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51. Opportunities and challenges of nanowire-based CMOS technologies

53. Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyond

58. Study of the piezoresistive properties of NMOS and PMOS Ω-gate SOI nanowire transistors: Scalability effects and high stress level

59. nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines

60. First demonstration of strained SiGe nanowires TFETs with ION beyond 700µA/µm

67. Real-time Soft-Error testing of 40nm SRAMs

80. Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model.

85. A Review of Sharp-Switching Band-Modulation Devices.

86. [Kaposi's disease (author's transl)].

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