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AlGaN/GaN high-electron mobility transistor's (HEMT's) off-state breakdown is investigated using drain-current injection techniques with different injection current levels. Competitions between the source leakage and gate leakage, pure leakage and impact ionization, and source- and gate-injection-induced impact ionization during the drain-injection measurement are discussed in detail. It was found that the breakdown originates from the source/gate leakage at low drain injection levels but is dominated by source/gate-induced impact ionization process at high drain injection currents. The source-induced impact ionization usually precedes the gate-induced impact ionization in low-gate leakage devices, resulting in a premature three-terminal off-state breakdown. We also found that the gate-bias value affects the breakdown voltage in the conventional three-terminal off-state breakdown I-V measurement and should be carefully considered. [ABSTRACT FROM AUTHOR]

Cotton fiber is one of the main raw materials for the textile industry. In recent years, many cotton fiber quality QTL have been identified, but few were applied in breeding. In this study, a genome wide association study (GWAS) of fiber-quality traits in 265 upland cotton breeding intermediate lines (GhBreeding), combined with genome-wide selective sweep analysis (GSSA) and genomic selection (GS), revealed 25 QTL. Most of these QTL were ignored by only using GWAS. The CRISPR/Cas9 mutants of GhMYB_D13 had shorter fiber, which indicates the credibility of QTL to a certain extent. Then these QTL were verified in other cotton natural populations, 5 stable QTL were found having broad potential for application in breeding. Additionally, among these 5 stable QTL, superior genotypes of 4 showed an enrichment in most improved new varieties widely cultivated currently. These findings provide insights for how to identify more QTL through combined multiple genomic analysis to apply in breeding. [ABSTRACT FROM AUTHOR]

The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density. [ABSTRACT FROM AUTHOR]

In this paper, we report the device performance of a high-voltage enhancement-mode (E-mode) GaN MOSHEMT on silicon substrate. Normally off operation is realized by a self-terminated precision gate recess process on an optimized high-electron mobility transistor structure. The GaN MOSHEMT is fully pinched off at zero gate bias, suggesting a "true" normally off operation. The threshold voltage is 0.4 V with a drain current density of 1 μA/mm as the criteria. The device with 15-μm gate-drain distance and 100-μm gate width exhibits a maximum drain current of 356 mA/mm at 8-V gate bias. The on/off current ratio of the device is larger than 1010 with a subthreshold slope of 80 mV/dec. The gate leakage current is below 10-7 mA/mm up to 9-V gate bias. The off-state breakdown voltage (BV) is as high as 1528 V (880 V) measured with floating (grounded) silicon substrate at a drain leakage current criterion of 5 μA/mm. The specific on-resistance (RON,SP) of the device is 2.79 mΩ⋅cm², and the power figure of merit (BV²/RON,SP) is 277 MW/cm². High-voltage pulsed I-V measurement indicates that the dynamic on-resistance is only 1.6 times the static one with a pulse width of 10 μsat 400-V off-state quiescent drain bias. The high performance of the normally off GaN MOSHEMT is supposed to benefit from the high quality low pressure chemical vapor deposition Si3N4 passivation layer and the advanced E-mode device fabrication process. [ABSTRACT FROM AUTHOR]

The compatibility of Au-free (Ti/Al/Ti/TiN) ohmic contacts in the gate-first double-metal (GFDM) process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) and Schottky barrier diodes (SBDs) on the same 150-mm wafer was investigated and discussed for the first time, including contact pretreatments, Al diffusion in dielectric layers, and vias (contact windows between two metal layers) etching conditions. All of these steps are crucial to ohmic contacts aswell as overall AlGaN/GaN device fabrication process. With the optimized ohmic contacts steps, not only an extremely low ohmic contact resistance ( RC) value of 1.07 Ω·mm but also an excellent uniformity on the 150-mm wafer was obtained. The performance and uniformity of the MIS-HEMTs and SBDs based on the optimized GFDM process were also discussed. [ABSTRACT FROM AUTHOR]

