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6. Challenges to measure RF noise and intermodulation performances of mmW/THz devices

Author

Danneville, Francois, Ghanem, Haitham, Gonçalves, Joao Carlos Azevedo, Lepilliet, Sylvie, Gloria, Daniel, Ducournau, Guillaume, Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), STMicroelectronics [Crolles] (ST-CROLLES), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), no information, PCMP CHOP, and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
noise, THz, measurement, mmW, third order intermodulation point, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience; Applications in millimetre wave range and terahertz frequencies keep on increasing. In this context, drastic challenges are faced at measurement level, in particular to extract noise performance and nonlinear properties of devices and circuits used to build the required systems. The aim of this talk is to provide an overview of these challenges, and to describe the solutions that we have developed to respond to them.

Published
2022
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10. Bioinspired frugal technology for biomimetic optical sensors

Author

Danneville, Francois, Carpentier, Kevin, Loyez, Christophe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Société d’Accélération du Transfert de Technologie (SATT NORD), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN ), no information, and PCMP SigmaCom

Subjects
[PHYS]Physics [physics], stomatognathic diseases, [SPI]Engineering Sciences [physics]
Abstract

oral; National audience

Published
2022

13. Experimental investigation of RF noise performance improvement in graded-channel MOSFETs

Author

Emam, Mostafa, Sakalas, Paulius, Vanhoenacker-Janvier, Danielle, Raskin, Jean-Pierre, Tao Chuan Lim, and Danneville, Francois

Subjects
Gates (Electronics) -- Evaluation, Metal oxide semiconductors -- Evaluation, Business, Electronics, Electronics and electrical industries
Abstract

The radio frequency (RF) noise performance of graded-channel metal-oxide-semiconductor (MOS) transistors (GCMOS) has displayed impressive reduction in minimum noise figure (N [F.sub.min]) as compared to classical MOSFET transistors. The studies have shown that the use of gate-length GCMOS has given a competitive RF noise performance when compared to gate-length classical nMOS transistors.

Published
2009

14. Analog/RF performance of multichannel SOI MOSFET

Author

Tao Chuan Lim, Bernard, Emilie, Rozeau, Olivier, Ernst, Thomas, Guillaumot, Bernard, Vulliet, Nathalie, Buj-Dufournet, Christel, Paccaud, Michel, Lepilliet, Sylvie, Dambrine, Gilles, and Danneville, Francois

Subjects
Silicon-on-isolator -- Usage, Metal oxide semiconductor field effect transistors -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

The radio frequency (RF) experimental and simulation study of a 3-dimensional (3-D) multichannel silicon-on-insulator (SOI) MOSFET (MCFET) is presented. The studies have shown that optimized MCFETs are a serious contender to the mainstream MOSFETs including FinFETs for realizing future low-power analog applications.

Published
2009

15. Improved characterization methology for MOSFETs up to 220 GHz

Author

Waldhoff, Nicolas, Andrei, Cristian, Gloria, Daniel, Lepilliet, Sylvie, Danneville, Francois, and Dambrine, Gilles

Subjects
Business, Computers, Electronics, Electronics and electrical industries
Abstract

Measurement and modeling procedures to accurately extract a small-signal equivalent circuit of advanced MOSFETs up to 220 GHz are proposed. The methodology carried out goes from the vector network analyzer calibration to the simulation results using complex deembedding. Good comparisons between the measurement and the simulation data obtained using this procedure are shown up to 220 GHz. Index Terms--Calibration, circuit modeling, deembedding, millimeter-wave measurement, MOSFET, S-parameters, small-signal model.

