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The amorphous/crystalline phase change behavior of (AGT) electrolyte was investigated. Satisfactory electrolytic resistive switching phenomena were observed in the memory cells composed of amorphous or crystalline AGT films sandwiched between Ag and Pt electrodes. The measured high and low resistance values of amorphous/crystalline cells are distinguishable and in different order of magnitudes. The electrically driven amorphous/crystalline phase change was also demonstrated in the cells sandwiched between two Pt electrodes. It is proposed that by controlling and using the electrolytic resistive switching in amorphous/crystalline cells and the electrically driven amorphous/crystalline phase change of these cells, a new type of four-state memory might be created.

Memory properties of p-Si/ultrathin /metal capacitors have been investigated, in which all the high- dielectric films were derived by atomic layer deposition technique. Using a film as the charge trapping layer, a large memory window of and a high charge trap density of have been achieved. A 53% initial memory window can still be maintained after of retention even after adopting an ultrathin tunneling layer of . The experimental results also demonstrated that adding into films can improve the memory characteristics as compared with the memory capacitors employing pure as the charge trapping layer.

The amorphous/crystalline phase change behavior of Ag10Ge15Te75(AGT) electrolyte was investigated. Satisfactory electrolytic resistive switching phenomena were observed in the memory cells composed of amorphous or crystalline AGT films sandwiched between Ag and Pt electrodes. The measured high and low resistance values of amorphous/crystalline cells are distinguishable and in different order of magnitudes. The electrically driven amorphous/crystalline phase change was also demonstrated in the cells sandwiched between two Pt electrodes. It is proposed that by controlling and using the electrolytic resistive switching in amorphous/crystalline cells and the electrically driven amorphous/crystalline phase change of these cells, a new type of four-state memory might be created.

Memory properties of p-Si/ultrathin Al2O3∕(HfO2)0.8(Al2O3)0.2∕Al2O3/metal capacitors have been investigated, in which all the high-kdielectric films were derived by atomic layer deposition technique. Using a (HfO2)0.8(Al2O3)0.2film as the charge trapping layer, a large memory window of 5.7Vand a high charge trap density of 2.4×1013cm−2have been achieved. A 53% initial memory window can still be maintained after 10yearsof retention even after adopting an ultrathin tunneling Al2O3layer of 2nm. The experimental results also demonstrated that adding Al2O3into HfO2films can improve the memory characteristics as compared with the memory capacitors employing pure HfO2as the charge trapping layer.