227 results on '"Chang, Yao-Feng"'
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2. A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems
3. Gamma Irradiation in HfOₓ-Based Resistive Switching Memory With Mitigated Performance Degradation Using Ruthenium Electrode
4. Mitigating State-Drift in Memristor Crossbar Arrays for Vector Matrix Multiplication
5. Enhancing simulation feasibility for multi-layer 2D MoS2 RRAM devices: reliability performance learnings from a passive network model.
6. Programmable Retention Characteristics in MoS2‑Based Atomristors for Neuromorphic and Reservoir Computing Systems.
7. Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors.
8. Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy
9. Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory
10. Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS 2 Memristors
11. A Physical Unclonable Function Leveraging Hot Carrier Injection Aging
12. Editorial for the Special Issue on the Progress of Emerging Hardware Development for Post-Moore’s Computing
13. Understanding the Resistive Switching Mechanism of 2-D RRAM: Monte Carlo Modeling and a Proposed Application for Reliability Research
14. BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation
15. Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory
16. Effect of Temperature on Analog Memristor in Neuromorphic Computing
17. Fuzzy Multiple Criteria Decision Making Approach to Assess the Project Quality Management in Project
18. Physical and chemical mechanisms in oxide-based resistance random access memory
19. A Synaptic Device Built in One Diode–One Resistor (1D–1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory
20. Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices
21. Mechanism and characterizations studies of resistive switching effects on a thin FeO x-transition layer of the Ti/TiN/SiO 2/FeO x/FePt structure by thermal annealing treatments
22. Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory
23. Reproducible resistance switching of a relatively thin FeO x layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure
24. 2D RRAM and Verilog-A model for Neuromorphic Computing
25. ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing
26. Embedded emerging memory technologies for neuromorphic computing: temperature instability and reliability
27. Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions
28. A 5-V-Program 1-V-Sense Anti-Fuse Technology Featuring On-Demand Sense and Integrated Power Delivery in a 22-nm Ultra Low Power FinFET Process
29. A Study of the Relationship Between Endurance and Retention Reliability for a HfOₓ-Based Resistive Switching Memory
30. Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures
31. SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
32. Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing
33. eNVM RRAM reliability performance and modeling in 22FFL FinFET technology
34. Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device
35. Additional file 1: of Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory
36. Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
37. The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector
38. Concurrent events of memory and threshold switching in Ag/SiNx/Si devices
39. Nonlinearity Enhancement by Positive Pulse Stress in Multilevel Cell Selectorless RRAM Applications
40. Corrigendum: Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application (2018 J. Phys. D: Appl. Phys. 51 055108)
41. Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate
42. Selector-Less Graphite Memristor: Intrinsic Nonlinear Behavior with Gap Design Method for Array Applications
43. Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory.
44. Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure.
45. Probing the Implementation of Project Management Office by Using DEMATEL with a Hybrid MCDM Model
46. Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application
47. Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications
48. Beyond SiOx: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria
49. Effects of Ambient Sensing on SiOx-Based Resistive Switching and Resilience Modulation by Stacking Engineering
50. Analog Synaptic Behavior of a Silicon Nitride Memristor
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