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1. Influence de la stratégie de régulation digitale des courants sur les performances de la commande vectorielle indirecte de la machine asynchrone

Author

HEI Ecole des Hautes Etudes d'Ingénieur (Lille, France) - L2EP Laboratoire d'Electrotechnique et d'Electronique de Puissance de Lille, HISPANO SUIZA Groupe SAFRAN - Département d'expertise en électronique de puissance, UCL - FSA/ELEC - Département d'électricité, UCL - SST/IMMC/MEED - Mechatronic, Electrical Energy, and Dynamics Systems, Robyns, Benoît, Meuret, Régis, Sente, Paul, HEI Ecole des Hautes Etudes d'Ingénieur (Lille, France) - L2EP Laboratoire d'Electrotechnique et d'Electronique de Puissance de Lille, HISPANO SUIZA Groupe SAFRAN - Département d'expertise en électronique de puissance, UCL - FSA/ELEC - Département d'électricité, UCL - SST/IMMC/MEED - Mechatronic, Electrical Energy, and Dynamics Systems, Robyns, Benoît, Meuret, Régis, and Sente, Paul

Abstract

Le but de cet article est de montrer, théoriquement et expérimentalement, l'influence de la stratégie de régulation des courants sur la sensibilité paramétrique de la commande du flux dans la commande vectorielle indirecte. Les résultats déduits d'une analyse théorique de la sensibilité paramétrique, prenant en compte la saturation magnétique, ont été confirmés par des essais expérimentaux et ont déjà été exploités dans une application industrielle.

Published
2002

7. Optimization of Profile Modifications With Regard to Dynamic Tooth Loads in Single and Double-Helical Planetary Gears With Flexible Ring-Gears

Author

M. Chapron, Philippe Velex, Jérôme Bruyère, Samuel Raymond Germain Becquerelle, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Hispano Suiza, and HISPANO SUIZA

Subjects
Engineering, business.product_category, Mechanical engineering, 02 engineering and technology, profile modification, 01 natural sciences, Herringbone gear, Non-circular gear, 0203 mechanical engineering, flexible ring-gear, [PHYS.MECA.SOLID]Physics [physics]/Mechanics [physics]/Solid mechanics [physics.class-ph], 0103 physical sciences, medicine, Sensitivity (control systems), 010301 acoustics, planetary gear, Coupling, business.industry, Spiral bevel gear, Mechanical Engineering, Stiffness, Equations of motion, double-helical gear, Structural engineering, Physics::Classical Physics, Computer Graphics and Computer-Aided Design, Computer Science Applications, helical gear, 020303 mechanical engineering & transports, Mechanics of Materials, medicine.symptom, business, optimization, Beam (structure)
Abstract

International audience; This paper is mostly aimed at analyzing optimum profile modifications (PMs) in planetarygears (PGTs) with regard to dynamic mesh forces. To this end, a dynamic model is presentedbased on 3D two-node gear elements connected to deformable ring-gears discretized into beam elements. Double-helical gears are simulated as two gear elements of opposite hands which are linked by shaft elements. Symmetric tip relief on external and internal gear meshes are introduced as time-varying normal deviations along the lines of contact and time-varying mesh stiffness functions are deduced from Wrinckler foundation models. The equations of motion are solved by coupling a Newmark time-step integration scheme and a contact algo-rithm to account for possible partial or total contact losses. Symmetric linear PMs for helical and double-helical PGTs are optimized by using a genetic algorithm with the objective of minimizing dynamic tooth loads over a speed range. Finally, the sensitivity of these optimum PMs to speed and load is analyzed.

Published
2015
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8. On optimum tooth profile modification to minimize dynamic mesh forces in planetary gears

Author

Matthieu, Chapron, Bruyère, Jérôme, Velex, Philippe, Becquerelle, Samuel, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Hispano Suiza, HISPANO SUIZA, and Bruyère, Jérôme

Subjects
[PHYS.MECA.SOLID] Physics [physics]/Mechanics [physics]/Solid mechanics [physics.class-ph], [PHYS.MECA.SOLID]Physics [physics]/Mechanics [physics]/Solid mechanics [physics.class-ph], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

9. Analyse de la répartition des pertes de puissance dans un réducteur épicycloïdal, en utilisant la méthode des réseaux thermiques

Author

Jérôme Durand de Gevigney, Christophe Changenet, Fabrice VILLE, Philippe Velex, Samuel Becquerelle, Association Française de Mécanique, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Hispano Suiza, HISPANO SUIZA, LabECAM, ECAM Lyon (ECAM Lyon), CFM, Service irevues, irevues, and Ville, Fabrice

Subjects
réducteur épicycloïdal, pertes de puissance, [PHYS.MECA]Physics [physics]/Mechanics [physics], [PHYS.MECA] Physics [physics]/Mechanics [physics], [SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph], transferts thermiques, [SPI.MECA] Engineering Sciences [physics]/Mechanics [physics.med-ph], ComputingMilieux_MISCELLANEOUS
Abstract

Colloque avec actes et comité de lecture. Internationale.; International audience; Dans cette étude, une méthode originale pour analyser la répartition des pertes de puissance dans un réducteur épicycloïdal est présentée. Elle est basée sur le couplage fort entre le rendement d'une transmission et son comportement thermique. Ce modèle est utilisé pour analyser les résultats expérimentaux obtenus à l'aide d'un banc d'essai. Dans le cas du réducteur épicycloïdal testé, les résultats montrent que les pertes de puissance indépendantes de la charge produites par la transmission sont majoritairement dues aux pertes hydrodynamiques générées dans les roulements des satellites et que les effets de ventilation sont négligeables.

