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Cross‐sectional submicronic Laue diffraction has been successfully applied to HgCdTe/CdZnTe heterostructures to provide accurate strain profiles from substrate to surface. Combined with chemical‐sensitive techniques, this approach allows correlation of lattice‐mismatch, interface compositional gradient and strain while isolating specific layer contributions which would otherwise be averaged using conventional X‐ray diffraction. The submicronic spatial resolution allowed by the synchrotron white beam size is particularly suited to complex infrared detector designed structures such as dual‐color detectors. The extreme strain resolution of 10−5 required for the very low lattice‐mismatch system HgCdTe/CdZnTe is demonstrated. [ABSTRACT FROM AUTHOR]

Ion implantation is an interesting method to dope semiconducting materials such as zinc oxide provided that the implantation-induced defects can be subsequently removed. Nitrogen implantation followed by anneals under O2 were carried out on zinc oxide nanowires in the same conditions as in a previous study on bulk ZnO [Perillat-Merceroz et al., J. Appl. Phys. 109, 023513 (2011)], allowing a direct comparison of the defect recovery mechanisms. Transmission electron microscopy and cathodoluminescence were carried out to assess the effects of nitrogen implantation and of subsequent anneals on the structural and optical properties of ZnO nanowires. Defect recovery is shown to be more effective in nanowires compared with bulk material due to the proximity of free surfaces. Nevertheless, the optical emission of implanted and annealed nanowires deteriorated compared to as-grown nanowires, as also observed for unimplanted and annealed nanowires. This is tentatively attributed to the dissociation of excitons in the space charge region induced by O2 adsorption on the nanowire surface. [ABSTRACT FROM AUTHOR]

We have examined the crystallographic structure of GaAs/InP interfaces obtained by wafer fusion following different procedures. Plan-view and cross-sectional transmission electron microscopy reveal that the interface is not only composed of a regular array of two sets of edge dislocations and is more complex than generally supposed. If a twist is created due to misalignment of the two substrates, the dislocations are not edge dislocations but also have a screw component. Dislocations for which the Burgers vectors have a component normal to the interface are also present. Those dislocations probably result from steps and some of them accommodate the tilt between the two substrates. Inclusions and voids as well as a low number of volume dislocations are present in all the samples. The observed volume dislocation density near the interface lies in the 10[sup 5]–10[sup 7] cm[sup -2] range and these volume dislocations may be associated with thermal mismatch. The origin of all these defects is discussed. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Deals with a study which investigated the epitaxial growth mechanism of ZnTe on (001) CdTe. Background to the study; Experimental procedure; Results and discussion.

Presents a study which used high-resolution electron microscopy to investigate the morphology of ultrathin pseudomorphic zinc telluride and manganese telluride strained layers grown in cadmium telluride. Measurement of the local distortions of the crystal lattice; Principles of distortion analysis method in the experimental images of the cadmium telluride/zinc telluride superlattices; Comparison with results obtained by high-resolution x-ray diffraction; Limitation of the method.

Presents a study which examined implantation-enhanced interdiffusion of CdTe-ZnTe strained heterostructures using photoluminescence channeling, transmission electron microscopy and secondary-ion-mass spectrometry. Details on studies of implantation-enhanced interdiffusion of semiconductor interfaces; Experimental conditions and samples; Implantation in bulk materials and heterostructures.

Presents a study that described the growth of cadmium-manganese-tellurium by molecular-beam epitaxy. Information on reflection high-energy electron-diffraction oscillations; Spectroscopic properties of cadmium compound alloys; Data on liquid-helium-temperature photoluminescence and liquid-nitrogen-temperature cathodoluminescence; Use of transmission electron microscopy.