181 results on '"Yu. M. Shernyakov"'
Search Results
2. Optical loss and noise modelling in microdisk lasers with InGaAs quantum well-dots
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A.E. Zhukov, E.I. Moiseev, A.M. Nadtochiy, N.A. Fominykh, K.A. Ivanov, I.S. Makhov, A.S. Dragunova, N.V. Kryzhanovskaya, F.I. Zubov, M.V. Maximov, S.A. Mintairov, Nikolay A. Kalyuzhnyy, Yu. M. Shernyakov, and N. Yu. Gordeev
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- 2022
3. Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots
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A. A. Serin, M. M. Kulagina, G. O. Kornyshov, Nikolay A. Kalyuzhnyy, A. S. Payusov, N. Yu. Gordeev, Mikhail V. Maximov, Alexey E. Zhukov, Alexey M. Nadtochiy, Sergey A. Mintairov, and Yu. M. Shernyakov
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010302 applied physics ,Materials science ,business.industry ,Physics::Optics ,Heterojunction ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,01 natural sciences ,Waveguide (optics) ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Quantum dot ,law ,Excited state ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Ground state ,Lasing threshold ,Quantum well - Abstract
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with increasing optical confinement factor as the cavity length decreases. In a laser with 10 quantum well-dot layers, the lasing-wavelength position remains within the limits of the fundamental optical transition down to the smallest cavity lengths (100 μm). In devices with a single quantum well-dot layer and/or with a low optical confinement factor, lasing directly switches from the ground state to waveguide states omitting excited states below ≤200 μm. Such an effect has not been observed in quantum-well- and quantum-dot lasers and can be attributed to the abnormally low density of excited states in quantum well-dots.
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- 2021
4. Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures
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F. I. Zubov, Yu. M. Shernyakov, Alexey E. Zhukov, Innokenty I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, M. V. Maksimov, A. G. Gladyshev, A. Yu. Egorov, S. S. Rochas, and D. V. Denisov
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010302 applied physics ,Range (particle radiation) ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Phosphorus ,Physics::Optics ,chemistry.chemical_element ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Semiconductor laser theory ,law.invention ,chemistry ,law ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Temperature coefficient ,Quantum well ,Diode - Abstract
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic temperature of threshold current and differential efficiency at temperatures from 16 to ~50°C. These changes are accompanied by an increase in threshold current density and a reduction in differential efficiency.
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- 2019
5. Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges
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A. A. Serin, A. E. Zhukov, S. A. Mintairov, G. O. Kornyshov, N. A. Kalyuzhnyy, A. M. Nadtochiy, A. S. Payusov, V. N. Nevedomsky, Yu. M. Shernyakov, Mikhail V. Maximov, and N. Yu. Gordeev
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010302 applied physics ,Materials science ,Threshold current ,Physics and Astronomy (miscellaneous) ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,law.invention ,Wavelength ,law ,Quantum dot ,0103 physical sciences ,Optoelectronics ,Quantum efficiency ,0210 nano-technology ,business ,Quantum well - Abstract
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and 0.9 cm–1), respectively.
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- 2019
6. Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance
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Yu. A. Guseva, Yu. M. Zadiranov, A. S. Payusov, Ivan Mukhin, Yu. M. Shernyakov, A. A. Serin, M. M. Kulagina, Mikhail V. Maximov, and N. Yu. Gordeev
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010302 applied physics ,Facet (geometry) ,Materials science ,business.industry ,02 engineering and technology ,Semiconductor device ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,01 natural sciences ,Focused ion beam ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Quantum dot ,Etching (microfabrication) ,law ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Diode ,Light-emitting diode - Abstract
A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.
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- 2019
7. Optical gain and high-power operation of edge-emitting lasers based on quantum well-dots
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S. A. Mintairov, A. S. Payusov, A. A. Serin, Alexey E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, Alexey M. Nadtochiy, Mikhail V. Maximov, Nikolay A. Kalyuzhnyy, and G. O. Kornyshov
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Physics ,Condensed Matter::Other ,business.industry ,020208 electrical & electronic engineering ,02 engineering and technology ,Edge (geometry) ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Laser ,01 natural sciences ,law.invention ,Power (physics) ,010309 optics ,Quantum dot ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Density of states ,Optoelectronics ,business ,Ground state ,Quantum ,Quantum well - Abstract
We report on lasers based on InGaAs/GaAs quantum well-dots (QWDs). The density of states in QWDs is unique and different from that of quantum well and quantum dots. Modal gain of QWD ground state transition is as high as 75 cm-1 per layer. Output power of 14.2 W and 50 W in CW and in pulsed modes, respectively were obtained.
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- 2020
8. Optoelectronic devices with active region based on InGaAs/GaAs quantum well dots
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Sergey A. Mintairov, M. M. Kulagina, Nikolay A. Kalyuzhnyy, A. A. Usikova, I. M. Gadzhiev, A. A. Serin, Yu. M. Shernyakov, M. V. Maximov, Alexey E. Zhukov, G. O. Kornyshov, N. Yu. Gordeev, A. S. Payusov, and Alexey M. Nadtochiy
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Materials science ,business.industry ,Laser ,law.invention ,Semiconductor laser theory ,Full width at half maximum ,Quantum dot ,law ,Optical cavity ,Optoelectronics ,Quantum efficiency ,Stimulated emission ,business ,Quantum well - Abstract
We report on broad-area lasers, mode-locked lasers (MLLs), and superluminescent light-emitting diodes (SLDs) based on a recently developed novel type of nanostructures that we refer to as quantum well-dots (QWDs). The QWDs are intermediate in properties between quantum wells and quantum dots and combine some useful properties of both. 1.08 μm InGaAs/GaAs QWDs broad area edge-emitting lasers based on coupled large optical cavity waveguides show high internal quantum efficiency of 92%, low internal loss of 0.9 cm-1 and material gain of ~1.1∙104 cm-1 per one QWD layer. CW output power of 14.2 W is demonstrated at room temperature. Superluminescent light-emitting diodes with one QWD layer in the active region exhibit stimulated emission spectra centered at 1050 nm with the maximal full width at half maximum of 36 nm and the output power of 17 mW. First results on mode-locked operation in QWD lasers are also presented. 2 mm long two-section devices demonstrate the pulse repetition rate of 19.3 GHz and the pulse duration of 3.5 ps. The width of the radio frequency spectrum is 0.2 MHz.
