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A thin TiO2 semiconductor film embedded between two metal electrodes works as a memristor after being formed by soft breakdown. The forming creates a nano-filament that penetrates through the poorly conducting TiO2 film and connects the electrodes conductively. While previous works characterized the nano-filament properties (shape, composition, and resistivity) by electron microscopy techniques, we present a characterization by electrical measurements. In a typical memristor, both electrodes are made of normal metals. We study the metal/TiO2/metal memristors with a bottom electrode made of a superconducting NbN layer and a top electrode made of a normal (Pt) or superconducting (Nb) metal. The nano-filament connecting the electrodes touches the bottom electrode as a point contact, thus allowing us to perform point-contact Andreev reflection spectroscopy of the NbN superconductor. The spectra, measured below the critical temperature (15 K) of NbN, are analyzed theoretically. The analysis reveals the presence of one nano-filament and determines the nano-filament resistance, Sharvin resistance of the point contact, and Maxwell resistance of the electrodes. Moreover, it shows that the nano-filament is a conical-shaped Ti-like metal point contact with a tip diameter of ∼3–5 nm, Fermi velocity of 2 × 10 6 m / s , and low-temperature resistivity of ∼ 10 − 8 – 10 − 7 Ω m. Thus, the nano-filament in our device is not the Ti4O7 phase observed in previous works. Remarkably, the point contact spectrum of the superconducting NbN layer shows the Andreev peak typical for ballistic transport. This is because the point contact probes the NbN layer through a thin Al layer that mimics superconductivity of NbN via the proximity effect and eliminates the effects of tunneling and disorder. [ABSTRACT FROM AUTHOR]

A successful hexagonal Cu 2 S p-type semiconductor thin film using DC magnetron sputtering is reported. Films with thickness gradients were deposited by taking advantage of deposition geometry and target dimensions. X-ray diffraction (XRD) analysis confirmed the exclusive formation of the hexagonal Cu 2 S phase. Elemental composition and thickness dependence with the sample position were determined using energy-dispersive x-ray spectroscopy. Optical properties, including the optical bandgap, refractive index, and extinction coefficient, were assessed by modeling transmittance spectra. The Tauc–Lorentz oscillator and Drude models were employed for this purpose. XRD data analysis successfully determined the film thickness (t X R D ) as a function of the sample position, aligning well with thickness values (t T) derived from transmittance spectra analyses. These results were further supported by film thickness values (t S E M ) obtained from cross-sectional SEM images. Charge carrier density and mobility, extracted from the optical models, were found to be consistent with DC electrical measurements. AC impedance curves were effectively modeled with RL–RC parallel circuits. The results indicate that the inductance (L) and capacitance (C) components of the films increase with decreasing film thickness. [ABSTRACT FROM AUTHOR]

GaCH2, a free radical thought to play a role in the chemical vapor deposition of gallium-containing thin films and semiconductors, has been spectroscopically detected for the first time. The radical was produced in a pulsed discharge jet using a precursor mixture of trimethylgallium vapor in high pressure argon and studied by laser-induced fluorescence and wavelength resolved emission techniques. Partially rotationally resolved spectra of the hydrogenated and deuterated species were obtained, and they exhibit the nuclear statistical weight variations and subband structure expected for a 2A2–2B1 electronic transition. The measured spectroscopic quantities have been compared to our own ab initio calculations of the ground and excited state properties. The electronic spectrum of gallium methylene is similar to the corresponding spectrum of the aluminum methylene radical, which we reported in 2022. [ABSTRACT FROM AUTHOR]

Lanthanum-doped barium stannate (La-doped BaSnO3 or LBSO) has attracted the attention of researchers and engineers because of its wide range of potential applications in electronic and optoelectronic devices. This is due to a combination of its exceptional room temperature (RT) mobility of 320 cm2 V−1 s−1 and high visible range transparency. However, epitaxial LBSO films made using strategic deposition techniques such as molecular beam epitaxy, pulsed laser deposition, and magnetron sputtering show comparatively low RT mobilities, between 24 and 183 cm2 V−1 s−1, and an accurate description of these RT mobilities is still sought. Herein, we provide the underlying scattering mechanisms related to longitudinal optical (LO) phonons, threading dislocation, and ionized donor defects to elucidate the RT mobilities in LBSO epitaxial films. It was found that the total mobility estimated using Matthiessen's rule provided strong quantitative agreement with experimental results. The large polaron mobility based on LO phonon scattering dominated the whole spectrum of electron concentrations in this system. It was an upper bound mobility, i.e., the mobility limit attained at 320 cm2 V−1 s−1. The calculated mobility associated with LO phonon and threading dislocation scatterings adequately verified the experimental results between 150 and 183 cm2 V−1 s−1. The predicted results for all three scattering types were predominant in experimental data at less than 150 cm2 V−1 s−1. These investigations deepen our understanding of mechanisms governing the charge transport scattering in epitaxial LBSO films and pave the way for the development of novel semiconductor thin films for use in electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Rapid, nondestructive characterization techniques for evaluating the degree of crystallinity and phase segregation of organic semiconductor blend thin films are highly desired for in‐line, automated optoelectronic device fabrication facilities. Here, it is demonstrated that reflection polarized optical microscopy (POM), a simple technique capable of imaging local anisotropy of materials, is capable of determining the relative degree of crystallinity and phase segregation of thin films of polymer:fullerene blends. While previous works on POM of organic semiconductors have largely employed the transmission geometry, it is demonstrated that reflection POM provides 3× greater contrast. The optimal configuration is described to maximize contrast from POM images of polymer:fullerene films, which requires Köhler illumination and slightly uncrossed polarizers, with an uncrossing angle of ±3°. It is quantitatively demonstrated that contrast in POM images directly correlates with 1) the degree of polymer crystallinity and 2) the degree of phase segregation between polymer and fullerene domains. The origin of the bright and dark domains in POM is identified as arising from symmetry‐broken liquid crystalline phases (i.e., dark conglomerates), and it is proven that they have no correlation with surface topography. The use of reflection POM as a rapid diagnostic tool for automated device fabrication facilities is discussed. [ABSTRACT FROM AUTHOR]

Historically, knowledge of the molecular packing within the crystal structures of organic semiconductors has been instrumental in understanding their solid‐state electronic properties. Nowadays, crystal structures are thus becoming increasingly important for enabling engineering properties, understanding polymorphism in bulk and in thin films, exploring dynamics and elucidating phase‐transition mechanisms. This review article introduces the most salient and recent results of the field. [ABSTRACT FROM AUTHOR]