Published
2009

16. Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS

Author

Kane, Ousmane Magatte, Lucci, Luca, Scheiblin, Pascal, Poiroux, Thierry, Barbé, Jean-Charles, Danneville, Francois, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
back gate, [SPI]Engineering Sciences [physics], CMOS, 22FDX, noise measurement, millimeter wave, FDSOI
Abstract

International audience; Ultra-Thin-Body and Back-oxide Fully-Depleted Silicon-On-Insulator (UTBB-FDSOI) MOSFETs are the most recent and advanced Silicon-On-Insulator (SOI) architecture proposed to overcome the down-scaling limitations of traditional bulk devices. The UTBB-FDSOI architecture has already been proved very attractive for RF-mmW circuits thanks to the excellent reported RF figure of merits (FOMs).In this article, we report on an experimental investigation of the back gate biasing impact on the high-frequency (HF) noise performances of an advanced 22 nm UTBB-FDSOI technology developed by GLOBALFOUNDRIES. For the lower gate voltages, the back gate biasing was shown to decrease by one third the equivalent noise resistance (Rn). Moreover, a 3 dB increase for the associated gain (Ga) was achieved at Vg=0.3V. A relaxed contacted-poly-pitch was also shown to decrease Rn by 11%.

Published
2021

17. High-frequency noise performance of 60-nm gate-length FinFETs

Author

Raskin, Jean-Pierre, Pailloncy, Guillaume, Lederer, Dimitri, Danneville, Francois, Dambrine, Gilles, Decoutere, Stefaan, Mercha, Abdelkarim, and Parvais, Bertrand

Subjects
Electromagnetic noise -- Evaluation, Field-effect transistors -- Evaluation, Gates (Electronics) -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The radio-frequency noise performance of FinFETs from a 60-nm gate length is investigated. It is observed that the fringing capacitance of the 3-D and multifin structure of the FinFETS is responsible for the degradation of its noise performance.

Published
2008

18. Impact of lateral asymmetry of MOSFETs on the gate-drain noise correlation

Author

Roy, Ananda S., Enz, Christian C., Tao Chuan Lim, and Danneville, Francois

Subjects
Impedance (Electricity) -- Evaluation, Metal oxide semiconductor field effect transistors -- Evaluation, Business, Electronics, Electronics and electrical industries
Abstract

The physical reason behind the very high correlation between the drain and induced gate noise in a lateral asymmetric channel MOSFET (LAC-MOSFET) is discussed. The high correlation between the drain and gate noise is due to the strong localization of the drain and gate impedance fields (IFs).

Published
2008

19. RF small-signal analysis of Schottky-barrier p-MOSFET

Author

Valentin, Raphael, Dubois, Emmanuel, Raskin, Jean-Pierre, Larrieu, Guilhem, Dambrine, Gilles, Tao Chuan Lim, Breil, Nicolas, and Danneville, Francois

Subjects
Metal oxide semiconductor field effect transistors -- Evaluation, Semiconductor-metal boundaries -- Analysis, Silicon-on-isolator -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The article discusses the results obtained from the RF small-signal study of the source/drain Schottky-barrier (SB) p-MOSFETs. The SB MOSFETs are shown to exhibit much better properties than the conventional MOSFETs.

Published
2008

20. A 7-dB 43-GHz CMOS distributed amplifier on high-resistivity SOI substrates

Author

Pavageau, Christophe, Moussa, Mehdi Si, Raskin, Jean-Pierre, Vanhoenaker-Janvier, Danielle, Fel, Nicolas, Russat, Jean, Picheta, Laurence, and Danneville, Francois

Subjects
Waveguides -- Design and construction, Complementary metal oxide semiconductors -- Properties, Microwave amplifiers -- Design and construction, Microwave integrated circuits -- Design and construction, Business, Computers, Electronics, Electronics and electrical industries
Abstract

