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Your search keyword '"Xavier Fonteneau"' showing total 3 results
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3 results on '"Xavier Fonteneau"'

1. SiC Vertical JFET Pure Diode-Less Inverter Leg

Author

Sebastien Oge, Fabien Dubois, Florent Morel, Xavier Fonteneau, Dominique Bergogne, Hervé Morel, Remy Ouaida, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Thales Microelectronics, and entreprise

Subjects
Materials science, Silicon Carbide, business.industry, 020208 electrical & electronic engineering, 05 social sciences, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, Vertical JFET, JFET, 02 engineering and technology, Thermal conduction, Threshold voltage, chemistry.chemical_compound, Safe operation, chemistry, Diode Less, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Inverter, 0501 psychology and cognitive sciences, Inverter Leg, business, 050107 human factors, Voltage, Diode
Abstract

International audience; The aim of this paper is to investigate the ability of a vertical structure JFET to operate in an inverter leg without any internal or external diode. The JFET is characterized to show the reverse conduction capability while the gate-to-source voltage is lower than the threshold voltage. An inverter leg is tested at 540 V /5 A and 50 kHz. A specific test board is implemented to assess a safe operation over a period of time.

Published
2013
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2. Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode

Author

Hervé Morel, Philippe Lahaye, Xavier Fonteneau, Florent Morel, Eliana Rondon-Pinilla, Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), ECA-EN, and entreprise

Subjects
Materials science, current injection, gate control, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, 0103 physical sciences, Normally-Off SiC JFET, 0202 electrical engineering, electronic engineering, information engineering, Silicon carbide, Gate driver, Diode, 010302 applied physics, business.industry, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, JFET, Schottky diode, reverse conduction, chemistry, Logic gate, Optoelectronics, MESFET, business, Voltage
Abstract

International audience; This document shows the behaviour of a SiC switch built with Normally-Off JFETs and a Schottky diode when the JFETs are controlled with a constant gate-to-source voltage or with a constant gate current. The JFETs are used in a direct and reverse conduction. The goal of this study is to determine a gate driver signal that minimizes static losses in the switch in spite of temperature variations. Two switches are tested: the first one is built with one JFET and one diode, the second one is built with four JFETs and one diode. It has been shown that in both cases, when reverse conduction is used, a current controlled gate driver leads to lower static losses.

Published
2012
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