1. Atomic Layer Deposited RuO2 Diffusion Barrier for Next Generation Ru‐Interconnects.
- Author
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Kim, Youn‐Hye, Kim, Minsu, Kotsugi, Yohei, Cheon, Taehoon, Mohapatra, Debananda, Jang, Yujin, Bae, Jong‐Seong, Hong, Tae Eun, Ramesh, Rahul, An, Ki‐Seok, and Kim, Soo‐Hyun
- Subjects
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DIFFUSION barriers , *ATOMIC layer deposition , *MULTILAYERED thin films , *DIFFUSION , *THIN films , *3-D films - Abstract
Atomic layer deposition (ALD) is a suitable technology for conformally depositing thin films on nanometer‐scale 3D structures. RuO2 is a promising diffusion barrier for Ru interconnects owing to its compatibility with Ru ALD and its remarkable diffusion barrier properties. Herein, a RuO2 diffusion barrier using an ALD process is developed. The highly reactive Ru precursor [tricarbonyl(trimethylenemethane)ruthenium] and improved O2 supply enable RuO2 deposition. The optimal process conditions [pulsing time ratio (tO2/tRu): 10, process pressure: 1 Torr, temperature: 180 °C] are established for the RuO2 growth. Growth parameters, such as the growth rate (0.56 Å cycle–1), nucleation delay (incubation period: 6 cycles), and conformality (step coverage: 100%), are also confirmed on the SiO2 substrate. The structural and electrical properties of the Ru/RuO2/Si multilayer are investigated to explore the diffusion barrier performance of the ALD‐RuO2 film. The formation of Ru silicide does not occur without the conductivity degradation of the Ru/RuO2/Si multilayer with an increase in the annealing temperature up to 850 °C, thus demonstrating that interdiffusion of Ru and Si is completely suppressed by a thin (5 nm) ALD‐RuO2 film. Consequently, the practical growth behavior and diffusion barrier performance of RuO2 can serve as a potential diffusion barrier for Ru interconnects. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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