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The third harmonic generation technique is employed to explain the results of the third order nonlinear optical susceptibilities of various doped and undoped zinc oxide films. The results show that the conversion of the third harmonic signal at different dopants and at an appropriate concentration takes place due to the high conductivity, morphology and the crystalline quality of the films.

The fictive temperature (T(sub f) ) and fluorine concentration dependence of structure fluctuation in SiO2 glass were investigated by small-angle x-ray scattering measurement, in this study. It was found that density fluctuation solely contributes to the T(sub f) dependence of structure fluctuation.

Ab initio calculations are used for showing possible ways to band gap engineering in the -oriented silicon nanowires with a diameter of about 1.5 nm and terminated by hydrogen, oxygen, fluorine, and hydroxyl. The role of different terminating functional groups in the photoluminescence process from porous silicon, which is considered as an ensemble of nanowires, is also discussed.

The formation of self-assembling nanoscale fibrillar aggregates from a hybrid system comprising a short polypeptide conjugated to the fluorophore fluorene is described. This method is used to drive the assembly of a wide range of guests, which has offered the development of a variety of useful, smart nanomaterials that are able to self-assemble in a controllable and robust fashion.

Femtosecond transient absorption spectroscopy of amino-nitro-fluorenes in the ultraviolet (UV)-visible range has shown that the dynamic Stokes shift of the emission band is sensitive to infrared-active modes of the solvent. The solvatochromic plots have differed significantly from those that use peak positions of absorption spectra and fluorescence quantum distributions.

A positron annihilation method is used for studying the vacancy-fluorine complexes in metal-oxide semiconductors (MOS) with high-k gate dielectrics. The origin of the threshold voltage ([V.sub.th]) shift in the MOS capacitors is attributed to vacancy-fluorine complexes ([V.sub.3][F.sub.2]) located in channel regions.

The fluorine effect on transient-enhanced diffusion (TED) and the dose loss of boron during the 750 degree Celsius annealing is presented. The F postimplantation effect on boron diffusion is investigated in the dose range between 1x10(super 13)/cm(super 2) and 6x10(super 14)/cm(super 2) without a preamorphizing implant (PAI).

The operation of a liquid polymer jet laser-plasma target and the characterization of the absolute x-ray emission in the extreme ultraviolet wavelength window from 9-19 nm are reported. The target is a liquid polymer that is exposed to pulsed and focused laser light at 532 nm in the form of a thin, liquid microjet in vacuum.

An examination is done of anisotropic optical properties of vacuum-deposited thin films of high-efficiency blue-emitting ter(9,9-diarylfluorene)s using variable-angle spectroscopic ellipsometry. It is inferred that the vacuum-deposited ter(9,9-diarylfluorene) molecules tend to align their molecular axes and pi-pi* transition dipole moments along the substrate surface as noticed in spin-coated films of alkyl-substituted polyfluorenes or oligofluorenes, even though the present ter (9,9-diarylfluorene)s have rigid and bulky aryl substituents on C9, relatively shorter oligomer chains, and very different deposition conditions.

Kinetic studies of fluorine and deuterium atoms that interact with OiR 897 10i i-line photoresist (PR) are reported. With this a diffusion-limited growth model is formulated and model parameters are found consistent with values reported in related systems.

Studies are conducted and comparisons are drawn of ablation plumes arising after irradiation of graphite, silicon, copper and aluminum with a pulsed nanosecond ArF(lambda = 193 nm) laser at fluences between 2 and 20 Jcm(super -2) in vacuum. Results indicate that the highest degree of incident laser intensity is at the outer edge of the expanding plume.

The effects of fluorine (F) doping on silica glass structure, structural relaxation and vacuum ultraviolet (VUV) absorption edge are measured with infrared (IR) and VUV absorption. Two factors control the (VUV) absorption edge of F-doped silica glass.