Author: "Stephanie Rennesson" - Searchworks@Jio Institute Digital Library Search Results

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33 results on '"Stephanie Rennesson"'

1. How a ridge polariton laser is different from a standard ridge laser

Author: Thierry Guillet, Stephanie Rennesson, Laetitia Doyennette, Edmond Cambril, Blandine Alloing, Jesús Zúñiga-Pérez, M. Gromovyi, Dmitry Solnyshkov, Christelle Brimont, Pierre Disseix, Guillaume Malpuech, Fabrice Semond, François Réveret, Sophie Bouchoule, Joël Leymarie, F. Médard, H. Souissi, G. Kreyder, and T. Gueye
Subjects: business.industry, Physics::Optics, Laser, Population inversion, Semiconductor laser theory, law.invention, Optics, law, Ridge (meteorology), Polariton, Physics::Atomic Physics, Stimulated emission, Absorption (electromagnetic radiation), business, Lasing threshold
Abstract: The physics of gain in interband semiconductor lasers is mostly discussed in terms of population inversion for electrons and holes and the associated Bernard-Durrafourg condition. Due to the reciprocity between the processes of absorption and stimulated emission, one consequence is that lasing action can only be reached in standard ridge lasers if the pumped section of a laser is longer than the unpumped (absorptive) section. Here we present how a polariton laser, in a ridge waveguide laser geometry very similar to that of standard ridge lasers, operates on a fundamentally different lasing scheme. Alike multi-section lasers, this laser can be optically pumped over an adjustable length, and we show that lasing action is observed for a pumped length equal to only 15% of the cavity. Based on this striking feature, the comparison between polariton gain and population inversion will be didactically discussed.
Published: 2021
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2. Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy

Author: Jesús Zúñiga-Pérez, Fabrice Semond, Stephanie Rennesson, M. Nemoz, Gilles Patriarche, Mathieu Leroux, Sophie Bouchoule, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Subjects: A1. High resolution X-ray diffraction, Materials science, Silicon, B2. Semiconducting III-V materials, Annealing (metallurgy), Superlattice, A3. Molecular beam epitaxy, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Nitride, 01 natural sciences, B1. Nitrides, 0103 physical sciences, Scanning transmission electron microscopy, General Materials Science, Electrical and Electronic Engineering, Diffusion (business), 010302 applied physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Dark field microscopy, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], A1. Diffusion, 0210 nano-technology, Molecular beam epitaxy
Abstract: International audience; Diffusion at the AlN/Al0.3Ga0.7N interface was investigated by X-ray diffraction, high-angle annular dark field scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. AlN/Al0.3Ga0.7N superlattices (SLs) have been grown at 800 °C on (111) silicon substrates by ammoniaassisted molecular beam epitaxy. Annealings on a 5-pair SL, carried out at the growth temperature in an ammonia-based atmosphere from 1h to 115h, show the occurrence of a diffusion process illustrated by the increase of the interface layer thickness. The cation interdiffusion is found to be weakly concentration-dependent while it seems to be more strain-dependent. The mean diffusion coefficient value determined in this study at the AlN/Al0.3Ga0.7N interface is about 6⨯10-18 cm 2 /s at the growth temperature. The effect of the unintentional annealing of buried layers during long growth runs is exemplified on a 45-pair SL. The measurement of the actual composition profile along the growth direction shows the formation of an unintentional AlGaN graded layer of intermediate composition at each interface. The thickness of each of these interfacial layers is found to decrease along the SL growth direction, pointing towards the influence of the overall time spent at growth temperature as a determining parameter.
Published: 2021
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3. Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

Author: Thierry Guillet, Pierre Disseix, Blandine Alloing, Laetitia Doyennette, Edmond Cambril, Jesús Zúñiga-Pérez, M. Gromovyi, Stephanie Rennesson, G. Kreyder, F. Médard, Fabrice Semond, Joël Leymarie, Sophie Bouchoule, François Réveret, and Christelle Brimont
Subjects: Coupling, Physics, Photon, Condensed matter physics, Exciton, Physics::Optics, General Physics and Astronomy, 02 engineering and technology, Dielectric, Exciton-polaritons, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, law, Ellipsometry, 0103 physical sciences, Polariton, 010306 general physics, 0210 nano-technology, Waveguide
Abstract: We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T = 6 to 300 K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong-coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small (11%) dependence on the temperature. However, the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model overestimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to 82 ± 10 meV for fundamental transverse-electric mode; the experimental ellipsometry-based model leads to smaller values of 55 ± 6 meV. We evidence that, for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes' dispersion is not necessarily the signature of the strong coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility.
Published: 2020
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4. Blue Microlasers Integrated on a Photonic Platform on Silicon