Calcium (Ca2+) is necessary for fiber cell development in cotton (Gossypium hirsutum), both as a cell wall structural component and for environmental signaling responses. It is also known that potassium (K+) plays a critical role in cotton fiber cell elongation. However, it is unclear whether Ca2+ integrates its activities with K+ to regulate fiber elongation. Here, we report the novel discovery that Ca2+ deficiency, when integrated with K+ signaling, promotes fiber elongation. Using inductively coupled plasma-mass spectrometry (ICP-MS), we determined dynamic profiles of the ionome in ovules and fibers at different developmental stages, and found that a high accumulation of macroelements, but not Ca2+, was associated with longer fibers. Using an in vitro ovule culture system, we found that under Ca2+-deficient conditions, sufficient K+ (52 mM) rapidly induced ovule and fiber browning, while reduced K+ (2 or 27 mM) not only suppressed tissue browning but also altered fiber elongation. Reduced K+ also enhanced reactive oxygen species scavenging ability and maintained abscisic acid and jasmonic acid levels, which in turn compensated for Ca2+ deficiency. Ca2+ deficiency combined with reduced K+ (0 mM Ca2+ and 27 mM K+) produced longer fibers in cultured ovules, due to cell wall loosening by phytosulfokine (PSK), expansin (EXP), and xyloglucan endotransglycosylase/hydrolase (XTH), and an increase of the K+ content of fiber cells. Using transgenic cotton, we showed that the CBL-INTERACTING PROTEIN KINASE 6 (GhCIPK6) gene mediates the uptake of K+ under Ca2+-deficient conditions. This study establishes a new link between Ca2+, K+, and fiber elongation. [ABSTRACT FROM AUTHOR]

High-quality cotton fibre equates to a more comfortable textile. Fibre length is an important index of fibre quality. Hydrogen peroxide (H2O2) acts as a signalling molecule in the regulation of fibre elongation. Results from in vitro ovule culture suggest that the alteration of fibre cell H2O2 levels affects fibre development. Ascorbate peroxidase (APX) is an important reactive oxygen species (ROS) scavenging enzyme, and we found that GhAPX1AT/DT encoded one member of the previously unrealized group of cytosolic APXs (cAPXs) that were preferentially expressed during the fibre elongation stage. Transgenic cottons with up- and down-regulation of GhAPX1AT/DT were generated to control fibre endogenous levels of H2O2. Suppression of all cAPX (IAO) resulted in a 3.5-fold increase in H2O2 level in fibres and oxidative stress, which significantly suppressed fibre elongation. The fibre length of transgenic lines with over-expression or specific down-regulation of GhAPX1AT/DT did not show any obvious change. However, the fibres in the over-expression lines exhibited higher tolerance to oxidative stress. Differentially expressed genes (DEGs) in fibres at 10 days post-anthesis (DPA) of IAO lines identified by RNA-seq were related to redox homeostasis, signalling pathways, stress responses and cell wall synthesis, and the DEGs that were up-regulated in IAO lines were also upregulated in the 10 DPA and 20 DPA fibres of wild cotton compared with domesticated cotton. These results suggest that optimal H2O2 levels and redox state regulated by cytosolic APX are key mechanisms regulating fibre elongation, and dysregulation of the increase in H2O2 induces oxidative stress and results in shorter fibres by initiating secondary cell wall-related gene expression. [ABSTRACT FROM AUTHOR]