This paper presents designs and measurements of distributed amplifiers (DAs) processed on a 130-nm silicon-on-insulator CMOS technology on either standard-resistivity (10 [ohm] * cm) or high-resistivity (>1 k[ohm] * cm) substrates, and with either body-contacted (BC) or floating-body (FB) MOSFETs. Investigations have been carried out to assess the impact of active device performance and transmission line losses on circuit design by means of simulations, analytical calculations, and comparisons of the small-signal equivalent-circuit parameters. On standard-resistivity substrates, DAs with FB devices and lossy microstrip lines on thin film exhibit a measured gain of 7.1 dB and a unity-gain bandwidth (UGB) of 27 GHz for a dc power consumption of 57 mW. With the introduction of high-resistivity substrates, other DAs, with the same architecture and using lower loss coplanar waveguide lines, show a UGB of 51 GHz with FB devices and 47 GHz with BC devices. To the authors' knowledge, the designs presented in this paper achieve the best tradeoffs in terms of gain, bandwidth, and power consumption for CMOS-based circuits with comparable architecture. Index Terms--CMOS, coplanar waveguides (CPWs), distributed amplifier (DA), microstrip (MS), monolithic microwave integrated circuit (MMIC), silicon-on-insulator (SOI).

Published
2008

21. Compact-modeling solutions for nanoscale double-gate and gate-all-around MOSFETs

Author

Iniguez, Benjamin, Fjeldly, Tor A., Lazaro, Antonio, Danneville, Francois, and Deen, M. Jamal

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Approximation theory -- Usage, Gates (Electronics) -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

Developments in compact-modeling principles and solutions for nanoscale double-gate (DG) and gate-all-around (GAA) MOSFETs are presented and reviewed. Techniques are presented to extend these compact models to the high-frequency regime and to study the main high-frequency parameters and characteristics such as noise.

Published
2006

22. High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperature

Author

Siligaris, Alexandre, Pailloncy, Guillaume, Delcourt, Sebastien, Valentin, Raphael, Lepilliet, Sylvie, Danneville, Francois, Gloria, Daniel, and Dambrine, Gilles

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Liquid nitrogen -- Thermal properties, Electromagnetic noise -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The high-frequency properties of very deep sub-micron MOSFETs are investigated at liquid nitrogen temperature and at room temperature. The improvement of the noise performances shown by the device at 78 K is explained by the decrease of the operating temperature, extrinsic resistance values and an improvement of the dynamic performances at 78 K.

Published
2006

23. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

Author

Rengel, Raul, Dambrine, Gilles, Martin, Maria Jesus, Raskin, Jean-Pierre, Gonzalez, Tomas, Danneville, Francois, Mateos, Javier, and Pardo, Daniel

Subjects
Silicon-on-isolator -- Methods, Metal oxide semiconductor field effect transistors -- Design and construction, Electromagnetic noise -- Analysis, Monte Carlo method -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

A detailed research of the high-frequency noise sources and figures of merit (FOMs) of fabricated deep-submicrometer n-channel fully depleted silicon-on-insulator MOSFETs is presented, Together with the calculation of intrinsic noise source, the Monte Carlo simulator is able to reproduce the measurement for the main noise FOMs in the RF and microwave frequency ranges.

Published
2006

26. 130-nm partially depleted SOI MOSFET nonlinear model including the kink effect for linearity properties investigation

Author

Siligaris, Alexandre, Dambrine, Gilles, Schreurs, Dominique, and Danneville, Francois

Subjects
Silicon-on-isolator -- Methods, Metal oxide semiconductor field effect transistors -- Design and construction, Linearization (Electronics) -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The proposal of a new method for modeling the kink effect in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs is discussed. When the load impedance is high and the frequency spacing is within the kink frequency domain, the kink effect degrades the intermodulation.

Published
2005

27. Impact of downscaling on high-frequency noise performance of bilk and SOI MOSFETs

Author

Pailloncy, Guillaume, Raskin, Jean-Pierre, Raynaud, Christine, Vanmackelberg, M., Danneville, Francois, Lepilliet, S., and Dambrine, Gilles

Subjects
Very-large-scale integration -- Analysis, Metal oxide semiconductor field effect transistors -- Research, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

Parameters limiting the improvement of high-frequency noise characteristics for deep-submicrometer MOSFETs with the downscaling process of the channel gate length are analyzed experimentally and analytically. It is observed that the intrinsic Pucel's noise P, R, and C parameters are not strongly modified by the device scaling. .