Author: Jean-Yves Duboz, Xavier Checoury, Christelle Brimont, Benjamin Damilano, Fabrice Semond, Philippe Boucaud, Farsane Tabataba-Vakili, Thierry Guillet, Moustafa El Kurdi, Stephanie Rennesson, Sébastien Sauvage, Eric Frayssinet, Iännis Roland, Laetitia Doyennette, Bruno Gayral, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), ANR Quanonic, ANR Milagan, Labex Ganex, ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
Subjects: Materials science, Nanophotonics, FOS: Physical sciences, Physics::Optics, Applied Physics (physics.app-ph), 02 engineering and technology, Grating, 01 natural sciences, law.invention, 010309 optics, law, 0103 physical sciences, Electrical and Electronic Engineering, Quantum well, business.industry, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Whispering-gallery wave, Photonics, 0210 nano-technology, business, Waveguide, Lasing threshold, Biotechnology
Abstract: International audience; The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled emission is guided and outcoupled to free space using grating couplers. A small gap size of less than 100 nm between the disk and the waveguide is required in the blue spectral range for optimal evanescent coupling. To avoid reabsorption of the microdisk emission in the waveguide, the quantum wells are etched away from the waveguide. Under continuous-wave excitation, loaded quality factors greater than 2000 are observed for the whispering gallery modes for devices with small gaps and large waveguide bending angles. Under pulsed excitation conditions, lasing is evidenced for 3 μm diameter microdisks integrated in a full photonic circuit. We thus present a first demonstration of a III-nitride microlaser coupled to a nanophotonic circuit.
Published: 2018
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5. Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Author: Benjamin Damilano, Christelle Brimont, Stephanie Rennesson, Sébastien Sauvage, Thierry Guillet, Moustafa El Kurdi, Xavier Checoury, Fabrice Semond, Philippe Boucaud, Jean-Yves Duboz, Farsane Tabataba-Vakili, Eric Frayssinet, Laetitia Doyennette, Bruno Gayral, Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017)
Subjects: Materials science, Silicon, lcsh:Medicine, FOS: Physical sciences, chemistry.chemical_element, Physics::Optics, Applied Physics (physics.app-ph), 02 engineering and technology, Nitride, 7. Clean energy, 01 natural sciences, Article, 010309 optics, 0103 physical sciences, Lasers, LEDs and light sources, Spontaneous emission, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], lcsh:Science, Electronic circuit, Semiconductor lasers, Coupling, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Multidisciplinary, business.industry, lcsh:R, Physics - Applied Physics, 021001 nanoscience & nanotechnology, 3. Good health, Microresonators, Optics and photonics, chemistry, Optoelectronics, lcsh:Q, Photonics, Whispering-gallery wave, 0210 nano-technology, business, Lasing threshold, Physics - Optics, Optics (physics.optics)
Abstract: On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors., Comment: 10 pages, 6 figures, supplementary: 6 pages, 8 figures
Published: 2019
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6. III-nitride on silicon electrically injected microrings for nanophotonic circuits

Author: Stephanie Rennesson, Sébastien Sauvage, Philippe Boucaud, Benjamin Damilano, Thierry Guillet, Fabrice Semond, Bruno Gayral, Xavier Checoury, Farsane Tabataba-Vakili, Moustafa El Kurdi, Christelle Brimont, Laetitia Doyennette, Iännis Roland, Jean-Yves Duboz, Eric Frayssinet, Raffaele Colombelli, Bruno Paulillo, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017)
Subjects: Materials science, Silicon, Nanophotonics, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Applied Physics (physics.app-ph), Electroluminescence, 01 natural sciences, 010309 optics, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electronic circuit, Power density, business.industry, Direct current, Physics - Applied Physics, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, chemistry, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Photonics, 0210 nano-technology, business, Lasing threshold
Abstract: International audience; Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm 2 output power density at 20 mA from such microrings with diameters of 30 to 50 µm. The first steps towards achieving an integrated photonic circuit are demonstrated.
Published: 2019
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7. Towards III-nitride on silicon active photonic circuits

Author: Jean-Yves Duboz, Xavier Checoury, Stephanie Rennesson, Sébastien Sauvage, Laetitia Doyennette, Bruno Gayral, Fabrice Semond, Benjamin Damilano, Farsane Tabataba-Vakili, M. El Kurdi, Thierry Guillet, Christelle Brimont, Iännis Roland, Philippe Boucaud, Julien Brault, and Eric Frayssinet
Subjects: Materials science, Silicon, business.industry, chemistry.chemical_element, Gallium nitride, Nitride, Indium gallium nitride, Epitaxy, chemistry.chemical_compound, Semiconductor, chemistry, Optoelectronics, Photonics, business, Lasing threshold
Abstract: We present our progresses towards active photonic circuits based on III-nitride semiconductors epitaxially grown on silicon. We study in particular the critical coupling of lasing InGaN/GaN microdisks to adjacent suspended waveguides.
Published: 2019
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8. Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Author: Jean-Yves Duboz, Xavier Checoury, Fabrice Semond, Moustafa El Kurdi, Thierry Guillet, Philippe Boucaud, Iännis Roland, Stephanie Rennesson, Sébastien Sauvage, Farsane Tabataba-Vakili, Christelle Brimont, Bruno Gayral, Thi-Mo Tran, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), ANR-11-IDEX-0003,IPS,Idex Paris-Saclay(2011), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, and Université Nice Sophia Antipolis (... - 2019) (UNS)
Subjects: 010302 applied physics, Materials science, Silicon photonics, Physics and Astronomy (miscellaneous), Silicon, business.industry, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Physics - Applied Physics, Applied Physics (physics.app-ph), Nitride, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, chemistry, Q factor, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Absorption (electromagnetic radiation), Quantum well, Photonic crystal
Abstract: International audience; III-nitride-on-silicon L3 and H2 photonic crystal cavities with resonances down to 315 nm and quality factors up to 1085 at 337 nm have been demonstrated. The reduction of quality factor (Q) with decreasing wavelength is investigated. Besides the QW absorption below 340 nm a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 250 at 300 nm when no active layer is present.
Published: 2019
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9. A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy

Author: Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Rozenn Bernard, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, Stephanie Rennesson, Fabrice Semond, Gilles Patriarche, Ludovic Largeau, Pascal Turban, Anne Ponchet, Cornet, C., Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Université Nice Sophia Antipolis (... - 2019) (UNS)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract: International audience; In this work, we experimentally and theoretically clarify the III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at theearly stages of AlSb, AlN and GaP molecular beam epitaxy on Si, independently of strain. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems, this conclusion being reinforced when pretreatment of the Si surface is performed. Surface/interface contributions to the free energy changes are found to be prominent over strain relief processes. We finally propose a universal description of III-V/Si growth processes, including the description of antiphase boundaries formation.
Published: 2018

