444 results on '"Chyi, J. I."'
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2. E-beam-evaporated Al 2O 3 for InAs/AlSb metal–oxide–semiconductor HEMT development
3. Lateral schottky GaN rectifiers formed by Si+ ion implantation
4. Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
5. Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
6. Phonon–replica transitions in InGaN/GaN quantum well structures
7. Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
8. Processing and Device Performance of GaN Power Rectifiers
9. Properties and Effects of Hydrogen in GaN
10. Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides
11. A two-stack, multi-color In 0.5Ga 0.5As/GaAs and lnAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection
12. The Fermi level of annealed low-temperature GaAs on Si-delta-doped GaAs grown by molecular beam epitaxy
13. Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates
14. Influence of nonuniform doping on the uniformity of current gain, base transit time, and related properties of AlGaAs/GaAs heterojunction bipolar transistors
15. 1.3 νm InAs/GaAs Quantum Dots Directly CappedWith GaAs Grown By Metal Organic Chemical Vapor Deposition
16. Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids.
17. Insulator/GaN Heterostructures of Low Interfacial Density of States
18. Device Processing for GaN High Power Electronics
19. Temperature Dependence and Current Transport Mechanisms in AlxGa1−xN Schottky Rectifiers
20. Properties and Effects of Hydrogen in GaN
21. GaN electronics for high power, high temperature applications
22. Schottky rectifiers fabricated on free-standing GaN substrates
23. Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
24. Spatial distribution of electrical properties in GaN p-i-n rectifiers
25. Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
26. Surface and bulk leakage currents in high breakdown GaN rectifiers
27. Temperature dependence of GaN high breakdown voltage diode rectifiers
28. Optical emission from individual InGaAs quantum dots in single-defect photonic crystal nanocavity.
29. Schottky barrier heights of In(x)Al(1-x)As (0 less than or equal to x less than or equal to 0.35) epilayers on GaAs
30. Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot.
31. Behavior of arsenic precipitation in low-temperature grown III–V arsenides
32. Effect of junction and band-gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double-heterojunction bipolar transistors.
33. Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs-GaAs multiple-quantum-well structures.
34. The Fermi level of annealed low-temperatue GaAs on Si-...-doped GaAs grown by molecular beam...
35. Study of the optical properties of In0.52(AlxGa1-x)0.48As by variable angle spectroscopic ellipsometry.
36. Composition dependent Raman scattering of [formula omitted]
37. Direct measurement of piezoelectric field in In[sub 0.23]Ga[sub 0.77]N/GaN multiple quantum wells by electrotransmission spectroscopy.
38. (Invited) Investigations and Improvements of AlInN/GaN HEMTs Grown on Si
39. N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator
40. Electrical and Optical Characteristics of GaAs0.6 P0.4 LEDs Fabricated by Zn Semi-Closed Diffusion Method
41. Coherence properties of InAs quantum dot emissions from quasi-L2 photonic crystal nanocavities
42. Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs.
43. Minority-carrier lifetime in AlxGa1-xAs grown by molecular-beam epitaxy.
44. Publisher's Note: “The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors” [Appl. Phys. Lett. 104, 033503 (2014)]
45. The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors
46. Properties and Effects of Hydrogen in GaN
47. Nitride-based concentrator solar cells grown on Si substrates
48. Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs
49. Study of Protein-Peptide Binding Affinity Using AlGaN/GaN High Electron Mobility Transistors
50. Fast spin relaxation in InGaN/GaMnN spin LEDs : an obstacle to spin detection for future spintronics applications
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