46 results on '"Syu, Yong-En"'
Search Results
2. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
3. N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors
4. Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices
5. Physical and chemical mechanisms in oxide-based resistance random access memory
6. Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure
7. Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]
8. Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors
9. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
10. High performance of graphene oxide-doped silicon oxide-based resistance random access memory
11. Temperature-dependent memory characteristics of silicon–oxide–nitride–oxide–silicon thin-film-transistors
12. Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory.
13. Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory.
14. RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
15. Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment.
16. Hopping conduction properties of the Sn:SiO thin-film resistance random access memory devices induced by rapid temperature annealing procedure.
17. Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors.
18. Performance and characteristics of double layer porous silicon oxide resistance random access memory.
19. Atomic-level quantized reaction of HfOx memristor.
20. Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment.
21. Silicon introduced effect on resistive switching characteristics of WOX thin films.
22. Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment.
23. Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory.
24. Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory.
25. Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory.
26. Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory.
27. Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory.
28. Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process.
29. Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiO\bf x Resistance Switching Device.
30. The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory.
31. Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment.
32. Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices.
33. Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices.
34. Charge Quantity Influence on Resistance Switching Characteristic During Forming Process.
35. Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory.
36. Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical \CO2 Fluid Treatment.
37. Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications.
38. Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress.
39. Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors.
40. Asymmetric Carrier Conduction Mechanism by Tip Electric Field in \WSiOX Resistance Switching Device.
41. On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure.
42. Redox Reaction Switching Mechanism in RRAM Device With \Pt/CoSiOX\/\TiN Structure.
43. Characteristics of hafnium oxide resistance random access memory with different setting compliance current.
44. Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices.
45. Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment.
46. N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.