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- 2020
9. Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides
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N. Yu. Gordeev, A. S. Payusov, Mikhail V. Maximov, Yu. M. Shernyakov, A. A. Serin, Alexey E. Zhukov, M. M. Kulagina, Sergey A. Mintairov, and Nikolay A. Kalyuzhnyy
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010302 applied physics ,Materials science ,business.industry ,Thermal resistance ,Condensed Matter Physics ,Laser ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,010309 optics ,Reduction (complexity) ,Transverse plane ,Planar ,law ,Excited state ,0103 physical sciences ,Optoelectronics ,business ,Diode - Abstract
The results of studying edge-emitting quantum-well lasers with a layered design having coupled planar waveguides, capable of suppressing the generation of excited transverse modes, are presented. In this case, a low internal loss (0.4 cm–1) is provided, combined with a small depth (~0.9 μm) of the active region, which results in a low thermal resistance of 6.0 (K/W) mm without a submount.
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- 2018
10. Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
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Alexey E. Zhukov, Mikhail V. Maximov, A. S. Payusov, V. M. Ustinov, A. A. Serin, Alexey M. Nadtochiy, N. Yu. Gordeev, A. P. Vasil’ev, and Yu. M. Shernyakov
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010302 applied physics ,Materials science ,business.industry ,Annealing (metallurgy) ,Superlattice ,Metamorphic rock ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,Laser ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Buffer (optical fiber) ,Electronic, Optical and Magnetic Materials ,law.invention ,Quantum dot ,law ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Current density - Abstract
The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In0.4Ga0.6As/In0.2Ga0.8As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In0.2Ga0.8As/In0.2Al0.3Ga0.5As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm–2, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.
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- 2018
11. InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
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Mikhail V. Maximov, N. Yu. Gordeev, A. S. Payusov, Thibaud Denneulin, V. A. Shchukin, Alexey E. Zhukov, Yu. M. Shernyakov, Nikolay Cherkashin, Alexey M. Nadtochiy, M. M. Kulagina, N. N. Ledentsov, Solar-Terrestrial Centre of Excellence [Brussels] (STCE), Ernst Ruska-Zentrum für Mikroskopie und Spektroskopie mit Elektronen (ER-C), Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association-Helmholtz-Gemeinschaft = Helmholtz Association, Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Ernst Ruska Center for Microscopy and Spectroscopy with Electrons, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
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Materials science ,Physics::Optics ,02 engineering and technology ,Epitaxy ,7. Clean energy ,01 natural sciences ,law.invention ,Semiconductor laser theory ,law ,0103 physical sciences ,Metalorganic vapour phase epitaxy ,ComputingMilieux_MISCELLANEOUS ,Diode ,010302 applied physics ,business.industry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Quantum dot ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,0210 nano-technology ,business ,Current density ,Lasing threshold - Abstract
Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 –xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.
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- 2019
12. Investigation of the Modified Structure of a Quantum Cascade Laser
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A. P. Vasilyev, V. V. Mamutin, M. A. Yagovkina, N. A. Maleev, N. D. Ilyinskaya, V.M. Ustinov, Yu. M. Zadiranov, Yu. M. Shernyakov, and A. A. Usikova
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010302 applied physics ,Plasma etching ,Materials science ,business.industry ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,01 natural sciences ,Waveguide (optics) ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,Cascade ,Etching (microfabrication) ,0103 physical sciences ,Optoelectronics ,Photolithography ,0210 nano-technology ,business ,Quantum cascade laser - Abstract
The process of obtaining a modified structure for quantum cascade lasers is studied; this process includes growth using molecular-beam epitaxy, plasma etching, photolithography with the use of liquid etching, and the formation of special contacts for decreasing losses in the waveguide. The use of a special type of structure makes it possible, even without postgrowth overgrowth with a high-resistivity material, to attain parameters satisfying requirements to heterostructures in high-quality quantum cascade lasers at maximal simplification of the entire preparation process.
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- 2018
13. Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots
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S. A. Mintairov, A. S. Payusov, M. M. Kulagina, Yu. M. Shernyakov, F. I. Zubov, G. O. Kornyshov, N. A. Kalyuzhnyi, Mikhail V. Maximov, N. V. Kryzhanovskaya, A. E. Zhukov, and Eduard Moiseev
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010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Ingaas gaas ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,law.invention ,Quantum dot ,law ,Etching (microfabrication) ,0103 physical sciences ,Optoelectronics ,Current (fluid) ,0210 nano-technology ,business ,Layer (electronics) ,Quantum ,Quantum well - Abstract
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.
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- 2019
14. Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region
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N. Yu. Gordeev, Yu. M. Shernyakov, S. A. Mintairov, A. A. Serin, M. V. Maksimov, N. A. Kalyuzhnyi, M. M. Kulagina, A. S. Payusov, and A. E. Zhukov
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010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,02 engineering and technology ,Atmospheric temperature range ,Laser ,01 natural sciences ,Power (physics) ,law.invention ,Crystal ,020210 optoelectronics & photonics ,Planar ,Optics ,law ,Excited state ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Divergence (statistics) ,business ,Beam divergence - Abstract
Results are presented of a study of light–current characteristics and far-field patterns of emission of stripe lasers with coupled planar waveguides. This configuration makes it possible to suppress the generation of excited modes and to have a small (about 0.9 μm) depth of the active region from the surface of the laser crystal. A high-temperature stability of the angular emission divergence (34.0° ± 1.5°) in the temperature range 20–80°C is demonstrated. The largest value of the output power is limited to 12.2 W in the continuous-wave mode by the catastrophic mirror damage.