Published
2015

10. Modélisation de la fatigue pour la nitruration gazeuse : méthodologie

Author

Hadrien Weil, Sébastien Jégou, Laurent Barrallier, Alice Courleux, Guillaume Beck, Mechanics surfaces and materials processing (MSMP), Arts et Métiers Sciences et Technologies, HESAM Université (HESAM)-HESAM Université (HESAM), Hispano-Suiza, Groupe SAFRAN, Groupe Safran, and Thèse CIFRE, Hispano-Suiza, Grupe Safran

Subjects
nitruration, modélisation, fatigue, Matériaux [Sciences de l'ingénieur], [SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph], nitruration, fatigue, Mécanique: Mécanique des matériaux [Sciences de l'ingénieur], modélisation, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

Le but de cette étude est de mettre en place un modèle de calcul en fatigue prenant en compte les caractéristiques mécaniques d’un matériau nitruré. Le travail est réalisé sur acier de nuance 32CrMoV13 utilisé dans la conception de pignon de transmission de puissance par Hispano-Suiza. Thèse CIFRE, Hispano-Suiza, Grupe Safran

Published
2015

11. Thermal investigations on scuffing using a twin-disc machine

Author

Isaac Grégoire, Fabrice VILLE, Christophe Changenet, Jérôme Cavoret, Samuel Becquerelle, Ville, Fabrice, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), LabECAM, ECAM Lyon (ECAM Lyon), Hispano Suiza, HISPANO SUIZA, and STLE

Subjects
[SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph], [SPI.MECA] Engineering Sciences [physics]/Mechanics [physics.med-ph], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

12. OPTIMIZATION OF PROFILE MODIFICATIONS WITH REGARD TO DYNAMIC TOOTH LOADS IN PLANETARY GEARS WITH FLEXIBLE RING-GEARS

Author

Matthieu, Chapron, Becquerelle, Samuel, Velex, Philippe, Bruyère, Jérôme, Bruyère, Jérôme, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Hispano Suiza, and HISPANO SUIZA

Subjects
helical gear, [PHYS.MECA.SOLID] Physics [physics]/Mechanics [physics]/Solid mechanics [physics.class-ph], flexible ring-gear, [PHYS.MECA.SOLID]Physics [physics]/Mechanics [physics]/Solid mechanics [physics.class-ph], double-helical gear, profile modification, optimization, planetary gear
Abstract

International audience; This paper deals with the optimization of tooth profile modifications in planetary gears. A dynamic model is proposed based on 3D two-node gear elements connected to a deformable ring-gear discretized into beam elements. Symmetric tip relief on external and internal gear meshes are introduced as normal deviations along the lines of contact superimposed on a stiffness distribution aimed at simulating position- and time-varying mesh stiffness functions. The equations of motion are solved by the combination of a Newmark’s time-step integration scheme and a contact algorithm to account for possible partial or total contact losses. Symmetric linear profile modifications are then optimized by using a genetic algorithm with the objective of minimizing dynamic tooth loads over a speed range. Finally, the interest of the corresponding optimum profile modifications with regard to speed and torque variations is analyzed.

Published
2015

13. Analysis of no-load dependent power losses in a planetary gear train by using thermal network method

Author

J Durand de Gevigney, Philippe Velex, Samuel Raymond Germain Becquerelle, Fabrice Ville, Christophe Changenet, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), LabECAM, ECAM Lyon (ECAM Lyon), Hispano Suiza, HISPANO SUIZA, LaMCoS, ECAM, and Ville, Fabrice

Subjects
0209 industrial biotechnology, Engineering, Specific test, business.industry, Thermal network, Mechanical engineering, 02 engineering and technology, [SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph], [SPI.MECA] Engineering Sciences [physics]/Mechanics [physics.med-ph], Physics::Classical Physics, 7. Clean energy, Power (physics), Gear train, 020303 mechanical engineering & transports, 020901 industrial engineering & automation, 0203 mechanical engineering, Planet, Windage, Astrophysics::Earth and Planetary Astrophysics, Thermal model, business, ComputingMilieux_MISCELLANEOUS, Simulation
Abstract

This paper presents an original method to investigate the power losses distribution into a planetary gear unit. A thermal model, which allows the estimation of power losses linked to the temperature distribution, is established. This model is used to analyse some experimental results obtained on a specific test rig. For the planetary gear set studied here, it is demonstrated that load-independent power losses are mainly due to hydrodynamic power losses generated in planets bearings and that gears windage effects are negligible.

Published
2014
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14. A torsional model of multi-stage gears – influence of external excitations and tooth shape modifications

Author

Samuel Raymond Germain Becquerelle, Jérôme Bruyère, Hassen Fakhfakh, Philippe Velex, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Hispano Suiza, and HISPANO SUIZA

Subjects
Engineering, Discretization, 02 engineering and technology, 01 natural sciences, Industrial and Manufacturing Engineering, [PHYS.MECA.STRU]Physics [physics]/Mechanics [physics]/Structural mechanics [physics.class-ph], 0203 mechanical engineering, Involute, [PHYS.MECA.SOLID]Physics [physics]/Mechanics [physics]/Solid mechanics [physics.class-ph], 0103 physical sciences, medicine, Torque, General Materials Science, 010301 acoustics, ComputingMilieux_MISCELLANEOUS, Forcing (recursion theory), business.industry, Mechanical Engineering, Contact line, Stiffness, Mechanics, Structural engineering, Phaser, Multi stage, 020303 mechanical engineering & transports, medicine.symptom, business
Abstract

In this paper, a torsional dynamic model of multi-stage idler spur and helical gears is presented which combines mesh internal excitations and external forcing terms such as time-varying external torque. Each contact line in the various base planes is discretized in elemental cells which are all attributed a time-varying mesh stiffness element and initial separation to account for tooth shape deviations from ideal involute flanks. The mesh stiffness functions are estimated from the formulae of Weber & Banaschek and their relative phasing is determined based on gear geometry and relative positioning. The corresponding non-linear differential system is solved by combining a Newmark’s numerical time-step integration scheme and a normal contact algorithm. A number of simulation results are presented on the combined influence on dynamic tooth loads of errors and shape deviations along with external excitations.

Published
2016
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15. New Applications in Power Electronics Based on SiC Power Devices

Author

Hervé Morel, Dominique Bergogne, Dominique Planson, Brunp Allard, Régis Meuret, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), HISPANO SUIZA, Groupe Safran, SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
JFET, Materials science, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, 7. Clean energy, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Power electronics, 0103 physical sciences, High Voltage, Silicon carbide, Hardware_INTEGRATEDCIRCUITS, Breakdown voltage, General Materials Science, Power semiconductor device, Power Electronics, 010302 applied physics, High Temperature, SiC devices, business.industry, Mechanical Engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, High voltage, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, visual_art, Electronic component, visual_art.visual_art_medium, Inverter, 0210 nano-technology, business
Abstract

600-603, 2009, Pages 925-930; International audience; Controlled switch devices are now available in silicon carbide. So new applications are possible. The SiC-JFET enables to develop high temperature inverters for the More Electric Aircraft for instance. The diode-less SiC-JFET inverter is a potentially nice solution, but specific drivers, passive components and packaging have to be developed. Besides high voltage applications need high voltage devices. In this case design rules have to be adapted to the extended short-circuit and breakdown voltage capabilities of SiC devices.

