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We clarify the difference between the SiH4 consumption efficiency η and the SiH4 depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH4 consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH4 concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH4 concentration in the plasma cp, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH4 density measurements throughout the ignition and the termination of a plasma. [ABSTRACT FROM AUTHOR]

Monolithic integration of a perovskite solar cell and silicon solar cell into a tandem device is a promising path toward high-performance photovoltaics (PVs) at affordable cost. However, with a maximum theoretical PCE of 29.4% (7), practical performance limits for a single-junction silicon PV (a solar cell made from a silicon wafer as light absorber) are in sight. INSIGHTS One way to increase the efficiency of a solar cell is to optimize it to the wide spectrum of sunlight for conversion into electricity. [Extracted from the article]

Doped hydrogenated amorphous silicon (a-Si:H) films of only a few nanometer thin find application in a-Si:H/crystalline silicon heterojunction solar cells. Although such films may yield a field effect at the interface, their electronic passivation properties are often found to be inferior, compared to those of their intrinsic counterparts. In this article, based on H2 effusion experiments, the authors argue that this phenomenon is caused by Fermi energy dependent Si¿H bond rupture in the a-Si:H films, for either type of doping. This results in the creation of Si dangling bonds, counteracting intentional doping of the a-Si:H matrix, and lowering the passivation quality. [ABSTRACT FROM AUTHOR]

In this article, we report on the use of direct plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films deposited at low excitation frequency (440 kHz) on low-resistivity (1.5 Ω cm) p-type Czochralski silicon substrate surfaces with different textures, to elucidate the influence of microroughness of the substrate surface on the surface-passivating properties of thin SiNx films. Whereas flat surfaces get the best passivation from Si-rich SiNx films, the optimum passivation shifts towards stoichiometric nitride as the microroughness increases, which points to the increasing relative importance of a charge-induced field effect. When short high-temperature (firing) treatments are applied upon passivation layer deposition, the process window to yield good surface passivation broadens, although very Si-rich films tend to suffer from blistering. [ABSTRACT FROM AUTHOR]

Silicon heterojunction solar cells use crystalline silicon ( c -Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon ( a -Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells increase their operating voltages and thus their conversion efficiencies during light exposure. We found that this performance increase is due to improved passivation of the a -Si:H/ c -Si interface and is induced by injected charge carriers (either by light soaking or forward-voltage biasing of the device). Here, we discuss this counterintuitive behavior and establish that: (i) the performance increase is observed in solar cells as well as modules; (ii) this phenomenon requires the presence of doped a -Si:H films, but is independent from whether light is incident from the a -Si:H( p ) or the a -Si:H( n ) side; (iii) UV and blue photons do not play a role in this effect; (iv) the performance increase can be observed under illumination intensities as low as 20 W m −1 (0.02-sun) and appears to be almost identical in strength when under 1-sun (1000 W m −1 ); (v) the underlying physical mechanism likely differs from annealing-induced surface passivation. [ABSTRACT FROM AUTHOR]

Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/ intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forwardvoltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented. [ABSTRACT FROM AUTHOR]

Silicon heterojunction solar cells critically depend on the detailed properties of their amorphous/crystalline silicon interfaces. We report here on the use of attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy to gain precise insight into the vibrational properties of the surfaces and ultrathin layers present in such solar cells. We fabricate ATR prisms from standard silicon wafers similar to those used for device fabrication. In this fashion, we acquire very-high sensitivity FTIR information on device-relevant structures. Our method has no requirement for minimum layer thickness, enabling the study of the impact of the different fabrication process steps on the film microstructure. We discuss the necessary requirements for the method implementation and give a comprehensive overview of all observed vibration modes. In particular, we study vibrational signatures of Si-HX, Si-HX(SiYOZ), B-H, hydroxyl groups, and hydrocarbons on the Si(111) surface. We observe subtle effects in the evolution of the chemical state of the surface during sample storage and process-related wafer handling and discuss their effect on the electronic properties of the involved interfaces. [ABSTRACT FROM AUTHOR]