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- 2018
15. Room temperature yellow InGaAlP quantum dot laser
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Thibaud Denneulin, L. Ya. Karachinsky, Yu. M. Shernyakov, Nikolay Cherkashin, M. M. Kulagina, V. A. Shchukin, A. S. Payusov, Alexey E. Zhukov, M. V. Maximov, N. Yu. Gordeev, N. N. Ledentsov, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
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Materials science ,Active laser medium ,Superlattice ,02 engineering and technology ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,Materials Chemistry ,Stimulated emission ,Electrical and Electronic Engineering ,ComputingMilieux_MISCELLANEOUS ,Diode ,010302 applied physics ,business.industry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,Electronic, Optical and Magnetic Materials ,Quantum dot ,Quantum dot laser ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,0210 nano-technology ,business ,Lasing threshold - Abstract
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and experimental results on injection lasing in the green–orange spectral range (558–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations were strongly tilted towards the [1 1 1]A direction with respect to the (1 0 0) plane. Four sheets of GaP–rich quantum barrier insertions were applied to suppress the leakage of non–equilibrium electrons from the gain medium. Two types of the gain medium were applied. In one case 4–fold stacked tensile–strained (In,Ga)P insertions were used. Experimental data shows that self–organized vertically–correlated quantum dots (QDs) are formed on (2 1 1)A– and (3 2 2)A–oriented substrates, while corrugated quantum wires are formed on the (8 1 1)A surface. In the other case a short–period superlattice (SPSL) composed of 16–fold stacked quasi–lattice–matched 1.4 nm–thick In0.5Ga0.5P layers separated by 4 nm–thick (Al0.6Ga0.4)0.5In0.5P layers was applied. Laser diodes with 4–fold stacked QDs having a threshold current densities of ∼7–10 kA/cm2 at room temperature were realized for both (2 1 1)A and (3 2 2)A surface orientations at cavity lengths of ∼1 mm. Emission wavelength at room temperature was ∼599–603 nm. Threshold current density for the stimulated emission was as low as ∼1 kA/cm2. For (8 1 1)A–grown structures no room temperature lasing was observed. SPSL structures demonstrated lasing only at low temperatures
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- 2019
16. Gain spectra of lasers based on transitional dimension active region
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A. A. Serin, A. E. Zhukov, Sergey A. Mintairov, N. Yu. Gordeev, Yu. M. Shernyakov, Nikolay A. Kalyuzhnyy, Mikhail V. Maximov, A. S. Payusov, and G. O. Kornyshov
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History ,Materials science ,Optics ,Dimension (vector space) ,business.industry ,law ,business ,Laser ,Spectral line ,Computer Science Applications ,Education ,law.invention - Abstract
We present an experimental study of the optical gain of edge-emitting lasers based on a new type of quantum-sized InGaAs active medium grown on GaAs substrates, which we refer to as quantum-well-dots (QWDs). It is shown that the single layer QWD active region provide at least 33 cm−1 optical gain at 1030 nm comparable to the values typical for InGaAs quantum wells (QWs), and the width of the gain spectra characteristic for InAs quantum dots (QDs). Thus, QWD active region combines the advantages of both QW and QD heterostructures and has a great potential for improving characteristics of various semiconductor devices.
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- 2020
17. 1.55 µm range edge-emitting laser diodes based on InGaAs/InGaAlAs superlattice and InGaAs quantum wells
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L. Ya. Karachinsky, A. Yu. Egorov, Yu. K. Bobretsova, A. G. Gladyshev, A. V. Babichev, A. A. Klimov, Innokenty I. Novikov, S. S. Rochas, E. S. Kolodeznyi, Alexey E. Zhukov, and Yu. M. Shernyakov
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History ,Range (particle radiation) ,Materials science ,business.industry ,Superlattice ,Edge (geometry) ,Laser ,Computer Science Applications ,Education ,law.invention ,law ,Optoelectronics ,business ,Quantum well ,Diode - Abstract
Two laser heterostructures with active region based on seven InGaAs quantum wells and on InGaAs/InGaAlAs superlattice were grown on InP substrates by molecular beam epitaxy. Both active regions were designed for vertical-cavity surface-emitting lasers of 1535-1565 nm spectral range and had total thickness about 80-90 nm. Characteristics of edge-emitting laser diodes fabricated from grown laser heterostructures were studied and compared.
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- 2020
18. On the gain properties of 'thin' elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
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A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, Innokenty I. Novikov, I. M. Gadzhiev, A. V. Savelyev, Vladislav E. Bougrov, I. A. Nyapshaev, Yu. M. Zadiranov, A. A. Usikova, A. Yu. Egorov, E. S. Kolodeznyi, M. S. Buyalo, Yu. M. Shernyakov, and L. Ya. Karachinsky
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010302 applied physics ,Materials science ,business.industry ,Infrared ,Near-infrared spectroscopy ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,01 natural sciences ,Electromagnetic radiation ,Atomic and Molecular Physics, and Optics ,Spectral line ,Electronic, Optical and Magnetic Materials ,law.invention ,Optics ,law ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Current density ,Quantum well ,Diode - Abstract
The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm–1 and a low transparency current density of 46 A/cm2 per quantum well.
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- 2016
19. Modification of InGaAs/GaAs heterostructure density of states and optical gain using hybrid quantum well-dots
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M. M. Kulagina, V.N. Nevedomskiy, Alexey M. Nadtochiy, Sergey A. Mintairov, M. V. Maximov, N. Y. Gordeev, Yu. M. Shernyakov, A. S. Payusov, Nikolay A. Kalyuzhnyy, and Alexey E. Zhukov
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Materials science ,Physics and Astronomy (miscellaneous) ,Condensed Matter::Other ,business.industry ,Physics::Optics ,Heterojunction ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Laser ,01 natural sciences ,Semiconductor laser theory ,law.invention ,010309 optics ,Quantum dot ,law ,0103 physical sciences ,Density of states ,Optoelectronics ,010306 general physics ,business ,Instrumentation ,Quantum ,Lasing threshold ,Quantum well - Abstract
We show that the density of states and gain spectra of InGaAs/GaAs quantum well-dot (QWD) hybrid nanostructures qualitatively differ from that of quantum wells (QWs) and quantum dots. In QWDs, the density of states does not increase to higher energies and ground-state lasing is maintained up to shorter cavities (higher output loss) as compared to QW lasers emitting in the same optical range. The QWD lasers show lower threshold current densities and better temperature stability than the QW ones.