Published
2004

29. High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

Author

Dambrine, Gilles, Raskin, Jean-Pierre, Danneville, Francois, Vanhoenacker-Janvier, and Colinge, Jean-Pierre

Subjects
Complementary metal oxide semiconductors -- Research, Solid state electronics -- Research, Metal oxide semiconductor field effect transistors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A comprehensive study was conducted to investigate the high-frequency noise properties of metal oxide semiconductor field effect transistor in silicon-on-insulator (SOI) technology. Various gate topologies were used to determine the influence of effective channel length, gate finger width and gate sheet resistivity on the four noise parameters. It was proved that the fully-depleted SOI complementary metal oxide semiconductor process is capable of realizing low-noise amplifiers for multigigahertz portable communications systems.

Published
1999

30. Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

Author

Danneville, Francois, Dambrine, Gilles, and Cappy, Alain

Subjects
Noise -- Analysis, Field-effect transistors -- Observations, Business, Electronics, Electronics and electrical industries
Abstract

Noise analysis is important in modern general-purpose microwave circuit simulators. A microscopic noise model for a FET driven by a periodic large signal is presented. The well-known linear case is used as a guide, and a generalized form of Shockley impedance field method is proposed. The use of a uniform line model avoids the use of complex physical FET models.

Published
1998

31. A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design

Author

Dambrine, Gilles, Belquin, Jean-Maxence, Danneville, Francois, and Cappy, Alain

Subjects
High-electron-mobility transistors -- Models, Millimeter wave devices -- Research, Circuit design -- Models, Microwave devices -- Research, Integrated circuits -- Research, Business, Computers, Electronics, Electronics and electrical industries
Abstract

In this paper, we propose a reliable extrinsic equivalent circuit of a high-performance high electron-mobility transistor (HEMT) to determine both the [S]-parameters and noise parameters in the millimeter-wave range from characterizations performed below 40 GHz. In the case of the conventional equivalent circuits, only three extrinsic elements have to be determined instead of (at least) eight. We show the validity of the proposed extrinsic equivalent circuit by [S]-parameters and noise figure measurements up to the W-band (75-110 GHz). The proposed equivalent circuit is reliable and is very well suited for the design of low-noise integrated circuits for millimeter waves.

Published
1998

32. Noise and transit time in ungated FET structures

Author

Mateos, Javier, Gonzalez, Tomas, Pardo, Daniel, Tadyszak, Patrick, Danneville, Francois, and Cappy, Alain

Subjects
Field-effect transistors -- Research, High-electron-mobility transistors -- Research, Gallium arsenide semiconductors -- Research, Monte Carlo method -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

Research was conducted to examine the noise and frequency behavior of ungated high electron mobility transistors (u-HEMT) with respect to gallium arsenide ungated metal oxide semiconductor field-effect transistor. The Monte-Carlo simulation was utilized to compare static characteristics and noise temperature. Results indicated that the transit time and velocity distributions of ungated metallized semiconductor field-effect transistors spread much more in u-HEMT.

Published
1997

33. Microscopic noise modeling and macroscopic noise models: how good a connection?

Author

Danneville, Francois, Happy, Henri, Dambrine, Gilles, Belquin, Jean-Maxence, and Cappy, Alain

Subjects
Field-effect transistors -- Research, Integrated circuits -- Models, Electromagnetic noise -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

High frequency noise performance of field effect transistors (FETs) is calculated by an active line concept approach which calculates the FET small signal equivalent circuit and the microscopic noise sources for different two-port terminations. The results are correlated to each other by an analytical theory. The analytical noise model is compared with a numerical model. The results agree with the Pospieszalski model and Pucel models.