Chemical doping is a powerful way to enhance the electrical performance of organic electronics. To avoid perturbing the ordered molecular packing of organic semiconducting hosts, molecular dopants are deposited on the surface of highly crystalline organic semiconductor thin films. However, such surface doping protocols not only limit charge‐transfer efficiency but also cause dopant diffusion problems, which significantly reduce charge carrier mobility and device stability. Here, an innovative anion bulk doping strategy is reported that allows effective doping of organic single‐crystalline films (OSCFs) without disrupting molecular ordering to improve the performance of organic field‐effect transistors (OFETs). This method is mediated by anion dopants and can be pictured as an effective charge transfer of dopants with organic semiconductors in liquid phase. The direct introduction of dopant anions overcomes limitations of partial charge transfer while avoiding interference from dopant aggregation with crystallization. Using this method, the average carrier mobility of the OSCFs is boosted by ≈2.5 times. Significantly, low‐voltage OFETs developed from anion‐doped OSCFs exhibit a near‐ideal subthreshold swing of 59.2 mV dec−1 and unparalleled mobility as high as 19.8 cm2 V−1 s−1 together with excellent stability. The concept of anion doping opens new avenues for improving the electrical performance of organic electronics. [ABSTRACT FROM AUTHOR]

ZnIn2(Se1-x Tex)4 (ZIST) chalcopyrite semiconductor thin films at various contents (x = 0.0, 0.2, and 0.4) are deposited on glass and p type silicon (111) substrate to produce heterojunction solar cell by using the thermal evaporation technique at RT where the thickness of 500 nm with a vacuum of 1×10-5 mbar and a deposited rates of 5.1 nm/s. This study focuses on how differing x content effect on the factors affecting the solar cell characteristics of ZIST thin film and n-ZIST/p-Si heterojunction. X-ray diffraction XRD investigation shows that this structure of ZIST film is polycrystalline and tetragonal, with (112) preferred orientation at 2θ ≈ 27.01. Moreover, atomic force microscopy AFM is studying the external morphology of film, and it is shown that both surface roughness and average diameter increase with increasing x content, hence increasing the crystallite size of thin films. UV/visible spectrophotometer was analyse the optical features of ZIST films, such as absorption coefficient, optical energy, and these films possessed a direct gap that decreased with increase of x content until it reached its lowest value of 1.6 eV at x = 0.4. Hall measurement displayed that the ZIST thin film is n-nature semiconductors with a maximum carrier concentration NH = 6.2 × 1018 (1/cm³), minimum resistivity 0.047 Ω.cm. The illumination current-voltage characteristics revealed that the n-ZIST/p-Si solar cell heterojunction at x = 0.4 content has a maximum efficiency of 2.97%. [ABSTRACT FROM AUTHOR]

In this work, bismuth sulfide (Bi2S3) thin films were deposited by a chemical bath deposition (CBD) technique (called soft chemistry), while titanium dioxide (TiO2) nanoparticles were synthesized by sol–gel and zinc oxide (ZnO) nanoparticles were extracted from alkaline batteries. The resulting nanoparticles were then deposited on the Bi2S3 thin films by spin coating at 1000 rpm for 60 s each layer to create heterojunctions of Bi2S3/ZnO and Bi2S3/TiO2. These materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX). The optical and contact angle analyses were undertaken by UV–Vis spectroscopy and a contact microscopy angle meter, respectively. The calculated band gap values were found to be between 1.9 eV and 2.45 eV. The Bi2S3 presented an orthorhombic structure, the TiO2 nanoparticles presented an anatase structure, and the ZnO nanoparticles presented a wurtzite hexagonal crystal structure. Furthermore, heterogeneous solar photocatalysis was performed using the Bi2S3, Bi2S3/ZnO, and Bi2S3/TiO2 thin film combinations, which resulted in the degradation of Congo red increasing from 8.89% to 30.80% after a 30 min exposure to sunlight. [ABSTRACT FROM AUTHOR]

Among oxygen sensors, types such as polymer-, ceramic-, or carbon-based ones may be distinguished. Particular interest in semiconductor metal oxide (SMO) sensors has recently been observed. This is due to their easy fabrication process, high control over the final product (dopants, posttreatment, etc.), and high concentration of oxygen vacancies, by which they show significant changes in electrical properties when exposed to analyte. In this review, different types of sensors are described and categorized. Importantly, their limitations, challenges and principles of sensing mechanism are also discussed, wherein attention is primarily paid to semiconductor metal oxide (SMO) oxygen sensors. This comprehensive review provides an in-depth analysis of the existing literature on planar SMO oxygen sensors, focusing on various materials, fabrication techniques, and sensing mechanisms. It also critically assesses the challenges and limitations in current research, offering insights into future directions for developing highly efficient and reliable sensors. Currently, most oxygen resistive sensors are a few micrometers thick and operate at high temperatures, which leads to high power consumption. To highlight importance of this topic, a market overview is also presented. [ABSTRACT FROM AUTHOR]

The semiconductor industry is being radically impacted by the placing of greater emphasis on the development of hetero-devices and systems that will act as essential drivers for a wide spectrum of technological applications. The introduction of new materials and their integration with currently used materials are projected to replace integrated circuitry (IC) design and device scaling as the key enablers to the realization of improved device performance and larger density gains. Yet material selection has been constrained by existing fabrication process technology. To date, fabrication processes have dictated material selection by limiting chemical sources or precursors to those that match existing process tools associated with chemically based vapor phase processes and their variants, which in turn limits material compositions in ICs. The processing and integration of new materials compositions and structures will require the introduction of new deposition and etching processes, and manufacturing worthy tool designs and associated protocols that provide new methods for atomic-level control. To this end, a novel manufacturing paradigm is presented comprising a method and system for real-time, closed-loop monitoring and control of synthesis, supply, and consumption of precursors in process intensification techniques including chemical vapor deposition (CVD), atomic layer deposition (ALD), atomic layer etching (ALE), and other IC manufacturing processes. This intelligent automated manufacturing approach is consistent with a central component of the semiconductor industry's recent adoption of Industry 4.0., including vertical integration of IC manufacturing through robotization, artificial intelligence, and cloud computing. Furthermore, the approach eliminates several redundant steps in the synthesis, handling, and disposal of source precursors and their byproducts for CVD, ALD, ALE and other chemically based manufacturing processes, and thus ultimately lowers the manufacturing cost for both conventional and new IC materials. Further, by eliminating the issues associated with precursor thermal, chemical, and pyrophoric instabilities, this new paradigm enables the deposition of a myriad of new thin-film materials and compositions for IC applications that are practically unattainable with existing precursors. Preliminary and planned demonstration examples for the generation and deposition of highly toxic and unstable source precursors are provided. [ABSTRACT FROM AUTHOR]