- Published
- 2020
20. Experimental study of power-limiting factors of 1.1 μm range edge-emitting lasers based on InGaAs/GaAs quantum well-dot nanostructures
- Author
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G. O. Kornyshov, Mikhail V. Maximov, A. E. Zhukov, S. A. Mintairov, Yu. M. Shernyakov, N. Yu. Gordeev, N. A. Kalyuzhnyy, M. M. Kulagina, A. S. Payusov, and A. A. Serin
- Subjects
History ,Range (particle radiation) ,Materials science ,Nanostructure ,Ingaas gaas ,business.industry ,Limiting ,Edge (geometry) ,Laser ,Computer Science Applications ,Education ,law.invention ,Power (physics) ,law ,Optoelectronics ,business ,Quantum well - Abstract
We present a study of high-power characteristics of edge-emitting lasers based on quantum well-dots (QWD) in a pulsed regime. QWD-based lasers with 2 and 5 active layers emitting at ∼1.1 μm provided maximal optical power of 39 W limited by the pulse current source available. We have investigated the lasing spectra and shown that under the injection current above 20 kA/cm2 the active region overheats approximately by 0.5°C per 1 kA/cm2 during 100 ns current pulse. The active region overheating correlates well with the reducing of the differential efficiency of our devices. We believe that maximal pulse optical power of the QWD-based lasers is limited mainly by our laser wafer design rather than by the QWD active media properties.
- Published
- 2019
21. Transverse mode switching in quantum well-dot lasers triggered by gain saturation
- Author
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A. A. Kharchenko, A. S. Payusov, A. E. Zhukov, N. A. Kalyuzhnyy, A. A. Serin, Mikhail V. Maximov, G. O. Kornyshov, Yu. M. Shernyakov, S. A. Mintairov, and N. Yu. Gordeev
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History ,Materials science ,law ,Physics::Optics ,Atomic physics ,Laser ,Saturation (magnetic) ,Quantum well ,Computer Science Applications ,Education ,Transverse mode ,law.invention - Abstract
Having investigated narrow-ridge lasers based on a single layer of InGaAs quantum well-dots emitting at the wavelength of 1.06 μm we have shown anomalous transverse multimode lasing not observed in the broad-area lasers. The effect is shown to be caused by the wavelength shift triggered by the ground state gain saturation.
- Published
- 2019
22. Temperature performance of InGaAs/InGaAlAsTemperature performance of InGaAs/InGaAlAs laser diodes with δ-doping active region
- Author
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Mikhail V. Maximov, A. Yu. Egorov, F. I. Zubov, D. V. Denisov, S. S. Rochas, A. E. Zhukov, L. Ya. Karachinsky, Innokenty I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, and Yu. M. Shernyakov
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History ,Materials science ,law ,business.industry ,Doping ,Optoelectronics ,Laser ,business ,Computer Science Applications ,Education ,law.invention ,Diode - Abstract
The optical gain performance of 1530-1565 nm laser diodes with active regions containing p-doped barrier layers has been investigated. We have studied the threshold current density and differential quantum efficiency in wide temperature range and compared modal gain behaviour of laser diodes made of heterostructure with delta-doped barrier layers by carbon at level of 1012 cm-2 and heterostructure with undoped barrier layers.
- Published
- 2019
23. High-power 0.98 µm range diode lasers based on InGaAs/GaAs quantum well-dot active region
- Author
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N. A. Kalyuzhnyy, A. E. Zhukov, A. S. Payusov, N. Yu. Gordeev, G. O. Kornyshov, Mikhail V. Maximov, A. A. Serin, S. A. Mintairov, Yu. M. Shernyakov, and Alexey M. Nadtochiy
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History ,Range (particle radiation) ,Materials science ,Ingaas gaas ,business.industry ,Laser ,Computer Science Applications ,Education ,Power (physics) ,law.invention ,law ,Optoelectronics ,business ,Quantum well ,Diode - Abstract
We present a study of characteristics of the edge-emitting lasers operating in the 0.98 μm wavelength range and based on a new type of InGaAs/GaAs active region – quantum well-dots (QWD). Utilizing the QWD active region in broadened 1.3 μm waveguide (BWG) allowed us to decrease the internal loss down to 0.5 cm−1 and to demonstrate the maximum output power of 13W and 50W in continuous wave (CW) and pulse operation regimes respectively. The investigation of the lasing spectra under high pulse injection currents revealed the overheating of the active region in the devices with moderate waveguide thickness (0.68 μm) in contrast with BWG devices.
- Published
- 2019
24. Resonance inhibiting of high-order lateral modes infew-stripe diode lasers
- Author
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Alexey E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, A. A. Serin, A. S. Payusov, M. M. Kulagina, and Mikhail V. Maximov
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Waveguide lasers ,Materials science ,business.industry ,Resonance ,Optical refraction ,Laser ,law.invention ,Optical pumping ,law ,Condensed Matter::Superconductivity ,Optoelectronics ,High order ,business ,Quantum tunnelling ,Diode - Abstract
We present our novel approach for promoting lateral single-mode operation in the edge-emitting lasers having broadened multi-mode stripe. The idea is based on the resonant optical tunneling of the high-order modes into the nearby passive stripes. Numerical and preliminary experimental results are discussed.
- Published
- 2018
25. High-performance diode lasers based on coupledlarge-optical-cavity design
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Nikolay A. Kalyuzhnyy, Alexey E. Zhukov, Sergey A. Mintairov, M. M. Kulagina, A. A. Serin, A. S. Payusov, Yu. M. Shernyakov, N. Yu. Gordeev, and Mikhail V. Maximov
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Waveguide lasers ,Materials science ,business.industry ,Thermal resistance ,Physics::Optics ,Laser ,Optical coupling ,law.invention ,Transverse mode ,law ,Optical cavity ,Thermal ,Optoelectronics ,business ,Diode - Abstract
We discuss how to significantly reduce internal optical losses, thermal and electrical resistances in laser diodes via applying our novel approach for transverse mode engineering. The obtained experimental results make the concept promising for high-power lasers.
