1,149 results on '"Wong, H.-S. Philip"'
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102. Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties
103. First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation
104. Does lithography still matter after high NA EUV?
105. Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS
106. Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 Transistor
107. Molybdenum oxide on carbon nanotube: Doping stability and correlation with work function.
108. How 2D semiconductors could extend Moore’s law
109. Synaptic Devices Based on Phase-Change Memory
110. Training and Inference in Hopfield Network Using 10 × 10 Phase Change Synaptic Array
111. Synergetic carbon nanotube growth
112. Nanoscale phase change memory arrays patterned by block copolymer directed self-assembly
113. CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories
114. Laser-induced patterning for a diffraction grating using the phase change material of Ge2Sb2Te5 (GST) as a spatial light modulator in X-ray optics: a proof of concept
115. Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs
116. Modeling the Impact of Body-to-body Leakage in Partially-Depleted SOI CMOS Technology
117. Electro-Thermal Confinement Enables Improved Superlattice Phase Change Memory
118. Carbon Nanotubes for Monolithic 3D ICs
119. Introduction to Nanoionic Elements for Information Technology
120. Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics
121. Sub-200 Ω·µm Alloyed Contacts to Synthetic Monolayer MoS2
122. Reduced HfO₂ Resistive Memory Variability by Inserting a Thin SnO₂ as Oxygen Stopping Layer
123. SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge
124. Understanding the switching mechanism of interfacial phase change memory.
125. Ultralow–switching current density multilevel phase-change memory on a flexible substrate
126. RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays
127. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2.
128. Carbon Nanotube and Graphene Device Physics
129. Carbon nanotube computer
130. Phase Change Memory
131. Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2
132. Improved Contacts to Synthetic Monolayer MoS2 – A Statistical Study
133. Effect of Top-Gate Dielectric Deposition on the Performance of Indium Tin Oxide Transistors
134. Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe2 P-Type Field-Effect Transistors
135. CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories.
136. Ultrathin Three-Monolayer Tunneling Memory Selectors
137. Novel contact structures for high mobility channel materials
138. Chapter 8 - Hyperdimensional computing nanosystem: in-memory computing using monolithic 3D integration of RRAM and CNFET
139. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2
140. Effect of parasitic resistance and capacitance on performance of InGaAs HEMT digital logic circuits
141. Measurement of subnanosecond delay through multiwall carbon-nanotube local interconnects in a CMOS integrated circuit
142. Layered Semiconducting 2D Materials for Future Transistor Applications
143. Design methods for misaligned and mispositioned carbon-nanotube immune circuits
144. Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory-experimental demonstration and analysis
145. Pinning-Free Edge Contact Monolayer MoS2 FET
146. An analytical derivation of the density of states, effective mass, and carrier density for achiral carbon nanotubes
147. A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application - part II: full device model and circuit performance benchmarking
148. A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application - part I: model of the intrinsic channel region
149. Schottky-barrier carbon nanotube field-effect transistor modeling
150. Metrics for performance benchmarking of nanoscale Si and Carbon nanotube FETs including device nonidealites
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