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The asymmetrical propagation of the traveling normal zone under various test conditions is examined. The hall current distributions in the longitudinal area around the normal zone and their effects on the transient stability and important factors in the design of a large-scale aluminum stabilized superconductor are discussed.

The race-tract magnets using F1 Rutherford cable (Cu stabilized [Nb.sub.3]Al strands) are tested and their quench characteristics are studied. The advantages and disadvantages of these Rutherford cables containing [Nb.sub.3]Al strands re discussed.

The extent to which the matrix ratio can be reduced for the rapid-heating, quenching and transformation (RHQT) [Nb.sub.3]Al wires is discussed. The non-Cu [J.sub.c] is improved by about 20% by the reduction of the matrix ratio when compared to conventional [Nb.sub.3]Al wires.

The characteristics of the [Nb.sub.3]Al strand through the rapid heating/quenching and transformation (RHQT) process are described. The studies have shown that the copper stabilized RHQT-processed [Nb.sub.3]Al strands can be used for application in high field accelerator magnets at 4.2 K.

A low-matrix-ratio [Nb.sub.3]Al wire is fabricated and the effects of the rapid heating/quenching (RHQ) current and the area reduction (AR) after the RHQ process are studied. The studies have shown that the optimum RHQ current to obtain high [J.sub.c] is the current at the higher edge of the plateau region and the AR process has affected the transformation process that has determined the quality of the A-15 phase.

The design of a superconducting magnet for DC induction heating of aluminum billets is described. The feasibility of cooling by liquid helium bath is confirmed for both Nb-Ti and Mg[B.sub.2] superconductors.

In this article the two-dimensional electron gas in modulation-doped Al(sub 0.22)Ga(sub 0.78)N/GaN hetrostructures has been studied by means of magnetotransport measurement at low temperatures and high magnetic fields.

The transient spectral hole-burning experiments with the help of diode lasers in minute magnetic fields of < 16 mT are reported for the lower-energy 2E

Based on the measurements of specific heat and magnetization, the Er(super 3+)-doped yttrium aluminum garnet (YAG) has been shown as suitable for a magnetic refrigerant in adiabatic demagnetization refrigerators (ADRs) working at a temperature ~100 mK. The two important properties of YAG are the relation between the doping fraction of Er(super 3+) and the deltaS(sub M) value and the variation of heat conductivity with the doping fraction.

The active electric armor will play an important role in the future of armored vehicle protective systems. The active electric armor interceptor based on the principle of a single-stage coil launcher must use nonmagnetoconductive material, such as aluminum as its inductive coil. However, in order to enhance the interception effectiveness, people hope to use high-strength magnetoconductive material, such as steel. So, the best possible way is to synthesize the two kinds of materials in actual applications. In this paper, the electromagnetic field characteristics and the force acting on the interceptor are described. The analysis of the 3-D eddy current field shows that the thrust force not only did not decrease, but it increased a little when the high-strength magnetoconductive was added. The results of the experiments verified the correctness of the simulation analysis. Index Terms--Active electric armor, electromagnetic launch, finite-element analysis.

This paper demonstrates modeling of the busbars and the magnetic field in an aluminum reduction cell. The methodology presented is focused on a series of fast and effective numerical calculations, where in the initial state the busbars of the reduction cell are represented by an equivalent resistance network. The analysis relies on calculating a complete finite element model with different wave forms imposed on the liquid fluid interface for magnetohydrodynamic stability calculation purposes. Principles of the approach are presented and results from a reduction cell analysis are shown. Index Terms--Busbars, equivalent circuits, finite element method (FEM), metals industry.

Observation of experimental negative differential resistance at room temperature due to electron tunneling in a multiple-step single-barrier GaAlAs heterostructure is reported in this article. The experiment showed reasonable agreement with theoretical predictions.

Magnetic tunnel junctions (MTJs), Ta(5 nm)/Al(20 nm)/Ni79Fe21 (5 nm)/Ir22Mn78 (10 nm)/Co75Fe25 (4 nm)/ Al(x nm)-oxide/Co75Fe25 (4 nm)/Ni79Fe21 (20 nm)/Ta (5 nm) [x=0.8 and 0.9 nm], with 20 nm thick Al conduction layers are fabricated using magnetron sputtering deposition. The results suggest that pinhole defects could be eliminated or significantly reduced with a critical Al-oxide layer fabrication condition together with the annealing process.

The x-ray magnetic circular dichroism (XMCD) sum rules are applied to SmAl2 since it is one of the few cases in which the spin (S) and orbital (L) magnetic moments are previously determined. The results show that the magnetic0dipole term (T(sub z)) is parallel to the orbital magnetic moment, (L(sub z)), but antiparallel to the spin magnetic moment, (S(sub z)).

The magnetoresistance (MR) behavior in NiFe-Al-NiFe single-electron tunneling devices is studied. It was seen that in general, the resistance increases with decreasing the current for the central Al island in its superconducting state.

The magnetic tunnel junctions (MTJs) are synthesized using Al-O insulating layers prepared on an epitaxial Ni(sub 80)Fe(sub 20) (NiFe) bottom electrode and on a polycrystalline NiFe bottom electrode and the differences in tunnel magnetoresistance (TMR) ratios and their bias dependences are discussed. The result indicates that output signals of the devices based on MTJs, can be enhanced by improving the insulating layer quality.

The deposition behavior of Co and Al substrate was investigated by classical molecular dynamics (MD) simulation. It was found that the atomic structure of the alloy at interface was dependent on the substrate orientation.

