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Two dimensional (2D) materials have generated enormous interest in various research fields in recent years due to their fascinating properties, such as atomic thickness, distinct structures and superior characteristics. In particular, electronic and optoelectronic devices based on 2D materials have been widely investigated, which is promising for the innovation of future nanoelectronics technology. Recently, the technique of laser processing 2D materials with the advantages of facile operation, versatility and low cost has been reported to enable the fabrication of diverse 2D material electronic and optoelectronic devices, such as field-effect transistors (FETs), p–n junction diodes, bipolar junction transistors (BJTs), inverters, memory devices, photodetectors, photovoltaic devices and light-emitting devices. Here, various interactions between lasers and 2D materials are introduced, such as direct writing processing, reduction, doping, phase transition engineering, thinning, oxidation and creating defects. The current advances in laser processing-assisted 2D material electronic and optoelectronic devices are reviewed. A comprehensive outlook on the future development of 2D material nanoelectronics/optoelectronics via laser processing is also presented.

Applied strain introduces significant changes in the carbon–carbon bond of graphene and thereby forms electronic superlattices. The electron/phonon coupling and existence of pseudogauge fields within these superlattices render unique electronic and magnetism properties. However, the interfacial interactions between strained and pristine graphene have rarely been studied. Herein, we report a prominent increase in photocurrent at the interface between pristine graphene and the strain-induced superlattice (i.e., the graphene wrinkle). The photocurrent distribution indicates a large increase in the bending lattice of graphene. These results demonstrate that the photocurrent enhancement is due to the difference in the Seebeck coefficient between pristine graphene and deformed superlattices, resulting in a significant increase in the photo­thermo­electric effect at the interface.

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.

Highly stable nanopores with precise size and film thickness are essential for ultrasensitive molecular biosensors and efficient ion filters. However, the stability of both solid-state nanopores and biological nanopores is of a few hours. Even for two-dimensional (2D) materials with excellent properties, it is very difficult to prepare nanopores with stability for more than 1 day. Here, in mechanically exfoliated 2D materials with excellent quality, highly stable nanopores have been fabricated. Through the manual control of defect density and laser spot irradiation, the breakdown process is more controllable. The nanopore diameter can be precisely adjusted from 1 to 10 nm. The 2 nm thick graphene nanopore (with a diameter of 2 nm) maintains good consistency in conductivity during the 1-month immersion in KCl (1 M) solution. The pore size changes less than 0.7% per day. We found that 2D material nanopores can produce a strong rectification ratio (∼50) due to the morphology undulation. In addition, our devices can recognize modified 5 nm Au nanoparticles, showing great potential for single-molecule detection. This work can guide the development of high-quality ion rectifier devices and biosensors based on 2D material nanopores.

Background Insufficient thermal ablation can cause accelerated malignant behaviors and increased metastasis in hepatocellular carcinoma (HCC), and epithelial-mesenchymal transition (EMT) and autophagy are implicated in tumor metastasis. However, whether interactions between autophagy and TGF-β2 induce EMT in breast cancer (BC) after insufficient microwave ablation (MWA) remains unclear. Methods In this study, we treated BC cells with sublethal heat treatment for simulating insufficient MWA, and then the effect of heat treatment on the BC cell phenotypes were explored. CCK-8, colony formation, flow cytometry, transwell and wound healing assays were performed to evaluate the influence of sublethal heat treatment on the proliferation, apoptosis, invasion and migration of BC cells treated with/without autophagy inhibitors. Western blotting, real-time quantitative PCR, immunofluorescence and transmission electron microscopy were carried out to determine the changes of markers associated with autophagy and EMT after sublethal heat treatment. Xenograft models in mice were established by using sublethal heat treated BC cells to investigate the effect of autophagy inhibitor on BC tumor growth in vivo. Results Results showed that heat treatment promoted the proliferation of survived BC cells, which was accompanied by autophagy induction. Heat treatment-induced autophagy up-regulated TGF-β2/Smad2 signaling and promoted phenotype of EMT, thereby enhancing abilities of migration and invasion in BC cells. Increase or decrease of TGF-β2 expression resulted in potentiation and suppression of autophagy as well as enhancement and abatement of EMT. Autophagy inhibitor facilitated apoptosis and repressed proliferation of BC cells in vitro, and thwarted BC cell tumor growth and pulmonary metastasis in vivo. Conclusions This study indicate that heat treatment-induced autophagy promotes invasion and metastasis via TGF-β2/Smad2-mediated EMT. Suppressing autophagy might be a new strategy for overcoming sufficient MWA caused progression and metastasis of residual BC cells.

