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Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.

NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.

This presentation provides an overview of single event effects in FPGA devices 2014-2015 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing. Mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.

We report low-energy proton and low-energy alpha particle single-event effects (SEE) data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) latches and static random access memory (SRAM) that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 megaelectron-volt. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.

Radiation Hardness Assurance (RHA) is the process of ensuring space system performance in the presence of a space radiation environment. Herein, we present an updated NASA methodology for RHA focusing on content, deliverables and timeframes.

This is an independent study to determine the single event destructive and transient susceptibility of the Xilinx Virtex-5QV (SIRF) device. A framework for evaluating complex digital systems targeted for harsh radiation environments such as space is presented.

We report low-energy proton and alpha particle SEE data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) that demonstrates the criticality of understanding and using low-energy protons for SEE testing of highly-scaled technologies

While standards and guidelines for performing SEE testing have existed for several decades, guidance for developing SEE test plans has not been as easy to find. In this presentation, the variety of areas that need to be considered ranging from resource issues (funds, personnel, schedule) to extremely technical challenges (particle interaction and circuit application), shall be discussed. Note: we consider the approach outlined here as a "living" document: Mission-specific constraints and new technology related issues always need to be taken into account.

We present the results of single events effects (SEE) testing and analysis investigating the effects of radiation on electronics.

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors

We present a novel method of FPGA TID testing that measures propagation delay between flip-flops operating at maximum speed. Measurement is performed on-chip at-speed and provides a key design metric when building system-critical synchronous designs.

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices.

This report presents total ionizing dose evaluation data for the Linear Technology Corporation LTC1877 high efficiency monolithic synchronous step-down regulator. Data sheet parameters were tracked as a function of ionizing dose up to a total of 20 krad(SiO2). Control devices were also used.

This is a course on SEE Test Plan development. It is an introductory discussion of the items that go into planning an SEE test that should complement the SEE test methodology used. Material will only cover heavy ion SEE testing and not proton, LASER, or other though many of the discussed items may be applicable. While standards and guidelines for how-to perform single event effects (SEE) testing have existed almost since the first cyclotron testing, guidance on the development of SEE test plans has not been as easy to find. In this section of the short course, we attempt to rectify this lack. We consider the approach outlined here as a "living" document: mission specific constraints and new technology related issues always need to be taken into account. We note that we will use the term "test planning" in the context of those items being included in a test plan.

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Ultra-scaled complementary metal oxide semiconductor (CMOS) includes commercial foundry capabilities at and below the 65 nm technology node Radiation evaluations take place using standard products and test characterization vehicles (memories, logic/latch chains, etc.) NEPP focus is two-fold: (1) Conduct early radiation evaluations to ascertain viability for future NASA missions (i.e. leverage commercial technology development). (2) Uncover gaps in current testing methodologies and mechanism comprehension -- early risk mitigation.

We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS operational amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs. The SET cross-sections increase with increasing operating frequency. The LTC6400 exhibits a LET(sub th) < 7.4 MeV·sq cm/mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LET(sub th) < 4.4 MeV·sq cm/mg at 200 MHz; the LET(sub th) decreases with increasing frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz can erase several signal cycles. We al.so found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.