Published
2007
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16. Transient thermohydraulic modeling of two-phase fluid systems

Author

Nicolas Delalandre, Cyril Romestant, Yves Bertin, Nicolas Blet, Vincent Ayel, Vincent Platel, Institut Pprime (PPRIME), ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers, Hispano Suiza, HISPANO SUIZA, LABORATOIRE DE THERMIQUE ENERGETIQUE ET PROCEDES (EA1932) (LATEP), and Université de Pau et des Pays de l'Adour (UPPA)

Subjects
History, geography, Engineering, geography.geographical_feature_category, Capillary action, business.industry, 020209 energy, 02 engineering and technology, Mechanics, Inlet, Computer Science Applications, Education, Physics::Fluid Dynamics, 020303 mechanical engineering & transports, 0203 mechanical engineering, [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], 0202 electrical engineering, electronic engineering, information engineering, Mass flow rate, Sensitivity (control systems), Transient (oscillation), business, Representation (mathematics), Condenser (heat transfer), Simulation, Parametric statistics
Abstract

International audience; This paper presents a transient thermohydraulic modeling, initially developed for a capillary pumped loop in gravitational applications, but also possibly suitable for all kinds of two-phase fluid systems. Using finite volumes method, it is based on Navier-Stokes equations for transcribing fluid mechanical aspects. The main feature of this 1D-model is based on a network representation by analogy with electrical. This paper also proposes a parametric study of a counterflow condenser following the sensitivity to inlet mass flow rate and cold source temperature. The comparison between modeling results and experimental data highlights a good numerical evaluation of temperatures. Furthermore, the model is able to represent a pretty good dynamic evolution of hydraulic variables.

Published
2012
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17. VHCF life of AM1 Ni-based single crystal superalloy after pre-deformation

Author

Luciana Maria Bortoluci Ormastroni, Jérémy Rame, Jonathan Cormier, Patrick Villechaise, Satoshi Utada, Institut Pprime (PPRIME), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS), Safran Aircraft Engines, ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers, SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
Materials science, Recrystallization (geology), 02 engineering and technology, Slip (materials science), 01 natural sciences, Industrial and Manufacturing Engineering, [SPI]Engineering Sciences [physics], 0203 mechanical engineering, 0103 physical sciences, Surface roughness, Rejuvenation, General Materials Science, Composite material, Pre deformation, ComputingMilieux_MISCELLANEOUS, Ni-based single crystal superalloy, [PHYS]Physics [physics], 010302 applied physics, Shearing (physics), Mechanical Engineering, Pre-deformation, Microstructure, Ni-based single crystal superalloy, Pre-deformation, Very high cycle fatigue, Rejuvenation, Very high cycle fatigue, 020303 mechanical engineering & transports, Mechanics of Materials, Modeling and Simulation, Crack initiation, Single crystal superalloy
Abstract

International audience; VHCF properties of the Ni-based single crystal superalloy AM1 with pre-deformation have been investigated at 1000 °C. Pre-deformed material did not present life debit under fully reversed conditions (R = −1). Pre-deformation decreased VHCF lifetime under high mean stress conditions (R = 0.5) with a shift from internal to mode I surface crack initiation. The pre-deformed material has microstructure coarsened bands lying on the former {1 1 1} slip planes, facilitating microstructure shearing during VHCF at R = 0.5. Slip traces increased surface roughness, causing a surface recrystallization and initiation of the fatal crack from the surface. Rejuvenation heat treatment after pre-deformation can restore the microstructure and the fatigue life.

Published
2021
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18. Overall Size Optimization of a High-Speed Starter Using a Quasi-Z-Source Inverter

Author

Jeremy Cuenot, Régis Meuret, Farid Meibody-Tabar, Babak Nahid-Mobarakeh, Eric Monmasson, Serge Pierfederici, Sami Zaim, Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), Université de Lorraine (UL), SAFRAN, Grp Hispano Suiza, SAFRAN Group, Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), and Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Engineering, business.industry, 020208 electrical & electronic engineering, Ripple, Energy Engineering and Power Technology, Transportation, Topology (electrical circuits), 02 engineering and technology, 7. Clean energy, 01 natural sciences, Power (physics), [SPI]Engineering Sciences [physics], Direct torque control, Control theory, 0103 physical sciences, Automotive Engineering, 0202 electrical engineering, electronic engineering, information engineering, Inverter, Electrical and Electronic Engineering, business, Synchronous motor, Voltage, Z-source inverter
Abstract

International audience; In new generation of more electric aircrafts, dc-bus voltage is variable due to the variable speed generator. This implies constrains to design the actuator for the lowest dc voltage value. In case of permanent magnet synchronous machine (PMSM) starter supplied by a conventional power topology (LC input filter-voltage-source inverter), the torque constant should be low enough to ensure the controllability of the phase currents. This leads to increase rated current and so to oversize the inverter heat sink. In this paper, an optimal design procedure for a quasi-Z-source inverter with coupled inductors is presented for a PMSM starter application. This topology allows boosting the inverter input voltage at high speeds. Therefore, a motor with higher torque constant and lower rated current can be designed for this application. In addition, the input current ripple is canceled by a structural modification allowing a smaller input filter. The global optimization of the power conversion chain shows a whole volume reduction of 20% without decreasing the global efficiency compared to the conventional solution. Experimental results illustrate this conclusion and show the effectiveness of the proposed approach.

Published
2017
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19. On transmission errors and profile modifications minimising dynamic tooth loads in multi-mesh gears

Author

H. Fakhfakh, M. Chapron, Jérôme Bruyère, Ph. Velex, Samuel Raymond Germain Becquerelle, Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), HISPANO SUIZA, and Groupe Safran

Subjects
0209 industrial biotechnology, Engineering, Acoustics and Ultrasonics, business.industry, Multi mesh, Mechanical Engineering, Context (language use), 02 engineering and technology, Structural engineering, Modular design, [PHYS.MECA.SOLID]Physics [physics]/Mechanics [physics]/Mechanics of the solides [physics.class-ph], Physics::Classical Physics, Condensed Matter Physics, 020303 mechanical engineering & transports, 020901 industrial engineering & automation, 0203 mechanical engineering, Mechanics of Materials, [PHYS.MECA.STRU]Physics [physics]/Mechanics [physics]/Mechanics of the structures [physics.class-ph], business, ComputingMilieux_MISCELLANEOUS, Dynamic mesh, Transmission errors
Abstract

A modular three-dimensional model of multi-mesh gears is used to analyse theoretically the link between dynamic mesh excitations and transmission errors. It is demonstrated that dynamic mesh forces are mostly controlled by the local transmission errors associated with each individual mesh. A design criterion is derived which can be used to define the tooth shape modifications minimising dynamic tooth loads. The results from two examples of application on idler and planetary systems prove that the proposed theory is sound and can be applied to a variety of gear geometries. Finally, the interest and limits of using transmission errors from a single pinion-gear pair in the context of multi-mesh gears are discussed.

