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1. A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

28. La gouvernance des communautés d'experts chez STMicroelectronics

29. La société proto-épistémique: organiser le renouvellement des communautés d'experts pour l'innovation de rupture

30. Design methodology of a 28 nm FD-SOI Capacitive Feedback RF LNA based on the ACM Model and Look-up Tables

34. 28 nm UTBB FD-SOI technology for Silicon-based quantum dots and Cryo-CMOSelectronics

35. Electrostatics and channel coupling on 28 nm FD-SOIfor cryogenic applications

38. Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications

39. Ultra-thin body buried oxide 28nm FD-SOI platform for silicon quantum dots

40. UTBB FD-SOI Technology for Silicon-based Quantum Dots and Cryo-CMOS Electronics

41. Reliability of Z2-FET

43. Capacitorless memory devices using virtual junctions

47. Z²-FET as capacitor-less eDRAM cell for high-density integration

48. Extended analysis of the Z²-FET: operation as capacitorless eDRAM

49. Z2-FET memory for low power applications

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