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1. Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films

2. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

3. Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories

4. Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology

5. Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films

6. First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

7. The Long-Term Trends of the Association Between Falls Among the Elderly in Taiwan and their Utilization of Medical Facilities

8. Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

9. Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba0.95Ca0.05)(Ti0.93Sn0.07)O3 Lead-Free Piezoceramic Sheets

10. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

11. Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

12. Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

14. Retraction notice to 'Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment' [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]

15. Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba([Zr.sub.0.1][Ti.sub.o.9])[O.sub.3] gated oxide film

16. The Long-Term Trends of the Association Between Falls Among the Elderly in Taiwan and their Utilization of Medical Facilities

17. Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices

18. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

19. Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory

20. Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

21. Low switching-threshold-voltage zinc oxide nanowire array resistive random access memory

22. Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

23. Characteristics improvement of Li0.058(K0.480Na0.535)0.966(Nb0.9Ta0.1)O3lead-free piezoelectric ceramics by LiF additions

24. The inferences of ZnO additions for LKNNT lead-free piezoelectric ceramics

25. Dielectric characteristics investigation of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3ferroelectric thin films

26. Resistive switching behavior and optical properties of transparent Pr-doped ZnO based resistive random access memory

27. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

28. Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba

29. Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure

30. Electrical and Ferroelectric Properties of the Bi3.9La0.1Ti2.9V0.1O12 (BLTV) Thin Films

31. Fabrication and Switching Characterizations of Copper Oxide Thin Films for Applications in Resistive Random Access Memory Devices

32. Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

33. Photoluminescence and Physical Properties of the Nano-Zn2SiO4:Mn Phosphor Powder under the Nitrogen Atmosphere

34. Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

35. The Effect of Post-Conventional Thermal Annealing Process on the Photoluminescence Characteristics of Si+-Implanted SiO2 Thin Films

36. Electrical and Physical Properties of (K0.5Na0.5)NbO3 Ferroelectric Thin Films

37. RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

38. Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid

39. Controllable Set Voltage in Bilayer ZnO:SiO2/ZnO x Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation

40. Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

41. Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory

42. Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr0.1Ti0.9)O3 Film–Insulator-Silicon Structure

43. Ferroelectric, Dielectric, and Physical Characteristics of (Ba1-xSrx)(Ti1-yZry)O3 Thin Films

44. Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices

45. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode

46. Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices

47. Effect of Pre-Calcined Method on Dielectric, Ferroelectric, and Piezoelectric Properties of Lead-Free Piezoelectric Lix(K0.5Na0.5)1-x(Nb0.8Ta0.2)O3 Ceramics

48. Develop Dual-Mode DGS Bandpass Filters Using High Quality Factor Aluminum Oxide Ceramic Substrates

49. Ferroelectric and Physical Characteristic of the La and V Doped on Bi4Ti3O12 Thin Film Prepared by RF Magnetron Sputtering Method

50. Preparation and Characteristic Development of Nano Zn2SiO4: Mn Green Phosphors by La2O3 Doping

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