Published
2016
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20. Impact de la configuration des capacités de découplage sur le pré filtrage des perturbations de mode différentiel

Author

Yade, Ousseynou, Martin, Christian, Bréard, Arnaud, Vollaire, Christian, Ali, M, Meuret, Régis, Ampère, Département Méthodes pour l'Ingénierie des Systèmes (MIS), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Ampère, Département Energie Electrique (EE), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Ampère, Publications

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

National audience

Published
2018

21. Mesures large bande en courant et tension pour l'évaluation de la puissance dissipée et des perturbations conduites d'un convertisseur de puissance

Author

Loudière, Kévin, Bréard, Arnaud, Vollaire, Christian, Costa, François, Moussa, Houmam, Meuret, Régis, Ampère, Publications, VALEO, Ampère, Département Méthodes pour l'Ingénierie des Systèmes (MIS), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; Lors de la phase de développement d’un prototype de convertisseur d’électronique de puissance, une étude de la puissance dissipée par le module est nécessaire afin de dimensionner les dissipateurs thermiques. Une seconde problématique est de s’assurer que les perturbations électromagnétiques émises par le système respect les normes en vigueur. Pour ces deux points une campagne de mesures de tension et courant en certains points peut être réalisée à condition de prendre certaines précautions liées à la bande passante des sondes utilisées. Pour se faire, une caractérisation des sondes de mesures doit être effectuée en mesurant leur fonction de transfert afin de réaliser une déconvolution dans le domaine temporel du signal mesuré et supprimer la signature des sondes. Une mesure du transfert de mode (Mode Commun vers Mode Différentiel) de ces sondes doit également être réalisée. La méthode est évaluée ici en comparant la puissance dissipée mesurée électriquement avec celle mesurée thermiquement.

Published
2018

22. Die attach using silver sintering. Practical implementation and analysis

Author

Wissam Sabbah, Cyril Buttay, Régis Meuret, Hervé Morel, Dominique Planson, Amandine Masson, Raphaël Riva, Stephane Azzopardi, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, SAFRAN, Grp Hispano Suiza, SAFRAN Group, FRAE projet EPAHT, and Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, power electronics packaging, silver sintering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 020208 electrical & electronic engineering, Metallurgy, dBc, Sintering, 02 engineering and technology, Substrate (printing), 01 natural sciences, Silver nanoparticle, Die (integrated circuit), high temperature, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Melting point, Electrical and Electronic Engineering, Silver particles
Abstract

National audience; Silver sintering is a promising alternative to high melting point (HMP) solders which contain lead. Indeed, it offers better thermal and electrical properties, and can operate at higher temperature. Currently, several implementations of this technique are available, based on various silver particles sizes and sintering additives. This paper presents a review of the different implementations, and gives practical details about one of them, based on silver nanoparticles. One specific aspect is highlighted: the metal finish of the DBC substrate. It has a major impact on the quality of the sintered joint: with some finishes, the adhesion is excellent (more than 50 MPa), while it is poor with some others (lower than 10 MPa).

Published
2013
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23. Reliability in Power Modules Die Attach: A Comprehensive Evolution of the Nanocrystalline Silver Sintering Physical Properties Versus its Porosity

Author

Toni Youssef, Wafaa Rmili, Eric Woirgard, Stephane Azzopardi, Nicolas Vivet, Donatien Martineau, Régis Meuret, Guenhael Le Quilliec, Caroline Richard, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Mécanique et de Rhéologie (LMR), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Polytech'Tours, STMicroelectronics [Tours] (ST-TOURS), SAFRAN, Grp Hispano Suiza, SAFRAN Group, European Project: SiCRATES, Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Polytech'Tours, Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université de Tours (UT)-Polytech'Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)

Subjects
[SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph], [PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2015

24. Downsizing an electric actuator supplied with variable voltage using an interlaced high frequency boost converter for more electric aircrafts

Author

Sami Zaim, Farid Meibody-Tabar, Régis Meuret, Babak Nahid-Mobarakeh, Eric Monmasson, Jeremy Cuenot, SAFRAN, Grp Hispano Suiza, SAFRAN Group, Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), Université de Lorraine (UL), Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), and Institute of Electrical and Electronics Engineers ( IEEE )

Subjects
010302 applied physics, Engineering, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Valve actuator, Automotive engineering, Variable (computer science), Control theory, Cascade, 0103 physical sciences, Boost converter, 0202 electrical engineering, electronic engineering, information engineering, Synchronous motor, Actuator, business, Voltage
Abstract

International audience; The variable speed of 41generators in aircrafts implies voltage variations which lead to an over-dimensioning of actuators VSIs. The aim is to show that interlaced high frequency Boost-converters in cascade with the VSI, may lead to reduce the actuators global size without reducing their efficiency.

Published
2015
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25. Power modules die attach: A comprehensive evolution of the nanosilver sintering physical properties versus its porosity

Author

Régis Meuret, Caroline Richard, Eric Woirgard, Donatien Martineau, Wafaa Rmili, G. Le Quilliec, Stephane Azzopardi, Toni Youssef, Nicolas Vivet, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Mécanique et de Rhéologie (LMR), Université de Tours (UT)-Polytech'Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), STMicroelectronics [Tours] (ST-TOURS), SAFRAN, Grp Hispano Suiza, SAFRAN Group, European Project: SiCRATES, Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Polytech'Tours, and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Polytech'Tours

Subjects
Materials science, business.product_category, Sintering, Young's modulus, 02 engineering and technology, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, symbols.namesake, Reliability (semiconductor), Thermal conductivity, 0103 physical sciences, [SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph], Electrical and Electronic Engineering, Composite material, Safety, Risk, Reliability and Quality, Porosity, 010302 applied physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Nanocrystalline material, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Power module, symbols, [PHYS.MECA.THER]Physics [physics]/Mechanics [physics]/Thermics [physics.class-ph], Die (manufacturing), 0210 nano-technology, business
Abstract

International audience; Along with the need to drastically limit the emission of greenhouse gases, the increase of electric or hybrid solutions in the market mostly relies on their dependability with a specific focus on reliability of the embedded power electronics. Due to RoHS restrictions, conventional lead-based solders cannot be used anymore. Sintered nanometric silver paste was chosen as an alternative candidate because of its high melting point, its promising behavior under aging, its better thermal and electrical conductivities and its low sensitivity to oxidation. However, few data are available in the literature concerning its mechanical properties. The processing route, based on the sintering of nanocrystalline powder, provides a material with significant porosity that is known to modify the mechanical properties when compared to the dense material. In this work, the identification of the porosity rate of such material after sintering process is investigated and hence the reliability of silver sintering depending on porosity rate is also analyzed.