Over the last two decades, thin film solar cell technology has made notable progress, presenting a competitive alternative to silicon-based solar counterparts. CIGS (CuIn1−xGaxSe2) solar cells, leveraging the tunable optoelectronic properties of the CIGS absorber layer, currently stand out with the highest power conversion efficiency among second-generation solar cells. Various deposition techniques, such as co-evaporation using Cu, In, Ga, and Se elemental sources, the sequential selenization/Sulfurization of sputtered metallic precursors (Cu, In, and Ga), or non-vacuum methods involving the application of specialized inks onto a substrate followed by annealing, can be employed to form CIGS films as light absorbers. While co-evaporation demonstrates exceptional qualities in CIGS thin film production, challenges persist in controlling composition and scaling up the technology. On the other hand, magnetron sputtering techniques show promise in addressing these issues, with ongoing research emphasizing the adoption of simplified and safe manufacturing processes while maintaining high-quality CIGS film production. This review delves into the evolution of CIGS thin films for solar applications, specifically examining their development through physical vapor deposition methods including thermal evaporation and magnetron sputtering. The first section elucidates the structure and characteristics of CIGS-based solar cells, followed by an exploration of the challenges associated with employing solution-based deposition techniques for CIGS fabrication. The second part of this review focuses on the intricacies of controlling the properties of CIGS-absorbing materials deposited via various processes and the subsequent impact on energy conversion performance. This analysis extends to a detailed examination of the deposition processes involved in co-evaporation and magnetron sputtering, encompassing one-stage, two-stage, three-stage, one-step, and two-step methodologies. At the end, this review discusses the prospective next-generation strategies aimed at improving the performance of CIGS-based solar cells. This paper provides an overview of the present research state of CIGS solar cells, with an emphasis on deposition techniques, allowing for a better understanding of the relationship between CIGS thin film properties and solar cell efficiency. Thus, a roadmap for selecting the most appropriate deposition technique is created. By analyzing existing research, this review can assist researchers in this field in identifying gaps, which can then be used as inspiration for future research. [ABSTRACT FROM AUTHOR]

While organic semiconductors hold significant promise for the development of flexible, lightweight electronic devices such as organic thin-film transistors (OTFTs), photodetectors, and gas sensors, their widespread application is often limited by intrinsic challenges. In this article, we first review these challenges in organic electronics, including low charge carrier mobility, susceptibility to environmental degradation, difficulties in achieving uniform film morphology and crystallinity, as well as issues related to poor interface quality, scalability, and reproducibility that further hinder their commercial viability. Next, we focus on reviewing the hybrid system comprising an organic semiconductor and polystyrene (PS) to address these challenges. By examining the interactions of PS as a polymer additive with several benchmark semiconductors such as pentacene, rubrene, 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TES-ADT), and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), we showcase the versatility of PS in enhancing the crystallization, thin film morphology, phase segregation, and electrical performance of organic semiconductor devices. This review aims to highlight the potential of an organic semiconductor/PS hybrid system to overcome key challenges in organic electronics, thereby paving the way for the broader adoption of organic semiconductors in next-generation electronic devices. [ABSTRACT FROM AUTHOR]

The second law of thermodynamics asserts that energy diffuses from hot to cold. The resulting temperature gradients drive the efficiencies and failures in a plethora of technologies. However, as the dimensionalities of materials shrink to the nanoscale regime, proper heat dissipation strategies become more challenging since the mean free paths of phonons become larger than the characteristic length scales. This leads to temperature gradients that are dependent on interfaces and boundaries, which ultimately can lead to severe thermal bottlenecks. Herein, we uncover a phenomenon which we refer to as 'phonon funneling', that allows the control of phonon transport to preferentially direct phonon energy away from geometrically confined interfacial thermal bottlenecks and into localized colder regions. This phenomenon supersedes heat diffusion based on the macroscale temperature gradients, thus introducing a nanoscale regime in which boundary scattering increases the phonon thermal conductivity of thin films, an opposite effect than what is traditionally realized. This work advances the fundamental understanding of phonon transport at the nanoscale and the role of efficient scattering methods for enhancing thermal transport. [ABSTRACT FROM AUTHOR]

A thin film of Fe-CdZnS was fabricated using the Chemical Bath Deposition (CBD) procedure in an aqueous solution, which was then deposited onto a glass substrate. The resulting thin film was subjected to characterization using scanning electron microscopy (SEM), energy-dispersive Xray spectroscopy (EDX), Xray diffraction (XRD) for structural analysis, and UV–Visible spectrophotometry for optical investigations. The energy band gaps of the produced film were established by analyzing the UV–VIS absorption data, both in terms of direct and indirect transitions. According to XRD results, the film shows nano crystallinity with cubical structure. The presence of doping ions was confirmed by EDS results where ratio of Fe ions inside the CdZnS was equal to 0.3 from total elements. The (SEM) graphs of the Fe-CdZnS film exhibit a distinct leafy and fiber-like morphology when observed from a planar perspective. The direct and indirect bandgaps were calculated and found equal to 2.8 and 2.3 eV respectively. [ABSTRACT FROM AUTHOR]

Polycrystalline thin films are widely used for devices and energy-related applications, such as power electronics, solar cells, and thermal management of devices. In many cases, large-scale crystallization during thin-film growth is challenging, so columnar grains are often found in metal and semiconductor thin films. These rough columnar grain boundaries may also have different phonon specularities from that for typically smoother top/bottom film surfaces. A simple analytical model to separately treat these boundaries and interfaces for phonon scattering is currently unavailable, although the in-plane thermal transport is critical to heat spreading within thin-film devices. In this paper, we extend the effective medium formulation from three-dimensional polycrystalline bulk materials to columnar-grained thin films. The model predictions agree well with those given by frequency-dependent phonon Monte Carlo simulations, considering varied phonon specularity at top/bottom film surfaces and grain-boundary phonon transmissivity. The analytical model is further used to analyze the existing data on polycrystalline ZnO thin films with columnar grains. [ABSTRACT FROM AUTHOR]