Damage of the hydrogenated amorphous/crystalline silicon interface passivation during transparent conductive oxide sputtering is reported. This occurs in the fabrication process of silicon heterojunction solar cells. We observe that this damage is at least partially caused by luminescence of the sputter plasma. Following low-temperature annealing, the electronic interface properties are recovered. However, the silicon-hydrogen configuration of the amorphous silicon film is permanently changed, as observed from infra-red absorbance spectra. In silicon heterojunction solar cells, although the as-deposited film's microstructure cannot be restored after sputtering, no significant losses are observed in their open-circuit voltage. [ABSTRACT FROM AUTHOR]

Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk. [ABSTRACT FROM AUTHOR]

Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H. [ABSTRACT FROM AUTHOR]

The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the authors report that the electronic passivation properties of intrinsic a-Si:H/crystalline silicon (c-Si) interfaces relax following a similar law. Carrier injection dependent a-Si:H/c-Si interface recombination calculations suggest this originates from amphoteric interface state (or Si dangling bond) reduction, rather than from a field effect. These findings underline the similarity between a-Si:H/c-Si interface recombination and the electronic properties of a-Si:H bulk material. [ABSTRACT FROM AUTHOR]

The authors report that for a-Si:H/c-Si heterostructure solar cell fabrication the presence of a boron-doped a-Si:H(p+) overlayer may cause H2 effusion from a (few nanometers) thin underlying intrinsic a-Si:H(i) film at moderate temperatures. This phenomenon is in agreement with losses in the electronic passivation quality of c-Si/a-Si:H(i)/a-Si:H(p+) structures occurring during low temperature (<=260 °C) postdeposition annealing. Consequently, it is argued that such passivation degradation is due to Si–H rupture in the a-Si:H(i) film, likely resulting in Si dangling bond defects, mediated by the presence of the doped layer. [ABSTRACT FROM AUTHOR]

Intrinsic hydrogenated amorphous silicon films can yield outstanding electronic surface passivation of crystalline silicon wafers. In this letter the authors confirm that this is strongly determined by the abruptness of the interface. For completely amorphous films the passivation quality improves by annealing at temperatures up to 260 °C, most likely by film relaxation. This is different when an epitaxial layer has been grown at the interface during film deposition. Annealing is in such a case detrimental for the passivation. Consequently, the authors argue that annealing followed by carrier lifetime measurements allows determining whether the interface is abrupt. [ABSTRACT FROM AUTHOR]

Heterostructures, such as the crystalline silicon (c-Si)/plasma-enhanced chemical vapor deposited (PECVD) hydrogenated amorphous silicon (a-Si:H) structure, form a possibility in the development of a low recombination rear contact for photovoltaic devices fabricated from p-type c-Si(p) substrates. To find a good compromise between limited charge carrier recombination at the surface and a limited resistivity of the contact, a sandwich structure, such as c-Si(p)/a-Si:H(i)/a-Si:H(p+) has been proposed in the past. However, in this letter, we report that whereas a very thin intrinsic a-Si:H layer (∼3 nm) may still yield very low values for the surface recombination velocity of low resistivity (0.5–1.5 Ω cm) c-Si(p) wafers, the surface passivation properties are lost when this intrinsic film is subsequently covered by a PECVD a-Si:H(p+) layer. This phenomenon suggests that surface recombination does not take place at the c-Si(p)/a-Si:H(i) interface, but more likely in the defect-rich PECVD a-Si:H(p+) material, by tunneling of minority carriers through the thin a-Si:H(i) layer. [ABSTRACT FROM AUTHOR]

One hindrance in transparent electronics is the lack of high‐performance p‐type transparent conductors (TCs). The state‐of‐the‐art p‐type TC, CuI, has a conductivity two orders of magnitude lower than n‐type TCs like ITO. While doping strategies have shown promise in enhancing the hole carrier density in CuI, they often come at the expense of hole mobility. Therefore, understanding how extrinsic dopants affect the mobility of CuI is critical to further improve the performance of CuI‐based TCs. Here the structural and electronic properties of Cs‐doped CuI are investigated. It is demonstrated that ≈4 at.% Cs doping in CuI increases the carrier density from 2.1 × 1019 to 3.8 × 1020 cm−3 while preserving the film microstructure and local coordination of Cu, as confirmed by HRTEM and XAS analysis. Introducing S as a co‐dopant in Cs:CuI boosts the carrier density to 8.2 × 1020 cm−3, reaching a stable conductivity of ≈450 S cm−1. In all cases, the enhanced carrier density negatively affects the hole mobility with ionized impurity scattering and increased Seebeck hole effective mass as mobility limiting mechanisms. Nonetheless, the new Cs, S co‐doped CuI exhibits high p‐type conductivity, Vis–NIR transparency, and stability, presenting an attractive candidate for future transparent electronic devices. [ABSTRACT FROM AUTHOR]