- Published
- 2018
26. Edge-emitting and microdisk lasers based on hybrid quantum-well-dot structures
- Author
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N. V. Kryzhanovskaya, Alexey E. Zhukov, E. I. Moiseev, A. S. Payusov, Nikolay A. Kalyuzhnyy, N. Yu. Gordeev, M. M. Kulagina, Sergey A. Mintairov, Yu. M. Shernyakov, Mikhail V. Maximov, and Alexey M. Nadtochiy
- Subjects
Nanostructure ,Materials science ,Physics::Optics ,02 engineering and technology ,Edge (geometry) ,01 natural sciences ,law.invention ,chemistry.chemical_compound ,law ,0103 physical sciences ,Physics::Atomic Physics ,Quantum ,Quantum well ,Condensed Matter::Quantum Gases ,010302 applied physics ,Condensed Matter::Other ,business.industry ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Laser ,chemistry ,Quantum dot laser ,Quantum dot ,Optoelectronics ,0210 nano-technology ,business ,Indium gallium arsenide - Abstract
We studied edge-emitting and microdisk lasers based on a novel type of the laser active region, quantum well-dot hybrid nanostructures, which possess advantages of both quantum wells and quantum dots.
- Published
- 2018
27. Influence of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss
- Author
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V. V. Korenev, A. E. Zhukov, F. I. Zubov, Mikhail V. Maximov, A. V. Savelyev, and Yu. M. Shernyakov
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010302 applied physics ,Materials science ,Multi state ,business.industry ,Doping ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Modulation ,Quantum dot laser ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Lasing threshold - Published
- 2018
28. Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates
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V. A. Shchukin, Alexey E. Zhukov, N. N. Ledentsov, Nikolay Cherkashin, M. M. Kulagina, Mikhail V. Maximov, N. Yu. Gordeev, A. S. Payusov, Thibaud Denneulin, Yu. M. Shernyakov, Solar-Terrestrial Centre of Excellence [Brussels] ( STCE ), Matériaux et dispositifs pour l'Electronique et le Magnétisme ( CEMES-MEM ), Centre d'élaboration de matériaux et d'études structurales ( CEMES ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ) -Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Paul Sabatier - Toulouse 3 ( UPS ) -Centre National de la Recherche Scientifique ( CNRS ), Solar-Terrestrial Centre of Excellence [Brussels] (STCE), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
OCIS codes: (140.0140) Lasers and laser optics ,(140.5960) Semiconductor lasers ,(140.7300) Visible lasers ,(120.4120) Moiré techniques ,(090.2880) Holographic interferometry ,(140.6810) Thermal effects ,(160.3380) Laser materials ,Materials science ,Active laser medium ,[ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,02 engineering and technology ,Epitaxy ,01 natural sciences ,law.invention ,010309 optics ,Optics ,law ,0103 physical sciences ,Wafer ,ddc:530 ,Leakage (electronics) ,Diode ,business.industry ,021001 nanoscience & nanotechnology ,Laser ,Atomic and Molecular Physics, and Optics ,Wavelength ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,0210 nano-technology ,business ,Lasing threshold - Abstract
International audience; We report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (Al x Ga 1–x) 0.5 In 0.5 P–GaAs diodes with 4 layers of tensile-strained In y Ga 1–y P quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm 2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature.
- Published
- 2018
29. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers
- Author
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A. E. Zhukov, Mikhail V. Maximov, N. A. Kalyuzhnyy, A. S. Payusov, S. Rouvimov, S. A. Mintairov, A. M. Nadtochiy, and Yu. M. Shernyakov
- Subjects
education.field_of_study ,Materials science ,Photoluminescence ,Condensed Matter::Other ,business.industry ,Population ,Physics::Optics ,Heterojunction ,Atmospheric temperature range ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Condensed Matter::Materials Science ,Quantum dot ,law ,Optoelectronics ,Emission spectrum ,business ,education ,Vicinal - Abstract
Heterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10-400 K. The structural properties of QDs are examined by transmission electron microscopy. Analysis of the PL spectra demonstrates the bimodality of the QD array, which leads to an unusual temperature behavior of the PL spectra and threshold current density. A model of the population of a bimodal QD array by carriers, describing the observed phenomena, is considered.
- Published
- 2015
30. Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates
- Author
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Mikhail V. Maximov, Nikolay Cherkashin, V. A. Shchukin, M. M. Kulagina, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, N. N. Ledentsov, Schefenacker Vision Systems GmbH, Schwaikheim, A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS]Physics [physics] ,Materials science ,Laser diode ,business.industry ,Physics::Optics ,02 engineering and technology ,Laser ,7. Clean energy ,Semiconductor laser theory ,law.invention ,Gallium arsenide ,Full width at half maximum ,chemistry.chemical_compound ,Condensed Matter::Materials Science ,020210 optoelectronics & photonics ,chemistry ,law ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,business ,Lasing threshold ,Beam divergence ,Diode - Abstract
International audience; Low threshold current density (
- Published
- 2017
31. Transverse mode competition in narrow-ridge diode lasers
- Author
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N. Yu. Gordeev, M. M. Kulagina, N. A. Kalyuzhnyy, A. S. Payusov, A. A. Serin, M. V. Maximov, Alexey E. Zhukov, Yu. M. Shernyakov, S. N. Gordeev, and S. A. Mintairov
- Subjects
Materials science ,business.industry ,Condensed Matter Physics ,Laser ,Industrial and Manufacturing Engineering ,Atomic and Molecular Physics, and Optics ,Semiconductor laser theory ,law.invention ,Transverse mode ,Optics ,law ,Ridge (meteorology) ,business ,Instrumentation ,Diode - Published
- 2019
32. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
- Author
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A. M. Nadtochiy, A. S. Payusov, Yu. M. Shernyakov, A. V. Savelyev, D.A. Livshits, Mikhail V. Maximov, N. Yu. Gordeev, N. V. Kryzhanovskaya, A. E. Zhukov, and F. I. Zubov
- Subjects
Amplified spontaneous emission ,Range (particle radiation) ,Materials science ,Condensed Matter::Other ,business.industry ,Physics::Optics ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Spectral line ,Electronic, Optical and Magnetic Materials ,law.invention ,Condensed Matter::Materials Science ,Laser linewidth ,Quantum dot ,Quantum dot laser ,law ,Optoelectronics ,Spectral analysis ,business - Abstract
The spectral analysis of amplified spontaneous emission is used to determine the linewidth enhancement factor (α-factor) in lasers based on InAs/InGaAs quantum dots (QDs) in a wide spectral range near the ground-state optical transition energy. The effect of the pump current and number of QDs on the spectral dependences of the α-factor is examined. The temperature dependence of the spectra of the α-factor is experimentally determined for the first time for lasers with InAs/InGaAs QDs. An explanation is suggested for the observed anomalous decrease in the α-factor with increasing temperature.