This study investigates the effects of applied tensile and compressive stresses on the evolution of defects in He-irradiated silicon carbide (SiC) materials. By combining experimental studies with density-functional theory (DFT) simulations, we systematically analyzed the microstructural changes and defect formation mechanisms in SiC under stress. The research focused on He irradiation of SiC at 750 °C, with a fluence of 1 × 101⁷ He/cm2. The results revealed that the strain resulting from radiation damage depends on the applied stress during irradiation. Moreover, the formation of platelets is influenced by this applied stress: tensile stress promotes platelet growth, while compressive stress inhibits it. DFT simulations further supported these experimental findings by showing that under tensile strain, both carbon vacancies (Cv) and He atoms exhibit low energy barriers for migration. This phenomenon facilitates platelet growth, aligning well with the observations made in the experiments. However, when considering applications like semiconductor thin film transfer, such as the Smart-cut technique, He implantation under tensile stress can actually be advantageous. This approach enables the use of lower He fluence, which in turn reduces the overall cost of the operation. By strategically leveraging the effects of tensile stress on He implantation, it becomes possible to optimize processes like Smart-cut for more efficient and cost-effective thin film transfer in semiconductor manufacturing. [ABSTRACT FROM AUTHOR]

The present work comprises a practical tutorial on the topic of correlative microscopy and its application to optoelectronic semiconductor materials and devices. For the assessment of microscopic structure–property relationships, correlative electron microscopy, combined also with scanning-probe and light microscopy, exhibits a collection of indispensable tools to analyze various material and device properties. This Tutorial describes not only the various microscopy methods but also the specimen preparation in detail. Moreover, it is shown that electron microscopy can serve to monitor phase segregation processes on various length scales in semiconductor nanoparticles and thin films. Algorithms used to extract phase information from high-resolution transmission electron micrographs are explained. [ABSTRACT FROM AUTHOR]

Ternary semiconductors such as InGaN thin films, quantum wells, and superlattices commonly exhibit alloy fluctuations that become increasingly pronounced with higher In-content. The thickness fluctuations of quantum wells and their thin cap-layers further introduce nanoscale inhomogeneities that alter the potential landscape. In this work, we present a combined theoretical and experimental study of InGaN single quantum wells with thin GaN cap-layers to unravel the influence of cap-layer thickness, compositional inhomogeneity, and thickness fluctuations on their electronic and optical properties. A pronounced spectral shift of quantum well emission for thin cap-layers between 1 and 10 nm is observed by micro-photoluminescence spectroscopy. The origin of this shift is explained by calculations of electronic band profiles and probability density overlap of carriers in the quantum well. The impact of alloy fluctuations and homogeneity for different cap-layer thicknesses is studied on both the microscale and nanoscale using UV micro-Raman scattering and tip-enhanced Raman spectroscopy (TERS). On the microscale, the alloy composition as determined by micro-Raman mapping appears very homogeneous except for the thinnest 1 nm cap-layer where small fluctuations are visible. On the nanoscale, TERS reveals local fluctuations on a 20–30 nm length scale. The influence of the cap-layer thickness on the TERS spectra is discussed regarding both the nanoscale homogeneity and the depth resolution of the near-field Raman scattering technique. Our results demonstrate the capabilities of TERS to resolve nanoscale thickness fluctuations and compositional inhomogeneities in ultra-thin semiconductor layers, even when they are buried by thin cap-layers with thicknesses below 10 nm. [ABSTRACT FROM AUTHOR]

The application of machine learning in materials science has yielded several benefits, including the prediction of physical properties and the improvement of experimental efficiency. However, with complex models, such as convolutional neural networks (CNN), learning has become a black box, from which no universal physical knowledge can be obtained. In this study, a highly accurate prediction of the electrical properties of polycrystalline semiconductor thin films is achieved by learning multichannel CNN models from electron backscattering diffraction (EBSD) data, that is band contrasts, grain boundaries, and inverse pole figures. In addition, it examines how the CNN model learned the correlation between the crystallinity, grain boundaries, crystallographic orientation, and carrier mobility by polarizing certain EBSD data and checking the predicted changes in carrier mobility. Physical parameters affecting carrier mobility can be extracted, which is challenging via human image recognition. The methods proposed in this study will not only enable the prediction of electrical properties from EBSD data for all materials but also will contribute to the discovery of complex physical phenomena beyond the limits of human analysis. [ABSTRACT FROM AUTHOR]

Flexible thermoelectric generators are leading candidates for next‐generation energy‐harvesting devices. Although SiGe, an environmentally‐friendly semiconductor, is the most reliable and widely tested thermoelectric material, it is difficult to form a SiGe layer with high thermoelectric performance at temperatures lower than the heat‐proof temperature of flexible plastic films. In this article, the synthesis of SiGe thermoelectric thin films via the metal‐induced layer exchange phenomenon is reviewed, from its mechanism to device performance. The selection of metal species allows low‐temperature formation (≤500 °C) of p‐ and n‐type SiGe on insulating substrates. Currently, the maximum power factors near room temperature are 850 µW m−1 K−2 for p‐type Si0.4Ge0.6 and 1000 µW m−1 K−2 for n‐type Si0.85Ge0.15. These values are the highest among those of Group IV semiconductor thin films formed at low temperatures. The flexible thermoelectric generator consisting of these p‐ and n‐type SiGe exhibits cross‐sectional and planar power densities of ≈3.0 mW cm−2 and 0.50 µW cm−2, respectively, at a temperature difference of 30 K. Finally, the future challenges of layer exchange for improving the performance of flexible thermoelectric generators based on Group IV semiconductors are discussed. [ABSTRACT FROM AUTHOR]