Effective charge carrier‐selective contacts are a crucial component of high‐performance crystalline silicon (c‐Si) solar cells. Organic materials deposited via self‐assembly on the c‐Si surface are promising candidates for simplified, scalable, and cost‐effective processing of charge extraction layers. This study investigates the application of nPACz self‐assembled monolayers (SAMs), based on carbazole and phosphonic acid groups, where n (= 2, 4, or 6) is the aliphatic chain length, to facilitate electron extraction in c‐Si solar cells by tuning the work function of aluminum (Al) at the rear contact. So far, these SAM molecules are mainly applied as the hole‐selective layer in state‐of‐the‐art perovskite and organic solar cells, via anchoring on a metal oxide electrode. Here, by inserting 2PACz between amorphous silicon passivated c‐Si and Al, an electron‐selective contact with a contact resistivity of 65 mΩ cm2 is achieved and a power conversion efficiency of 21.4% with an open‐circuit voltage of 725 mV and a fill factor of 79.2% is demonstrated. Although the 2PACz displays some instability in this study, its initial performance is comparable to those achieved with conventionally used n‐type amorphous silicon. This study highlights the potential of solution‐processable organic SAMs in forming carrier‐selective contacts for c‐Si heterojunction solar cells. [ABSTRACT FROM AUTHOR]

The origins of parasitic heating for photovoltaic (PV) technologies based on silicon, perovskites, and their combination in monolithic tandems are investigated. To quantify heating losses, the cooling score (CS) as a new simple metric, representing the percentage of incident solar irradiance not contributing to module heating is introduced. This is a function of both the optical structure and power conversion efficiency (PCE) of the PV modules and allows a fair comparison between different technologies under identical performance‐evaluation scenarios. Silicon single‐junction devices have the lowest CS due to their low bandgap (causing significant carrier thermalization losses) and their use of light‐trapping structures to increase their PCE which also undesirably increases parasitic absorption of sub‐bandgap photons. Conversely, perovskite single‐junction devices show the highest CS in all studied performance‐evaluation scenarios thanks to their wider bandgap and high absorption coefficient, enabling absorption of all solar photons that may contribute to the photocurrent without requiring light‐trapping structures. While perovskite/silicon tandems minimize thermalization losses, they also usually employ light‐trapping structures in their bottom cell to increase their PCE, which lowers their CS. Through simulation and outdoor experiments, it is demonstrated that an efficient module‐cooling environment may significantly suppress the detrimental effects associated with a low CS. [ABSTRACT FROM AUTHOR]

The article discusses the target of achieving sustained global growth in photovoltaics (PV) of 25 percent per year over the decade of 2023-40. PVs exceeded a global installed capacity, but despite considerable growth and cost reduction over time, PV is yet a small part of global electricity generation, and the opportunity is getting reduced to take action at scale to cut greenhouse gas emissions while meeting global energy needs for the future.

Excellent amorphous/crystalline silicon interface passivation is of extreme importance for high-efficiency silicon heterojunction solar cells. This can be obtained by inserting hydrogen-plasma treatments during deposition of the amorphous silicon passivation layers. Prolonged hydrogen-plasmas lead to film etching. We report on the defect creation induced by such treatments: A severe drop in interface-passivation quality is observed when films are etched to a thickness of less than 8 nm. Detailed characterization shows that this decay is due to persistent defects created at the crystalline silicon surface. Pristine interfaces are preserved when the post-etching film thickness exceeds 8 nm, yielding high quality interface passivation. [ABSTRACT FROM AUTHOR]