Black phosphorus (BP) is a typical two-dimensional (2D) layered material with strong in-plane anisotropy and large birefringence, making it possible to manipulate the light field with atomically controlled devices for various optoelectronic and photonic applications-for instance, atomic thickness waveplates. The twist angle in twisted black phosphorus (TBP) can be presented as a new tunable dimension to control BP's optical anisotropy. Here, we report a large and tunable optical rotation effect in TBP, the result of regulating the twist angle and BP thickness. To accurately study the optical rotation and the impact of the twist angle, we developed a new method to prepare TBP. A lab-made polarimeter microscope was used to visualize the optical rotation mapping of TBP. A large polarization-plane rotation (PORA) of 0.49° per atomic layer was observed from an air/BP/SiO2/Si Fabry-Perot cavity at 600 nm, an order of magnitude higher than the PORA of 0.05° per atomic layer reported earlier. For the same thickness, the PORA of TBP can be tuned from 0.48° to 7.75° based on the twist angle from 0° to 90°. Our work provides an efficient method to investigate the anisotropy of 2D materials and their heterojunctions. TBP could help us design novel optical and optoelectronic devices such as tunable nanoscale polarization controllers.

Achieving multifunctional van der Waals nanoelectronic devices on one structure is essential for the integration of 2D materials; however, it involves complex architectural designs and manufacturing processes. Herein, a facile, fast, and versatile laser direct write micro/nanoprocessing to fabricate diode, NPN (PNP) bipolar junction transistor (BJT) simultaneously based on a pre-fabricated black phosphorus/molybdenum disulfide heterostructure is demonstrated. The PN junctions exhibit good diode rectification behavior. Due to different carrier concentrations of BP and MoS2 , the NPN BJT, with a narrower base width, renders better performance than the PNP BJT. Furthermore, the current gain can be modulated efficiently through laser writing tunable base width WB , which is consistent with the theoretical results. The maximum gain for NPN and PNP is found to be ≈41 (@WB ≈600 nm) and ≈12 (@WB ≈600 nm), respectively. In addition, this laser write processing technique also can be utilized to realize multifunctional WSe2 /MoS2 heterostructure device. The current work demonstrates a novel, cost-effective, and universal method to fabricate multifunctional nanoelectronic devices. The proposed approach exhibits promise for large-scale integrated circuits based on 2D heterostructures.

van der Waals p-n heterostructures based on p-type black phosphorus (BP) integrated with other two-dimensional (2D) layered materials have shown potential applications in electronic and optoelectronic devices, including logic rectifiers and polarization-sensitive photodetectors. However, the engineering of carriers transport anisotropy, which is related to the linear dichroism, have not yet been investigated. Here, we demonstrate a novel van der Waals device of orientation-perpendicular BP homojunction based on the anisotropic band structures between the armchair and zigzag directions. The structure exhibits good gate-tunable diode-like rectification characteristics caused by the barrier between the two perpendicular crystal orientations. Moreover, we demonstrate that the unique mechanisms of the polarization-sensitivity properties of this junction are involved with the linear dichroism and the anisotropic carriers transport engineering. These results were verified by the scanning photocurrent images experiments. This work paves the way for 2D anisotropic layered materials for next-generation electronic and optoelectronic devices.

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS

The substrate effect is an important issue in the properties of two-dimensional transition metal dichalcogenides (2D TMDs). Quantitatively determining the dependence of the photoluminescence (PL) emission properties and the excitonic behavior of single-layer 2D materials in a specific dielectric environment would provide helpful guidance for the rational design of substrates for high performance 2D TMD PL emission devices. Here, using a WSe2 monolayer on different substrates as a model system, it is demonstrated that the PL emission intensities can drastically change depending on the substrate effect. From the analysis of the excitonic behavior, the results reveal that the spectral weight between the neutral and charged excitons in the PL spectra is significantly modified by the substrate types, and the weight factor is dependent on the laser excitation density. The charged exciton binding energy is obviously negatively related to the substrate dielectric constant. Furthermore, the change trends of the binding energy of the monolayer WSe2 on different substrates are basically the same for the increase of the excitation density. These results suggest that the choice of the substrate plays a significant role in the modulation of the PL properties and exciton states of atomically thin WSe2; hence, substrate engineering should be carefully considered in the design of future 2D devices.