150 results on '"Bender, Hugo"'
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2. Evidences of areal switching in Vacancy-Modulated Conductive Oxide (VMCO) memory
3. Voltage-controlled reverse filament growth boosts resistive switching memory
4. Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
5. Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations
6. Correlation between number of walls and diameter in multiwall carbon nanotubes grown by chemical vapor deposition
7. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures
8. Improved EOT and leakage current for metal–insulator–metal capacitor stacks with rutile TiO 2
9. Dielectric reliability of 70 nm pitch air-gap interconnect structures
10. Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films
11. Germanium content dependence of the leakage current of recessed SiGe source/drain junctions
12. Unravelling stacking order in epitaxial bilayer MX₂ using 4D-STEM with unsupervised learning
13. Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice
14. Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001).
15. Comparison of the Electromigration Behavior of Al(MgCu) with Al(Cu) and Al(SiCu)
16. Structural and electrical characterization of carbon nanotube interconnects by combined transmission electron microscopy and scanning spreading resistance microscopy
17. ALD of Al2O3 for Carbon Nanotube vertical interconnect and its impact on the electrical properties
18. Evaluation of the electrical contact area in contact-mode scanning probe microscopy.
19. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors.
20. Cu Plating of Through-Si Vias for 3D-Stacked Integrated Circuits
21. Nanoprober-Based Pick-and-Place Process for Site-Specific Characterization of Individual Carbon Nanotubes
22. Strain measurements in s-Si/SiGe nanostructures by quantitative high-resolution electron microscopy
23. Effect of Top Dielectric Morphology and Gate Material on the Performance of Nitride-based FLASH Memory Cells
24. Modeling and Experiments of Boron Diffusion During Sub-Millisecond Non-Melt Laser Annealing in Silicon
25. Ge Island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor
26. Unravelling stacking order in epitaxial bilayer MX2 using 4D-STEM with unsupervised learning.
27. Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis.
28. High Absorption Contrast Quantum Confined Stark Effect in Ultra-Thin Ge/SiGe Quantum Well Stacks Grown on Si.
29. Intragrain defects in polycrystalline silicon layers grown by aluminum-induced crystallization and epitaxy for thin-film solar cells.
30. Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy.
31. Al speed fill
32. Intragrain defects in polycrystalline silicon layers grown by aluminum-induced crystallization and epitaxy for thin-film solar cells
33. In situ UHVEM study of {113}-defect formation in Si nanowires
34. Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism.
35. New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared Applications
36. Electrical properties of extended defects in strain relaxed GeSn.
37. The flexoelectric effect in Al-doped hafnium oxide.
38. Sub-100 nm2 Cobalt Interconnects.
39. Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates.
40. MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics.
41. Advanced Raman Spectroscopy Using Nanofocusing of Light.
42. Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties.
43. Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S.
44. Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching.
45. Application of focused ion beam for failure analysis: Uporaba curka fokusiranih ionov pri analizi odpovedi
46. Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory.
47. The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy.
48. Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements.
49. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs.
50. ALD of Al2O3 for Carbon Nanotube vertical interconnect and its impact on the electrical properties.
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