859 results on '"Crystals -- Growth"'
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302. Electron spin resonance studies in beta-FeSi2 crystals
303. Proton-implantation-induced nanosized Ge crystal formation in SiO2:GeO2 glasses
304. Homogeneity assessment of YBa2Cu3O(sub 7 - x) single crystals by cathodoluminescence microscopy
305. Thermal analysis of float-zone traveling solvent crystal growth of LaB6
306. Photoluminescence of chemically deposited CdSe nanocrystallites: effects of crystallite polydispersity
307. Probe card with probe pins grown by the vapor-liquid-solid (VLS) method
308. Carbon growth in diamond deposition on nickel studied in situ by soft x-ray emission spectroscopy
309. Effects of V/III ratio on ordering in GaInP: atomic scale mechanisms
310. Effect of surface free energy of underlayer materials on crystal growth of Co polycrystalline films
311. Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP
312. High-temperature (>90 degrees C) calcite precipitation at Waikite Hot Springs, North Island, New Zealand
313. Kinetics of transformation with nucleation and growth mechanism: two- and three-dimensional models
314. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
315. Method of fabricating a free-standing diamond single crystal using growth from the vapor phase
316. Study on the initial growth phase of chemical vapor deposited diamond on silicon(001) by synchrotron radiation
317. Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer
318. Formation mechanism of crystallites in the as-deposited mixed-phase low pressure chemical vapor deposition silicon thin films
319. Characterization of epitaxially grown Fe-N films by sputter beam method
320. Growth kinetics of ultrathin silicon dixode films formed by oxidation in a N2O ambient
321. Void formation during film growth: a molecular dynamics simulation study
322. A cell model to describe the spherulitic growth in semicrystalline polymers
323. Mechanisms of molecular beam epitaxial growth of (001) HgTe
324. Lactose solubility and crystal growth as affected by mineral impurities
325. A simple model for sector zoning in slowly grown crystals: implications for growth rate and lattice diffusion, with emphasis on accessory minerals in crustal rocks
326. Growth of epitaxial AlN(0001) on Si(111) by reactive magnetron sputter deposition
327. Growth and topography study of MnBi films
328. Origin of compositional modulation of InGaAs in selective area metalorganic vapor phase epitaxy
329. Scanning tunneling microscope investigation of the growth morphology of titanium silicide on Si(111) substrates
330. Composition dependence of nucleation and growth
331. Characterization of nucleation and growth
332. X-ray focusing optics using flat or bent crystals with two-dimensionally modulated surfaces
333. Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices
334. A numerical model for the calculation of the growth velocity of nonisothermal parabolic dendrites
335. Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates
336. Grown texture of thick sputtered films and multilayers assessed via synchrotron transmission Laue
337. Evidence for inhomogeneous growth rates in partially relaxed InGaAs/InP heterostructures
338. Interface fluctuations in Czochralski crystal growth
339. Atomic layer epitaxy
340. Pattern dependence in selective epitaxial Si(sub 1 - X)Ge(sub X) growth using reduced-pressure chemical vapor deposition
341. A monolithic nonlinear transmission line system for the experimental study of lattice solitons
342. The structure and crystallization of phase change optical disk material Ge1Sb2Te4
343. Modeling of O-18 tracer distribution during 'double oxidation' experiments for inward growing scales
344. Raman scattering from anisotropic LO-phonon-plasmon-coupled mode in n-type 4H- and 6H- and 6H-SiC
345. Epitaxial growth of CoSiO2 layer on (100)Si and facet formation at the CoSi/Si interface
346. Phosphorus-enhanced diffusion of antimony due to generation of self-interstitials
347. Annealing-environment effects in the epitaxial regrowth of ion-beam-amorphized layers on CaTiO3
348. Thermodynamic analysis of spherulitic growth in semicrystalline poly(ethylene oxide)
349. Initial interface formation study of the Mg/Si(111) system
350. Molecular-dynamics study of the synthesis and characterization of a fully dense, three-dimensional nanocrystalline material
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