The investigation of transport properties of ferromagnetic/nonmagnetic/ferromagnetic single electron transistors as a function of external magnetic-field, temperature, bias and gate voltage is presented. The result suggests that the sweep-rate-dependent magnetoresistance (MR) in Co/Al/Co double tunnel junctions is not connected with the relative magnetic alignment of the two ferromagnetic electrodes.

The magnetic properties of the Mn-Al system alloys produced by mechanical alloying are evaluated. It is seen that the saturation magnetization is strongly dependent on the composition and the optimization of the annealing conditions together with compositional modification leads to improvement of the saturation magnetization of Mn-Al-C powders.

The effectiveness of Al, Au, Cu, Ni, Fe, and Ta films with thicknesses up to 4 nm for protecting a Co surface from oxidation in air at room temperature is investigated. It was seen that the best choices for protecting Co from oxidation were Al and Ta and Au was not very effective for protecting Co.

The dependence of junction performance on oxidation pressure and oxidation time for top-pinned and bottom-pinned AlO(sub x) junctions fabricated on top of smoothed bottom leads is examined. Resistances varying from 31 to 406 omega mu m(super 2) and tunneling magnetoresistance (TMR) varying from 8.5 percent to 19.6 percent for the as deposited state were observed in top-pinned junctions on changing the oxidation time from 10 min to 10 h with the oxygen pressure of 10 and 100 Torr.

The effects of rf plasma etching treatment on textured NiP/Al substrate on the properties of CoCrTaPt/CrMo longitudinal recording media are examined. An increase in coercivity and coercivity orientation ratio, and a decline in disk surface roughness can be obtained by optimizing the etching process parameters.

X-ray photoelectron spectroscopy (XPS) was used for examining the incorporation of nitrogen in FeSiAl(N) reactive sputtered films. The changes in the apparent relative sputtering yields are observed at higher N levels with considerable decline in the Fe content of the film and a modest increase in Al and Si percentages.

Mossbauer spectroscopy and magnetization measurements were used for determining the phases responsible for the glassy magnetic dynamics of the highly disordered alloy Fe35Al50B15 produced by mechanical alloying. The spin-glass transition is exclusively due to the presence of collective freezing of fine ferromagnetic Fe-rich clusters containing ~40 Fe atoms with a reduced moment of ~1.7 muB

The growth, as well as the structural and magnetic properties exhibited by the epitaxial [Fe.sub.3][O.sub.4/ZnO and ZnO/[Fe.sub.3][O.sub.4] bilayers grown on c-[Al.sub.2][O.sub.3] substrate are discussed. The [Fe.sub.3][O.sub.4/ZnO bilayer is shown to be much more stable, as compared to the other bilayers.

Several studies are conducted to explain the different phase-breaking effects taking place in the double-barrier resonant tunneling diodes exhibiting different spin-orbit interactions. The magnitude of the spin polarization taking place in the system is shown to be highly dependent on the quasibound state broadening.

Several studies are conducted to explain the structure, as well as the transport properties of the current-perpendicular-to-plane spin valves using [Co.sub.2]Fe[Al.sub.0.5][Si.sub.0.5] and [Co.sub.2]MnSi Heusler alloy electrodes. The valves are shown to exhibit extremely high magnetoresistance, which is then completely dependent on the temperature.

The molecular beam epitaxy technique is employed to explain the various effects of aluminum doping on the different magnetotransport properties of the Si:Ce thin films. The magnetoresistance of the films is shown to increase with the carrier concentration.

Several studies and measurements are conducted to explain the synthesis and properties of the single crystalline [alpha]-TmAl[B.sub.4] compounds. The anomalous low temperature magnetic transition exhibited by them is also analyzed.

The article explains the synthesis and the physical, as well as the magnetic properties of the [beta]-TmAl[B.sub.4]; an Al[B.sub.2]-type analogous compounds. These compounds are shown to exhibit extremely strong magnetic interactions.

The hydrostatic pressure effects on the conduction-electron Lande g factor in GaAs-[Ga.sub.1-x][Al.sub.x]As quantum heterostructures (QHs) under the impact of applied magnetic fields are studied. The competition between the geometrical and magnetic confinement versus hydrostatic pressure effects has shown that the geometrical confinement has commanded the behavior of the g factor.

Hybrid vertical architecture transistors are prepared, which has shown magnetic-field dependent electrical characteristics by using tris-(8-hydroxyquinoline) aluminum ([Alq.sub.3]), sulfonated polyaniline (SPAN), and n-type silicon. The rate of electrons that cross emitter and base layers and reach the collector is shown to be affected by the magnetic field, which has led to magnetic-field-dependent common-emitter current gain larger than 1.

A rate equation approach is employed to determine the intersystem crossing rate constant for the aluminum tris(8-hydroxyquinoline) compound. The rate constant is shown to highly increase by the presence of a magnetic field.

The article studies the comparison between single and double pulse laser induced breakdown spectroscopy (LIBS). Findings reveal that double pulse collinear configuration concedes three hundred times signal enhancement in the singly ionized aluminum lines as compared to the single pulse LIBS spectrum.

Complex-conductivity (rf-skin depth) and magnetoresistance measurements are performed on antiferromagnetic UTX compounds (T = Ni and X = Al, Ga and Ge) in applied magnetic fields up to 60 T applied parallel to the easy direction. Many first-order metamagnetic transitions, which are accompanied by a drastic change in the resonant frequency, are seen in these compounds.

BiFe[O.sub.3] (BFO) films are prepared by nebulized spray pyrolysis method on a single crystal LaAl[O.sub.3] (001) substrate and annealing in oxygen. The origin of anomalous ferromagnetism in these films is traced to the presence of nanometric [Fe.sub.2][O.sub.3] embedded in the BFO matrix.