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A study was conducted to examine the quasi-ballistic hole transport in nanoscale pMOSFETs using new self-consistent multi-subband Monte Carlo (MSMC) simulator. Findings reveal that ballistic ratios in pMOS are not much worse than in nMOS transistors.

The article studies a new negative bias temperature instability (NBTI) model based on hole trapping and thermally activated relaxation. Findings highlight that the new model is used for physics-based reliability prediction of NBTI effects as a function of time, temperature and stress regime.

A microscopic analysis of the fundamental effects related to quantum-well (QW) injection pumping is presented. The barrier-state populations have compensated the QW charging and the replenishing of stimulated carrier recombination under CW laser operation has caused persistent charge oscillations at the plasma frequency.

A novel ridge structure with antiguiding cladding layers is proposed for horizontal transverse modes and lasing characteristics are analyzed in order to suppress lasing in higher order transverse modes and improve kink levels in ridge-type 980-nm fiber pump semiconductor lasers. The ridge structure, kink levels are improved by suppressing spatial hole burning and lowering optical gains for higher order transverse modes, with an increase in the step d of the antiguiding cladding layers, which are located at both sides of a mesa.

Several stress and recovery experiments are conducted to explain the mechanisms that are shown to initiate the negative bias temperature instability (NBTI) in the pMOS transistors. Generation of defects near the silicon/silicon dioxide interface and hole trapping in the oxide are shown to be the two main mechanisms imvolved in the generation of NBTI.

A phenomenological method is used for isolating the hole-trapping and interface trap generation components during negative bias temperature instability (NBTI) stress in plasma nitrided oxide (PNO) p-MOSFETs. The robustness and uniqueness of the separation procedure of the isolation technique is demonstrated by degradation data obtained from a wide range of operating conditions and a wide variety of PNO processes.

A planar-gate HiGT with an n-type hole-barrier layer surrounding a p-Layer is described where the hole-barrier prevents the holes from flowing into the p-layer and stores them in the n-layer. It is seen that the planar HiGT provides a better tradeoff between collector-emitter saturation voltage turn-off loss than conventional IGBTs.

The hole mobility enhancement for 35-nm gate length pMOSFETs with strained channel induced by Ge preamorphization implantation (PAI) for source/drain (S/D) extension is examined. The findings suggest an improvement of 43 percent of hole effective mobility at 1.1-MV.cm vertical effective field

The absorption coefficient [alpha]([omega]), the transverse dielectric function [epsilon]([omega]), the optical conductivity [sigma]([omega]) and the reflectance R([omega]) calculated for an emeraldine salt conducting polymer in its crystalline 3-dimensional (3D) polaronic structure is presented. Kohn-Sham density functional theory (DFT) electronic wave functions and energies are implemented in the expression of the macroscopic transverse dielectric function in the framework of the band theory without the electron-hole interaction.

The k.p bandstructure program is used to measure the full band structure of [110] uniaxially stressed Si, with tensile and compressive stress ranging from 50 MPa to 2GPa in order to study the response of hole mobility and thermal velocity for short channel devices. The results have shown that the increase in both thermal velocity and mobility with compressive stress have continued up to approximately the 4-GPa limit of the simulations where each finally appears near saturation.

An extended Mie-Gruneisen molecular model is presented, which describes a bond-breakage process for O-Si equivalent to [O.sub.3] tetragonal molecules in silica and the trap-generation process that occurs during time dependent dielectric breakdown (TDDB) testing. The molecular model shows clearly that current included hole capture and hydrogen release could play critically important roles in the TDDB process.

Hole phonon velocity in a strained Si inversion layer grown on a relaxed SiGe substrate is theoretically investigated. The results suggest that 10 nm Si layer thickness strain on a relaxed Si0.7Ge0.3 allows one to take advantage of the strain-induced enhancements of carrier transport characteristics.

High-level leakage currents, which deteriorate the data retention time of highly integrated DRAMs are theoretically analyzed. It was demonstrated that anomaly in E(sub a)- V characteristics as well as the anomaly in I-V characteristics is caused by the spatial locality in the deep trap distribution.

The effects of electron-hole interactions on the electrical behavior of semiconductors from the low carrier density limit are studied. The electrical properties of the semiconductor devices below the Mott density are analyzed at a temperature level of 77 degrees Kelvin. Results show that a band-gap narrowing above the Mott transition produces localized excitonic states in the lower density regions.

The various characteristics exhibited by the ow-temperature photoluminescence (PL) from condensed electron-hole (e-h) pairs in p-type silicon substrates are determined. The trenched Si atoms are shown to demonstrate an enhanced photoluminescence intensity.

The ultrashort transient absorption spectroscopy technique is employed to explain the carrier dynamics exhibited by the different [beta]-[Ga.sub.2][O.sub.3] nanowires. The relaxation dynamics of the nanowires is shown to be highly affected by the recombination mechanisms.

Several investigations are conducted to explain the low-field hole mobility exhibited in the strained Ge and III-V p-channel inversion layers with high-[kappa] insulators. The III-Vs are shown to be much more sensitive to the interfacial optical phonons, as compared to the Ge insulators.

The synthesis, structure and the persistent luminescence and up conversion photostimulated luminescence properties exhibited by the nondoped [Mg.sub.2]Sn[O.sub.4] material are analyzed. The shallow, as well as the deep traps present in the material are shown to be highly responsible for the luminescence.

The photoluminescence properties of nanocrystalline titanium dioxide films consisting of predominantly anatase nanoparticles are analyzed. Microscopic models are presented that have described the effects of temperature and ambient conditions on photoluminescence of nanocrystalline titanium dioxide films.

