUTHOR]

[Display omitted] • Novel Y@CdS photodetectors were developed via facile spray pyrolysis technique. • XRD & FT-Raman analyses confirm the hexagonal phase of CdS at all Y contents. • Optical band gap of films were found in range of 2.38–2.42 eV. • A noticeable enhancement in responsivity (R) and external quantum efficiency (EQE) was noticed with 3 wt. % Y doping. • Developed photodetector with 3 wt.% Y@CdS will be highly useful in optoelectronics. Visible-light photodetectors are in great demand in current scenario for advanced optoelectronic devices. Hence, in current work we have fabricated the photodetectors based on Cadmium Sulfide (CdS) thin films with different contents of Yttrium (Y) doping. Hexagonal phase confirmation of the fabricated films was confirmed by X-ray diffraction and FT-Raman spectroscopy analyses. The crystallite size of grown films was determined and found within the range of 33 nm. Scanning electron microscopy was carried out to analyse the surface morphology of the films and reveals nanograins formation on the surface. Optical absorption/transmission/reflectance spectra were recorded up to near-infrared region and optical energy gap was estimated including several other optical parameters. PL spectra were recorded and an intense emission was observed at 542 ± 12 nm when excited at 350 and 450 nm both. The electrical characteristics were explored under dark and light conditions. The highest photoelectrical resistivity and sensitivity were observed for 5.0 wt.% which are around ∼9.45 × 107 Ω−1 and 55.07 % at 0.5 mW/cm2. However, the highest responsivity, external quantum efficiency and detectivity was observed for 3.0 wt.% and noticed around 0.83 A/W, 193.82 % and 4.28 × 1011 Jones, respectively. Outcomes reveal that the Y doping enhances the CdS photodetection nature. [ABSTRACT FROM AUTHOR]

In this study, rare earth ytterbium (Yb)-doped V 2 O 5 thin films were effectively coated on glass and Si substrates by the sol-gel method combined with the spin coating method. The films' structural, morphological, optical, and electrical properties were investigated through XRD, FESEM, UV-Vis, and I-V electrical conductivity. Doping on V 2 O 5 with low Yb content of 2, 4, and 6 ​wt % have highly affected the lattice, which is shown in tetragonal and orthorhombic structures. Morphological studies show nanorods like structured. The coated thin films yield bandgap of 3.23–3.31 ​eV. The electrical properties of Cu/Yb@V 2 O 5 /n-Si type Schottky barrier diode were studied, and calculated photodiode parameters like photosensitivity, photo-responsivity, external quantum efficiency, and detectivity. Predominantly, high photosensitivity of 5545.70% is obtained for the diode with 2 ​wt % Yb@V 2 O 5. [Display omitted] • Cu/Yb@V 2 O 5 /n-Si structured diodes are successfully fabricated. • Development of Yb@V 2 O 5 led to an increase of barrier height. • Optimum barrier height of 0.93 ​eV is obtained owing to Yb. • Yb@V 2 O 5 interface layer drawn high quantum efficiency of 37.90%. • Remarkably, 2 ​wt% Yb@V 2 O 5 is obtained high photosensitivity of 5545.70 %. [ABSTRACT FROM AUTHOR]

[Display omitted] • A nanostructured MoS 2 thin films were prepared on glass substrate by JNSP technique. • The elongated irregular rod-like structures were revealed through FESEM. • The MoS 2 films deposited at 450 °C exhibit minimum band gap. • We have fabricated p-Si/n-MoS 2 junction diode for different substrate temperature. • A minimum ideality factor of 2.23 was obtained for 550 °C. Inorganic two-dimensional materials are gradually becoming resources for modern electronic device manufacturing. Fascinate of 2D transition metal dicholgonides (TMDs) are particularly high. TMDS are very great potential for their characteristics and band gap structure in optoelectronic devices. In TMDs, 2D MoS 2 is most researchable material due to its good performance and its adequacy of electronic and optoelectronic application. Here we demonstrate MoS 2 thin film for various temperature such as 400, 450, 500, 550 °C via Jet Nebulizer Spray Pyrolysis (JNSP) technique for PN diode application. XRD pattern revealed that the polycrystalline nature of MoS 2 films with hexagonal crystal structure. The elongated irregular rod-like structures were revealed through FESEM. Elemental confirmation studies of Mo and S were done through EDX. The MoS 2 films deposited at 550 °C exhibit minimum band gap. The average conductivity values were found to be increased from 1.730 × 10−8 to 3.877 × 10−7 S/cm with substrate temperature. A positive photo conducting-nature of p-Si/n-MoS 2 diode have been fabricated. Remarkably, the p-Si/n-MoS 2 diode fabricated at 550 °C revealed minimum n values of 2.23. [ABSTRACT FROM AUTHOR]