All-inorganic perovskite semiconductors have received significant interest for their potential stability over heat and humidity. However, the typical CsPbI3 displays phase instability despite its desirable bandgap of ~1.73 eV. Herein, we studied the mixed halide perovskite CsPbI2Br by varying the silver doping concentration. For this purpose, we examined its bandgap tunability as a function of the silver doping by using density functional theory. Then, we studied the effect of silver on the structural and optical properties of CsPbI2Br. Resultantly, we found that 'silver doping' allowed for partial bandgap tunability from 1.91 eV to 2.05 eV, increasing the photoluminescence (PL) lifetime from 0.990 ns to 1.187 ns, and, finally, contributing to the structural stability when examining the aging effect via X-ray diffraction. Then, through the analysis of the intermolecular interactions based on the solubility parameter, we explain the solvent engineering process in relation to the solvent trapping phenomena in CsPbI2Br thin films. However, silver doping may induce a defect morphology (e.g., a pinhole) during the formation of the thin films. [ABSTRACT FROM AUTHOR]

In the recent years, the using of fossil energy source-based fuels are delivering to the predetermined nature, health and environmental exposure, there is a universal necessitate prepared to well improvement and consumption of renewable energy source and apparatus. With the rapid growth of human life, energy is more essential. The explosive growth of population and energy consumption demands are the exclusive issue of the present world. In response to the energy demands, the growth of highly efficient energy conversion and storage devices. With increasing energy demands and environmental pollution, there is a requirement of the world to great some novel conducting materials consist of Perovskite solar cells (PSCs) which is delivered that excellent photoconversion efficiencies (PCE) compare with the other silicon supported photovoltaics, and also semiconducting materials for the conversion of substitute energy sources and preparation of high high-performance semiconductor devices. Semiconducting thin films play an indispensable role in fashionable science and electronic technology. Among them, the II–VI compound semiconductor thin films are an important class of materials, and they are generally comprehensive wide-band gap materials. In addition, the un-doped and rare-earth metal ions doped zinc selenide (ZnSe) thin films are currently the most demanding and technologically important materials, which have the potential for optoelectronic devices (solar cells, photoelectrochemical cell and light emitting diodes) and are active throughout the entire visible spectrum extending into the infrared wavelengths. Various techniques for depositing thin coatings on these substances are utilized to a greater extent. In this review, the most recent advanced techniques in the application of semiconducting materials-based thin films were produced in various energy-generated fields, particularly solar cells, with a major focus on a review of recent progress in the development of various types of ZnSe thin film-based material for high-performance semiconducting thin film material for solar cell application. Lastly, the advantages and material challenges of semiconductor-based thin films for future sanitary energy device process are described. [ABSTRACT FROM AUTHOR]

This study presents a novel inverse identification approach to determine the elastoplastic parameters of a 2 µm thick GaN semiconductor thin film deposited on a sapphire substrate. This approach combines instrumented nanoindentation with finite element (FE) simulations and an artificial neural network (ANN) model. Experimental load–depth curves were obtained using a Berkovich indenter. To generate a comprehensive database for the inverse analysis, FE models were constructed to simulate load–depth responses across a wide range of GaN thin film properties. The accuracy of both 2D and 3D simulations was compared to select the optimal model for database generation. The Box–Behnken design-based data sampling method was used to define the number of simulations and input variables for the FE models. The ANN technique was then employed to establish the complex mapping between the simulated load–depth curves (input) and the corresponding stress–strain curve (output). The generated database was used to train and test the ANN model. Then, the learned ANN model was used to achieve high accuracy in identifying the stress–strain curve of the GaN thin film from the experimental load–depth data. This work demonstrates the successful application of an inverse analysis framework, combining experimental nanoindentation tests, FE modeling, and an ANN model, for the characterization of the elastoplastic behavior of GaN thin films. [ABSTRACT FROM AUTHOR]

Thin film photovoltaics are a key part of both current and future solar energy technologies and have been heavily reliant on metal chalcogenide semiconductors as the absorber layer. Developing solution processing methods to deposit metal chalcogenide semiconductors offers the promise of low-cost and high-throughput fabrication of thin film photovoltaics. In this review article we lay out the key chemistry and engineering that has propelled research on solution processing of metal chalcogenide semiconductors, focusing on Cu(In,Ga)(S,Se)2 as a model system. Further, we expand on how this methodology can be extended to other emerging metal chalcogenide materials like Cu2ZnSn(S,Se)4, copper pnictogen sulfides, and chalcogenide perovskites. Finally, we discuss future opportunities in this field of research, both considering fundamental and applied perspectives. Overall, this review can serve as a roadmap to researchers tackling challenges in solution processed metal chalcogenides to better accelerate progress on thin films photovoltaics and other semiconductor applications. [ABSTRACT FROM AUTHOR]

This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technology to deposit the In-doped SiC thin films with the thickness of approximately 189.8 nm. The first breakthrough of this research was the successful deposition of using e-beam technology. The second breakthrough involved utilizing various tools to analyze the physical and electrical properties of In-doped SiC thin films. Hall effect measurement was used to measure the resistivity, mobility, and carrier concentration and confirm its n-type semiconductor nature. The uniform dispersion of In ions in SiC was as confirmed by electron microscopy energy-dispersive spectroscopy and secondary ion mass spectrometry analyses. The Tauc Plot method was employed to determine the Eg values of pure SiC and In-doped SiC thin films. Semiconductor parameter analyzer was used to measure the conductivity and the I-V characteristics of devices in In-doped SiC thin films. Furthermore, the third finding demonstrated that In2O3-doped SiC thin films exhibited remarkable current density. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a significant relationship between conductivity and oxygen vacancy concentration. Lastly, depositing these In-doped SiC thin films onto p-type silicon substrates etched with buffered oxide etchant resulted in the formation of heterojunction p-n junction. This junction exhibited the rectifying characteristics of a diode, with sample current values in the vicinity of 102 mA, breakdown voltage at approximately −5.23 V, and open-circuit voltage around 1.56 V. This underscores the potential of In-doped SiC thin films for various semiconductor devices. [ABSTRACT FROM AUTHOR]

Solar cells comprising earth‐abundant and non‐toxic elements with applicable bandgaps and high absorption coefficients have attracted considerable interest over the past several decades and are important devices for addressing the future demand for clean and renewable energy. Antimony sulfide (Sb2S3) crystal material effectively meets these requirements owing to its suitable bandgap, high absorption coefficient, high electron and hole mobilities, earth abundance, and excellent stability. Solution‐processed Sb2S3 films are essential to facilitate the fabrication of low‐cost, large‐scale, and high‐efficiency photovoltaic devices, but suffer from several shortcomings of large intrinsic defects, high interfacial barrier, and atomic mismatch, uncontrollable film thickness, and crystal orientation. In this review, a systematic overview of the fundamental properties of solution‐processed Sb2S3 materials is presented, and then interface engineering, defect passivation and control strategies, crystal orientation and modulation methods, device structure, and the performance of Sb2S3 solar cells are focused, highlighting the primary advancements and major challenges based on this technology. Finally, several creative perspectives and constructive innovation strategies for future research on Sb2S3 photovoltaic devices are provided, indicating a roadmap for the practical application of other inorganic semiconductor heterojunction thin film solar cells. [ABSTRACT FROM AUTHOR]