The influence of halogen substitutions (F, Cl, Br, and I) on the energy levels of the self‐assembled hole‐extracting molecule [2‐(9H‐Carbazol‐9‐yl)ethyl]phosphonic acid (2PACz), is investigated. It is found that the formation of self‐assembled monolayers (SAMs) of [2‐(3,6‐Difluoro‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (F‐2PACz), [2‐(3,6‐Dichloro‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (Cl‐2PACz), [2‐(3,6‐Dibromo‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (Br‐2PACz), and [2‐(3,6‐Diiodo‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (I‐2PACz) directly on indium tin oxide (ITO) increases its work function from 4.73 eV to 5.68, 5.77, 5.82, and 5.73 eV, respectively. Combining these ITO/SAM electrodes with the ternary bulk‐heterojunction (BHJ) system PM6:PM7‐Si:BTP‐eC9 yields organic photovoltaic (OPV) cells with power conversion efficiency (PCE) in the range of 17.7%–18.5%. OPVs featuring Cl‐2PACz SAMs yield the highest PCE of 18.5%, compared to cells with F‐2PACz (17.7%), Br‐2PACz (18.0%), or I‐2PACz (18.2%). Data analysis reveals that the enhanced performance of Cl‐2PACz‐based OPVs relates to the increased hole mobility, decreased interface resistance, reduced carrier recombination, and longer carrier lifetime. Furthermore, OPVs featuring Cl‐2PACz show enhanced stability under continuous illumination compared to ITO/PEDOT:PSS‐based cells. Remarkably, the introduction of the n‐dopant benzyl viologen into the BHJ further boosted the PCE of the ITO/Cl‐2PACz cells to a maximum value of 18.9%, a record‐breaking value for SAM‐based OPVs and on par with the best‐performing OPVs reported to date. [ABSTRACT FROM AUTHOR]

If perovskite solar cells (PSCs) with high power conversion efficiencies (PCEs) are to be commercialized, they must achieve long-term stability, which is usually assessed with accelerated degradation tests. One of the persistent obstacles for PSCs has been successfully passing the damp-heat test (85°C and 85% relative humidity), which is the standard for verifying the stability of commercial photovoltaic (PV) modules. We fabricated damp heat-stable PSCs by tailoring the dimensional fragments of two-dimensional perovskite layers formed at room temperature with oleylammonium iodide molecules; these layers passivate the perovskite surface at the electron-selective contact. The resulting inverted PSCs deliver a 24.3% PCE and retain >95% of their initial value after >1000 hours at damp-heat test conditions, thereby meeting one of the critical industrial stability standards for PV modules. [ABSTRACT FROM AUTHOR]

We explore substoichiometric molybdenum trioxide (MoOx, x<3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9mA/cm² in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors. [ABSTRACT FROM AUTHOR]

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers-- inserted between substrate and (front or rear) contacts--since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation of such films as window layers--without degraded carrier collection--demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions. [ABSTRACT FROM AUTHOR]

Efficiencies of organic solar cells have practically doubled since the development of non‐fullerene acceptors (NFAs). However, generic chemical design rules for donor‐NFA combinations are still needed. Such rules are proposed by analyzing inhomogeneous electrostatic fields at the donor–acceptor interface. It is shown that an acceptor–donor–acceptor molecular architecture, and molecular alignment parallel to the interface, results in energy level bending that destabilizes the charge transfer state, thus promoting its dissociation into free charges. By analyzing a series of PCE10:NFA solar cells, with NFAs including Y6, IEICO, and ITIC, as well as their halogenated derivatives, it is suggested that the molecular quadrupole moment of ≈75 Debye Å balances the losses in the open circuit voltage and gains in charge generation efficiency. [ABSTRACT FROM AUTHOR]

Ultrathin solar cells can be a path forward to low‐cost photovoltaics due to their reduced material consumption and shorter required deposition times. With excellent surface passivation, such devices may feature higher open‐circuit voltages (VOC). However, their short‐circuit current density (JSC) may be reduced due to decreased light absorption. This mandates implementation of efficient light‐trapping structures. To design efficient ultrathin solar cells that combine surface‐passivation and light‐trapping features, accurate 3‐D modeling is necessary. To this end, a novel 3‐D optoelectrical finite‐element model is developed to analyze the performance of ultrathin solar cells. The model is applied to the case of ultrathin (<500 nm) chalcogenide solar cells (copper indium gallium (di) selenide, CIGSe), rear‐passivated with nanostructured Al2O3 to circumvent optical and electrical losses. It is found that such a nanopatterned dielectric passivation scheme enhances broadband light‐trapping with reduced rear‐surface recombination, resulting in an absolute power conversion efficiency enhancement of 3.9%, compared to cells without passivation structure. Overall, the work shows how 3‐D finite element modeling can aid in analyzing and developing new optical and electrical solar cell designs for ultrathin solar cells such as those based on chalcogenides and perovskites. [ABSTRACT FROM AUTHOR]