Background: Since upland cotton was introduced into China during the 1920s-1950s, hundreds of inbreed cultivars have been developed. To explore the molecular diversity, population structure and elite alleles, 503 inbred cultivars developed in China and some foreign cultivars from the United States and the Soviet Union were collected and analyzed by 494 genome-wide SSRs (Simple Sequence Repeats). Methods: Four hundred and ninety-four pairs of SSRs with high polymorphism and uniform distribution on 26 chromosomes were used to scan polymorphisms in 503 nation-wide upland cottons. The programming language R was used to make boxplots for the phenotypic traits in different environments. Molecular marker data and 6 fiber quality traits were analyzed by the method of MLM (mixed linear model) (P + G + Q + K) in the TASSEL software package on the basis of the population structure and linkage disequilibrium analysis. The loci of elite allelic variation and typical materials carrying elite alleles were identified based on phenotypic effect values. Results: A total of 179 markers were polymorphic and generated 426 allele loci; the population based on molecular diversity was classified into seven subpopulations corresponding to pedigree origin, ecological and geographical distribution. The attenuation distance of linkage disequilibrium dropped significantly up to 0-5 cM. Association mapping for fiber quality showed that 216 marker loci were associated with fiber quality traits (P < 0.05) explaining 0.58 % ~ 5.12 % of the phenotypic variation, with an average of 2.70 %. Thirteen marker loci were coincident with other studies, and three were detected for the same trait. Seven quantitative trait loci were related to known genes in fiber development. Based on phenotypic effects, 48 typical materials that contained the elite allele loci related to fiber quality traits were identified and are widely used in practical breeding. Conclusions: The molecular diversity and population structure of 503 nation-wide upland cottons in China were evaluated by 494 genome-wide SSRs, and association mapping for fiber quality revealed known and novel elite alleles. The molecular diversity provides a guide for parental mating in cotton breeding, and the association mapping results will aid in the fine-mapping genes related to fiber quality traits and facilitate further studies on candidate genes. [ABSTRACT FROM AUTHOR]

We present a methodology and the corresponding experimental results to identify the exact location of the traps that induce hot electron trapping in AlGaN/GaN heterostructures grown on Si substrates. The methodology is based on a combination of lateral and vertical electrical stress measurements employing three ohmic terminals on the test sample structure with different GaN buffer designs. By monitoring the evolution of the lateral current during lateral as well as vertical stress application, we investigate the trapping/detrapping behaviors of the hot electrons and identify that the traps correlated with current degradation are in fact located in the GaN buffer layers. The trap activation energies (0.38-0.39 eV and 0.57-0.59 eV) extracted from either lateral or vertical stress measurements are in good agreement with each other, also confirming the identification. By further comparing the trapping behaviors in two samples with different growth conditions of an unintentionally doped GaN layer, we conclude that the traps are most likely in the unintentionally doped GaN layer but of different origins. It is suggested that the 0.38-0.39 eV trap is related to residual carbon incorporation while the 0.57-0.59 eV trap is correlated with native defects or complexes. [ABSTRACT FROM AUTHOR]

High-temperature transport properties in high-mobility lattice-matched InAlN/GaN heterostructures have been investigated. An interesting hysteresis phenomenon of the two dimensional electron gas (2DEG) density is observed in the temperature-dependent Hall measurements. After hightemperature thermal cycles treatment, the reduction of the 2DEG density is observed, which is more serious in thinner InAlN barrier samples. This reduction can then be recovered by light illumination. We attribute these behaviors to the shallow trap states with energy level above the Fermi level in the GaN buffer layer. The electrons in the 2DEG are thermal-excited when temperature is increased and then trapped by these shallow trap states in the buffer layer, resulting in the reduction and hysteresis phenomenon of their density. Three trap states are observed in the GaN buffer layer and CGa may be one of the candidates responsible for the observed behaviors. Our results provide an alternative approach to assess the quality of InAlN/GaN heterostructures for applications in high-temperature electronic devices. [ABSTRACT FROM AUTHOR]

High-temperature transport properties in high-mobility lattice-matched InAlN/GaN heterostructures have been investigated. An interesting hysteresis phenomenon of the two dimensional electron gas (2DEG) density is observed in the temperature-dependent Hall measurements. After high-temperature thermal cycles treatment, the reduction of the 2DEG density is observed, which is more serious in thinner InAlN barrier samples. This reduction can then be recovered by light illumination. We attribute these behaviors to the shallow trap states with energy level above the Fermi level in the GaN buffer layer. The electrons in the 2DEG are thermal-excited when temperature is increased and then trapped by these shallow trap states in the buffer layer, resulting in the reduction and hysteresis phenomenon of their density. Three trap states are observed in the GaN buffer layer and CGa may be one of the candidates responsible for the observed behaviors. Our results provide an alternative approach to assess the quality of InAlN/GaN heterostructures for applications in high-temperature electronic devices. [ABSTRACT FROM AUTHOR]