10. A general III-V/Si growth process description

Author: Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Rozenn Bernard, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, Stephanie Rennesson, Fabrice Semond, Gilles Patriarche, Ludovic Largeau, Pascal Turban, Anne Ponchet, Cornet, C., Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut de Physique de Rennes (IPR), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018

11. Proposition of a model elucidating the AlN-on-Si (111) microstructure

Author: Guy Feuillet, Jean-Luc Rouvière, Fabrice Semond, Philippe Vennéguès, Eric Frayssinet, N. Mante, Ludovic Largeau, Stephanie Rennesson, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Département d'Optronique (DOPT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Centre National de la Recherche Scientifique (CNRS)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA), Laboratoire d'Etude des Matériaux par Microscopie Avancée [?-2019] (LEMMA [?-2019]), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
Subjects: 010302 applied physics, Diffraction, [PHYS]Physics [physics], Misorientation, Condensed matter physics, Nucleation, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, Microstructure, 01 natural sciences, Surface energy, [SPI.MAT]Engineering Sciences [physics]/Materials, Lattice constant, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy
Abstract: AlN-on-Si can be considered as a model system for heteroepitaxial growth of highly mismatched materials. Indeed, AlN and Si drastically differ in terms of chemistry, crystalline structure, and lattice parameters. In this paper, we present a transmission electron microscopy and grazing incidence X-ray diffraction study of the microstructure of AlN layers epitaxially grown on Si (111) by molecular beam epitaxy. The large interfacial energy due to the dissimilarities between AlN and Si results in a 3D Volmer-Weber growth mode with the nucleation of independent and relaxed AlN islands. Despite a well-defined epitaxial relationship, these islands exhibit in-plane misorientations up to 6°–7°. We propose a model which quantitatively explains these misorientations by taking into account the relaxation of the islands through the introduction of 60° a-type misfit dislocations. Threading dislocations (TDs) are formed to compensate these misorientations when islands coalesce. TD density depends on two parameters: the islands' misorientation and density. We show that the former is related to the mismatch between AlN and Si, while the latter depends on the growth parameters. A large decrease in TD density occurs during the 3D growth stage by overlap and overgrowth of highly misoriented islands. On the other hand, the TD density does not change significantly when the growth becomes 2D. The proposed model, explaining the misorientations of 3D-grown islands, may be extended to other (0001)-oriented III-nitrides and more generally to any heteroepitaxial system exhibiting a 3D Volmer-Weber growth mode with islands relaxed thanks to the introduction of mixed-type misfit dislocations.AlN-on-Si can be considered as a model system for heteroepitaxial growth of highly mismatched materials. Indeed, AlN and Si drastically differ in terms of chemistry, crystalline structure, and lattice parameters. In this paper, we present a transmission electron microscopy and grazing incidence X-ray diffraction study of the microstructure of AlN layers epitaxially grown on Si (111) by molecular beam epitaxy. The large interfacial energy due to the dissimilarities between AlN and Si results in a 3D Volmer-Weber growth mode with the nucleation of independent and relaxed AlN islands. Despite a well-defined epitaxial relationship, these islands exhibit in-plane misorientations up to 6°–7°. We propose a model which quantitatively explains these misorientations by taking into account the relaxation of the islands through the introduction of 60° a-type misfit dislocations. Threading dislocations (TDs) are formed to compensate these misorientations when islands coalesce. TD density depends on two parameters: the...
Published: 2018
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12. Impact of AlN/Si Nucleation Layers Grown Either by NH 3 -MBE or MOCVD on the Properties of AlGaN/GaN HFETs

Author: M. Wieneke, Stephanie Rennesson, Hady Yacoub, Andrei Vescan, Jürgen Bläsing, Fabrice Semond, Thorsten Zweipfennig, André Strittmatter, Armin Dadgar, Holger Kalisch, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, business.industry, Nucleation, Algan gan, 02 engineering and technology, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, 0103 physical sciences, Materials Chemistry, Optoelectronics, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018
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13. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE

Author: Ludovic Largeau, Farid Medjdoub, Mohamed Al Khalfioui, Fabrice Semond, Jean Massies, Stephanie Rennesson, Sébastien Chenot, Ezgi Dogmus, M. Nemoz, Malek Zegaoui, Mathieu Leroux, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Nice Sophia Antipolis (1965 - 2019) (UNS), and ANR-17-CE05-0013,BREAkuP,Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance(2017)
Subjects: 010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, Surfaces and Interfaces, Substrate (printing), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Materials Chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, business, Ohmic contact, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2018
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14. A universal description of III-V/Si epitaxial growth processes

Author: Maxime Vallet, Stephanie Rennesson, Nicolas Bertru, Fabrice Semond, Laurent Pedesseau, Simon Charbonnier, Pascal Turban, Eric Tournié, A. Le Corre, Gilles Patriarche, Jean-Baptiste Rodriguez, Charles Cornet, Anne Ponchet, Antoine Létoublon, Rozenn Bernard, Ludovic Largeau, Ida Lucci, Laurent Cerutti, Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Region Bretagne, ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014), ANR-17-CE24-0019,ORPHEUS,Phénomènes optiques du second ordre dans les microdisques de phosphure de gallium intégrés sur silicium(2017), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Université Nice Sophia Antipolis (... - 2019) (UNS)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Condensed Matter - Materials Science, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Crystal growth, 02 engineering and technology, Strain relief, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, 0103 physical sciences, Microscopy, General Materials Science, Wetting, 0210 nano-technology
Abstract: Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation., includes the manuscript file and the supplemental materials
Published: 2018
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15. III-nitride on silicon microdisks: electrical injection and bus waveguide side-coupling (Conference Presentation)