Sputtered nickel oxide (NiOx) is an attractive hole‐transport layer for efficient, stable, and large‐area p‐i‐n metal‐halide perovskite solar cells (PSCs). However, surface traps and undesirable chemical reactions at the NiOx/perovskite interface are limiting the performance of NiOx‐based PSCs. To address these issues simultaneously, an efficient NiOx/perovskite interface passivation strategy by using an organometallic dye molecule (N719) is reported. This molecule concurrently passivates NiOx and perovskite surface traps, and facilitates charge transport. Consequently, the power conversion efficiency (PCE) of single‐junction p‐i‐n PSCs increases from 17.3% to 20.4% (the highest reported value for sputtered‐NiOx based PSCs). Notably, the N719 molecule self‐anchors and conformally covers NiOx films deposited on complex surfaces. This enables highly efficient textured monolithic p‐i‐n perovskite/silicon tandem solar cells, reaching PCEs up to 26.2% (23.5% without dye passivation) with a high processing yield. The N719 layer also forms a barrier that prevents undesirable chemical reactions at the NiOx/perovskite interface, significantly improving device stability. These findings provide critical insights for improved passivation of the NiOx/perovskite interface, and the fabrication of highly efficient, robust, and large‐area perovskite‐based optoelectronic devices. [ABSTRACT FROM AUTHOR]

Advancing non‐fullerene acceptor (NFA) organic photovoltaics requires the mitigation of the efficiency‐limiting processes. Acceptor end‐group and side‐chain engineering are two handles to tune properties, and a better understanding of their specific impact on the photophysics could facilitate a more guided acceptor design. Here, the device performance, energetic landscape, and photophysics of rhodanine and dicyanovinyl end‐capped IDT‐based NFAs, namely, O‐IDTBR and O‐IDTBCN, in PCE10‐based solar cells are compared by transient optical and electro‐optical spectroscopy techniques and density functional theory calculations. It is revealed how the acceptors' quadrupole moments affect the interfacial energetic landscape, in turn causing differences in exciton quenching, charge dissociation efficiencies, and geminate versus non‐geminate recombination losses. More precisely, it is found that the open circuit voltage (VOC) is controlled by the acceptors' electron affinity (EA), while geminate and non‐geminate recombination, and the field dependence of charge generation, rely on the acceptors' quadrupole moments. The kinetic parameters and yields of all processes are determined, and it is demonstrated that they can reproduce the performance differences of the devices' current–voltage characteristics in carrier drift‐diffusion simulations. The results provide insight into the impact of the energetic landscape, specifically the role of the quadrupole moment of the acceptor, beyond trivial considerations of the donor–acceptor energy offsets. [ABSTRACT FROM AUTHOR]

Monolithically stacked tandem solar cells present opportunities to absorb more of the sun's radiation while reducing the degree of energetic loss through thermalization. In these applications, the bandgap of the tandem's constituent subcells must be carefully adjusted so as to avoid competition for photons. Organic photovoltaics based on nonfullerene acceptors (NFAs) have recently exploded in popularity owing to the ease with which their electrical and optical properties can be tuned through chemistry. Here, highly complementary and efficient 2‐terminal tandem solar cells are reported based on a wide bandgap amorphous silicon absorber, and a narrow bandgap NFA bulk‐heterojunction with power conversion efficiencies (PCEs) exceeding 15%. Interface engineering of this tandem device allows for high PCEs across a wide range of light intensities both above and below "1 sun." Furthermore, the addition of an inorganic silicon subcell enhances the operational stability of the tandem by reducing the light‐stress experienced by the bulk heterojunction, resolving a long‐standing stumbling block in organic photovoltaic research. [ABSTRACT FROM AUTHOR]

