Search

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage ( \text V\mathrm { {DS}} ) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored. [ABSTRACT FROM PUBLISHER]

A study of proton-induced destructive SEE (DSEE) from Au-plated lid fission fragments has been expanded. Seventeen additional lid materials (Z =26–83) are studied. Lead (Pb) produced a higher sensitivity than seen in previous work with gold (Au), raising new concerns of SEE enhancement due to die-proximate Pb-based solder in flip-chip package designs. New analysis has allowed generalized RHA rules to be developed. [ABSTRACT FROM PUBLISHER]

Proton single event dielectric rupture was observed in Analog Devices OP470 devices only when the package included gold flashing facing the die on the inner surface of the metal lid. The supply voltage was also a factor. Analysis shows that proton on gold fission fragments have the linear energy transfer and range to cause this effect. The physics of proton on gold reactions and radiation hardness assurance implications are explored. [ABSTRACT FROM PUBLISHER]

The propagation of Analog Single Event Transients (ASETs) to multiple outputs of Bipolar Junction Transistor (BJTs) Integrated Circuits (ICs) is reported for the first time. The results demonstrate that ASETs can appear at several outputs of a BJT amplifier or comparator as a result of a single ion or single laser pulse strike at a single physical location on the chip of a large-scale integrated BJT analog circuit. This is independent of interconnect cross-talk or charge-sharing effects. Laser experiments, together with SPICE simulations and analysis of the ASET’s propagation in the s-domain are used to explain how multiple-output transients (MOTs) are generated and propagate in the device. This study demonstrates that both the charge collection associated with an ASET and the ASET’s shape, commonly used to characterize the propagation of SETs in devices and systems, are unable to explain quantitatively how MOTs propagate through an integrated analog circuit. The analysis methodology adopted here involves combining the Fourier transform of the propagating signal and the current-source transfer function in the s-domain. This approach reveals the mechanisms involved in the transient signal propagation from its point of generation to one or more outputs without the signal following a continuous interconnect path. [ABSTRACT FROM PUBLISHER]