188 results on '"Silicon -- Spectra"'
Search Results
2. Intrinsic gettering based on rapid thermal annealing in germanium-doped Czochralski silicon
3. Electron spin-resonance studies of conduction electrons in phosphorus-doped silicon nanocrystals
4. Spatially resolved, laser-induced breakdown spectroscopy, development, and application for the analysis of Al and Si in nickel-based alloys
5. Si vacancies in the 10-[Angstrom] phase
6. Electronic spectrum of silicon monosulfide: configuration interaction study
7. Intracluster reactions of (CS(sub)2)(sub)n(sup)- and (OCS)(sub)n(sup)- induced by surface impact
8. Paramagnetic defects in ultrafine silicon particles
9. X-ray diffraction investigation of n-type porous silicon
10. Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: evidence of ion beam induced annealing
11. Temperature dependence analysis of the thermo-optic effect in silicon by single and double oscillator models
12. Nonlinear optical properties of threefold coordinated paramagnetic Si centers: an ab initio time-dependent Hartree-Fock study on SiH3 radical
13. Spectral response of porous silicon based photovoltaic devices
14. Modeling and characterization of a strained Si/Si1-xGex transistor with delta-doped layers
15. Visible photoluminescence in hydrogenated amorphous silicon grown in microwave plasma from SiH4 strongly diluted with He
16. He-implantation induced defects in Si studied by slow positron annihilation spectroscopy
17. Photolysis of Disilane at 193 nm
18. Positron annihilation investigation of porous silicon heat treated to 1000 deg C
19. Optical functions of silicon at high temperatures
20. Transition metal complex-doped hydroxyapatite layers on porous silicon
21. Photoluminescence enhancement of porous silicon by organic cyano compounds
22. Analysis of photoluminescence from porous silicon: Particle size distribution
23. Temperature effect on the roughness of the formation interface of p-type porous silicon
24. Mechanism of iron gettering in MeV Si ion implanted epitaxial silicon
25. Formation of self-assembled octadecylsiloxane monolayers on mica and silicon surfaces studied by atomic force microscopy and infrared spectroscopy
26. Determination of effective energy loss functions and x-ray photoelectron spectroscopy source functions for Si 2p photoelectrons from clean Si(111), oxygen-adsorbed Si(111) and SiO2 surfaces
27. Annealing behaviors of photoluminescence from SiO(sub x):H
28. Quantitative analysis of the concentration of interstitial O(sub2) molecules in SiO(sub2) glass using luminescence and Raman spectrometry
29. Thin layers and multilayers of porous silicon: X-ray diffraction investigation
30. Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters
31. Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multiple-sample, multi-wavelength, multi-angle investigation
32. Accurate heats of formation for SiFn and SiFn+, for n = 1-4
33. Amphoteric native defect reactions in Si-doped GaAs
34. One-dimensional antireflection gratings in (100) silicon: a numerical study
35. Transformation, green to orange-red, of a porous silicon photoluminescent surface in solution
36. Reflectance measurements on clean surfaces for the determination of optical constants of silicon in the extreme ultraviolet-soft-x-ray region
37. Spectral diffusion within the porous silicon emission wavelength range on the nanosecond to millisecond time scale
38. Observation of competing etches in chemically etched porous silicon
39. A micro-Raman investigation of the SCS-6 SiC fiber
40. The infrared vibrational absorption spectrum of the Si-X defect present in heavily Si doped GaAs
41. Emissivity of liquid silicon in visible and infrared regions
42. Origin of infrared bands in neutron-irradiated silicon
43. Passivation of light-emitting porous silicon by rapid thermal treatment in NH3
44. The temperature dependence of the absorption coefficient of porous silicon
45. Subgap excitation of defect band photoluminescence in phosphorus doped hydrogenated amorphous silicon
46. Correlation between the radiation-induced intrinsic 4.8 eV optical absorption and 1.9 eV photoluminescence bands in glassy SiO2
47. Depth inhomogeneity of porous silicon layers
48. Carrier localization in porous silicon investigated by time-resolved luminescence analysis
49. Carrier dynamics in oxidized porous silicon
50. Two-dimensional intensity distribution of photoluminescence from porous silicon
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.