Author: Thierry Guillet, Julien Brault, Xavier Checoury, Iännis Roland, Christelle Brimont, Philippe Boucaud, Raffaele Colombelli, Bruno Paulillo, Fabrice Semond, Moustafa El Kurdi, Farsane Tabataba-Vakili, Eric Frayssinet, Benjamin Damilano, Bruno Gayral, and Stephanie Rennesson
Subjects: Materials science, business.industry, Nanophotonics, Laser, law.invention, Optical pumping, law, Q factor, Optoelectronics, Photonics, business, Waveguide, Quantum well, Photonic crystal
Abstract: Group-III-nitride nanophotonics on silicon is a booming field, from the near-IR to the UV spectral range. The main interest of III-nitride nanophotonic circuits is the integration of active structures and laser sources. Laser sources with a small footprint can be obtained with microresonators formed by photonic crystals or microdisks, exhibiting quality factors up to a few thousand down to the UV-C. So far, single microdisk laser devices have been demonstrated, mostly under optical pumping. Combining microdisk lasers under electrical injection with passive devices represents a major challenge in realizing a viable III-nitride nanophotonic platform on silicon. As a first step to realize this goal, we have separately demonstrated electroluminescence from microdisks and side-coupling of microdisks to bus waveguides with outcoupling gratings in the blue spectral range. We have developed the fabrication of electrically injected microdisks with a circular p-contact on top of the disk that is connected to a larger pad via a mechanically stable metal microbridge. Blue electroluminescence is observed under current injection at room temperature. We also demonstrated high Q factor (Q > 2000) WGMs in the blue spectral range from microdisks side-coupled to bus waveguides, as measured from the luminescence of embedded InGaN quantum wells. The WGM resonances are clearly observed through outcoupling gratings following propagation in partially etched waveguides to remove quantum well absorption. Small gaps between microdisks and bus waveguides of around 100 nm are necessary for efficient coupling in the blue spectral range, which represents a major fabrication challenge. We will discuss the progress brought by these building blocks to generate future III-nitride photonic circuits.
Published: 2018
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16. III-Nitride on silicon photonic circuits

Author: Farsane Tabataba-Vakili, Thierry Guillet, M. P. De Micheli, Stephanie Rennesson, Sébastien Sauvage, Julien Selles, Xavier Checoury, Iännis Roland, Christelle Brimont, Jean-Yves Duboz, Bruno Gayral, M. El Kurdi, Philippe Boucaud, Y. Zeng, M. Gromovyi, and Fabrice Semond
Subjects: 010302 applied physics, Materials science, Silicon photonics, Silicon, business.industry, Photonic integrated circuit, Physics::Optics, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Yablonovite, Condensed Matter::Materials Science, chemistry.chemical_compound, Resonator, chemistry, 0103 physical sciences, Electronic engineering, Optoelectronics, Photonics, 0210 nano-technology, business, Photonic crystal
Abstract: We present recent progress achieved with III-nitride photonic circuits epitaxially grown on silicon(111). The photonic circuits embed two-dimensional photonic crystals and microdisk resonators coupled to suspended waveguides. We discuss the linear and nonlinear response of the resonators through second and third harmonic generation.
Published: 2017
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17. Short-wave infrared (λ = 3 μ m) intersubband polaritons in the GaN/AlN system

Author: T. Laurent, C. B. Lim, Eva Monroy, Fabrice Semond, R. Colombelli, Jean-Michel Manceau, F. H. Julien, Stephanie Rennesson, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire Ecologie Fonctionnelle et Environnement (ECOLAB), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut Ecologie et Environnement (INEE), Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), Laboratoire Ecologie Fonctionnelle et Environnement (LEFE), Institut Ecologie et Environnement (INEE), Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Observatoire Midi-Pyrénées (OMP), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Institut de Recherche pour le Développement (IRD)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)
Subjects: Materials science, Physics and Astronomy (miscellaneous), 02 engineering and technology, 01 natural sciences, Condensed Matter::Materials Science, Resonator, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], 0103 physical sciences, Dispersion (optics), Polariton, Short wave infrared, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed Matter::Other, business.industry, Wavelength range, Wide-bandgap semiconductor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Wavelength, Semiconductor, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract: We demonstrate intersubband polaritons in the short-infrared wavelength range (λ
Published: 2017
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18. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Author: Javier Mateos, Yvon Cordier, O. Garcia-Perez, Tomas Gonzalez, Susana Perez, P. Altuntas, Stephanie Rennesson, H. Sanchez-Martin, Virginie Hoel, Ignacio Iniguez-de-la-Torre, Universidad de Salamanca, Departamento de Fisica Aplicada, Universidad de Salamanca, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Direccion General de Investigacion (MICINN)Spanish Government [TEC2013-41640-R], Consejeria de Educacion de la Junta de Castilla y Leon [SA052U13], French National Research AgencyFrench National Research Agency (ANR) [ANR-10-BLAN-0303], University of Salamanca, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-10-BLAN-0303,STARGAN,EtudeS de sTructures Avancées de la filière nitRure de gallium (GaN)(2010), Departamento de Fisica Aplicada [Salamanca], and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
Subjects: Materials science, Transconductance, Gallium nitride, 02 engineering and technology, 01 natural sciences, law.invention, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Electrical and Electronic Engineering, 010302 applied physics, business.industry, Transistor, microwave transistors, Conductance, 020206 networking & telecommunications, small signal equivalent circuit, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, Frequency dispersion, high electron mobility transistor (HEMT), Equivalent circuit, Optoelectronics, Microwave range, gallium nitride (GaN), traps, business, Relevant information
Abstract: International audience; The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the microwave range, both in the transconductance and output conductance, are analyzed. This anomalous response, which is mitigated by high-bias conditions, is attributed to the presence of traps and defects both in the volume of the GaN channel and in the source and drain contacts. A simple equivalent circuit model is proposed to replicate the dispersive response of the transistor, achieving an excellent agreement with the measured S-parameters and thus providing relevant information about its characteristic frequency.
Published: 2017
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19. Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

