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An integrated reconfigurable CMOS quasi-circulator operating at 2.4 GHz is presented. A passive structure delivers transmit power amplifier (PA) output signal to the differential low-noise amplifier (LNA) input as a common-mode signal and simultaneously delivers received signal as a differential-mode signal at the LNA input. The leakage of the PA output signal at the LNA input is reduced in two steps. First, the use of a reconfigurable impedance matching circuit, instead of a fixed 50- $\Omega $ resistance reduces the leakage by compensating the antenna impedance mismatch, and improves transmitter–receiver isolation. Second, a reconfigurable summing stage adds amplitude and phase adjusted PA output signal to LNA output to cancel the residual PA output leakage. Measurement results show that the receiver achieves a reduction of 90 dB for a single tone and more than 50 dB for a QPSK modulated 40-MHz bandwidth transmit signal. The receiver gain is more than 10 dB and the noise figure in the receiver path is 4.5 dB. The reconfigurable quasi-circulator along with the receiver LNA is designed and fabricated on a 130-nm CMOS technology. The cancellation circuitry occupies 0.27 mm2 and consumes 30-mW quiescent power, while the total active area of the chip is 1 mm2, and it consumes 65-mW power. [ABSTRACT FROM PUBLISHER]

A linear-switch mode hybrid envelope tracking (ET) supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 to 93.4 V/ \mu \texts and −87 to −152.5 V/ \mu \texts , respectively, dc gain from 45 to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power-added efficiency (PAE) of 42.3% at 26.2 dBm for a 10-MHz 7.24-dB peak-to-average power ratio (PAPR) long-term evolution (LTE) signal and improves PAE by 8% at 6 dB back off from 26.2-dBm power amplifier (PA) output power with respect to fixed supply. With a 10-MHz 7.24-dB PAPR quadrature-phase shift keying LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of −37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2-dBm PA output power, while with a 10-MHz 8.15-dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of −35.6 dBc and EVM of 6% at 26-dBm PA output power without digital predistortion. The proposed supply modulator core circuit occupies 1.1-mm2 die area, and is fabricated in a 0.18- \mu \textm CMOS technology. [ABSTRACT FROM AUTHOR]

A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal–semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation. [ABSTRACT FROM AUTHOR]

A low-power transceiver for medical implant communication service is presented. The device consists of three subsystems, which perform wake-up signal reception, data-link binary frequency-shift keying (BFSK) reception, and transmission, respectively. A common antenna interface is reused in the three subsystems, reducing circuit complexity and number of external components. Super-regenerative architecture is used for wake-up reception, and gm-boosted common-gate stages are used to optimize receiver (RX) performance with low power consumption. The transmitter employs an all-digital frequency-locked loop to directly drive a class AB power amplifier. The transmitter can alternatively use an injection-locked power oscillator for lower bit rates and power consumption. The integrated circuit is designed and fabricated on a 0.18-\mu\m CMOS process. The wake-up RX achieves a -80-dBm sensitivity for a 50-kb/s signal and a 280-\mu\W dissipation. The BFSK RX achieves a -97-dBm sensitivity for a 75-kb/s signal and a 2-mW power consumption. Finally, the transmitter achieves an output power of -5 dBm for a power consumption of 2.9 mW. [ABSTRACT FROM AUTHOR]

Several wireless biomedical transceivers, including medical implants communication systems (MICSs), require ultra-low-power low-complexity frequency synthesizers. This paper presents an all-digital frequency-locked loop (ADFLL)-based frequency synthesizer with a built-in frequency-shift keying modulator for MICS and industrial–scientific–medical band applications. Unlike all-digital phase-locked loops that rely on a power-hungry time to digital converter, the proposed ADFLL employs a high-resolution single-bit \Sigma \Delta frequency discriminator in the feedback path and a noise-cancelling \Sigma \Delta phase-accumulator-based frequency controller in the reference path, achieving fractional resolution with low power consumption. The loop compensation is implemented digitally using an infinite impulse response filter followed by a digital-intensive current-steering DAC driving a ring-oscillator-based voltage-controlled oscillator. The ADFLL achieves 9.5-Hz frequency resolution, spanning the ISM 400–410-MHz band. A worst case near-integer spur of -\62 dBc and a phase noise of -\83 dBc/Hz at 300-kHz offset are measured. The ADFLL is fabricated on a \0.18-\mu\ m CMOS process, occupying a \ 0.14-mm^2 die area, with a quiescent current consumption of \700~\mu\ A. [ABSTRACT FROM AUTHOR]

A noise-shaped direct digital IF to RF (DIF2RF) DAC with embedded upconverter mixer is presented. The digital IF signal is noise shaped by a bandpass Σ-Δ modulator with 1-bit IF output followed by a semidigital finite impulse response (FIR) filter. The current mode FIR filter combines scaled values of the local oscillator (LO) signal for performing reconstruction filtering and upconversion in a single module. The DIF2RF design modulates the digital IF signal with a digital LO signal. This topology eliminates the transconductance nonlinearity of conventional mixers and is inherently linear due to single-bit digital IF input. The presented architecture reduces clock jitter sensitivity of 1-bit DACs by masking IF clock transitions with LO signals. A prototype of the DIF2RF DAC is designed and fabricated in a five-layer metal 0.25-μm digital CMOS process. The architecture can be used in low-power software-defined digital-IF transmitters. The DIF2RF DAC consumes 49 mA from a 2.5-V supply, achieving -64.7-dBc third-order intermodulation at 1.03 GHz with a spurious-free dynamic range of 72 dB in a 15-MHz bandwidth. [ABSTRACT FROM AUTHOR]

Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880–915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that AM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively. [ABSTRACT FROM AUTHOR]

Wideband low-noise ΣΔ fractional-N synthesizers pose several design challenges due to the nonlinear time-varying nature of synthesizer building blocks such as phase frequency detectors (PFDs), charge pump, and frequency dividers. Loop nonlinearities can increase close-in phase noise and enhance spurious tones due to intermodulation of high-frequency quantization noise and tonal content; therefore, an accurate simulation model is critical for successful implementation of loop parameters and bandwidth widening techniques. In this paper a closed-loop non-linear simulation model for fractional-N synthesizers is presented. Inherent nonuniform sampling of the PFD is modeled through an event-driven dual-iteration-based technique. The proposed technique generates a vector of piecewise linear time-voltage pairs, defining the voltage-controlled oscillator (VCO) control voltage. This method also lends itself to modeling of cyclostationary thermal and flicker noise generated by time-varying charge-pump current pulses. A flexible third-order ΣΔ modulated RF synthesizer core with integrated loop filter and LC-tank VCO is designed and fabricated in 0.13-μm CMOS process in order to validate the technique experimentally. The proposed modeling technique was able to predict in-band spur power levels with 1.8-dB accuracy, and spur frequency offsets with lower than 400-Hz accuracy with several programmable nonidealities enabled. [ABSTRACT FROM AUTHOR]