- Published
- 2013
33. Edge-emitting lasers based on transitionally dimensional InGaAs/GaAs active region
- Author
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N. A. Kalyuzhnyy, M. M. Kulagina, A. A. Serin, A. S. Payusov, Alexey M. Nadtochiy, Yu. M. Shernyakov, N. Yu. Gordeev, S. A. Mintairov, A. E. Zhukov, and Mikhail V. Maximov
- Subjects
010302 applied physics ,History ,Materials science ,business.industry ,Ingaas gaas ,02 engineering and technology ,Edge (geometry) ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Computer Science Applications ,Education ,law.invention ,law ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business - Published
- 2018
34. Effect of carrier localization on performance of coupled large optical cavity diode lasers
- Author
-
Mikhail V. Maximov, N. A. Kalyuzhnyy, F. I. Zubov, Yu. M. Shernyakov, A. A. Serin, N. Yu. Gordeev, A. E. Zhukov, A. S. Payusov, and S. A. Mintairov
- Subjects
History ,Materials science ,business.industry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,Computer Science Applications ,Education ,law.invention ,020210 optoelectronics & photonics ,law ,Optical cavity ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,0210 nano-technology ,business ,Diode - Published
- 2018
35. Reducing of thermal resistance of edge-emitting lasers based on coupled waveguides
- Author
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Sergey A. Mintairov, A. S. Payusov, A. A. Serin, Alexey E. Zhukov, Yu. M. Shernyakov, Nikolay A. Kalyuzhnyy, N. Yu. Gordeev, and Mikhail V. Maximov
- Subjects
History ,Materials science ,business.industry ,Thermal resistance ,02 engineering and technology ,Edge (geometry) ,Laser ,01 natural sciences ,Computer Science Applications ,Education ,law.invention ,010309 optics ,020210 optoelectronics & photonics ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,business - Published
- 2018
36. Injection microdisk lasers based on multilayers of InGaAs/GaAs quantum well-dot structures
- Author
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N. V. Kryzhanovskaya, K. P. Kotlyar, S A Scherbak, Mikhail V. Maximov, Yu. M. Shernyakov, Eduard Moiseev, Alexey E. Zhukov, and Yu. A. Guseva
- Subjects
History ,Threshold current ,Materials science ,business.industry ,Ingaas gaas ,Physics::Optics ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Laser ,Computer Science Applications ,Education ,Characterization (materials science) ,law.invention ,law ,Lasing wavelength ,Optoelectronics ,Continuous wave ,business ,Quantum ,Quantum well - Abstract
We report results of characterization of injection microdisk lasers based on active layers employing 2, 5 and 10 layers of InGaAs quantum well-dot structures. The microlasers operate in continuous wave regime at room temperature without external cooling. The minimal microdisk diameter 10 µm is obtained for 5 layers of InGaAs quantum well-dot structures. Lasing wavelength is around 1.1...1.15 µm, minimal threshold current is 1.6 mA (threshold current density 900 A/cm2).
- Published
- 2018
37. Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers
- Author
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Levon V. Asryan, N. V. Kryzhanovskaya, Alexey E. Zhukov, Yu. M. Shernyakov, Kresten Yvind, F. I. Zubov, Mikhail V. Maximov, and Elizaveta Semenova
- Subjects
Materials science ,business.industry ,Laser ,law.invention ,Gallium arsenide ,chemistry.chemical_compound ,Optics ,chemistry ,law ,hemic and lymphatic diseases ,Optoelectronics ,Spontaneous emission ,Quantum well laser ,Electrical and Electronic Engineering ,Current (fluid) ,business ,Current density ,Lasing threshold ,Quantum well - Abstract
An AlGaAs/GaAs quantum well (QW) laser is fabricated with GaInP and AlGaInAs asymmetric barrier layers (ABLs) and its light–current characteristic (LCC) is compared with that of a reference conventional QW laser without ABLs. It was found that the use of the ABLs suppresses the sublinearity of the LCC at high current densities. As a result, the maximum lasing power of 9.2 W, being limited by catastrophic optical mirror damage, is achieved at a considerably lower operating current in the laser with ABLs as compared to the reference laser (12.5 against 20.2 A). The ABL effect is associated with the suppression of the parasitic recombination in the optical confinement layer, as confirmed by a decrease of the intensity of the spontaneous emission from the layer.
- Published
- 2015
38. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
- Author
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Mikhail V. Maximov, A. E. Zhukov, A. V. Savelyev, A. S. Payusov, F. I. Zubov, A. M. Nadtochiy, V. V. Korenev, N. V. Kryzhanovskaya, N. Yu. Gordeev, and Yu. M. Shernyakov
- Subjects
Materials science ,Laser diode ,business.industry ,Physics::Optics ,Laser pumping ,Injection seeder ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Optics ,law ,Quantum dot laser ,Optical cavity ,business ,Quantum well ,Tunable laser - Abstract
Heat dissipation under the high-speed modulation of quantum dot edge-emitting lasers is considered. It is shown that, for a given laser diode, there is a bias current at which the heat-to-bitrate ratio is minimized. Moreover, there exists a certain optimal optical loss of the laser cavity at which the lowest heat-to-bitrate ratio is provided for any design of edge-emitting lasers that can be fabricated from an epitaxial structure. The heat-to-bitrate ratio and the corresponding bitrate are numerically calculated and analytical expressions are derived. It is demonstrated that the heat-to-bitrate ratio of quantum dot edge-emitting lasers can be less than 0.4 pJ/bit at a bitrate exceeding 10 Gbit/s.
- Published
- 2013
39. Novel approach for transverse mode engineering in edge-emitting semiconductor lasers
- Author
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Alexey E. Zhukov, A. S. Payusov, M. M. Kulagina, Nikolay A. Kalyuzhnyy, Yu. M. Shernyakov, Sergey A. Mintairov, N. Yu. Gordeev, and Mikhail V. Maximov
- Subjects
Optical amplifier ,Materials science ,business.industry ,Physics::Optics ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,Waveguide (optics) ,law.invention ,Semiconductor laser theory ,Transverse mode ,010309 optics ,Optics ,law ,Optical cavity ,0103 physical sciences ,Optoelectronics ,Semiconductor optical gain ,Physics::Atomic Physics ,0210 nano-technology ,business ,Tunable laser - Abstract
We review our novel approach based on coupled large optical cavity (CLOC) structures for effective suppression of high-order transverse modes in edge-emitting lasers with broadened waveguides. We discuss the main principles of the CLOC laser concept and present our recent numerical and experimental results of the laser operation.