Author: F. Lecourt, Virginie Hoel, Yvon Cordier, Nicolas Defrance, Stephanie Rennesson, Jean Claude De Jaeger, Sébastien Chenot, Marie Lesecq, Etienne Okada, and M. Chmielowska
Subjects: Electron mobility, Materials science, business.industry, Mechanical Engineering, Induced high electron mobility transistor, High-electron-mobility transistor, Condensed Matter Physics, Epitaxy, Barrier layer, Mechanics of Materials, Optoelectronics, General Materials Science, business, Microwave, Sheet resistance, Power density
Abstract: The aim of this paper is to optimize the epitaxial layer structure of an AlGaN/GaN high electron mobility transistor (HEMT) for high power density at high frequency. The idea is to play on the polarization engineering with the different layers of the epitaxial stack. The influence of the cap and barrier layer thicknesses, the aluminum content in the barrier and the insertion of an AlGaN buffer layer are studied through the electron gas density, electron mobility and sheet resistance. This permits to find out the best trade-off in order to satisfy the requirements for high performances.
Published: 2014
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20. Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

Author: Yvon Cordier, F. Lecourt, Jean-Claude De Jaeger, Adrien Cutivet, A. Agboton, Virginie Hoel, Marie Lesecq, Etienne Okada, P. Altuntas, Stephanie Rennesson, Nicolas Defrance, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Research National Agency within the frame of STARGaN Project [NT09_479311], RENATECH Technological Network, Cluster of Excellence GANEX [ANR-11-LABX-0014], Renatech Network, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-10-BLAN-0303,STARGAN,EtudeS de sTructures Avancées de la filière nitRure de gallium (GaN)(2010), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
Subjects: Power gain, Materials science, Transconductance, millimeter-wave power density, Gallium nitride, 02 engineering and technology, Substrate (electronics), 01 natural sciences, law.invention, AlGaN/GaN, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, law, 0103 physical sciences, Electrical and Electronic Engineering, Power density, 010302 applied physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, Cutoff frequency, Electronic, Optical and Magnetic Materials, Ka-band, chemistry, high electron mobility transistor (HEMT), Optoelectronics, Atomic physics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract: This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 $\text{A}\cdot $ mm $^{-1}$ and a peak extrinsic transconductance of 374 mS $\cdot $ mm $^{-1}$ are obtained for 75-nm gate length device. At $V_{\rm DS} = 25$ V, continuous-wave output power density of 2.7 $\text{W}\cdot $ mm $^{-1}$ is achieved at 40 GHz associated with 12.5% power-added efficiency and a linear power gain ( $G_{p})$ of 6.5 dB. The device exhibits an intrinsic current gain cutoff frequency $F_{T}$ of 116 GHz and a maximum oscillation frequency $F_{\rm MAX}$ of 150 GHz. This performance demonstrates the capability of low cost microwave power devices up to Ka-band.
Published: 2015
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21. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

Author: Benjamin Damilano, Yvon Cordier, Philippe Vennéguès, Stephanie Rennesson, and Sébastien Chenot
Subjects: Materials science, Silicon, business.industry, Transistor, chemistry.chemical_element, Heterojunction, Algan gan, Surfaces and Interfaces, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Ammonia, chemistry.chemical_compound, chemistry, Hall effect, law, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Fermi gas, Molecular beam epitaxy
Abstract: We report on the study of AlGaN/GaN high electron mobility transistors (HEMTs) incorporating an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy (NH3-MBE). The structural characterizations confirm the good crystalline quality of the heterostructure and the pseudomorphic growth of InGaN. This is also verified by the Hall effect mobility of about 2130 cm2 V−1 s−1. The associated two-dimensional electron gas carrier concentration is in the range of 8 × 1012 cm−2 for heterostructures grown on GaN:Fe-on-sapphire templates. Normal DC transistor operation is observed. Similar results have been obtained on silicon substrates. To our knowledge, this is the first demonstration of AlGaN/GaN HEMTs with an InGaN back-barrier grown by NH3-MBE.
Published: 2013
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22. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Author: Thierry Guillet, Iännis Roland, Julien Selles, M. El Kurdi, V. Crepel, Benjamin Damilano, Fabrice Semond, Philippe Boucaud, Bruno Gayral, Meletios Mexis, Xavier Checoury, Stephanie Rennesson, Christelle Brimont, Mathieu Leroux, Matière et Systèmes Complexes (MSC (UMR_7057)), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-13-BS10-0010,QUANONIC,Optique quantique et non-linéaire dans des cavités nitrures(2013), Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Matière et Systèmes Complexes (MSC), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
Subjects: Materials science, Physics and Astronomy (miscellaneous), Physics::Optics, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, Optical pumping, Resonator, Condensed Matter::Materials Science, Optics, law, 0103 physical sciences, 010302 applied physics, business.industry, Quantum-confined Stark effect, Wide-bandgap semiconductor, 021001 nanoscience & nanotechnology, Laser, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Photonics, 0210 nano-technology, business, Ternary operation, Lasing threshold
Abstract: We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm–470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. This demonstrates the versatility of this nitride-on-silicon platform, and the realization on this platform of efficient active layers for lasing action over a 200 nm broad UV to visible spectral range. We probe the lasing threshold carrier density over the whole spectral range and found that it is similar whatever the emission wavelength for these Q > 1000 microdisk resonators with a constant material quality until quantum confined Stark effect takes over. The threshold is also found independent of microdisk diameters from 3 to 12 μm, with a β factor intermediate between the one of vertical cavity lasers and the one of small modal volume “thresholdless” lasers.
Published: 2016
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23. Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Author: Guy Feuillet, Fatih Akyol, Tomas Palacios, Hubert Renevier, Markus R. Wagner, Sergio Fernández-Garrido, Juan Sebastián Reparaz, Oliver Brandt, Stephanie Rennesson, Stacia Keller, Liverios Lymperakis, Achim Trampert, Karine Hestroffer, Siddharth Rajan, Jesús Zúñiga-Pérez, Xiang Kong, Vincent Consonni, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Paul-Drude-Institut für Festkörperelektronik (PDI), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Service de Physique des Matériaux et des Microstructures, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nanostructure, Materials science, Nanowire, Nucleation, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, GaN, 0103 physical sciences, polarity, ddc:530, Thin film, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure, 010302 applied physics, polarization, business.industry, Wide-bandgap semiconductor, zinc oxide, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 530 Physik, Polarization density, Nanolithography, ZnO, Optoelectronics, 0210 nano-technology, business, gallium nitride
Abstract: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919., The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.
Published: 2016
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24. Opto-electrical characterization of infrared sensors based on carbon nanotube films