Slot‐die coating is highly promising for scaled deposition of metal halide perovskite thin films. However, the power conversion efficiencies (PCEs) of slot‐die‐prepared perovskite solar cells (PSCs) still lag behind their spin‐casted counterparts. To resolve this issue, the crystal size and quality of slot‐die‐coated methylammonium lead triiodide (MAPbI3) perovskite films are dramatically improved via additive engineering using potassium thiocyanate (KSCN). The modified micrometer‐thick films have an average grain size of ≈11 μm and charge‐carrier parameters that are comparable with single‐crystal perovskites, such as a 1.89 μs lifetime, 136.65 ± 31.52 cm2 V−1 s−1 mobility, and 25.15 ± 3.55 μm diffusion length. Exploiting these enhanced properties, planar inverted PSCs with negligible hysteresis are fabricated and an average and a maximum PCE of 20.14% and 21.38%, respectively, are achieved which are among the highest reported values for slot‐die‐coated PSCs. Notably, our devices have a narrow PCE distribution along the slot‐die coating axis, highlighting slot‐die coating's promise to fabricate large‐scale, high‐performance PSCs. [ABSTRACT FROM AUTHOR]

Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasmaenhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material. [ABSTRACT FROM AUTHOR]

Sputtered transparent conducting oxides (TCOs) are widely accepted transparent electrodes for several types of high‐efficiency solar cells. However, the different sputtering yield of atoms makes stoichiometric transfer of target material challenging for multi‐compounds. Additionally, the high kinetic energies of the arriving species may damage sensitive functional layers beneath. Conversely, pulsed laser deposition (PLD) is operated at higher deposition pressures promoting thermalization of particles. This leads to stoichiometric transfer and additionally reduces the kinetic energy of ablated species. Despite these advantages, PLD is rarely used within the photovoltaic community due to concerns about low deposition rates and the scalability of the technique. In this study, wafer‐scale (4‐inch) PLD of high‐mobility Zr‐doped In2O3 (IZrO) TCO for solar cells is demonstrated. IZrO films are grown at room temperature with deposition rate on par with RF‐sputtering (>4 nm min−1). As‐deposited IZrO films are mostly amorphous and exhibit excellent optoelectronic properties after solid phase crystallization at <200 °C. 100‐nm thick films feature a sheet resistance of 21 Ω◻−1 with electron mobilities ≈70 cm2 V−1s−1. PLD‐grown IZrO is applied as rear electrode in efficient semi‐transparent halide perovskite solar cells leading to the improved stabilized maximum power point efficiency (15.1%) as compared to the cells with sputtered ITO electrodes (11.9%). [ABSTRACT FROM AUTHOR]

The article focuses on the progress of perovskite/silicon tandem solar cells towards commercialization, highlighting advances in laboratory-scale performance, various device configurations, and the challenges of scaling up the manufacturing process. It emphasizes the need for improving stability, addressing material and sustainability considerations, and conducting rigorous testing to ensure the commercial viability and bankability of perovskite/silicon tandem technologies.

In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm² due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit voltages can be maintained, thanks to good interface passivation. However, we find that the gain in current is more than offset by losses in fill factor. Aided by device simulations, we link these losses to impeded carrier collection fundamentally caused by the increased valence band offset at the amorphous/crystalline interface. Despite this, carrier extraction can be improved by raising the temperature; we find that cells with amorphous silicon oxide window layers show an even lower temperature coefficient than reference heterojunction solar cells (-0.1%/°C relative drop in efficiency, compared to -0.3%/°C). Hence, even though cells with oxide layers do not outperform cells with the standard design at room temperature, at higher temperatures--which are closer to the real working conditions encountered in the field--they show superior performance in both experiment and simulation. [ABSTRACT FROM AUTHOR]

Defects at the surface and grain boundaries of metal–halide perovskite films lead to performance losses of perovskite solar cells (PSCs). Here, organic cyano‐based π‐conjugated molecules composed of indacenodithieno[3,2‐b]thiophene (IDTT) are reported and it is found that their cyano group can effectively passivate such defects. To achieve a homogeneous distribution, these molecules are dissolved in the antisolvent, used to initiate the perovskite crystallization. It is found that these molecules are self‐anchored at the grain boundaries due to their strong binding to undercoordinated Pb2+. On a device level, this passivation scheme enhances the charge separation and transport at the grain boundaries due to the well‐matched energetic levels between the passivant and the perovskite. Consequently, these benefits contribute directly to the achievement of power conversion efficiencies as high as 21.2%, as well as the improved environmental and thermal stability of the PSCs. The surface treatment provides a new strategy to simultaneously passivate defects and enhance charge extraction/transport at the device interface by manipulating the anchoring groups of the molecules. [ABSTRACT FROM AUTHOR]

Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%. [ABSTRACT FROM AUTHOR]

