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1. Polarization Doping in a GaN-InN System—Ab Initio Simulation

2. Polarization doping— Ab initio verification of the concept: Charge conservation and nonlocality

3. The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures

4. Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

5. p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

6. Wurtzite quantum well structures under high pressure

7. Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements

8. Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures

9. Hydrostatic pressure dependence of indirect and direct excitons in InGaN/GaN quantum wells

10. Magneto-transport in inverted HgTe quantum wells

11. High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

12. Switching of exciton character in double InGaN/GaN quantum wells

13. Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies

14. Switching of exciton character in double InGaN/GaN quantum wells

15. Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

16. Antireflective Photonic Structure for Coherent Nonlinear Spectroscopy of Single Magnetic Quantum Dots

17. Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures

18. Searching for Indirect Excitons in Coupled Double InGaN/GaN Quantum Wells

19. Correlation of optical and structural properties of GaN/AlN multi-quantum wells— Ab initio and experimental study

20. Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

21. Advantage of In- over N-polarity for disclosure of p-type conduction in InN:Mg

22. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN–GaAlN quantum wells grown by molecular beam epitaxy

23. Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

24. Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells

25. Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells

26. High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis

27. Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals

28. Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells

29. Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

30. Thermal carrier emission and nonradiative recombinations in nonpolar(Al,Ga)N/GaN quantum wells grown on bulk GaN

31. Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities

32. Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals

33. Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

34. Radiative recombination limited lifetimes in non-polar (Al,Ga)N/GaN quantum wells grown on bulk GaN crystals

35. Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN

36. Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well

37. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

38. Electrical transport phenomena in magnesium-doped p-type GaN

39. Parallel conduction in p-type gallium nitride homo-structures

40. Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals

41. Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates

42. Calibration of the PEC Etching Method of GaN

43. Kinetics of Low Temperature Activation of Acceptors in Magnesium-doped Gallium Nitride Epilayers Grown by Metal Organic Vapor Phase Epitaxy

44. Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals

45. Raman and PL Study of Thick HVPE-grown GaN

46. Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

47. Amélioration de l’efficacité radiative dans les puits quantiques à base d’(Al,Ga,In)N pour les composants optoélectroniques

48. Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range

49. Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures

50. Small internal electric fields in quaternary InGaAlN heterostructures

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