Author: Riad Haïdar, Sylvain Maine, Brigitte Trétout, Jean-Luc Pelouard, Charlie Koechlin, Stephanie Rennesson, and Annick Loiseau
Subjects: Materials science, business.industry, Infrared, Contact resistance, Bolometer, General Engineering, Energy Engineering and Power Technology, Nanotechnology, Carbon nanotube, law.invention, Optical properties of carbon nanotubes, law, Dispersion (optics), Optoelectronics, business, Absorption (electromagnetic radiation), Sheet resistance
Abstract: A large array of devices based on a carbon nanotubes film was realized. Electrical characterization by the transfer length method enables the determination of the sheet resistance, and contact resistance, which is extremely low. The resistance dispersion is shown to be due to the film non-uniformity, and is low enough to enable the realization of bolometer focal plane arrays. A decrease of the resistance with the temperature is observed and leads to a TCR of − 0.2 % K − 1 . The strong absorption of carbon nanotubes films in the mid infrared transmission band (3–5 μm and of 8–14 μm) enables us to demonstrate the first carbon nanotubes photo response for these wavelengths.
Published: 2010
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25. Laser damage of free-standing nanometer membranes

Author: Philippe Boucaud, Peter Baum, Stephanie Rennesson, Fabrice Semond, Iännis Roland, and Yuya Morimoto
Subjects: Materials science, Band gap, business.industry, Attosecond, Ultrafast electron diffraction, General Physics and Astronomy, Laser, 01 natural sciences, law.invention, 010309 optics, Membrane, law, Ionization, 0103 physical sciences, Microscopy, Optoelectronics, ddc:530, Nanometre, 010306 general physics, business
Abstract: Many high-field/attosecond and ultrafast electron diffraction/microscopy experiments on condensed matter require samples in the form of free-standing membranes with nanometer thickness. Here, we report the measurement of the laser-induced damage threshold of 11 different free-standing nanometer-thin membranes of metallic, semiconducting, and insulating materials for 1-ps, 1030-nm laser pulses at 50 kHz repetition rate. We find a laser damage threshold that is very similar to each corresponding bulk material. The measurements also reveal a band gap dependence of the damage threshold as a consequence of different ionization rates. These results establish the suitability of free-standing nanometer membranes for high-field pump-probe experiments. published
Published: 2017
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26. Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

Author: Jean-Claude De Jaeger, Marie Lesecq, M. Chmielowska, Sébastien Chenot, Etienne Okada, Stephanie Rennesson, Virginie Hoel, Yvon Cordier, Nicolas Defrance, F. Lecourt, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, Silicon, chemistry.chemical_element, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, law, Electric field, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, Power density, 010302 applied physics, business.industry, Transistor, Wide-bandgap semiconductor, Heterojunction, 021001 nanoscience & nanotechnology, Polarization (waves), Electronic, Optical and Magnetic Materials, Active layer, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract: In this paper, we propose to optimize Al0.29Ga0.71N/GaN heterostructures on silicon substrate to obtain high electron mobility transistors featuring high-power/frequency performances. The polarization electric fields are engineered by varying the layer thicknesses of the cap and the barrier, and by changing the type of buffer (GaN or AlGaN). The aim of this paper is to find the best tradeoff between the active layer thickness reduction and the achievement of a reasonable drain current to satisfy the requirements for high performances. The optimum heterostructure device presents an output power density of 1.5 W/mm at 40 GHz, among the best reported on silicon substrate.
Published: 2013
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27. Complex optical index of single wall carbon nanotube films from the near-infrared to the terahertz spectral range