A strategy is described for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C-H moieties by nitrogen atoms in oligoacenes. The demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes has provided new opportunities for designing high-performance ambipolar organic semiconductors.

Secondary ion mass spectroscopy and photoemission spectroscopy has shown that aliovalent ion substitution of Mg at the La site is not the main source of hole doping and the Fermi level has not shifted even in heavily doped LaCuOSe Mg. The studies have shown that planar defects composed of Cu and Se deficiencies are created in LaCuOSe, which are explained by the existence of a degenerate low-mobility layer and formation of complex Cu and Se vacancy defects with the help of generalized gradient approximation band calculations.

Self-threading polythiophene is described whose conjugated molecular wire is sheathed within its own cyclic side chains. The defect-free insulating layer has prevented electronic cross-communication between the adjacent polythiophene backbone in the solid film and the covalently linked cyclic side chains have extended the effective conjugation length of the interior polythiophene backbone.

The structural and optical properties of the crystalline Ge nanocluster-embedded Ge[O.sub.x] films deposited under various power densities of the assisting C[O.sub.2] laser beam by a using a laser-assisted plasma enhanced chemical-vapor deposition system are examined. The photoluminescence (PL) characteristics, including the spectral position, decay curve and intensity of the emission bands, are attributed to the quantum confinement effect.

The surface electron and hole availability is tuned by the adsorption of [Cl.sub.2] or [O.sub.2] to study the role of electrons and holes in the electronically excited oxidation of adsorbed CO on Ti[O.sub.2](110). The study results provide evidence for the electronically excited CO oxidation reaction which is caused by an electron-mediated process in contrast to [O.sub.2] desorption which is mediated by holes.

The article presents a new approach, which employs the pulsed laser ablation technique for the synthesis of aluminum nanoparticles in the water confined plasma. The laser fluence is shown to be the main factor that affects the spherical shapes and sizes of the nanoparticles.

Several experimental measurements are conducted to explain the different polarization effects that are exhibited by the thallium bromide planar x-ray detectors. The spectroscopic characteristics, peak height and energy resolution of the system are shown to significantly reduce after the radiation threshold limit.

A study was conducted to examine the influence of three different fullerene derivatives on the charge generation and recombination dynamics of polymer/fullerene bulk heterojunction (BHJ) solar cell blends. The internal electric field in combination with polarization effects and the dynamic nature of polarons in the BHJ solar sell are the key features to overcome electron-hole interaction to form free extractable charges.

Illumination and annealing are used for studying the modification of electrical properties in poly(3-hexylthiophene) (P3HT) thin film. The studies have shown that with the illumination, the bulk trap density has increased and the hole mobility of P3HT has decreased.

The electron and hole charging and discharging processes in the direct tunneling regime of Ge nanocrystals (NCs) embedded in the Si[O.sub.2] of metal/oxide/semiconductor transistors are studied. The moderate increase in the trap densities by about one order of magnitude has not provided a proper explanation for the observed short hole retention times, however an electron current into the NCs during hole retention has limited the retention times.

A method of C:Si codoping in AlN is described in view of the extremely low hole concentration in p-type AlN. The results have shown that the codoping of C:Si is an effective p-type doping method in AlN.

The features of band hybridization and zero-field spin-splittingin InAs/AlSb/GaSb quantum wells (QWs) are analyzed. The results are used for understanding why electrons and holes are separated and why relatively high mobilities for electrons and holes are achieved in InAs/AlSb/GaSb type II and broken-gap QWs.

A revised mechanism is described for the hole injection enhancement by analyzing a prototype interface of pentacene/LiF/indium tin oxide (ITO ) anode. The studies have shown that the reduction in the hole injection barrier is not a major factor for the hole injection enhancement and that a LiF insulating buffer layer has enhanced both injection barriers and tunneling through the barrier when a bias is applied.

The electronic structures of the interfaces between 2-amino-4,5-imidazoledicarbonitrile (AIDCN) and electrode metals (Ag and Al), as well as the bulk of AIDCN, are analyzed by using photoemission spectroscopy (PES). The results have shown that a sharp interface is formed between Ag surface and AIDCN overlayers, whereas the PES spectra of the AIDCN/Al interface has displayed not a peak but a diffuse tailing structure in the HOMO region until the bulklike phase is formed.

The application of the different thallium hyperfine clocks in determining the rate of hole transfer exhibited by the oxidized porphyrin dyads is discussed.

The article presents a new approach, which can be employed for the generation of new sites that can be used for trapping photogenerated holes on the surfaces of the rutile Ti[O.sub.2] nanoparticles. The trapping activity is shown to lead to a significant enhancement in the photocatalytic activity of the system.

The Laplace deep-level transient spectroscopy technique is employed to explain the properties of the new substructures of H4 and H5 hole traps. The activation energies and the microscopic nature exhibited by these traps are also analyzed.

Several measurements are conducted to explain the various electronic properties of [Al.sub.0.56][In.sub.0.44]Sb/[Ga.sub.0.5][In.sub.0.5]Sb heterostructure that are grown by the molecular beam epitaxy technique. The impact of the quantum well thickness on the electron Hall mobility of the compounds is also determined.

Several studies are conducted to explain the different optical, as well as the magnetic properties of the indium-doped ZnO nanowires. The coercive field for the nanowires is shown to significantly increase with the content.

Electron beam induced selfconsistent charge transport and secondary electron emission in insulators are described by using an electron-hole flight-drift model implemented by an iterative computer simulation. The time dependent secondary electron emission rate and the spatial distributions of currents, charges, field, and potential are obtained, whereas the switching-on of the secondary electron emission has proceeded over milliseconds because of selfconsistent charging, the switching-off process has occurred much faster, over femtoseconds.