Coatings with tunable multifunctional features are important for several technological applications. Ti-based materials have been used in diverse applications ranging from metallic diodes in electronic devices up to medical implants. This work uses ab initio calculations to achieve a more fundamental understanding of the structural and electronic properties of β-TiNb and its passive TiO2 film surfaces upon Ag addition, investigating the alterations in the electronic band gap and the stability of the antibacterial coating. We find that Ag's 4d electrons introduce localized electron states, characterized by bonding features with the favoured Ti first neighbour atoms, approximately −5 eV below the fermi level in both β-TiNb bulk and surface. Ag's binding energy on β-TiNb(110) depends on the local environment (the lattice site and the type of bonded surface atoms) ranging from −2.70 eV up to −4.21 eV for the adatom on a four-fold Ti site, offering a variety of options for the design of a stable coating or for Ag ion release. In Ti–O terminated anatase and rutile (001) surfaces, surface states are introduced altering the TiO2 band gap. Silver is bonded more strongly, and therefore creates a more stable antibacterial coat on rutile than on anatase. In addition, the Ag coating exhibits enhanced 4d electron states at the highest occupied state on anatase (001),which are extended from −5 eV up to the Fermi level on rutile (001), which might be altered depending on the coat structural features, thus creating systems with tunable electronic band gap that can be used for the design of thin film semiconductors. [ABSTRACT FROM AUTHOR]

Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge1−xSnx with 10% Sn on a graded profile for 30 min shows uniform composition and a strong peak on the reciprocal space map (RSM). On the other hand, the partially relaxed growth of the alloy on RSM was established. [ABSTRACT FROM AUTHOR]

We report the fabrication of metal alloy Au–Pd nanoparticles on semiconductor thin film substrates (ZnO) by laser-induced dewetting. Employing a UV excimer laser, a single pulse was directed onto a three-layer film stack on a glass substrate: glass/ZnO/Au/Pd and glass/ZnO/Pd/Au. We simulated the temperature attained by the thin films enabling the prediction of energy thresholds required for melting the metal films but avoiding modifying the ZnO film. A specific range is reported of the pulse energy conducive to nanoparticle formation and the energy threshold required to modify the ZnO film beneath them. Depending on the pulse energy applied, the mean diameter of the nanoparticles varied from approximately 150 to around 70 nm. Notably, higher fluences resulted in smaller particles but also induced surface cracks in the ZnO film. Additionally, we observed a reduction in nanoparticle size with increased Pd content. Our results show that laser-induced dewetting can produce bimetallic alloy nanoparticles and, at the same time, ensure the preservation of the optical properties of the ZnO film. This approach opens avenues for tailoring material characteristics and expanding the range of applications of metal nanoparticles on semiconductor-based systems. [ABSTRACT FROM AUTHOR]

Epitaxial growth of a wide bandgap semiconductor β-Ga2O3 thin film with high crystal quality plays a decisive role in constructing optical and electronic devices. However, except for the native substrate, the scarcity of appropriate non-native substrates or the poor crystallization of the deposit in thin film growth severely limits the fabrication and applicability of the final heterostructures and devices. Here, by taking the consistent symmetry and closely matched atomic spacing between β-Ga2O3 (−201) and the cubic perovskite (111)-oriented plane of SrTiO3, we realize the epitaxial growth of single crystal β-Ga2O3 (−201) thin films on the SrTiO3 (111) substrate by the pulsed laser deposition method, as confirmed by wide-range reciprocal-space mapping and high-resolution scanning transmission electron microscopy. The fabricated β-Ga2O3 (−201) photodetector device on the SrTiO3 (111) substrate exhibits excellent ultraviolet optical detection performance with large on/off switching ratios and a fast response speed. Moreover, the β-Ga2O3/SrTiO3 (111) heterojunction shows type-II heterostructure characteristics for energy band alignment, which displays superior ability for electron–hole pairs separation with large conduction and small valance band offsets of 1.68 and 0.09 eV, respectively. The results offer us a new way to obtain high-quality β-Ga2O3 (−201) thin film heterostructures on cubic SrTiO3 (111) substrates and fabricate β-Ga2O3-based optical and electronic devices. [ABSTRACT FROM AUTHOR]

A thin film of 7-oxo-thiazolopyrimidine-3,8-dicarbonitrile derivative [7-ThPyDi]TF was prepared using a spin coating technique. The surface morphology and molecular structure are studied using various techniques such as XRD, FTIR, and scanning electron microscope (SEM). Moreover, the quantum chemical calculations were carried out through time-dependent density functional theory (TD-DFT) to investigate some reactivity descriptors such as softness and electronegativity. Also, Au/[7-ThPyDi]TF/p-Si/Al heterojunction diodes were fabricated. It was revealed that the energy bandgap value of [7-ThPyDi] as an organic thin film is 3.58 eV for direct transitions and 3.94 eV for indirect transitions, respectively, and this value falls within the semiconductor material range. The atomic force microscope demonstrated that the surface roughness of the thin film is approximately 32.2 nm. Because of its high refractive index, this material has the potential application as an antireflection coating for solar cells and as lenses with a wide focal range. We investigated a blue luminescent thiazolopyrimidine compound; the maximum emission in the more aggregated state (higher solution concentration) exhibits a notable blue shift compared to the more diluted solution. This uncommon phenomenon has been understood by structural analyses using density functional theory. The chemical structure of the molecule [planar conjugated cores and strong polar groups (–CO and –CN)] enables it to interact with both itself and the polar solvent. The intermolecular interactions result in the bending of the conjugated plane. As a result, the blue shift happens upon aggregation when the conjugated effect becomes weaker. The studied molecule gave different emission colors (blue, yellow, and reddish green) depending on the molecular packing. [ABSTRACT FROM AUTHOR]