Published
2015
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26. Study of a quasi Z-source inverter and permanent magnet synchronous motor to reduce global size of a more electric aircraft actuator

Author

Jeremy Cuenot, Babak Nahid-Mobarakeh, Sami Zaim, Eric Monmasson, Régis Meuret, Farid Meibody-Tabar, Serge Pierfederici, Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), Université de Lorraine (UL), SAFRAN, Grp Hispano Suiza, SAFRAN Group, Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), and Institute of Electrical and Electronics Engineers ( IEEE )

Subjects
Electric motor, Engineering, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 7. Clean energy, Power (physics), Direct torque control, Control theory, Inverter, Torque, business, Actuator, Z-source inverter, Voltage
Abstract

International audience; Aircraft DC buses are variable due to the variable speed generators which constrains to design the actuator for the lowest DC voltage value which leads to over-sizing VSIs of actuators. It is proposed to use a quasi Z-source inverter to increase the torque constant in order to reduce the phase currents consequently the losses and increase input inverter voltage at high speed to keep the control of the system. By choosing adapted turn number of the motor winding coils, input inverter voltage and switching frequency, it is possible to reduce the global volume of the power conversion chain without decreasing the global efficiency of the actuator.

Published
2015
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27. Experimental investigation on no-load dependent power losses in planetary gear set

Author

Jérôme Durand de Gevigney, Christophe Changenet, Fabrice VILLE, Philippe Velex, Samuel Becquerelle, Ville, Fabrice, Systèmes Mécaniques et Contacts (SMC), Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), LabECAM, ECAM Lyon (ECAM Lyon), Hispano Suiza, and HISPANO SUIZA

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

28. Model-independent sensorless control for non-salient PM synchronous motors at low speeds including standstill

Author

Régis Meuret, Sami Zaim, Babak Nahid-Mobarakeh, Farid Meibody-Tabar, Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), Université de Lorraine (UL), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Institute of Electrical and Electronics Engineers ( IEEE )

Subjects
0209 industrial biotechnology, Engineering, Machine theory, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Control engineering, 02 engineering and technology, Magnetic circuit, 020901 industrial engineering & automation, Low speed, Salient, Matrix algebra, Control theory, 0202 electrical engineering, electronic engineering, information engineering, Voltage pulse, business, Synchronous motor
Abstract

International audience; This article presents a new position and speed sensorless drive for non-salient pole PM synchronous machines in low speed range including standstill. The proposed method does not depend on the machine parameters and is very simple to implement. A voltage pulse injection is combined to a magnetic circuit saturation which will be created by an additional current. This latter is not necessary if the machine is salient pole. Mathematical proof of the convergence is presented. The minimum saliency required for sensorless operation at zero speed is determined. It is also shown that the proposed approach is robust with respect to parameter uncertainties. The effectiveness of this technique is verified by simulation and experimentation on an eight-poles 1 hp - 1000 rpm test machine.

Published
2013
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29. Study of die attach technologies for high temperature power electronics: Silver sintering and gold-germanium alloy

Author

Eric Woirgard, Régis Meuret, Stephane Azzopardi, Wissam Sabbah, Cyril Buttay, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1

Subjects
Materials science, Thermal resistance, Alloy, Sintering, chemistry.chemical_element, Germanium, 02 engineering and technology, Temperature cycling, engineering.material, 01 natural sciences, Die (integrated circuit), Power electronics, 0103 physical sciences, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, 010302 applied physics, Metallurgy, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Soldering, engineering, 0210 nano-technology
Abstract

International audience; Silver sintering joints and AuGe soldering are promising technologies for high temperature (>200 °C ambient) power electronics packaging. This paper presents the implementation of two silver-sintering processes with the one hand micrometer-scale silver particles, and on the other hand nano-meter-scale particles. Two substrates technologies have been investigated: A12O3 DBC and Si3N4 AMB. After the process optimization, tests vehicles have been assembled using both sintering processes, as well as a more classical high-temperature die attach technology: AuGe soldering. Multiple analyses have been performed, such as thermal resistance measurement, shear tests and micro-sections to follow the evolution of the joint during thermal cycling and high-temperature storage ageing.

Published
2013
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30. Analysis of the SiC VJFET gate punch-through and its dependence with the temperature

Author

Régis Meuret, Fabien Dubois, Dominique Tournier, Dominique Bergogne, Cyril Buttay, Hervé Morel, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
JFET, Materials science, High temperature electronics, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, Blocking (statistics), 01 natural sciences, Silicon Carbide (SiC), 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Device modeling, Voltage range, Device characterisation, 010302 applied physics, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, Wide-bandgap semiconductor, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Threshold voltage, ComputerSystemsOrganization_MISCELLANEOUS, Optoelectronics, 0210 nano-technology, business, Voltage
Abstract

10 pages; International audience; Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature rises. So, the punch-through temperature dependence is a very important feature for applications operating in a wide temperature range like aeronautic applications. This paper addresses the analysis and modeling of the punch-through phenomenon and its dependence to the temperature. The proposed model gives a good agreement with the experimental data.

Published
2013
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31. Integrated coreless transformer for high temperatures design and evaluation

Author

Wided Zine, Hilal Izzeddine, Régis Meuret, Pascal Bevilacqua, Jean-Christophe Riou, Dominique Bergogne, Bruno Allard, Christian Martin, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and STMicroelectronics

Subjects
010302 applied physics, Engineering, business.industry, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 020208 electrical & electronic engineering, Passive component, 02 engineering and technology, Integrated Circuit (IC), 01 natural sciences, 7. Clean energy, Automotive engineering, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, [SPI]Engineering Sciences [physics], law, visual_art, 0103 physical sciences, Electronic component, Device characterization, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, visual_art.visual_art_medium, Energy efficient transformer, Transformer, business
Abstract

International audience; A novel coreless technology based on an existing process, initially designed to produce integrated passive components for commercial temperatures, is used and its capability at 200°C is tested. Design aspects and electrical characterizations of the samples are presented. Finally, an endurance test shows a satisfactory behaviour at high temperatures.