Author: Simon Salort, Jean-Luc Pelouard, Julien Jaeck, Riad Haïdar, Bruno Chassagne, Stephanie Rennesson, Charlie Koechlin, Fabrice Pardo, and Sylvain Maine
Subjects: Materials science, Absorption spectroscopy, Terahertz radiation, Infrared, business.industry, Near-infrared spectroscopy, Physics::Optics, Astrophysics::Cosmology and Extragalactic Astrophysics, Carbon nanotube, Atomic and Molecular Physics, and Optics, Terahertz spectroscopy and technology, law.invention, Condensed Matter::Materials Science, Optics, law, Electrical and Electronic Engineering, Fourier transform infrared spectroscopy, Spectroscopy, business, Engineering (miscellaneous), Astrophysics::Galaxy Astrophysics
Abstract: We retrieve the complex optical index of single-walled carbon nanotube (CNT) films in the 0.6–800 μm spectral range. Results are obtained from a complete set of optical measurements, reflection and transmission, of free-standing CNT films using time domain spectroscopy in the terahertz (THz) and Fourier transform infrared (IR) spectroscopy in the visible–IR. Based on a Drude–Lorentz model, our results reveal a global metallic behavior of the films in the IR, and confirm their high optical index in the THz range.
Published: 2012

28. High quality factor photonic resonators for nitride quantum dots

Author: Meletios Mexis, Bernard Gil, Bruno Gayral, Thierry Guillet, Sylvain Sergent, Diane Sam-Giao, Stephanie Rennesson, Delphine Néel, Thierry Bretagnon, Mathieu Leroux, Christelle Brimont, Philippe Boucaud, Sylvain David, Fabrice Semond, Xavier Checoury, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-08-NANO-0021,SINPHONI,Nanophotonique à base de nitrures intégrée sur silicium(2008), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)
Subjects: 010302 applied physics, Materials science, business.industry, 02 engineering and technology, Nitride, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Waveguide (optics), Spectral line, Electronic, Optical and Magnetic Materials, Resonator, Optics, Quality (physics), Quantum dot, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Optoelectronics, Photonics, 0210 nano-technology, business, Photonic crystal
Abstract: Phone: þ00 33 4 67 14 37 89, Fax: 00 33 4 67 14 37 60We report the realization and the optical study of nitridephotonic resonators dedicated to the blue and UV spectralrange. Microdisks and photonic crystal (PC) cavities areinvestigated containing GaN/AlN quantum dots (QDs)embedded in an AlN waveguide. The PC cavities are fabricatedthrough the conformal growth of nitrides on a patterned Sisubstrate,and presentdelocalized and conﬁnedcavity modesintheir microphotoluminescence spectra, that are compared tosimulations. A large quality factor of 1800 is reached for amodiﬁed L3 cavity. In the case of microdisks, which arefabricated through a classical top-down approach, the series ofwhispering gallery modes (WGMs) with large quality factors(up to 7300) are observed and analysed.
Published: 2012
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29. Potential of carbon nanotubes films for infrared bolometers

Author: Stephanie Rennesson, J. Jaeck, Brigitte Trétout, Nicolas Péré-Laperne, Sylvain Maine, Riad Haïdar, Jean-Luc Pelouard, and Charlie Koechlin
Subjects: Amorphous silicon, Materials science, Fabrication, business.industry, Bolometer, Microbolometer, Large format, Carbon nanotube, Integrated circuit, Noise-equivalent temperature, law.invention, chemistry.chemical_compound, Optics, chemistry, law, Optoelectronics, business
Abstract: We investigate in this paper the potential of carbon nanotubes for infrared bolometers. A method to obtain CNT film layer and technological processes to obtain matrix of devices are presented. The electrical characterization of samples establishes the quality of our technology i.e. low contact resistance, and weak dispersion between devices. The potential of carbon nanotub es films as bolometric material is investigated by measuring the thermal dependence of their resistance and by comparison with amorphous silicon (one of the leading material for bolometric applications). Optical measurements of CNT films in the infrared and THz ranges show a relatively high absorption for a few hundreds nanometers thick material. Eventually the infrared (8-12 m) photo-response of a first demonstrator is presented and discussed. Keywords : uncooled IR detector, microbolometer, single wall carbon nanotube. INTRODUCTION Over the last decade, the market of infrared bolometers focal plane array (FPA) has shown a rapid growth. The vanadium oxides originally developed by Honeywell, and the amorphous silicon pushed forward by ULIS and CEA-LETI are the main technologies [1]. Since the first generation of FPA, various improvements have been made. In the case of ULIS, they gradually decrease the pitch of their pixels from 50 P m in 1998 [2], to 17 P m in 2009 [3]. This enables the realization of large format FPA: 1024*768 pixels and decrease of manufacturing costs. In order to compensate the inherent decrease of the Noise Equivalent Temperature Detectivity (NETD) due to the reduction of the pitch, improvements were made on the thermal insulation of the suspended membranes by means of advanced UV-photolithography processes. Attention was also paid to the reduction of the noise by an improvement of the fabrication process of the amorphous silicon and by advanced design of pixels. Nevertheless this roadmap will be in the next future less and less relevant, especially because further reduction of the pitch will reach the diffraction limit for the LWIR (8-14 P m). Absorption and fill factor of the FPA are already closed to their ideal values. Improvement of performance or reduction of the cost can still be made by progress in smart and efficient read-out integrated circuit ROIC, which is a key point of the uncooled FPA success. Recently progress has been reported in the packaging, by pixel level encapsulation [4]. Improvement of the performances can also be made by a change of the bolometric materials [5]. It is worth noticing that the two same materials have been driving the market for tw enty years. Recently, following th e results shown by Itkis et al. [6] on the bolometric behavior of carbon nanotube (C NT) films, ONERA, the French aerospace labs and LPN-CNRS founded by the French MOD, have chosen to investigate the potential of carbon nanotubes films as bolometers. First we will present the fabrication and report processes of our material: Single Wall Carbon Nanotubes (SWCNT) films. Then we will focus on the fabrication processes developed in our clean room facilities, and the electrical characterization of the fabricated devices. The next part will deal with the potential of SWCNT films as a thermistor. Then we will detail the optical characterization of our material, and eventually show the infrared (8-12 m) photo-response of our first generation of bolometric sensors.
Published: 2011
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30. CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