Semiconductor films are crucial in photocatalysis applications, yet their controlled production remains challenging. Previous studies have mainly focused on deposition processes, heating rates, and doping of semiconductor oxides. In this paper, we introduce a novel method for fabricating tenorite (CuO) semiconductor films with varying precursor concentrations (0.01, 0.02, 0.04, 0.06, and 0.1 g/ml) using a dip-coating technique. We explore the impact of contact angles, 3D surface topography, and film thickness on photoactivation properties, areas with limited previous research focus. The results demonstrate that higher-concentration tenorite films (0.1 g/ml) exhibit rougher surfaces (77.3 nm), increased hydrophobicity (65.61°), improved light-harvesting ability, enhanced charge separation, and higher active oxygen output. The crystal sizes were within the range of 7.3–44.1 nm. Wettability tests show a 21.47% improvement in the 0.1 g/ml film surface under indirect sunlight compared to darkness. Transmittance rates in the 600 nm range were from 0.02 to 90.94%. The direct optical band gaps were 1.21–2.74 eV, while the indirect band gaps remained unaffected (0.9–1.11 eV). Surface morphology analysis reveals an increased presence of grains with higher concentrations. Regarding photocatalysis's impact on film morphology and copper content, SEM images reveal minimal changes in film structure, while copper content remains stable with slight variations. This suggests strong adhesion of tenorite to the film after photocatalysis. Tenorite thin films display exceptional photocatalytic efficiency, making them suitable for practical applications. [ABSTRACT FROM AUTHOR]

The organic–inorganic hybrid composite materials, polybithiophene and Cadmium Sulphide have been successfully synthesized by electrochemical method onto the ITO substrates. The obtained hybrids were characterized by techniques like Scanning electron microscope (SEM), UV–Vis photo spectrometer and X-ray diffraction (XRD) to examine the phase purity and crystal structure. Electrical characteristics of the hybrid composite have been investigated with photoelectrochemical (PEC) and Mott–Schottky (MS) analysis in an electrolyte solution. Mott-schottky and photoelectrochemical studies indicate that the conducting polymer polybithiophene. (PBTh) as p-type semiconductor and cadmium bands (CdS) thin films as n-type semiconductor. As results, X-ray diffraction patterns show that the polybithiophene film is amorphous whereas the cadmium bands is hexagonal wurtzite structure. The optical band gap energies of p-PBTh and n-CdS-PBTh film are 2 and 1.78 eV, respectively. The Scanning electron microscope also revealed that cadmium bands plays an important role to strengthen the structural, morphological and optical properties of deposited thin films. The current–voltage (I–V) confirms the formation of junction in p-PBTh/n- CdS-PBTh arrays and best results have been obtained, the short-circuit current (Isc = 10.38 (μA cm−2), the open circuit voltage (Vco = 1.96 V), the fill factor (FF = 24%) and conversion efficiency (ɳ = 0.54%), the various results obtained are attractive and suitable for photovoltaic applications. [ABSTRACT FROM AUTHOR]

Studying the properties of thermoelectric materials needs substantial effort owing to the interplay of the trade-off relationships among the influential parameters. In view of this issue, artificial intelligence has recently been used to investigate and optimize thermoelectric materials. Here, we used Bayesian optimization to improve the thermoelectric properties of multicomponent III–V materials; this domain warrants comprehensive investigation due to the need to simultaneously control multiple parameters. We designated the figure of merit ZT as the objective function to improve and search for a five-dimensional space comprising the composition of InGaAsSb thin films, dopant concentration, and film-deposition temperatures. After six Bayesian optimization cycles, ZT exhibited an approximately threefold improvement compared to its values obtained in the random initial experimental trials. Additional analysis employing Gaussian process regression elucidated that a high In composition and low substrate temperature were particularly effective at increasing ZT. The optimal substrate temperature (205 °C) demonstrated the potential for depositing InGaAsSb thermoelectric thin films onto plastic substrates. These findings not only promote the development of thermoelectric devices based on III–V semiconductors but also highlight the effectiveness of using Bayesian optimization for multicomponent materials. Bayesian optimization improved the thermoelectric properties of InGaAsSb thin films; this domain warrants comprehensive investigation due to the need to simultaneously control multiple parameters, such as, the composition, dopant concentration, and film-deposition temperatures. After six optimization cycles, the dimensionless figure of merit exhibited an approximately threefold improvement compared to its values obtained in the random initial experimental trials. These findings not only promote the development of thermoelectric devices based on III–V semiconductors but also highlight the effectiveness of using Bayesian optimization for multicomponent materials. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) semiconductor thin films can potentially be applied in photoelectrochemical (PEC) water splitting owing to the layered structure and strong interaction with light. Herein, a vertically aligned 2D SnS2 nanoflake photoanodes were synthesized by sulfurizing chemically deposited cubic SnS films on ITO-coated glass substrates at 350 ∘ C for different durations (10 to 60 min). Structural analysis revealed the formation of phase-pure crystalline SnS2 films with a hexagonal structure. XPS analysis revealed the valence state of Sn and S to be + 4 , and - 2 , respectively. Morphological studies revealed the formation of 2D nanoflakes that are aligned vertically on the ITO substrate. Upon increasing the sulfurization time, the size of the nanoflakes decreases, while the density of nanoflakes on the substrate increases. The direct optical bandgap of SnS2 photoanodes increased from 2.08 to 2.42 eV with increasing sulfurization duration. PEC measurements revealed an increase in the PEC activity with increasing sulfurization time. The SnS2 photoanode synthesized for 60 min exhibits a maximal current density of 5.1 mA/cm2 and a stable photocurrent under 630 s of light illumination. This study illustrates a simple and inexpensive method for the fabrication of an efficient and stable SnS2 nanoflake photoanodes. [ABSTRACT FROM AUTHOR]

The Cu2ZnSnS4 (CZTS) thin film is a newly emerging semiconductor material in the thin film solar cell industry. The CZTS is composed of economical, common earth-abundant elements. It has advantageous properties like a high absorption coefficient and the best band gap. Here we have applied a low-cost chemical bath deposition technique for the synthesis of CZTS at low temperature, acidic medium and its characterization. The films were characterized by different techniques like X-ray diffraction, Raman, SEM, Optical absorbance, electrical conductivity and PEC study. The X-ray diffraction and Raman scattering techniques were utilized for structural study. The XRD reveals the kasterite phase and nanocrystalline nature of CZTS thin films. These results and their purity were confirmed further by advanced Raman spectroscopy with a 335 cm-1 major peak. The crystallite size was found to be 50.19 nm. The optical absorbance study carried out by use of UV-visible spectroscopy analyses its band gap near about 1.5 eV and its direct type of absorption. The electrical conductivity technique gives a p-type of conductivity. The scanning electron microscopy (SEM) study finds its rock-like unique morphology. The EDS technique confirms its elemental composition and its fair stoichiometry. The analysis of PEC data revealed power conversion efficiency-PCE to 0.90%. [ABSTRACT FROM AUTHOR]