- Published
- 2016
40. Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes
- Author
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Yu. M. Shernyakov, N. A. Kaluzhniy, V. A. Shchukin, N. Y. Gordeev, A. S. Payusov, N. N. Ledentsov, Mikhail V. Maximov, and S. A. Mintairov
- Subjects
Distributed feedback laser ,Materials science ,business.industry ,Physics::Optics ,02 engineering and technology ,Pulsed power ,Laser ,01 natural sciences ,law.invention ,Semiconductor laser theory ,010309 optics ,Full width at half maximum ,020210 optoelectronics & photonics ,Optics ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,Laser power scaling ,business ,Waveguide ,Diode - Abstract
Tilted Wave Lasers (TWLs) based on optically coupled thin active waveguide and thick passive waveguide offer an ultimate solution for thick–waveguide diode laser, preventing catastrophic optical mirror damage and thermal smile in laser bars, providing robust operation in external cavity modules thus enabling wavelength division multiplexing and further increase in brightness enabling direct applications of laser diodes in the mainstream material processing. We show that by proper engineering of the waveguide one can realize high performance laser diodes at different tilt angles of the vertical lobes. Two vertical lobes directed at various angles (namely, +/–27° or +/–9°) to the junction plane are experimentally realized by adjusting the compositions and the thicknesses of the active and the passive waveguide sections. The vertical far field of a TWL with the two +/–9° vertical beams allows above 95% of all the power to be concentrated within a vertical angle below 25°, the fact which is important for laser stack applications using conventional optical coupling schemes. The full width at half maximum of each beam of the value of 1.7° evidences diffraction– limited operation. The broad area (50 μm) TWL chips at the cavity length of 1.5 mm reveal a high differential efficiency ~90% and a current–source limited pulsed power >42W for as–cleaved TWL device. Thus the power per facet length in a laser bar in excess of 8.4 kW/cm can be realized. Further, an ultimate solution for the smallest tilt angle is that where the two vertical lobes merge forming a single lobe directed at the zero angle is proposed.
- Published
- 2016
41. Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers
- Author
-
N. V. Kryzhanovskaya, A. V. Savelyev, A. E. Zhukov, Yu. M. Shernyakov, A. A. Krasivichev, Mikhail V. Maximov, F. I. Zubov, and E. M. Arakcheeva
- Subjects
Condensed matter physics ,Chemistry ,Physics::Optics ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Laser linewidth ,law ,Quantum dot ,Quantum dot laser ,Excited state ,Atomic physics ,Absorption (electromagnetic radiation) ,Refractive index ,Lasing threshold - Abstract
An analytical expression is derived for the linewidth enhancement factor of a quantum-dot laser, which makes it possible to describe its dependence on optical loss and photon density in an explicit form. The model accounts for refractive index variations at the ground-state optical transition due to gain/absorption variations upon the first excited-state transition in quantum dots. It is shown that a decrease in optical loss, an increase in saturated gain, and an increase in the energy separation between the excited-state and ground-state transitions results in a decrease in the α factor both at and above the lasing threshold.
- Published
- 2012
42. Features of simultaneous ground- and excited-state lasing in quantum dot lasers
- Author
-
V. V. Klimenko, D.A. Livshits, A. E. Zhukov, A. V. Savelyev, Yu. M. Shernyakov, Mikhail V. Maximov, and F. I. Zubov
- Subjects
Materials science ,Physics::Optics ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Gain-switching ,Quantum dot ,Quantum dot laser ,Excited state ,Spontaneous emission ,Emission spectrum ,Atomic physics ,Homogeneous broadening ,Lasing threshold - Abstract
The lasing spectra and light-current (L-I) characteristics of an InAs/InGaAs quantum dot laser emitting in the simultaneous lasing mode at the ground- and excited-state optical transitions are studied. Lasing and spontaneous emission spectra are compared. It is shown that ground-state quenching of lasing is observed even in the absence of active region self-heating or an increase in homogeneous broadening with growth in the current density. It is found that the intensities of both lasing and spontaneous emission at the ground-state transition begin to decrease at a pump intensity that significantly exceeds the two-level lasing threshold. It is also found that different groups of quantum dots are involved in ground- and excited-state lasing.
- Published
- 2012
43. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes
- Author
-
A. S. Payusov, A. E. Zhukov, A. M. Kuznetsov, Innokenty I. Novikov, A. V. Chunareva, N. Yu. Gordeev, Yu. M. Shernyakov, A. R. Kovsh, D.A. Livshits, and Mikhail V. Maximov
- Subjects
Diffraction ,Materials science ,business.industry ,Physics::Optics ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Semiconductor laser theory ,Condensed Matter::Materials Science ,Optics ,Quantum dot laser ,law ,Quantum dot ,Optoelectronics ,business ,Optical filter ,Lasing threshold ,Diode - Abstract
The concept of a diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-μm wavelength range grown on GaAs substrates. Incorporation of such a filter made it possible to increase the width of the stripe and obtain an output power as high as 700 mW with retention of a single-spatial-mode character of lasing.
