151. A Thermally Stable and High-Performance 90-nm Al2O3\backslashCu-Based 1T1R CBRAM Cell.
- Author
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Belmonte, Attilio, Kim, Woosik, Chan, Boon Teik, Heylen, Nancy, Fantini, Andrea, Houssa, Michel, Jurczak, Malgorzata, and Goux, Ludovic
- Subjects
THERMAL stability ,ALUMINUM oxide ,COMPLEMENTARY metal oxide semiconductors ,RANDOM access memory ,PERFORMANCE evaluation ,COPPER ,LOW voltage systems - Abstract
In this paper, we optimize the stack of a 90-nm CMOS-friendly W\backslashAl2O3\backslashCu conductive-bridging random access memory cell integrated in the one-transistor/one-resistor configuration. We show that the excellent Cu buffering properties of a TiW layer inserted at the Al2O3\backslashCu interface make it possible, on one hand, to ensure cell integrity after back-end-of-line processing at 400^\circC and, on the other, to obtain excellent memory performances. After optimization of the Al2O3 layer thickness, the cell exhibits highly controlled set and reset operations, a large memory window, fast pulse programming (10 ns) at low voltage (<3~V), and low-current (10 \muA), and multilevel operation. Finally, 10^6 cycles of write endurance lifetime with up to a three-decade memory window is demonstrated, and state stability is assessed up to 125^\circC. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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