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The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs) implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB designs are investigated for Q- and W-bands and a push–pull amplifier is investigated at Q-band. The Q-band, class-AB PA achieves a saturated output power of 15 dBm and power-added efficiency (PAE) of 27% from a 2-V supply. The W-band, class-AB PA achieves a saturated output power of 12.4 dBm and PAE of 14.2% from a 2-V supply. The performance demonstrates the high efficiency possible for mm-wave PAs in a SOI process. [ABSTRACT FROM PUBLISHER]

A fully-integrated Q-band (40–45 GHz) bidirectional transceiver is demonstrated in a 0.12-\mu\m SiGe BiCMOS technology. The RF front-end design eliminates the need for transmit/receive switches by demonstrating a novel PA/LNA circuit. The transceiver has a transmit conversion gain of 35 dB with a 3-\dB bandwidth of 4 GHz. The OP1dB is 8.5 dBm and Psat is 9.5 dBm. The transceiver has a receive conversion gain of 34 dB with a 3-\dB bandwidth of 3 GHz. The noise figure is 4.7 dB and OP1dB is -5 dBm at 43 GHz. The chip consumes 119.4 mW when transmitting and 54 mW when receiving, and overall chip size is 1.6 mm\times 0.8 mm including pads. To the author's knowledge, this work represents the first switchless millimeter-wave bidirectional transceiver in a CMOS or BiCMOS process. [ABSTRACT FROM PUBLISHER]

A broadband amplifier is realized with cascaded stagger-tuned stages that are equalized for high bandwidth and low gain ripple. The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback amplifier and a constructive wave amplifier, which achieves low group delay. The broadband amplifier is implemented in a 0.12-\mu\ m SiGe BiCMOS process and achieves a 3-dB bandwidth of 102 GHz. The gain is 10 dB with 1.5-dB gain-ripple and group-delay variation under \pm6 ps over the entire 3-dB bandwidth. The chip occupies an area of 0.29 \ mm^2 including the pads and consumes 73 mW from a 2-V supply. [ABSTRACT FROM PUBLISHER]

A W-band, cascaded constructive wave amplifier realizes high gain and bandwidth in a 0.12 \mum SiGe BiCMOS process. The amplifier achieves 37.5 dB gain at 90 GHz with a 3 dB bandwidth of 14.6 GHz. Consequently, this amplifier demonstrates a gain-bandwidth product as high as 1,095 GHz. At nominal bias condition, input and output return losses are better than 11 dB over the entire 3 dB bandwidth and the output-referred P1 dB is -5.5 dBm. The amplifier consumes 65 mW from a 1.8 V at a nominal bias condition and 130 mW from a 2 V at a high-gain bias condition. The chip occupies an area of 0.39 mm^2 including the pads. [ABSTRACT FROM PUBLISHER]