Author: Marc Portail, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski, Remi Comyn, Luan Nguyen, Yvon Cordier, and Philippe Vennéguès
Subjects: silicon carbide, aluminum nitride, chemical vapor deposition, epitaxy, Crystallography, QD901-999
Abstract: (111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural quality than the 3C-SiC films grown directly on Si(111) using the well-established two-step carbonization–epitaxy process. The good lattice match of 3C-SiC with AlN may open a reliable route towards high-quality thin heteroepitaxial 3C-SiC films on a silicon wafer. Nevertheless, the 3C-SiC was featured by the presence of twinned domains and small inclusions of 6H-SiC. The formation of a thin AlSiN film at the AlN/Si interface is also reported. This is the first time such AlSiN layers are described within an AlN/Si heterostructure. Furthermore, noticeable modifications were observed in the AlN film. First, the growth process of SiC on AlN induced a reduction of the dislocation density in the AlN, attesting to the structural healing of AlN with thermal treatment, as already observed for other AlN-based heterostructures with higher-temperature processes. The growth of SiC on AlN also induced a dramatic reduction in the insulating character of the AlN, which could be related to a noticeable cross-doping between the materials.
Published: 2022
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31. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

Author: A. Fontserè, J. Llobet, Sébastien Chenot, N. Baron, Amador Pérez-Tomás, Marcel Placidi, Stephanie Rennesson, Yvon Cordier, and J. C. Moreno
Subjects: Materials science, business.industry, Wide-bandgap semiconductor, Sapphire, General Physics and Astronomy, Optoelectronics, Breakdown voltage, Heterojunction, business, Epitaxy, Molecular beam, Leakage (electronics), Molecular beam epitaxy
Abstract: The vertical bulk (drain-bulk) current (Idb) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental Idb (25–300 °C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (Ea), the (soft or destructive) vertical breakdown voltage (VB), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (Ea = 0.35 eV at T = 25–300 °C; VB = 840 V), GaN-on-sapphire follows the trap assisted mechanism (Ea = 2.5 eV at T > 265 °C; VB > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (Ea = 0.35 eV at T > 150 °C; VB = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage curr...
Published: 2013
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32. Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

Author: J. C. Moreno, Stephanie Rennesson, A. Fontserè, Yvon Cordier, Sébastien Chenot, Amador Pérez-Tomás, N. Baron, and Marcel Placidi
Subjects: Materials science, Physics and Astronomy (miscellaneous), Silicon, business.industry, Schottky effect, Wide-bandgap semiconductor, chemistry.chemical_element, Schottky diode, Epitaxy, chemistry, Saturation current, Sapphire, Optoelectronics, business, Leakage (electronics)
Abstract: GaN-based power switches are expected to play a key role in uncooled electronics at elevated temperatures. In this paper we explore the thermal activation mechanisms taking place in analogous AlGaN/GaN high electron mobility transistors grown on silicon and sapphire. The on-resistance (α = 1.4/1.8 [Si/sapphire]) and saturation current (α = −1.5/−1.8) temperature coefficients, the thermal activation energies (Ea = 0.02–0.30/0.30 eV), the drain current on/off ratio (α = −1.5–9.1/−9.4), or the thermal impedances (Rth = 76.9/125.8 K/W) were determined and comparatively analyzed by means of physical-based models which include polar-optical phonon scattering, Poole-Frenkel trap assisted and Schottky emission, and the channel self-heating.
Published: 2013
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33. III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation

Author: Ida Lucci, Simon Charbonnier, Laurent Pedesseau, Maxime Vallet, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Rozenn Bernard, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, Stephanie Rennesson, Fabrice Semond, Gilles Patriarche, Ludovic Largeau, Pascal Turban, Anne Ponchet, Cornet, C., Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-14-CE26-0014,ANTIPODE,Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés(2014), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Université Nice Sophia Antipolis (... - 2019) (UNS)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
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33 results on '"Stephanie Rennesson"'

1. How a ridge polariton laser is different from a standard ridge laser

2. Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy

3. Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

4. Blue Microlasers Integrated on a Photonic Platform on Silicon

5. Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

6. III-nitride on silicon electrically injected microrings for nanophotonic circuits

7. Towards III-nitride on silicon active photonic circuits

8. Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

9. A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy

10. A general III-V/Si growth process description

11. Proposition of a model elucidating the AlN-on-Si (111) microstructure

12. Impact of AlN/Si Nucleation Layers Grown Either by NH 3 -MBE or MOCVD on the Properties of AlGaN/GaN HFETs

13. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE

14. A universal description of III-V/Si epitaxial growth processes

15. III-nitride on silicon microdisks: electrical injection and bus waveguide side-coupling (Conference Presentation)

16. III-Nitride on silicon photonic circuits

17. Short-wave infrared (λ = 3 μ m) intersubband polaritons in the GaN/AlN system

18. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

19. Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

20. Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

21. AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

22. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

23. Polarity in GaN and ZnO: Theory, measurement, growth, and devices

24. Opto-electrical characterization of infrared sensors based on carbon nanotube films

25. Laser damage of free-standing nanometer membranes

26. Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

27. Complex optical index of single wall carbon nanotube films from the near-infrared to the terahertz spectral range

28. High quality factor photonic resonators for nitride quantum dots

29. Potential of carbon nanotubes films for infrared bolometers

30. CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

31. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

32. Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

33. III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation

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33 results on '"Stephanie Rennesson"'

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