We investigate the performance of hydrogenated indium oxide as a transparent front electrode for micromorph thin-film silicon solar cells on glass. Light trapping is achieved by replicating the morphology of state-of-the-art zinc oxide electrodes, known for their outstanding light trapping properties, via ultraviolet nanoimprint lithography. As a result of the high electron mobility and excellent near-infrared transparency of hydrogenated indium oxide, the short-circuit current density of the cells is improved with respect to indium tin oxide and zinc oxide electrodes. We assess the potential for further current gains by identifying remaining sources of parasitic absorption and evaluate the light trapping capacity of each electrode. We further present a method, based on nonabsorbing insulating silicon nitride electrodes, allowing one to directly relate the optical reflectance to the external quantum efficiency. Our method provides a useful experimental tool to evaluate the light trapping potential of novel photonic nanostructures by a simple optical reflectance measurement, avoiding complications with electrical cell performance. [ABSTRACT FROM AUTHOR]

Passivating metal/silicon contacts combine low carrier recombination with low contact resistivities, enabled by a low gap state density at their interface. Such contacts find applications in high-efficiency solar cells. We perform first-principles calculations based on density functional theory to investigate the surface defect and metal-induced gap state density of silicon in close contact with metals (Al and Ag). We confirm that surface hydrogenation fully removes surface-defect gap states of (111)-oriented silicon surfaces. However, the metal-induced gap state density increases significantly when metals are closer than 0.5 nm to such surfaces. These results highlight the importance of the tunneling-film thickness in achieving effective passivating-contact formation. [ABSTRACT FROM AUTHOR]

Perovskite single-junction devices show highest CS, followed by perovskite/silicon tandems. Cooling score, parasitic heating, perovskites, silicon, tandem Keywords: cooling score; parasitic heating; perovskites; silicon; tandem EN cooling score parasitic heating perovskites silicon tandem 1 1 1 06/27/23 20230623 NES 230623 B Cooling Score b In article number 2300013, Lujia Xu, Stefaan De Wolf, and co-workers introduce the cooling score (CS) to quantify parasitic heating for photovoltaic technologies. [Extracted from the article]

Abstract: Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices. [ABSTRACT FROM AUTHOR]

Abstract: Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next‐generation photovoltaics with performance beyond the single‐junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium‐based perovskite top cell, this leads to tandem cell power‐conversion efficiencies of up to 22.7% obtained from J–V measurements and steady‐state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady‐state efficiency of 18%. [ABSTRACT FROM AUTHOR]

[Display omitted] • Spiral microstructures were designed to enhance mass transfer by forced vortex. • Li extraction rate was greatly increased by the spiral-microstructured reactor. • An off-grid solar power system was demonstrated to drive the SMER to extract Li. • TEA results show a production cost of $28.55/kg, well below market price ($70.99/kg). Electrochemical lithium (Li) extraction from low-grade salt lake brine, when powered by off-grid renewables, represents a potential approach to meeting the substantially increasing demand for battery-grade Li 2 CO 3. However, this technology has been drastically challenged by the low extraction rate and high production cost, largely due to the lack of research on reactor engineering and system scale-out. Herein, we rationally designed a scalable spiral-microstructured electrochemical reactor (SMER) to accomplish ultrafast and economical Li extraction under harsh brine conditions by virtue of significantly accelerated mass transfer. We showcased that the SMER was stably operated at a Li extraction rate over 5.6 times as much as that of state-of-art devices, and could be up-scaled for commercial production of battery-grade Li 2 CO 3 driven by solar cells. This work lays the ground for sustainable Li extraction from remote low-grade salt lake brine and can be readily applied to more minable Li reserves/resources. [ABSTRACT FROM AUTHOR]

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiO x) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiO x passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiO x contacts, allowing for the application of the Ca/TiO x contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiO x contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiO x interlayer. [ABSTRACT FROM AUTHOR]

Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance. [ABSTRACT FROM AUTHOR]

Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells. [ABSTRACT FROM AUTHOR]

The article focuses on the growth of solar energy and photovoltaic (PV) systems. It states that it is expected that PV capacity will reach the terawatt (TW) scale by 2023 and by 2030 may be generating between three and 10 TW of PV. It mentions costs per watt for PV systems has reached 25 cents as of the end of 2018 and is cost competitive with fossil fuel electricity generation. It comments on energy storage innovations and the decrease in the price of lithium-ion batteries from 2010 to 2018.