Published
2013
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32. Design and Implementation of Integrated Common Mode Capacitors for SiC JFET Inverters

Author

Remi Robutel, Régis Meuret, Cyril Buttay, Christian Martin, Hervé Morel, Paolo Mattavelli, Dushan Boroyevich, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Center for power electronics system, University of Wisconsin-Madison, Universita degli Studi di Padova, SAFRAN, Grp Hispano Suiza, SAFRAN Group, and DGA

Subjects
Engineering, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Electromagnetic interference, law.invention, law, EMI, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Power semiconductor device, Common-mode signal, Multichip modules, Electrical and Electronic Engineering, 010302 applied physics, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, Electromagnetic compatibility, Inverters, Capacitor, Power module, Inverter, business
Abstract

12 pages; International audience; This paper deals with the issue of electromagnetic interference (EMI) in SiC-JFET inverter power modules, and proposes a solution to limit conducted emissions at high frequencies. SiC-JFET inverters can achieve very fast switching, thereby reducing commutation losses, at the cost of a high level of EMI. In order to limit conducted EMI emissions, it is proposed to integrate small-value common mode (CM) capacitors, directly into the power module. High frequency noise, which is usually difficult to filter, is then contained within the module, thus keeping it far from the external network. This approach is in line with the current trend towards the integration of various functions (such as protection, sensors or drivers) around power devices in modern power modules. To demonstrate this concept, the resulting CM noise was investigated, and compared with a standard configuration. Simulations were used to design the integrated capacitors, and measurements were carried out on an experimental SiC-JFET half-bridge structure. A significant reduction was achieved in the experimentally observed CM conducted emissions, with a very minor influence on the switching waveforms, losses and overall size of the system. The benefits and limitations of this design are discussed, for the case of mid-power range inverters for aircraft applications.

Published
2013
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34. A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs

Author

Dubois, Fabien, Sorel, Stéphane, Dhokkar, Sonia, Meuret, Régis, Bergogne, Dominique, Martin, Christian, ALLARD, Bruno, Morel, Hervé, Wang, Ruxi, Tech, Virginia, SAFRAN, Grp Hispano Suiza, SAFRAN Group, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Ampère, Département Energie Electrique (EE), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), The Bradley Department of Electrical and Computer Engineering [Blacksburg], and Virginia Tech [Blacksburg]

Subjects
010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, Wide-bandgap semiconductor, JFET, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, Converters, 01 natural sciences, 7. Clean energy, Threshold voltage, chemistry.chemical_compound, chemistry, Logic gate, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Gate driver, Hardware_INTEGRATEDCIRCUITS, MESFET, business
Abstract

International audience; Silicon Carbide (SiC) components are accepted devices for high temperature and high efficiency applications. Normally-on SiC JFETs are now commercialized and will be used in future power converters. However, such devices are conducting when not driven with a sufficient negative voltage, which can lead to safety issues during start-up or abnormal operation of the gate driver. Therefore, it is needed to generate an auxiliary negative voltage to turn-off the JFET in order to protect the system. Moreover, insulation is necessary to cover all failure modes. Prior papers presented solution to protect such devices but no high temperature isolated solution were demonstrated. In this paper, a solution to protect JFETs used in a high temperature (200°C) voltage source inverter is proposed. The protection circuit, components selection and characterizations for high temperature application are detailed. Experimental results are provided and validate the design of the isolated normally-on protection circuit up to 200°C.

Published
2012
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35. Tooth friction losses in internal gears: analytical formulation and applications to planetary gears

Author

Fabrice Ville, Christophe Changenet, J Durand de Gevigney, Philippe Velex, Systèmes Mécaniques et Contacts (SMC), Laboratoire de Mécanique des Contacts et des Structures [Villeurbanne] (LaMCoS), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), LabECAM, ECAM Lyon (ECAM Lyon), Ville, Fabrice, and Hispano-Suiza

Subjects
0209 industrial biotechnology, Engineering, business.industry, [SPI] Engineering Sciences [physics], Mechanical Engineering, internal gear, Mechanical engineering, 02 engineering and technology, Surfaces and Interfaces, power loss, Surfaces, Coatings and Films, Power (physics), [SPI]Engineering Sciences [physics], 020303 mechanical engineering & transports, 020901 industrial engineering & automation, planetary gears, 0203 mechanical engineering, efficiency, tooth friction, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; An original formulation for tooth friction power losses in internal gears including the influence of tooth profile modifications is presented. For unmodified gears, the results agree well with the classic formulae in the literature thus validating the proposed approach. The contributions of profile modifications on internal gear efficiency are compared to that on external gears and the formulation is extended to planetary gears. Finally, the role of profile relief on planetary gear efficiency is pointed out and commented upon.

Published
2012
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36. An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators

Author

Hervé Morel, Sonia Dhokkar, Dominique Bergogne, Fabien Dubois, Bruno Allard, Christian Martin, Luong Viet Phung, Khalil El Falahi, Régis Meuret, Cyril Buttay, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, SAFRAN Group, Ampère, Département Energie Electrique (EE), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), IMAPS, and Ampère, Publications

Subjects
Test bench, Engineering, Silicon on insulator, 02 engineering and technology, Input EMI filter, Inductor, 01 natural sciences, 7. Clean energy, law.invention, chemistry.chemical_compound, EMI, law, Voltage Feed Inverter, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Gate driver, Pharmacology (medical), Transformer, 010302 applied physics, Interconnection, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, Normally-On device, chemistry, business, SiC JFET, [SPI.NRJ] Engineering Sciences [physics]/Electric power, JFET gate driver
Abstract

International audience; Normally-On Silicon Carbide (SiC) JFETs are good candidates for power switches in high temperature applications, in Three-Phase Voltage-Fed Inverters used to drive Electro-Mechanical Actuators (EMA) for the more electrical aircraft where the ambient varies from -55 °C to 200 °C. The power of the EMA is in the 1 to 5 kW range, the DC bus voltage is 540 V. It is also necessary to implement passive subsystems such as Electro-Magnetic-Interference (EMI) flters, power inductors, transformers, packaging and interconnection solution that withstand the wide temperature range. The gate driver for normally-On devices must include a safe solution against short-circuit in the event of a power supply failure. The experimental converter is built using engineering samples such as SiC JFETs, SOI drivers and laboratory made components such as inductive wire wound, nano-crystalline core components, SOI integrated driver, assembled with a high temperature package and technology. Finally, the Smart EMA test bench is presented.

