606 results on '"Zhao, Hongping"'
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2. Sub-100 nm {\beta}-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
3. Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
4. 7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management
5. Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates
6. Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
7. In-situ MOCVD Growth and Band Offsets of Al$_2$O$_3$ Dielectric on $\beta$-Ga$_2$O$_3$ and $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ thin films
8. MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
9. Weighted gene coexpression network analysis and machine learning for the determination of tfh cell and B cell infiltrating biomarkers in thymoma-associated myasthenia gravis
10. Identification, evolution and expression analyses of the whole genome-wide PEBP gene family in Brassica napus L.
11. Young's Modulus and Corresponding Orientation in \beta-Ga2O3 Thin Films Resolved by Nanomechanical Resonators
12. Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic In$_2$O$_3$
13. Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN
14. Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
15. Experimental determination of the valence band offsets of $ZnGeN_2$ and $ZnGe_{0.94}Ga_{0.12}N_2$ with $GaN$
16. Broadband photodetectors with enhanced performance in UV–Vis–NIR band based on PbS quantum dots /ZnO film heterostructure
17. Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography
18. Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
19. Probing charge transport and background doping in MOCVD grown (010) ${\beta}$-Ga$_{2}$O$_{3}$
20. Clustering Bioactive Molecules in 3D Chemical Space with Unsupervised Deep Learning
21. Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters.
22. A TransSE-ResNet Deep Learning Model with Multi-Head Attention Mechanism for Covid-19 Chest CT Image Classification
23. Donors and Deep Acceptors in $\beta$-Ga2O3
24. Ultrawide Band Gap \beta-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion
25. \beta-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection
26. Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown.
27. Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate
28. MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films
29. MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates
30. Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2
31. Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content
32. Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface
33. Investigation on the oil sorption capability of silkworm cocoon waste
34. Low Pressure Chemical Vapor Deposition
35. Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures.
36. High Efficiency InGaN LEDs Emitting in Green, Amber and Beyond (Final Report)
37. High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes.
38. MOCVD Growth of β‑Ga2O3 on (001) Ga2O3 Substrates.
39. Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2.
40. Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters
41. Nickel/photoredox dual-catalyzed reductive cross-coupling of aryl halides and aldehydes
42. Copper Deficiency Myeloneuropathy in a Case of Wilson's Disease
43. Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits
44. Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8
45. Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates
46. Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3.
47. In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films.
48. Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface.
49. Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates.
50. Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy
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