We report the interface characterization of Al2O3/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al2O3/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density Dit in MOS structures, Dit in the device with AlN was determined to be in the range of 1011-1012eV-1cm-2, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well. [ABSTRACT FROM AUTHOR]

A novel simple approach to extract parasitic source and drain resistances of high electron mobility transistors (HEMT) is presented. This method could obtain the parasitic resistances by determining the portion of channel resistance involved in the measured end-resistance based on the identification of the channel position corresponding to the measured floating-gate voltage with the floating-gate, drain- and source-current-injection configurations on a single device. The technique is demonstrated on AlGaN/GaN HEMTs. It is found that the ratio of the channel resistance involving in the end-resistance to the total channel resistance approaches to a constant independent on the gate length, which could simplify the practical application of this novel method. The experimental results show that the source and drain resistances extracted by this method coincide with series resistance extracted by traditional Transmission Line Model (TLM) measurement. [ABSTRACT FROM AUTHOR]

The oxidation mechanism in self-terminating wet etching technique with thermal oxidation of AlGaN layer followed by etching in KOH solution is investigated. Spike-shape remnants of oxidised AlGaN are observed at the initial stage of wet etching in KOH solution, which could be completely etched away after enough etching time. Transmission electron microscope/energy dispersive spectroscopy analysis indicates the existence of crystalline AlGaN inside the remnants. Finally, a possible explanation is given that the oxide channels from AlGaN surface towards AlGaN/GaN interface generated during thermal oxidation are firstly etched away at the initial stage of KOH wet etching, then after enough time these remnants with non-c axis crystal orientation surfaces exposed to KOH solution could be completely etched away leaving GaN layer beneath unaffected, which realises self-terminating etching. [ABSTRACT FROM AUTHOR]

A self-terminating gate recess wet etching technique with thermal oxidation of the AlGaN/GaN layer followed by etching in potassium hydroxide (KOH) solution was recently proposed by the present authors for normally-off AlGaN/GaN metal-oxide semiconductor field effect transistors (MOSFETs). In this present reported work, the oxidation process inside the AlGaN/GaN heterostructure involved in this technique was analysed using several material characterisation methods. The measurement results show that the concentration and depth of the O element distribution increase with increased thermal oxidation temperature. It is worth noting that after 650°C oxidation almost no O element could be found in the GaN layer and the O element mainly locates in the AlGaN layer with an obvious correlation between the distribution of Al and O elements, where the Al(Ga)-oxide was detected by X-ray photoelectron spectroscopy, which could be etched by 70°C KOH. Thus, self-terminating wet etching on the AlGaN/GaN material is achieved. [ABSTRACT FROM AUTHOR]

300°C operation of a normally-off AlGaN/GaN metal-oxide semiconductor field-effect transistor (MOSFET) is successfully demonstrated, which is fabricated using a self-terminating gate recess etching technique. At 300°C, by employing a 15 nm-thick Al2O3 as the gate dielectric deposited by atomic layer deposition, the fabricated normally-off MOSFET exhibits a threshold voltage (Vth) of 3.2 V, a low off-state leakage current of ~10-7 A/mm and a low forward gate leakage current of ~10-7 A/mm. Thus, a high on/off current ratio of ~ 106 is obtained. Furthermore, the normally-off MOSFET also exhibits small variations in terms of its Vth from room temperature to 300°C with a maximum relative variation of 6.7% in a such temperature range. These results make this normally-off AlGaN/GaN MOSFET very promising for high-temperature digital electronics. [ABSTRACT FROM AUTHOR]