Published
1994

34. A new method for on wafer noise measurement

Author

Dambrine Gilles, Happy, Henry, Danneville, Francois, and Cappy, Alain

Subjects
Electromagnetic noise -- Measurement, Semiconductor wafers -- Research, High-electron-mobility transistors -- Usage, Business, Computers, Electronics, Electronics and electrical industries
Abstract

A new method for measuring the noise parameters of MESFET's and HEMT's is presented. This new method is based on the fact that only three independent noise parameters are sufficient to fully describe the device noise performance. It is shown that two noise parameters (R(sub n) and absolute value of Y(sub opt)) can be directly obtained from the frequency variation of the noise figure F(sub 50) corresponding to a 50 ohms generator impedance. By using a theoretical relation between the intrinsic noise sources as additional data, the F(sub 50) measurement only can provide the four noise parameters. A good agreement with more conventional techniques is obtained.

Published
1993

35. Energy efficient communication with neuro-inspired detector

Author

Savard, Anne, Clavier, Laurent, Danneville, Francois, Loyez, Christophe, Ecole nationale supérieure Mines-Télécom Lille Douai (IMT Lille Douai), Institut Mines-Télécom [Paris] (IMT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Quantitative Biology::Neurons and Cognition, ComputingMethodologies_ARTIFICIALINTELLIGENCE, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing
Abstract

This paper focuses on the theoretical performance of a neuro-inspired digital communication, where the input signal is below the activation threshold of the neuron, making the noise crucial for the detection. We first derive the error probability of a neuro-inspired detector build upon a single Integrate-and-Fire (IF) neuron and then extend this result to a IF-based detector build upon multiple neurons. In this case, we propose to optimize the number of neurons in parallel, leading to an error probability of below 10 −4 for a large noise range, proving the strength of such a IF-based detector.

Published
2018

36. Open problems in brain-emulating hardware: [Invited]

Author

Danneville, Francois, Sourikopoulos, Ilias, HEDAYAT, Sara, LOYEZ, Christophe, Hoel, Virginie, Cappy, A., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, and Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2018

40. Influence of Al Mole fraction on the noise performance of GaAs//Al(sub x)Ga(sub 1-x)As HEMT's

Author

Mateos, Javier, Pardo, Daniel, Gonzalez, Tomas, Tadyszak, Patrick, Danneville, Francois, and Cappy, Alain

Subjects
High-electron-mobility transistors -- Analysis, Electromagnetic noise -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The decline of the energy barrier at the heterojunction as the Al mole fraction is reduced causes the noise associated to this electrode to increase, thus, affecting the noise performance of GaAs/AlGaAs high electron mobility transistors. This was found in a study of the influence of the Al mole fraction on the intrinsic noise properties of GaAs/AlGaAs high electron mobility transistors, wherein P, R and C noise parameters and the minimum intrinsic noise figure are calculated.

Published
1998

50. Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique

Author

Philippe, Justine, Lecavelier, Aurélien, Danneville, Francois, Gloria, Daniel, Dubois, Emmanuel, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and STMicroelectronics [Crolles] (ST-CROLLES)

Abstract

Depuis plusieurs années, l'électronique flexible permet de fabriquer à faible coût des dispositifs souples sur de grandes surfaces. Cependant, les performances de ce type de circuit sont actuellement limitées par les faibles mobilités de ces matériaux (de l'ordre du cm².V-1.s-1), rendant impossible toute utilisation en radiofréquence. De plus, ces dispositifs ne comportent, en général, qu'un seul degré d'intégration et sont assignés à une fonction unique. L'objectif de ce projet est de reporter des circuits communicants amincis, issus de technologies CMOS matures, sur un support flexible, afin de bénéficier de la flexibilité d'un substrat souple tout en conservant les propriétés électroniques de l'élément originel. Pour cela, le circuit doit être inclu dans le plan neutre du système où il ne subira aucune contrainte mécanique et, par conséquent, aucune modification de ses propriétés électriques.

Published
2014

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