Published
2012

37. Module électronique de puissance pour un actionneur pour aéronef

Author

Charlas, Mathieu, Habas, Jean-Pierre, Nassiet, Valérie, LABORATOIRE PRIMES, HISPANO SUIZA, Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC), Laboratoire de Génie de Production, and Ecole Nationale d'Ingénieurs de Tarbes

Subjects
[CHIM.POLY]Chemical Sciences/Polymers, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

Module électronique de puissance, en particulier pour un actionneur tout-électrique pour aéronef, comprenant un support (14) sur lequel sont montés des composants électroniques (20) et un boîtier (28, 38, 44) recouvrant et entourant les composants (20) et fixé sur le support (14), le boîtier (28, 38, 44) comprenant des parois (26, 36, 42) fixées sur des faces correspondantes d'une pièce intermédiaire (30, 40, 46) fixée à l'intérieur du boîtier (28, 38, 44) sur le support (14).

Published
2011

38. Electronic power module for an aircraft actuactor

Author

Charlas, Mathieu, Habas, Jean-Pierre, Nassiet, Valérie, LABORATOIRE PRIMES, HISPANO SUIZA, Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC), Laboratoire de Génie de Production, and Ecole Nationale d'Ingénieurs de Tarbes

Subjects
[CHIM.POLY]Chemical Sciences/Polymers, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

An electronic power module, in particular an all-electric actuator for an aircraft, comprising a support having electronic components mounted thereon together with a package covering and surrounding the components and fastened on the support, the package having walls fastened on corresponding faces of an intermediate part that is fastened to the support inside the package.

Published
2011

39. A multi-physics model of the VJFET with a lateral channel

Author

Hervé Morel, Youness Hamieh, Dominique Tournier, Rémi Robutel, Fabien Dubois, Damien Risaletto, Christian Martin, Dominique Bergogne, Cyril Buttay, Régis Meuret, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Ampère, Publications

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; A multi-physics model of the VJFET with a lateral channel is presented. The model has been implemented and tested in SABER using the MAST language. The model includes an asymmetric representation of the lateral channel which is the main contribution of the paper. The blocking condition is not so obvious and it is presented in details. Each junction of the structure is represented as a Shockley pn-junction model in parallel with the associated junction capacitance. The comparison between simulations and experiments yields to satisfying results, both in static and dynamic conditions. The analysis of the remaining difficulties to be solved is given.

Published
2011

40. Active protections for normally-on SiC JFETs

Author

Fabien Dubois, Damien Risaletto, Dominique Bergogne, Hervé Morel, Cyril Buttay, Régis Meuret, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Ampère, Publications

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; Normally-on Silicon Carbide (SiC) JFETs are powerful power switches that allow improvement of the efficiency and high temperature operation of Voltage Fed Inverter (VFI). Moreover, the need for heavy and costly cooling system can be radically decreased due to the high thermal conductivity that exhibits the SiC material compared to Si counterpart. However some safety considerations have to be taken against short-circuit and voltage breakdown. In this paper, it is proposed an overview of the failure mechanisms of the SiC JFET. Fast and reliable solutions to protect SiC JFETs are also presented. Experimental validation of such protections and investigation of gate destruction mode are proposed.

Published
2011

41. Ultrafast safety system to turn-off normally on SiC JFETs

Author

Dubois, Fabien, Bergogne, Dominique, Risaletto, Damien, Perrin, Rémi, Zaoui, Abderrahime, Morel, Hervé, Meuret, Régis, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power
Abstract

International audience; The use of normally on Silicon Carbide (SiC) JFET devices poses the question of safety and reliability in Voltage Fed Inverter (VFI) applications. Indeed, when a JFET is not driven with a sufficient negative voltage, the JFET is conducting and the VFI may be short-circuited. Therefore, it is needed to generate a negative voltage to turn-off the JFET to protect the VFI in case of gate driver failure. The settling time of this negative voltage must be inferior to the power system constant time to reduce the rise time of the short-circuit current. In this paper, a solution to protect the JFET and the system is proposed. A circuit description of an innovative topology using a Forward-Flyback topology with Primary Side Sensing (PSS) technique and an Output Voltage Estimation based on the Time Constant Matching (OVETCM) is presented. Moreover, the converter protects the VFI for an input range from 3 V to 610 V and up to 150 °C. Experimental results are provided and validate the design of the safety system.

Published
2011

42. Dispositif électronique avec refroidissement par spreader à métal liquide

Author

Salat, Jacques, Avenas, Yvan, Meuret, Régis, Tawk, Mansour, Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Garcia, Sylvie

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Published
2011

43. Integrated common mode capacitors for SiC JFET inverters

Author

Hervé Morel, Régis Meuret, Christian Martin, Nicolas Gazel, Dushan Boroyevitch, Paolo Mattavelli, Remi Robutel, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
0303 health sciences, 030306 microbiology, Computer science, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, JFET, 02 engineering and technology, 7. Clean energy, Electromagnetic interference, law.invention, 03 medical and health sciences, Capacitor, Filter (video), EMI, law, Power module, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Common-mode signal, Commutation, business
Abstract

International audience; SiC-JFET based inverters can achieve very fast switching, hence reducing the commutation losses, at the cost of increased Electro-Magnetic Interferences (EMI). To keep the EMI conducted emissions within reasonable limits, we propose to integrate some small-values capacitors directly into the power module. Common Mode (CM) is investigated and compared with a standard configuration. The high frequency noise, which is usually difficult to filter, is contained in a close loop with the switching source, and far from the network. To demonstrate this concept, simulations are used as well as experiments on a SiC-JFET half-bridge structure. Benefits and limitations are investigated in the case of mid-power range inverters for aircraft applications.