This comprehensive review explores recent advancements in creating hybrid semiconductor perovskite thin films, driving progress in photovoltaic technology. It covers aspects like material design, fabrication techniques, and device structures, all aimed at addressing challenges and guiding the way to efficient and sustainable solar energy conversion. The review reveals the intricate interplay between energy conversion, device processing, and stability enhancement, providing context to the evolving field of photovoltaics. While hybrid metal halide perovskites exhibit innovation, challenges in stability and reproducibility persist. A collective push for progress drives scientific efforts, involving the optimization of absorber layers, innovative deposition methods, and strategic interlayer integration. The synthesis of research and insights traces the evolution of perovskite technology, from the early days of methylammonium lead iodide (MAPbI3) to a symphony of innovation. With determination and creativity, hybrid semiconductor perovskite thin films emerge as key players in shaping the future of solar energy conversion. [ABSTRACT FROM AUTHOR]

The critical step of a dye-sensitized photoelectrochemical cell (DSPEC) is water oxidation. The photoanodes suffer rapid surface carrier recombination due to slow water oxidation kinetics and this results in low solar conversion efficiency and poor stability. Here, we design a novel sensitization–oxidation photo-anode, where the [Ru(4,4′-PO3H2-bpy)(bpy)2]2+ (RuP2+, bpy = 2,2′-bipyridine) chromophore and [Ru(bda)(pic)2] (pic = picoline, bda = 2,2′-bipyridine-6,6′-dicarboxylate) water oxidation catalyst (WOC) are immobilized separately on the surface of a mesoporous semiconductor thin film. The electrode creates a mobile and strong Br3− oxidant generated by the dye-sensitized electrode, which initiates water oxidation at a remote catalytic site. Under 100 mW cm−2 illumination in pH 4.65 in 0.1 M acetate buffer solution, the photoanode could perform a stable photoelectrochemical water oxidation for 6 hours with a photocurrent density of around 0.25 mA cm−2. This dual electrode could open a new door by utilizing an electron transfer mediator to design highly stable photoelectrochemical cells. [ABSTRACT FROM AUTHOR]

Avertical oxide semiconductor thin film transistor (VTFT) with channel lengthof 0.4 μm wasdeveloped in our work. This VTFT has a small footprint, which isconducive to achieving higher resolutiom. In this work, we produced a VTFT by usinga hardmask etching process and designed different vertical structures, such asslope, hole, etc. The device achieved an on‐state current of 20.6 μA (normalized with width) and an off‐state current below 1 pA. [ABSTRACT FROM AUTHOR]

This article discusses the field of nanophotonics and its focus on controlling non-equilibrium processes by manipulating the structure of materials at the nanometer scale. The article highlights two main approaches to achieving this control: confining carriers in semiconductor nanostructures and patterning structures that confine light locally. The article also mentions the concept of strong light-matter coupling, where energy is coherently exchanged between emitters and confined photons, forming hybrid states known as polaritons. The article further explores various phenomena and applications in nanophotonics, such as superfluorescence, scintillation, and resonant optical nonlinearities. It concludes by emphasizing the need for further research and understanding in this field. [Extracted from the article]

We study temperature effects in piezoelectric semiconductor thin films through pyroelectric and thermoelastic as well as piezoelectric couplings. Two-dimensional equations based on the macroscopic theory of piezoelectric semiconductors for extensional deformations of the films are used. A p-type ZnO film with an in-plane c-axis is analyzed. It is shown through a linear and theoretical analysis that a local temperature change produces a pair of a potential barrier and a well in the film. A nonlinear numerical analysis is then performed when a voltage is also applied, showing that the potential barrier blocks the in-plane motion of the holes and thus affects the current density distribution. The effects of various physical and geometric parameters are examined. The results obtained provide the theoretical foundation for thermally manipulating currents in piezoelectric semiconductor films for piezotronic applications. [ABSTRACT FROM AUTHOR]

Routes to semi-stable phases of Ga 2 O 3 are the subject of extended discussions based on the review of growth methods, growth conditions, and precursors in works that report semi-stable phases other than the thermally stable β phase. The focus here is on mist chemical vapor deposition because it has produced single-phase Ga 2 O 3 of α , γ , and ε (or κ) in terms of the substrate materials, and features of this growth method for phase control are emphasized. Recent reports of phase control by other growth technology give a deeper understanding of how to determine and control the phases, increasing the opportunities to fully utilize the novel and unique properties of Ga 2 O 3. [ABSTRACT FROM AUTHOR]

Recent advances in 3D/2D heterostructures have opened up tremendous opportunities in building highly flexible and durable optoelectronic devices. However, the inherit lack of interfacial bonding and low surface energy of van der Waals surfaces limit the nucleation and growth of 3D materials. Enhancing wettability by providing a porous buffer is effective in growing compound semiconductors on graphene while van der Waals epitaxy of Ge remains challenging. Here, the nucleation of Ge has been significantly improved from an islanded mode to granular modes by using a TiN/AlN multilayered buffer prior to Ge/graphene integration. Highly textured Ge growth with dominating (111), (220), and (311) peaks are identified by x-ray diffraction. The microstructure of the buffer TiN/AlN demonstrates a polycrystalline quality with clean interfaces between each interlayer and the substrate. Kelvin probe force microscopy measurements along the lateral TiN/AlN interface identify a potential drop corresponding to the AlN phase. This contact potential difference between TiN and AlN is the key in generating the out-of-plane dipole moment that modifies the surface energy of the monolayer graphene, resulting in enhanced wettability of the Ge adatoms nucleated on top. Surface dipole induced nucleation of 3D semiconductor thin films on 2D materials via the proper design of buffer layer is fundamentally important to enhance the 3D/2D growth toward flexible optoelectronic applications. [ABSTRACT FROM AUTHOR]