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Your search keyword '"Andrews D"' showing total 8 results
Start Over Author "Andrews D" Journal journal of applied physics
8 results on '"Andrews D"'

1. The influence of growth conditions on sulfur and selenium incorporation in Ga1-xAlxAs grown by molecular-beam epitaxy.

Author

Andrews, D. A., Heckingbottom, R., and Davies, G. J.

Subjects
*ELECTRIC batteries, *SEMICONDUCTOR doping, *MOLECULAR beam epitaxy
Abstract

Deals with a study which demonstrated the use of an electrochemical cell as a source of chalcogem dimers for n-type doping of Ga[sub1-x]Al[subx]As films grown by molecular-beam epitaxy. Experimental details; Results; Discussion.

Published
1986
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3. Sulfur doping behavior of gallium antimonide grown by molecular-beam epitaxy.

Author

Poole, I., Lee, M. E., Singer, K. E., Frost, J. E. F., Kerr, T. M., Wood, C. E. C., Andrews, D. A., Rothwell, W. J. M., and Davies, G. J.

Subjects
SEMICONDUCTOR doping, GALLIUM compounds, MOLECULAR beam epitaxy
Abstract

Investigates the sulphur doping behavior of gallium antimonide (GaSb) grown by molecular-beam epitaxy. Challenges in doping of MBE-grown GaSb; Methodology of the study; Discussion on the result of the study.

Published
1988
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7. The influence of growth conditions on the growth rate and composition of GaAs and GaInAs alloys grown by chemical beam epitaxy.

Author

Andrews, D. A. and Davies, G. J.

Subjects
*GALLIUM arsenide, *ALLOYS, *EPITAXY
Abstract

Investigates the effect of source species, substrate temperature, substrate orientation, and group-V overpressure on the growth rate and composition of gallium arsenide (GaAs) and indium gallium arsenic (InGaAs) alloys grown by chemical beam epitaxy. GaAs growth rate against substrate temperature; GaAs partial growth rate in GaInAs alloys; GaAs partial growth rate.

Published
1990
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