The fundamental sheet conductance of graphene can be directly related to the product of its absorption coefficient, thickness and refractive index. The same can be done for graphene's fundamental opacity if the so-called thin-film limit is considered. Here, we test mathematically and experimentally the validity of this limit on graphene, as well as on thin metal and semiconductor layers. Notably, within this limit, all measurable properties depend only on the product of the absorption coefficient, thickness, and refractive index. As a direct consequence, the absorptance of graphene depends on the refractive indices of the surrounding media. This explains the difficulty in determining separately the optical constants of graphene and their widely varying values found in literature so far. Finally, our results allow an accurate estimation of the potential optical losses or gains when graphene is used for various optoelectronic applications. [ABSTRACT FROM AUTHOR]

Low-resistance contact to lightly doped n-type crystalline silicon (c-Si) has long been recognized as technologically challenging due to the pervasive Fermi-level pinning effect. This has hindered the development of certain devices such as n-type c-Si solar cells made with partial rear contacts (PRC) directly to the lowly doped c-Si wafer. Here, a simple and robust process is demonstrated for achieving mΩ cm2 scale contact resistivities on lightly doped n-type c-Si via a lithium fluoride/aluminum contact. The realization of this low-resistance contact enables the fabrication of a first-of-its-kind high-efficiency n-type PRC solar cell. The electron contact of this cell is made to less than 1% of the rear surface area, reducing the impact of contact recombination and optical losses, permitting a power conversion efficiency of greater than 20% in the initial proof-of-concept stage. The implementation of the LiF x/Al contact mitigates the need for the costly high-temperature phosphorus diffusion, typically implemented in such a cell design to nullify the issue of Fermi level pinning at the electron contact. The timing of this demonstration is significant, given the ongoing transition from p-type to n-type c-Si solar cell architectures, together with the increased adoption of advanced PRC device structures within the c-Si photovoltaic industry. [ABSTRACT FROM AUTHOR]

We report and explain the photoluminescence (PL) spectra from crystalline silicon (c-Si) wafers passivated by hydrogenated amorphous silicon (a-Si:H) films under various measurement conditions, utilizing the different absorption coefficients and radiative recombination mechanisms in c-Si and a-Si:H. By comparison with the luminescence properties of a-Si:H, we also demonstrate that SiN x films deposited under certain silicon-rich conditions yield luminescence spectra similar to those of a-Si:H, indicating the presence of an a-Si:H-like phase in the SiN x films. This causes a reduction in the blue response of the solar cells via parasitic absorption. In addition, with the ability to detect the specific emission from heavily-doped silicon via band-gap narrowing effects, we can unambiguously separate individual spectral PL signatures of three different layers in a single substrate: the SiN x passivation films, the diffused layers, and the underlying c-Si substrate. Finally, we apply this technique to evaluate parasitic absorption in the passivation films, and the doping density of the diffused layers on different finished solar cells, highlighting the value of this nondestructive contactless, micron-scale technique for photovoltaic applications. [ABSTRACT FROM AUTHOR]

Due to their high efficiencies combined with simple and cost-effective device fabrication, perovskite solar cells are promising candidates as top cells in tandem devices. For this application, the perovskite solar cell must be highly transparent at near-infrared wavelengths such that sufficient light is transmitted to the narrow-bandgap bottom cell. We demonstrate perovskite solar cells featuring a sputtered amorphous indium zinc oxide (IZO) layer as broadband transparent rear electrode. This electrode absorbs less than 3% in the 400–1200 nm wavelength range, while having a sheet resistance of 35 Ω / sq . We show over 9% efficient semitransparent perovskite solar cells with IZO sputtered directly on the sensitive organic charge transport layer. The efficiency can be raised up to 10.3% by inserting a thin molybdenum oxide buffer layer, mitigating sputter damage to the underlying organic layer. These cells show more than 60% average transmittance in the 800–1200 nm wavelength range, which makes them suitable top-cell candidates for tandem devices. Finally, we discuss the performance potential of this highly transparent rear electrode for four-terminal tandem devices. [ABSTRACT FROM AUTHOR]

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130°C--often needed for the curing of printed metal contacts-- detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%. [ABSTRACT FROM AUTHOR]