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Recent developments in inherently selective atomic layer deposition (ISALD) resulted in the deposition of amorphous ZrO2 thin film on Si with a high growth rate (2 Å/cycle). The deposited film with a high dielectric constant via ISALD may be used in semiconductor processing. However, the amorphous nature of the film and the ZrO2–SiO2/Si interface must be assessed to ensure the prevention of leakage current. There is little information available in the literature regarding the ZrO2–SiO2/Si interface of atomic layer deposition (ALD) ZrO2 film. In this study, high‐resolution transmission electron microscopy was extensively used to determine whether the film and the interface were crystalline or amorphous. It was interesting to find that a high‐energy electron beam can induce crystallinity in the amorphous as‐deposited ZrO2 film within minutes of exposure. Moreover, outward diffusion of the nucleated tetragonal ZrO2 away from the interface was also observed. [ABSTRACT FROM AUTHOR]

Discusses chemical vapor deposition epitaxy on patternless and patterned substrates for an electronic materials processing course. Describes the processs types and features of epitaxy. Presents some potential problems of epitaxy. Lists 38 references. (YP)

Research is presented concerning the use of Fourier transform infrared spectroscopy to investigate the characteristics of ultrathin silicon oxide films. The films were thermally grown on Si (100).

Rapid thermal oxidation of Si in ozone gas is studied by using in situ mirror enhanced reflection Fourier transform infrared (IR) spectroscopy at temperatures between 200 and 550 degreeC. The oxidation rate in ozone is found to be comparable to the one in pure oxygen at approximately 200 degree C higher temperature.

A new study aims to understand the effect of temperature on low temperature ozone oxidation of silicon germanium alloys.

Research was conducted to examine the various processing sequences to derive a bimodal N concentration profile with one peak close to the dielectric/Si interface and the other near the top surface of the dielectric. Suggestions on how to optimize the amount and concentration profile of the incorporated N by the use of process-property relationships are presented. An investigation of the N incorporation was also performed.

A study was conducted relating to research on the nature and occurrence of copper surface oxidation in aqueous solution-related ambient environments. Surface enhanced Raman spectroscopy was used to probe the surface structural changes linked to potential dependent oxidation and reduction of copper in alkaline, neutral and acidic media. Experimental methodology, findings and implications are discussed. Results are also compared with evidence derived from previous experiments which confirm adsorbed oxygen on copper electrodes.

A study was conducted to analyze the transient reduction kinetics associated with surface rhodium oxide by gaseous H2 and Co. Surface-enhanced Raman spectroscopy was carried out to perform the analysis. The rhodium films were made using disks cut from gold foils. The gas-phase composition was observed by leaking the reactor gas into a quadrupole mass spectrometer. Experimental results indicated the effectiveness of Raman spectroscopy in in situ surface chemical characterization studies.