- Published
- 2010
44. Virtual cavity in distributed Bragg reflectors
- Author
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N. N. Ledentsov, M. M. Kulagina, Yu. M. Shernyakov, Mikhail V. Maximov, V. A. Shchukin, J.-R. Kropp, A. Yu. Egorov, Alexey E. Zhukov, F. I. Zubov, M. Agustin, A. S. Payusov, N. Yu. Gordeev, and Vladimir Kalosha
- Subjects
Optical amplifier ,Materials science ,Active laser medium ,Laser diode ,business.industry ,Physics::Optics ,02 engineering and technology ,Laser ,Distributed Bragg reflector ,Atomic and Molecular Physics, and Optics ,law.invention ,Vertical-cavity surface-emitting laser ,Resonator ,020210 optoelectronics & photonics ,Optics ,law ,0202 electrical engineering, electronic engineering, information engineering ,business ,Quantum well - Abstract
We show theoretically and experimentally that distributed Bragg reflector (DBR) supports a surface electromagnetic wave exhibiting evanescent decay in the air and oscillatory decay in the DBR. The wave exists in TM polarization only. The field extension in the air may reach several wavelengths of light. Once gain medium is introduced into the DBR a novel class of diode lasers, semiconductor optical amplifiers, light-emitting diodes, etc. can be developed allowing a new type of in-plane or near-field light outcoupling. To improve the wavelength stability of the laser diode, a resonant cavity structure can be coupled to the DBR, allowing a coupled state of the cavity mode and the near-field mode. A GaAlAs-based epitaxial structure of a vertical-cavity surface-emitting laser (VCSEL) having an antiwaveguiding cavity and multiple GaInAs quantum wells as an active region was grown and processed as an in–plane Fabry-Perot resonator with cleaved facets. Windows in the top stripe contact were made to facilitate monitoring of the optical modes. Three types of the optical modes were observed in electroluminescence (EL) studies under high current densities > 1 kA/cm2. Mode A with the longest wavelength is a VCSEL–like mode emitting normal to the surface. Mode B has a shorter wavelength, emitting light at two symmetric lobes tilted with respect to the normal to the surface in the direction parallel to the stripe. Mode C has the shortest wavelength and shifts with a temperature at a rate 0.06 nm/K. Polarization studies reveal predominantly TE emission for modes A and B and purely TM for mode C in agreement with the theory. Spectral position, thermal shift and polarization of mode C confirm it to be a coupled state of the cavity mode and near-field DBR surface-trapped mode.
- Published
- 2018
45. Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers
- Author
-
Innokenty I. Novikov, Yu. M. Shernyakov, A. V. Savelyev, Mikhail V. Maximov, and A. E. Zhukov
- Subjects
Condensed matter physics ,Chemistry ,Physics::Optics ,Atmospheric temperature range ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Laser ,Atomic and Molecular Physics, and Optics ,Spectral line ,Electronic, Optical and Magnetic Materials ,Power (physics) ,law.invention ,law ,Quantum dot ,Quantum dot laser ,Saturation (magnetic) ,Lasing threshold - Abstract
Dependences of the lasing spectrum’s width of lasers based on arrays of self-organized InAs/InGaAs quantum dots on the temperature and output power have been experimentally studied. A theoretical analysis and simulation of the experimental results have been performed and the possibility of an adequate analytical description of the power and temperature dependences of the lasing line width in terms of the model developed has been demonstrated. It is shown that the main cause of the broadening of the lasing spectrum at low temperatures is the gain saturation in quantum dots as a result of the increase in the average carrier’s escape and capture times.
- Published
- 2009
46. The effect ofp-doping on multi-state lasing in InAs/InGaAs quantum dot lasers for different cavity lengths
- Author
-
V. V. Korenev, A. V. Savelyev, Yu. M. Shernyakov, A. E. Zhukov, Mikhail V. Maximov, and F. I. Zubov
- Subjects
010302 applied physics ,History ,Materials science ,Multi state ,business.industry ,Doping ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Computer Science Applications ,Education ,Quantum dot laser ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Lasing threshold - Published
- 2017
47. Investigation of lasers based on coupled waveguides by near-field scanning optical microscopy
- Author
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N. Yu. Gordeev, Yu. S. Polubavkina, A. S. Payusov, Yu. M. Shernyakov, N. A. Kalyuzhnyy, M. M. Kulagina, N. V. Kryzhanovskaya, S. A. Mintairov, A. E. Zhukov, Mikhail V. Maximov, F. I. Zubov, and Eduard Moiseev
- Subjects
History ,Materials science ,business.industry ,law ,Optoelectronics ,Near-field scanning optical microscope ,business ,Laser ,Vibrational analysis with scanning probe microscopy ,Computer Science Applications ,Education ,law.invention - Published
- 2017
48. Lateral mode control in edge-emitting lasers with modified mirrors
- Author
-
Yu. M. Zadiranov, Ivan Mukhin, A. Serin, M. V. Maximov, N. Y. Gordeev, A. S. Payusov, and Yu. M. Shernyakov
- Subjects
History ,Materials science ,business.industry ,law ,Optoelectronics ,Mode control ,Edge (geometry) ,business ,Laser ,Tunable laser ,Computer Science Applications ,Education ,law.invention - Published
- 2017
49. Edge-emitting lasers based on coupled large optical cavity with high beam stability
- Author
-
M. V. Maximov, A. Serin, N. Y. Gordeev, Sergey A. Mintairov, y. Kalyuzhnyy, A. S. Payusov, and Yu. M. Shernyakov
- Subjects
History ,Materials science ,business.industry ,Edge (geometry) ,Laser ,Stability (probability) ,Computer Science Applications ,Education ,law.invention ,Optics ,law ,Optical cavity ,business ,Beam (structure) - Published
- 2017
50. Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K)
- Author
-
Yu. M. Shernyakov, A. S. Payusov, P. S. Kop’ev, M. B. Lifshits, N. Yu. Gordeev, V. A. Shchukin, Innokenty I. Novikov, Mikhail V. Maximov, S. S. Mikhrin, L. Ya. Karachinsky, Dieter Bimberg, and Nikolai N. Ledentsov
- Subjects
Materials science ,business.industry ,Physics::Optics ,Condensed Matter Physics ,Laser ,Waveguide (optics) ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Semiconductor laser theory ,law.invention ,Wavelength ,Zero-dispersion wavelength ,Optics ,Quantum dot ,Quantum dot laser ,law ,Optoelectronics ,business ,Tunable laser - Abstract
Lasers that emit in the 1.3 μm wavelength range and include the active region based on InAs quantum dots were grown by the method of molecular-beam epitaxy and have been studied. The cavity includes a multilayer interference reflector, which brings about the fact that a large factor of optical confinement and low leakage losses are obtained only for the light propagating at some angle and, consequently, having a strictly definite wavelength. It is shown that, due to the use of such a waveguide structure, the temperature shift of the lasing wavelength is 0.2 nm/K, which is 2.5 times smaller than this shift in the lasers with quantum dots and with a conventional structure of the waveguide. The lasers with the stripe-contact width W = 10 μm exhibited the spatially single-mode emission, which verifies the advantages of the suggested nonconventional structure of the optical waveguide.
- Published
- 2009
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