Co–Ni–Al is considered as a suitable ferromagnetic shape-memory alloy and has significant control over structural transformation temperature, magnetic parameters, and ductility. In this paper, the fabrication of Co–Ni–Al alloy thin films on Si (1 0 0) substrate was achieved via pulsed laser deposition (PLD) technique. The developed films annealing was done at 573, 673, and 773 K temperatures and inveterate their crystalline structure, phase analysis, and magnetic nature of the annealed Co 38 Ni 35 Al 27 films. X-ray diffraction analysis at 773 K annealing temperature reveals that, the Co 38 Ni 35 Al 27 film shows high crystallinity, and all annealed films have a body-centered cubic phase structure. The crystallite size estimated from Scherrer rule is noticed to increase from 10 to 22 nm when the annealing temperature raised to 773 K. From the SEM images, we infer that there is an increase in grain size when the annealing temperature increases and the grains shape looks spherical. The magnetic study of the samples shows that the film possesses highest magnetic saturation and lowest coercivity at 773 K annealing temperature. Also, the film annealed at 773 K exhibits a wide range of transformation temperatures and has a curie temperature of 180 K. Image 1 • Development of Co–Ni–Al/Si has been done through PLD technique. • Structural analysis approves the cubic phase of Co–Ni–Al thin films at all annealed temperatures. • FESEM analysis confirm very fine spherical grains surface morphology of grown films. • The deposited film annealed at 773 K reveals ferromagnetism with a wide range of transformation temperature. • A T c of 180 K, and larger magneto-crystalline anisotropy, makes it significant for micro-device applications. [ABSTRACT FROM AUTHOR]

Herein, the fabrication of novel pure and Zr-doped SnO 2 (Zr@SnO 2) films via sol-gel spin coating process for Schottky barrier diode (SBD) application has been reported. Phase and size analysis were carried out through X-ray diffraction and Scherrer rule was used to determine crystallite size, which is noticed between 2 and 6 nm. The SEM study reveals that the fabricated films contain very fine sphere-like grains. The optical transmittance of Zr@SnO 2 thin films reveals that the grown films possess high transmittance which is good for optoelectronics. The values of energy gap for all Zr@SnO 2 films were estimated between 3.90 and 3.96 eV. The dc conductivity analysis showed that SnO 2 films possess higher electrical conductivity at 8 wt% of Zr. The barrier heights (Φ B) and ideality factor (n) of the fabricated SBDs were calculated from both J-V and Cheung's method. Better performance was noticed for Zr (8 wt%):SnO 2 /p-Si SBD. [ABSTRACT FROM AUTHOR]

• Highly sensitive MIS type Schottky diode where fabricated with various concentration of Ce. • Incorporation of Ce ions effectively reduce the surface roughness value of the V 2 O 5 films. • The fabricated Cu/Ce-V 2 O 5 /n-Si Schottky diodes are showed superior performed in under light condition. • Diode fabricated with 6 wt.% achived achived a very highy photosensitivity of 96090.78 %. In the present work, we have fabricated a highly photo responsive Schottky barrier diode based on cerium infused vanadium pentoxide thin film (Ce-V 2 O 5) as a interfacial layer. It was coated on a glass slide by low-cost sol-gel spin-coating technique and annealed at 500 °C. Structure, surface morphology, optical and electrical characteristic of Ce infused V 2 O 5 films with different Ce concentrations viz 0, 2, 4 and 6 wt% were investigated. X-ray diffraction (XRD) pattern exposed that all coated films are tetragonal structure. And a peak shift was recorded after doping Ce ion into the V 2 O 5 system. FE-SEM images showed a smooth nanorods and nanoplate-like structures in nano-scale region. Topology view by AFM showed a significant decrease in surface roughness of the film at different wt.% of Ce. The incorporation of Ce concentration based on the optical absorbance and band gap energy were studied, using UV–vis spectroscopy. Current-voltage (I–V), characteristics, photo-diode parameters of the Cu/Ce-V 2 O 5 /n-Si diodes were evaluated under dark and light exposed conditions. A maximum quantum efficiency of 25.54 % was achieved for the MIS diode fabricated with 6 % of Ce. The photosensitivity of the Cu/Ce-V 2 O 5 /n-Si diode 100 times higher than pure diode. Photodiode parameters and I–V analysis revealed that Ce with 6 wt.% is appropriate for the development of high quality photodiode and photo detector applications based to its electrical-performance. [ABSTRACT FROM AUTHOR]

Schematic representation of the Cu/Nd-V 2 O 5 -nanorods/n-Si MIS structure SBD's. • Nd-V 2 O 5 films were utilized as an interfacial layer in MIS Schottky barrier diode. • Incorporation of Nd ions in V 2 O 5 matrix causes microstructural changes. • MIS diode fabricate with 6 wt% unveiled higher photo-sensitivity of 19,427.80%. In the present work, Nd (x) -V 2 O 5 -nanorods (x = 2, 4 and 6 wt%) thin films were prepared via a spin coating technique. X-ray diffraction analysis shows tetragonal phases for neodymium substituted films. The concern diffraction angle shifted to higher angle owing to substitution in vanadium that implies complete occupation in V 2 O 5 crystal lattice. FE-SEM images are flaunting one dimensional nano-rod formation. Conductivity analysis of fabricated diode at different temperature reveals their activation energies (E a) and these energies are high when rare earth interfaced diode in contrast to pure vanadium films. The essential current (I) and voltage (V) characteristics of junction diodes express nonlinear behaviour. The photodiode parameters like n, Ф B , I 0 , P s , R, QE and D* are calculated by dark and light condition. The photodiode performance under lighting condition is superior than dark. [ABSTRACT FROM AUTHOR]