22 results on '"YUJEONG SEO"'
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2. High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash.
3. Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories.
4. Countermeasure of Sniffing Attack : Survey
5. Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods
6. Comparative investigation of endurance and bias temperature instability characteristics in metal-Al2O3-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory
7. Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices
8. Current Versus Voltage Characteristics of a Si Based 1-Diode Type Resistive Memory with Cr-SrTiO3Films
9. Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors
10. Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories
11. A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory
12. Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors
13. Differential regulation and synthetic lethality of exclusive RB1 and CDKN2A mutations in lung cancer.
14. Investigation of vertically trapped charge locations in Cr-doped-SrTiO3-based charge trapping memory devices
15. Realization of One-Diode–Type Resistive-Switching Memory with Cr–SrTiO$_{3}$ Film
16. Analysis of electronic carrier traps in Cr-SrTiO3-based charge trap flash memory devices
17. Charge trap flash memory using ferroelectric materials as a blocking layer
18. Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells
19. Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2
20. Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory
21. High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction.
22. Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells.
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