Published
2011
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44. Design of a High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter

Author

Rémi Robutel, Christian Martin, Hervé Morel, Cyril Buttay, Nicolas Gazel, Dominique Bergogne, Ampère, Publications, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
010302 applied physics, Computer Networks and Communications, Electromagnetic disturbance, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 020208 electrical & electronic engineering, 02 engineering and technology, Silicon carbide, Inductor, High temperature, 7. Clean energy, 01 natural sciences, Electromagnetic interference, Electronic, Optical and Magnetic Materials, Temperature dependence, Junction field effect transistor, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Inverter, Electrical and Electronic Engineering, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; In this article, a high temperature EMI input filter for a SiC JFET inverter is designed and tested in operating conditions at 200°C. Inverter EMI issues, design procedure, and characterizations of selected components are presented in detail. The feasibility based on industrially available materials and components is demonstrated with a low temperature dependence of the EMI spectrum.

Published
2011

45. Design of Double Salient Interior Permanent Magnet Machine Based on Mutually Coupled Reluctance Machine for Increasing the Torque Density and Flux-Weakening Capability

Author

Mohamed Gabsi, Guang-Jin Li, Emmanuel Hoang, C. Balpe, X. Ojeda, Systèmes d'Energie pour les Transports et l'Environnement (SATIE SETE), Composants et Systèmes pour l'Energie Electrique (CSEE), Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS)-Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), SAFRAN POWER, Hispano-Suiza, and Sefora

Subjects
double salient, Torque density, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, cogging torque, Control theory, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Torque, Torque ripple, 010302 applied physics, Physics, flux-weakening capability, Magnetic reluctance, Rotor (electric), 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Cogging torque, permanent magnets, d-axis and q-axis inductances, Switched reluctance motor, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Magnet
Abstract

International audience; This paper presents a novel structure of double salient interior permanent magnet machine (DSIPM machine) based on mutually coupled switched reluctance machine (MCSRM). Due to its salient rotor structure, the DSIPM machine can have less magnetic and iron materials as well as higher dynamic response than conventional IPM machines. The comparison of electromagnetic performances in terms of self and mutual inductances, d-axis and q-axis inductances, cogging torque, reluctance torque, total torque, torque ripple coefficient and flux-weakening capability between the DSIPM machine 6/8 and the DSIPM machine 12/8 has been realized. The numerical results based on Finite Element 2D shows that due to its much lower cogging torque and higher reluctance torque, the DSIPM machine 12/8 can produce higher total average torque than the DSIPM 6/8 at all phase current range. Furthermore, at low phase currents, the torque ripple of the DSIPM machine 12/8 is lower than that of the DSIPM machine 6/8, while at high phase currents, the torque ripples of these two machines are similar. Comparing to MCSRM, the DSIPM machines can produce higher average torque with lower torque ripple. Moreover, due to their high d-axis inductances, the two DSIPM machines can have theoretically ''infinite'' flux-weakening capability with relatively lower short-circuit currents.

Published
2010
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46. EMI circuit modeling of a power train on composite ground plane

Author

N. Gazel, Régis Meuret, Christian Vollaire, Francois Costa, N. Doorgah, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
Engineering, business.industry, Line Impedance Stabilization Network, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, Ranging, 02 engineering and technology, 7. Clean energy, Electromagnetic interference, EMI, Power electronics, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Common-mode signal, High-voltage direct current, business, Ground plane
Abstract

International audience; The aeronautics world is in continuous evolution. Actually, the tendency is to substitute the hydro mechanical actuators with electrical ones. However, this means introducing more power electronics and in doing so, the systems become more and more vulnerable to electromagnetic noise emitted. Moreover, the introduction of composite material based structures modifies ElectroMagnetic Interference (EMI) behavior in airplanes. The aim of this study is to be able to predict, via modeling, for frequencies ranging from 10 kHz to some MHz, the propagation pathways and the amount of common mode (CM) and differential mode (DM) current. Thus, the model developed as well as the optimization methods can benefit the aeronautical industry during preliminary phases of development of different equipments.

Published
2010
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47. High Temperature Inverter for Airborne Application

Author

Dubois, Fabien, Bergogne, Dominique, Risaletto, Damien, Robutel, Rémi, Morel, Hervé, Meuret, Régis, Dhokkar, Sonia, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Ampère, Publications

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; This paper reports the design, fabrication and experimental performance of a 2kW, 20kHz, High Temperature, three-phase, all-SiC JFET Voltage Source Inverter (VSI). The inverter includes a specific JFET driver and a DC-link capacitor. All these elements have been validated over a wide temperature range, between 25°C and 200°C. The power device used, a 1200V, 15A, JFET from SiCED has been characterized up to 200°C. An innovative reliable protection circuit for normally-on devices is also presented and validated.

Published
2010

48. Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter

Author

Nicolas Gazel, Christian Martin, Hervé Morel, Remi Robutel, Dominique Bergogne, Cyril Buttay, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Ampère, Publications

Subjects
010302 applied physics, Conducted electromagnetic interference, Engineering, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, JFET, 02 engineering and technology, Inductor, 7. Clean energy, 01 natural sciences, Electromagnetic interference, EMI, Filter (video), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Inverter, Pharmacology (medical), Common-mode signal, business, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; In this paper, a high temperature EMI input filter for a SiC JFET inverter is designed and tested in operating conditions at 200°C. Inverter EMI issues, design procedure and characterizations of selected components are presented in details. The feasibility based on industrially available materials and components is demonstrated with a low temperature dependence of EMI Spectrum.

Published
2010

49. Normally-On SiC JFETs in power converters: Gate driver and safe operation

Author

Bergogne, Dominique, Risaletto, Damien, Dubois, Fabien, Hammoud, Asif, Morel, Hervé, Bevilacqua, Pascal, Allard, Bruno, Berry, Olivier, Meibody-Tabar, Farid, Rael, Stéphane, Meuret, Régis, Dhokkar, Sonia, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), Université de Lorraine (UL), SAFRAN, Grp Hispano Suiza, SAFRAN Group, and Ampère, Publications

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; In this paper, the authors propose a solution to provide self protection in a normally-On JFET voltage fed inverter. The solution is a plug-in to an existing Gate driver. An overview of JFET Gate driving serves as an introduction to the problem of self protection of inverters using Normally-On devices.

Published
2010

50. Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON)

Author

Bergogne, Dominique, Berry, Olivier, Dhokkar, Sonia, Hamieh, Youness, Meibody-Tabar, Farid, Meuret, Régis, Morel, Hervé, Rael, Stéphane, Tournier, Dominique, Ampère, Publications, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), Université de Lorraine (UL), SAFRAN, Grp Hispano Suiza, and SAFRAN Group

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Published
2010

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