1. One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by \SiO2-Based Solid Electrolyte With Controllable Operation Modes.
- Author
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Jia Sun, Jie Jiang, Aixia Lu, and Qing Wan
- Subjects
- *
ELECTRIC double layer , *FOURIER transform infrared spectroscopy , *FIELD-effect transistors , *ELECTRIC conductivity , *ELECTROCHEMISTRY - Abstract
Microporous SiO2 can provide large electric-doublelayer (EDL) capacitance and negligible leakage current, owing to lack of electron carrier and limited mobility of mobile ions. The impedance spectroscopy (ionic-conductivity--frequency and capacitance--voltage characteristics) and Fourier-transformed infrared spectroscopy of microporous SiO2 are characterized, which demonstrated that such dielectric is actually a solid-electrolyte dielectric. InGaZnO4 thin-film transistors (TFTs) on paper substrates gated by microporous-SiO2 solid electrolyte are fabricated at roomtemperature.The largeEDL-specific capacitance (1.36 µF/ cm²) results in the paper TFTs operate at a battery-drivable low voltage of 1.0 V. Both depletion-mode (Vth = .0.45 V) and enhancement-mode (Vth = 0.25 V) operations are realized by rationally controlling the oxygen concentration in argon ambient during InGaZnO4 channel deposition. Electrical characteristics with an equivalent field-effect mobility of ~21 cm²/V ⋅ s, a current ON/OFF ratio of greater than 105, and a subthreshold swing of ~80 mV/dec are demonstrated at low frequencies, which are promising for portable paper electronics. [ABSTRACT FROM AUTHOR]
- Published
- 2010
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